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1. 发明申请

US20110165347A1 DIELECTRIC FILM FORMATION USING INERT GAS EXCITATION 失效
标题翻译：使用入侵气体激励的电介质膜形成
公开(公告)号：US20110165347A1
公开(公告)日：2011-07-07
申请号：US12874886
申请日：2010-09-02
申请人： Matthew L. Miller , Jang-Gyoo Yang
发明人： Matthew L. Miller , Jang-Gyoo Yang
IPC分类号： H05H1/24
CPC分类号： H01L21/02222 , C23C16/045 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01J37/32449 , H01J2237/3327 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02326
摘要： Methods of forming a silicon-and-nitrogen-containing layers and silicon oxide layers are described. The methods include the steps of mixing a carbon-free silicon-containing precursor with plasma effluents, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layers may be made flowable or conformal by selection of the flow rate of excited effluents from a remote plasma region into the substrate processing region. The plasma effluents are formed in a plasma by flowing inert gas(es) into the plasma. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film.
摘要翻译：描述形成含硅和氮的层和氧化硅层的方法。所述方法包括将无碳含硅前体与等离子体流出物混合，以及在衬底上沉积含硅和氮的层的步骤。可以通过选择从远程等离子体区域到基板处理区域的激发流出物的流量来使含硅和氮的层可流动或共形。等离子体流出物通过将惰性气体流入等离子体而形成在等离子体中。通过固化和退火膜可以将含硅和氮的层转化为含硅和氧的层。

2. 发明授权

US10283321B2 Semiconductor processing system and methods using capacitively coupled plasma 有权
公开(公告)号：US10283321B2
公开(公告)日：2019-05-07
申请号：US13251714
申请日：2011-10-03
申请人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
发明人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
IPC分类号： H01J37/32
摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

3. 发明申请

US20120180954A1 SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA 审中-公开
标题翻译：半导体处理系统和使用电容耦合等离子体的方法
公开(公告)号：US20120180954A1
公开(公告)日：2012-07-19
申请号：US13251663
申请日：2011-10-03
申请人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
发明人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
IPC分类号： C23F1/02 , C23C16/458 , C23C16/455 , C23C16/50
CPC分类号： H05H1/24 , C23C16/45565 , C23C16/45585 , H01J37/32091 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32449 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32724 , H01L21/02274
摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
摘要翻译：描述了具有位于处理室内的电容耦合等离子体（CCP）单元的衬底处理系统。 CCP单元可以包括形成在第一电极和第二电极之间的等离子体激发区域。第一电极可以包括允许第一气体进入等离子体激发区域的第一多个开口，并且第二电极可以包括允许活化气体离开等离子体激发区域的第二多个开口。该系统还可以包括用于将第一气体供应到CCP单元的第一电极的气体入口和可操作以支撑衬底的基座。基座位于气体反应区域的下方，活性气体从CCP单元行进。

4. 发明申请

US20130082197A1 SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA 审中-公开
公开(公告)号：US20130082197A1
公开(公告)日：2013-04-04
申请号：US13251714
申请日：2011-10-03
申请人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
发明人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
IPC分类号： G21K1/00
CPC分类号： H01J37/32091 , H01J37/32422
摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

5. 发明授权

US08329262B2 Dielectric film formation using inert gas excitation 失效
标题翻译：使用惰性气体激发的介质膜形成
公开(公告)号：US08329262B2
公开(公告)日：2012-12-11
申请号：US12874886
申请日：2010-09-02
申请人： Matthew L. Miller , Jang-Gyoo Yang
发明人： Matthew L. Miller , Jang-Gyoo Yang
IPC分类号： H05H1/24
CPC分类号： H01L21/02222 , C23C16/045 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01J37/32449 , H01J2237/3327 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02326
摘要： Methods of forming a silicon-and-nitrogen-containing layers and silicon oxide layers are described. The methods include the steps of mixing a carbon-free silicon-containing precursor with plasma effluents, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layers may be made flowable or conformal by selection of the flow rate of excited effluents from a remote plasma region into the substrate processing region. The plasma effluents are formed in a plasma by flowing inert gas(es) into the plasma. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film.
摘要翻译：描述形成含硅和氮的层和氧化硅层的方法。所述方法包括将无碳含硅前体与等离子体流出物混合，以及在衬底上沉积含硅和氮的层的步骤。可以通过选择从远程等离子体区域到基板处理区域的激发流出物的流量来使含硅和氮的层可流动或共形。等离子体流出物通过将惰性气体流入等离子体而形成在等离子体中。通过固化和退火膜可以将含硅和氮的层转化为含硅和氧的层。

