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    • 8. 发明授权
    • Flowable dielectric equipment and processes
    • 可流动介质设备和工艺
    • US08357435B2
    • 2013-01-22
    • US12210982
    • 2008-09-15
    • Dmitry LubomirskyQiwei LiangJang Gyoo Yang
    • Dmitry LubomirskyQiwei LiangJang Gyoo Yang
    • H05H1/24C23C16/00
    • B08B7/00C23C16/4405C23C16/452C23C16/45514C23C16/509H01J37/32449
    • Methods of depositing and curing a dielectric material on a substrate are described. The methods may include the steps of providing a processing chamber partitioned into a first plasma region and a second plasma region, and delivering the substrate to the processing chamber, where the substrate occupies a portion of the second plasma region. The methods may further include forming a first plasma in the first plasma region, where the first plasma does not directly contact with the substrate, and depositing the dielectric material on the substrate to form a dielectric layer. One or more reactants excited by the first plasma are used in the deposition of the dielectric material. The methods may additional include curing the dielectric layer by forming a second plasma in the second plasma region, where one or more carbon-containing species is removed from the dielectric layer.
    • 描述了在衬底上沉积和固化电介质材料的方法。 该方法可以包括以下步骤:提供分隔成第一等离子体区域和第二等离子体区域的处理室,以及将衬底输送到处理室,其中衬底占据第二等离子体区域的一部分。 所述方法可以进一步包括在第一等离子体区域中形成第一等离子体,其中第一等离子体不直接与衬底接触,并将电介质材料沉积在衬底上以形成电介质层。 在电介质材料的沉积中使用由第一等离子体激发的一种或多种反应物。 所述方法可以包括通过在第二等离子体区域中形成第二等离子体来固化介电层,其中从电介质层去除一个或多个含碳物质。