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1. 发明申请

US20110011338A1 FLOW CONTROL FEATURES OF CVD CHAMBERS 有权
标题翻译： CVD气泡流量控制特征
公开(公告)号：US20110011338A1
公开(公告)日：2011-01-20
申请号：US12836726
申请日：2010-07-15
申请人： Kien N. Chuc , Qiwei Liang , Hanh D. Nguyen , Xinglong Chen , Matthew Miller , Soonam Park , Toan Q. Tran , Adib Khan , Jang-Gyoo Yang , Dmitry Lubomirsky , Shankar Venkataraman
发明人： Kien N. Chuc , Qiwei Liang , Hanh D. Nguyen , Xinglong Chen , Matthew Miller , Soonam Park , Toan Q. Tran , Adib Khan , Jang-Gyoo Yang , Dmitry Lubomirsky , Shankar Venkataraman
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/452 , C23C16/45574 , H01J37/3244 , H01J37/32449 , Y10T137/85938
摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.
摘要翻译：提供了用于气体分配组件的装置和方法。一方面，提供了一种气体分配组件，包括环形体，该环形体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部，以及形成位于所述内部环形壁中的位于所述上部凹部中的上板，包括具有穿过其形成的多个第一孔的盘状体和位于所述座上的底板，所述底板包括具有多个第二孔的盘状体通过其形成的孔与第一孔对准，以及形成在第二孔之间并穿过底板的多个第三孔，底板密封地联接到上板，以将多个第一和第二孔与多个第三孔。

2. 发明授权

US08894767B2 Flow control features of CVD chambers 有权
标题翻译： CVD室的流量控制特征
公开(公告)号：US08894767B2
公开(公告)日：2014-11-25
申请号：US12836726
申请日：2010-07-15
申请人： Kien N. Chuc , Qiwei Liang , Hanh D. Nguyen , Xinglong Chen , Matthew Miller , Soonam Park , Toan Q. Tran , Adib Khan , Jang-Gyoo Yang , Dmitry Lubomirsky , Shankar Venkataraman
发明人： Kien N. Chuc , Qiwei Liang , Hanh D. Nguyen , Xinglong Chen , Matthew Miller , Soonam Park , Toan Q. Tran , Adib Khan , Jang-Gyoo Yang , Dmitry Lubomirsky , Shankar Venkataraman
IPC分类号： C23C16/00 , C23F1/00 , C23C16/455 , H01J37/32 , C23C16/452
CPC分类号： C23C16/45565 , C23C16/452 , C23C16/45574 , H01J37/3244 , H01J37/32449 , Y10T137/85938
摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.
摘要翻译：提供了用于气体分配组件的装置和方法。一方面，提供了一种气体分配组件，包括环形体，该环形体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部，以及形成位于所述内部环形壁中的位于所述上部凹部中的上板，包括具有穿过其形成的多个第一孔的盘状体和位于所述座上的底板，所述底板包括具有多个第二孔的盘状体通过其形成的孔与第一孔对准，以及形成在第二孔之间并穿过底板的多个第三孔，底板密封地联接到上板，以将多个第一和第二孔与多个第三孔。

3. 发明申请

US20130082197A1 SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA 审中-公开
公开(公告)号：US20130082197A1
公开(公告)日：2013-04-04
申请号：US13251714
申请日：2011-10-03
申请人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
发明人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
IPC分类号： G21K1/00
CPC分类号： H01J37/32091 , H01J37/32422
摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

4. 发明授权

US10283321B2 Semiconductor processing system and methods using capacitively coupled plasma 有权
公开(公告)号：US10283321B2
公开(公告)日：2019-05-07
申请号：US13251714
申请日：2011-10-03
申请人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
发明人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
IPC分类号： H01J37/32
摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