6. 发明授权

US08894767B2 Flow control features of CVD chambers 有权
标题翻译： CVD室的流量控制特征
公开(公告)号：US08894767B2
公开(公告)日：2014-11-25
申请号：US12836726
申请日：2010-07-15
申请人： Kien N. Chuc , Qiwei Liang , Hanh D. Nguyen , Xinglong Chen , Matthew Miller , Soonam Park , Toan Q. Tran , Adib Khan , Jang-Gyoo Yang , Dmitry Lubomirsky , Shankar Venkataraman
发明人： Kien N. Chuc , Qiwei Liang , Hanh D. Nguyen , Xinglong Chen , Matthew Miller , Soonam Park , Toan Q. Tran , Adib Khan , Jang-Gyoo Yang , Dmitry Lubomirsky , Shankar Venkataraman
IPC分类号： C23C16/00 , C23F1/00 , C23C16/455 , H01J37/32 , C23C16/452
CPC分类号： C23C16/45565 , C23C16/452 , C23C16/45574 , H01J37/3244 , H01J37/32449 , Y10T137/85938
摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.
摘要翻译：提供了用于气体分配组件的装置和方法。一方面，提供了一种气体分配组件，包括环形体，该环形体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部，以及形成位于所述内部环形壁中的位于所述上部凹部中的上板，包括具有穿过其形成的多个第一孔的盘状体和位于所述座上的底板，所述底板包括具有多个第二孔的盘状体通过其形成的孔与第一孔对准，以及形成在第二孔之间并穿过底板的多个第三孔，底板密封地联接到上板，以将多个第一和第二孔与多个第三孔。

7. 发明授权

US08742665B2 Plasma source design 有权
公开(公告)号：US08742665B2
公开(公告)日：2014-06-03
申请号：US12905940
申请日：2010-10-15
申请人： Dmitry Lubomirsky , Jang-Gyoo Yang , Matthew Miller , Jay Pinson , Kien Chuc
发明人： Dmitry Lubomirsky , Jang-Gyoo Yang , Matthew Miller , Jay Pinson , Kien Chuc
IPC分类号： H05B31/26
CPC分类号： H01J37/3211 , H01J37/32357
摘要： Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.

8. 发明申请

US20110115378A1 PLASMA SOURCE DESIGN 有权
标题翻译：等离子体源设计
公开(公告)号：US20110115378A1
公开(公告)日：2011-05-19
申请号：US12905940
申请日：2010-10-15
申请人： Dmitry Lubomirsky , Jang-Gyoo Yang , Matthew Miller , Jay Pinson , Kien Chuc
发明人： Dmitry Lubomirsky , Jang-Gyoo Yang , Matthew Miller , Jay Pinson , Kien Chuc
IPC分类号： H05B31/26
CPC分类号： H01J37/3211 , H01J37/32357
摘要： Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.
摘要翻译：本发明的实施例通常提供一种等离子体源装置及其使用方法，其能够通过使用电磁能量在等离子体产生区域内产生自由基和/或气体离子，所述等离子体产生区域围绕磁芯元件对称地定位资源。通常，等离子体产生区域和磁芯的取向和形状允许将输送的电磁能量有效均匀地耦合到设置在等离子体产生区域中的气体。通常，等离子体产生区域中形成的等离子体的改进的特性能够改善在设置在等离子体产生区域下游的衬底或处理室的一部分上进行的沉积，蚀刻和/或清洁过程。

9. 发明授权

US07989365B2 Remote plasma source seasoning 有权
标题翻译：远程等离子源调味料
公开(公告)号：US07989365B2
公开(公告)日：2011-08-02
申请号：US12543245
申请日：2009-08-18
申请人： Soonam Park , Soo Jeon , Toan Q. Tran , Jang-Gyoo Yang , Qiwei Liang , Dmitry Lubomirsky
发明人： Soonam Park , Soo Jeon , Toan Q. Tran , Jang-Gyoo Yang , Qiwei Liang , Dmitry Lubomirsky
IPC分类号： H01L21/316
CPC分类号： C23C16/4404 , C23C16/401 , C23C16/4405 , H01J37/32357 , H01J37/32862 , Y10S438/905
摘要： Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce reactions with the seasoned walls during deposition processes, resulting in improved deposition rate, improved deposition uniformity and reduced defectivity during subsequent deposition.
摘要翻译：描述了调制远程等离子体系统的方法。这些方法包括将含硅前体流入远程等离子体区域以将含硅膜沉积在远程等离子体系统的内表面上的步骤。该方法在沉积过程中减少了与经调节的壁的反应，从而提高了沉积速率，改善了沉积均匀性，并降低了后续沉积时的缺陷率。

10. 发明申请

US20110045676A1 REMOTE PLASMA SOURCE SEASONING 有权
标题翻译：远程等离子体源头季节
公开(公告)号：US20110045676A1
公开(公告)日：2011-02-24
申请号：US12543245
申请日：2009-08-18
申请人： Soonam Park , Soo Jeon , Toan Q. Tran , Jang-Gyoo Yang , Qiwei Liang , Dmitry Lubomirsky
发明人： Soonam Park , Soo Jeon , Toan Q. Tran , Jang-Gyoo Yang , Qiwei Liang , Dmitry Lubomirsky
IPC分类号： H01L21/314
CPC分类号： C23C16/4404 , C23C16/401 , C23C16/4405 , H01J37/32357 , H01J37/32862 , Y10S438/905
摘要： Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce reactions with the seasoned walls during deposition processes, resulting in improved deposition rate, improved deposition uniformity and reduced defectivity during subsequent deposition.
摘要翻译：描述了调制远程等离子体系统的方法。这些方法包括将含硅前体流入远程等离子体区域以将含硅膜沉积在远程等离子体系统的内表面上的步骤。该方法在沉积过程中减少了与经调节的壁的反应，从而提高了沉积速率，改善了沉积均匀性，并降低了后续沉积时的缺陷率。

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