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    • 1. 发明授权
    • Plasma source design
    • 等离子源设计
    • US08771538B2
    • 2014-07-08
    • US12949661
    • 2010-11-18
    • Dmitry LubomirskyJang-Gyoo YangMatthew MillerJay PinsonKien Chuc
    • Dmitry LubomirskyJang-Gyoo YangMatthew MillerJay PinsonKien Chuc
    • B44C1/22H01J37/32
    • H01J37/32357H01J37/3211
    • Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.
    • 本发明的实施例通常提供一种等离子体源装置及其使用方法,其能够通过使用电磁能量在等离子体产生区域内产生自由基和/或气体离子,所述等离子体产生区域围绕磁芯元件对称地定位 资源。 通常,等离子体产生区域和磁芯的取向和形状允许将输送的电磁能量有效均匀地耦合到设置在等离子体产生区域中的气体。 通常,等离子体产生区域中形成的等离子体的改进的特性能够改善在设置在等离子体产生区域下游的衬底或处理室的一部分上进行的沉积,蚀刻和/或清洁过程。
    • 5. 发明申请
    • PLASMA SOURCE DESIGN
    • 等离子体源设计
    • US20110115378A1
    • 2011-05-19
    • US12905940
    • 2010-10-15
    • Dmitry LubomirskyJang-Gyoo YangMatthew MillerJay PinsonKien Chuc
    • Dmitry LubomirskyJang-Gyoo YangMatthew MillerJay PinsonKien Chuc
    • H05B31/26
    • H01J37/3211H01J37/32357
    • Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.
    • 本发明的实施例通常提供一种等离子体源装置及其使用方法,其能够通过使用电磁能量在等离子体产生区域内产生自由基和/或气体离子,所述等离子体产生区域围绕磁芯元件对称地定位 资源。 通常,等离子体产生区域和磁芯的取向和形状允许将输送的电磁能量有效均匀地耦合到设置在等离子体产生区域中的气体。 通常,等离子体产生区域中形成的等离子体的改进的特性能够改善在设置在等离子体产生区域下游的衬底或处理室的一部分上进行的沉积,蚀刻和/或清洁过程。
    • 7. 发明申请
    • PROCESS CHAMBER FOR DIELECTRIC GAPFILL
    • 电介质加工室
    • US20070289534A1
    • 2007-12-20
    • US11754858
    • 2007-05-29
    • Dmitry LubomirskyQiwei LiangSoonam ParkKien ChucEllie Yieh
    • Dmitry LubomirskyQiwei LiangSoonam ParkKien ChucEllie Yieh
    • C23C16/452
    • C23C16/46C23C16/452C23C16/45565C23C16/45574H01L21/67115
    • A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a radiative heating system to heat the substrate that includes at least one light source, where at least some of the light emitted from the light source travels through the top side of the deposition chamber before reaching the substrate. The system may also include a precursor distribution system to introduce the reactive radical precursor and additional dielectric precursors to the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
    • 描述了从电介质前体的等离子体在衬底上形成电介质层的系统。 该系统可以包括沉积室,用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统,其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体 。 该系统还可以包括辐射加热系统以加热包括至少一个光源的基板,其中从光源发射的至少一些光在到达基板之前穿过沉积室的顶侧。 该系统还可以包括将反应性基团前体和另外的电介质前体引入沉积室的前体分配系统。 还可以包括原位等离子体产生系统,以从沉积室中提供的电介质前体在沉积室中产生等离子体。
    • 8. 发明申请
    • PROCESS CHAMBER FOR DIELECTRIC GAPFILL
    • 电介质加工室
    • US20070277734A1
    • 2007-12-06
    • US11754916
    • 2007-05-29
    • Dmitry LubomirskyQiwei LiangSoonam ParkKien ChucEllie Yieh
    • Dmitry LubomirskyQiwei LiangSoonam ParkKien ChucEllie Yieh
    • C23C16/00
    • C23C16/45565C23C16/402C23C16/45574C23C16/505
    • A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system comprising a dual-channel showerhead positioned above the substrate stage. The showerhead may have a faceplate with a first set of openings through which the reactive radical precursor enters the deposition chamber, and a second set of openings through which a second dielectric precursor enters the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
    • 描述了从电介质前体的等离子体在衬底上形成电介质层的系统。 该系统可以包括沉积室,用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统,其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体 。 该系统还可以包括前体分配系统,其包括位于衬底台上方的双通道喷头。 喷头可以具有面板,其具有第一组开口,反应性自由基前体通过该开口进入沉积室,以及第二组开口,第二介电体前体通过该开口进入沉积室。 还可以包括原位等离子体产生系统,以从沉积室中提供的电介质前体在沉积室中产生等离子体。