5. 发明申请

US20120180954A1 SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA 审中-公开
标题翻译：半导体处理系统和使用电容耦合等离子体的方法
公开(公告)号：US20120180954A1
公开(公告)日：2012-07-19
申请号：US13251663
申请日：2011-10-03
申请人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
发明人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
IPC分类号： C23F1/02 , C23C16/458 , C23C16/455 , C23C16/50
CPC分类号： H05H1/24 , C23C16/45565 , C23C16/45585 , H01J37/32091 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32449 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32724 , H01L21/02274
摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
摘要翻译：描述了具有位于处理室内的电容耦合等离子体（CCP）单元的衬底处理系统。 CCP单元可以包括形成在第一电极和第二电极之间的等离子体激发区域。第一电极可以包括允许第一气体进入等离子体激发区域的第一多个开口，并且第二电极可以包括允许活化气体离开等离子体激发区域的第二多个开口。该系统还可以包括用于将第一气体供应到CCP单元的第一电极的气体入口和可操作以支撑衬底的基座。基座位于气体反应区域的下方，活性气体从CCP单元行进。

6. 发明授权

US07989365B2 Remote plasma source seasoning 有权
标题翻译：远程等离子源调味料
公开(公告)号：US07989365B2
公开(公告)日：2011-08-02
申请号：US12543245
申请日：2009-08-18
申请人： Soonam Park , Soo Jeon , Toan Q. Tran , Jang-Gyoo Yang , Qiwei Liang , Dmitry Lubomirsky
发明人： Soonam Park , Soo Jeon , Toan Q. Tran , Jang-Gyoo Yang , Qiwei Liang , Dmitry Lubomirsky
IPC分类号： H01L21/316
CPC分类号： C23C16/4404 , C23C16/401 , C23C16/4405 , H01J37/32357 , H01J37/32862 , Y10S438/905
摘要： Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce reactions with the seasoned walls during deposition processes, resulting in improved deposition rate, improved deposition uniformity and reduced defectivity during subsequent deposition.
摘要翻译：描述了调制远程等离子体系统的方法。这些方法包括将含硅前体流入远程等离子体区域以将含硅膜沉积在远程等离子体系统的内表面上的步骤。该方法在沉积过程中减少了与经调节的壁的反应，从而提高了沉积速率，改善了沉积均匀性，并降低了后续沉积时的缺陷率。

7. 发明申请

US20110045676A1 REMOTE PLASMA SOURCE SEASONING 有权
标题翻译：远程等离子体源头季节
公开(公告)号：US20110045676A1
公开(公告)日：2011-02-24
申请号：US12543245
申请日：2009-08-18
申请人： Soonam Park , Soo Jeon , Toan Q. Tran , Jang-Gyoo Yang , Qiwei Liang , Dmitry Lubomirsky
发明人： Soonam Park , Soo Jeon , Toan Q. Tran , Jang-Gyoo Yang , Qiwei Liang , Dmitry Lubomirsky
IPC分类号： H01L21/314
CPC分类号： C23C16/4404 , C23C16/401 , C23C16/4405 , H01J37/32357 , H01J37/32862 , Y10S438/905
摘要： Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce reactions with the seasoned walls during deposition processes, resulting in improved deposition rate, improved deposition uniformity and reduced defectivity during subsequent deposition.
摘要翻译：描述了调制远程等离子体系统的方法。这些方法包括将含硅前体流入远程等离子体区域以将含硅膜沉积在远程等离子体系统的内表面上的步骤。该方法在沉积过程中减少了与经调节的壁的反应，从而提高了沉积速率，改善了沉积均匀性，并降低了后续沉积时的缺陷率。

8. 发明申请

US20120073501A1 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：US20120073501A1
公开(公告)日：2012-03-29
申请号：US13248567
申请日：2011-09-29
申请人： Dmitry Lubomirsky , Qiwei Liang , Soonam Park , Kien N. Chuc , Ellie Yieh
发明人： Dmitry Lubomirsky , Qiwei Liang , Soonam Park , Kien N. Chuc , Ellie Yieh
IPC分类号： C23C16/50 , C23C16/455
CPC分类号： C23C16/45502 , C23C16/401 , C23C16/402 , C23C16/452 , C23C16/45514 , C23C16/45565 , C23C16/45574 , C23C16/45576 , C23C16/45578 , C23C16/4584 , C23C16/4586 , C23C16/505 , C23C16/509 , C23C16/52 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32724 , H01J37/32752 , H01J2237/2001 , H01J2237/3321 , H01L21/02164 , H01L21/02274 , H01L21/76224
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统可以包括前体分配系统，其包括至少一个顶部入口和多个侧入口。顶部入口可以位于衬底台的上方，并且侧入口可以在衬底台周围径向分布。反应性自由基前体可以通过顶部入口提供给沉积室。还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

9. 发明申请

US20100098882A1 PLASMA SOURCE FOR CHAMBER CLEANING AND PROCESS 审中-公开
标题翻译：用于室清洁和过程的等离子体源
公开(公告)号：US20100098882A1
公开(公告)日：2010-04-22
申请号：US12581600
申请日：2009-10-19
申请人： Dmitry Lubomirsky , Jang Gyoo Yang , Qiwei Liang , Matthew L. Miller , James Santosa , Xinglong Chen , Paul F. Smith
发明人： Dmitry Lubomirsky , Jang Gyoo Yang , Qiwei Liang , Matthew L. Miller , James Santosa , Xinglong Chen , Paul F. Smith
IPC分类号： C23C16/50 , C23C16/00
CPC分类号： C23C16/4405 , H01J37/32036 , H01J37/32045 , H01J37/32082 , H01J37/32183 , H01J37/32357
摘要： Apparatus and methods for processing a substrate and processing a process chamber are provided. In one embodiment, an apparatus is provided for processing a substrate including a power source, a switch box coupled to the power source and the switch box having a switch interchangeable between a first position and a second position, a first match box coupled to the switch box, a plasma generator coupled to the first match box, a second match box coupled to the switch box, and a remote plasma source coupled to the second match box.
摘要翻译：提供了用于处理基板和处理处理室的装置和方法。在一个实施例中，提供一种用于处理包括电源，耦合到电源的开关盒和具有可在第一位置和第二位置之间互换的开关的开关盒的基板的设备，耦合到开关的第一匹配盒耦合到第一匹配盒的等离子体发生器，耦合到开关盒的第二匹配盒以及耦合到第二匹配盒的远程等离子体源。

10. 发明授权

US08357435B2 Flowable dielectric equipment and processes 有权
标题翻译：可流动介质设备和工艺
公开(公告)号：US08357435B2
公开(公告)日：2013-01-22
申请号：US12210982
申请日：2008-09-15
申请人： Dmitry Lubomirsky , Qiwei Liang , Jang Gyoo Yang
发明人： Dmitry Lubomirsky , Qiwei Liang , Jang Gyoo Yang
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： B08B7/00 , C23C16/4405 , C23C16/452 , C23C16/45514 , C23C16/509 , H01J37/32449
摘要： Methods of depositing and curing a dielectric material on a substrate are described. The methods may include the steps of providing a processing chamber partitioned into a first plasma region and a second plasma region, and delivering the substrate to the processing chamber, where the substrate occupies a portion of the second plasma region. The methods may further include forming a first plasma in the first plasma region, where the first plasma does not directly contact with the substrate, and depositing the dielectric material on the substrate to form a dielectric layer. One or more reactants excited by the first plasma are used in the deposition of the dielectric material. The methods may additional include curing the dielectric layer by forming a second plasma in the second plasma region, where one or more carbon-containing species is removed from the dielectric layer.
摘要翻译：描述了在衬底上沉积和固化电介质材料的方法。该方法可以包括以下步骤：提供分隔成第一等离子体区域和第二等离子体区域的处理室，以及将衬底输送到处理室，其中衬底占据第二等离子体区域的一部分。所述方法可以进一步包括在第一等离子体区域中形成第一等离子体，其中第一等离子体不直接与衬底接触，并将电介质材料沉积在衬底上以形成电介质层。在电介质材料的沉积中使用由第一等离子体激发的一种或多种反应物。所述方法可以包括通过在第二等离子体区域中形成第二等离子体来固化介电层，其中从电介质层去除一个或多个含碳物质。

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