专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06765235B2 Array of semiconductor elements with paired driving scheme 有权
标题翻译：具有配对驱动方案的半导体元件阵列
公开(公告)号：US06765235B2
公开(公告)日：2004-07-20
申请号：US10373404
申请日：2003-02-25
申请人： Masumi Taninaka , Hiroyuki Fujiwara , Hiroshi Hamano , Masaharu Nobori
发明人： Masumi Taninaka , Hiroyuki Fujiwara , Hiroshi Hamano , Masaharu Nobori
IPC分类号： H01L3300
CPC分类号： H01L27/153 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has a substantially linear array of semiconductor blocks of one conductive type, each includes a diffusion region of the opposite conductive type and a electrode. The array is paralleled by an array of electrode pads, each connected to two semiconductor blocks, being connected to the diffusion region in one of the two semiconductor blocks and to the electrode in the other one of the two semiconductor blocks. The electrode pad can thus activate both semiconductor blocks, activating one semiconductor block when placed at one potential, and activating the other semiconductor block when placed at another potential. Efficient driving with a comparatively small number of electrode pads thus becomes possible.
摘要翻译：半导体器件具有一个导电类型的半导体块的基本线性阵列，每个包括相反导电类型的扩散区域和电极。该阵列由一组电极焊盘并联，每个电极焊盘连接到两个半导体块，连接到两个半导体块之一中的扩散区域和两个半导体块中的另一个中的电极。因此，电极焊盘可以激活两个半导体块，当放置在一个电位时激活一个半导体块，并且当放置在另一个电位时激活另一个半导体块。因此，可以用相对较少数量的电极垫进行有效驱动。

2. 发明授权

US06858875B2 Light-emitting-element array 有权
标题翻译：发光元件阵列
公开(公告)号：US06858875B2
公开(公告)日：2005-02-22
申请号：US10630936
申请日：2003-07-31
申请人： Hiroshi Hamano , Masumi Taninaka , Masaharu Nobori , Masumi Koizumi
发明人： Hiroshi Hamano , Masumi Taninaka , Masaharu Nobori , Masumi Koizumi
IPC分类号： H01L23/12 , B41J2/45 , H01L27/15 , H01L33/08 , H01L33/30 , H01L33/48 , H01L33/00 , H01L21/00
CPC分类号： H01L27/153 , B41J2/45
摘要： A light-emitting-element array has a semiconductor layer formed on a current-blocking layer. Light-emitting elements are formed in the semiconductor layer by diffusion of an impurity of a different conductive type. An isolation trench divides the semiconductor layer into a first region and a remaining region, and divides the array of light-emitting elements into segments disposed alternately in these two regions, each segment preferably including one or two light-emitting elements. A first shared interconnecting pad is electrically coupled to the light-emitting elements in the first region by electrical paths not crossing the isolation trench. A second shared interconnecting pad is electrically coupled to light-emitting elements in the remaining semiconductor region by electrical paths crossing the isolation trench. The array can then be driven by a number of separate interconnecting pads equal to half the number of the light-emitting elements.
摘要翻译：发光元件阵列具有形成在电流阻挡层上的半导体层。通过不同导电类型的杂质的扩散在半导体层中形成发光元件。隔离沟槽将半导体层划分成第一区域和剩余区域，并且将发光元件阵列分成交替布置在这两个区域中的区段，每个区段优选地包括一个或两个发光元件。第一共享互连焊盘通过不穿过隔离沟槽的电路径电耦合到第一区域中的发光元件。第二共享互连焊盘通过穿过隔离沟槽的电路径电耦合到剩余半导体区域中的发光元件。阵列然后可以由等于发光元件数量的一半的多个单独的互连焊盘驱动。

3. 发明授权

US07754512B2 Method of fabricating semiconductor light-emitting devices with isolation trenches 失效
标题翻译：制造具有隔离沟槽的半导体发光器件的方法
公开(公告)号：US07754512B2
公开(公告)日：2010-07-13
申请号：US11119805
申请日：2005-05-03
申请人： Masumi Taninaka , Hiroyuki Fujiwara , Susumu Ozawa , Masaharu Nobori
发明人： Masumi Taninaka , Hiroyuki Fujiwara , Susumu Ozawa , Masaharu Nobori
IPC分类号： H01L33/00 , H01L21/00 , H01L33/08
CPC分类号： B41J2/45 , H01L27/153
摘要： According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion region, then forming trenches that divide the diffusion region into multiple regions, or by forming individual diffusion regions and then forming trenches between them. The trenches prevent overlap between adjacent light-emitting elements, regardless of their junction depth, enabling a high-density array to be fabricated while maintaining adequate junction depth.
摘要翻译：根据本发明，发光半导体器件具有通过隔离沟槽分离的发光元件，优选在每个发光元件的两侧。该器件可以通过形成单个带状扩散区域，然后形成将扩散区域分成多个区域的沟槽，或者通过形成各个扩散区域，然后在它们之间形成沟槽来制造。沟槽防止相邻发光元件之间的重叠，而不管它们的结深度如何，使得能够制造高密度阵列同时保持足够的结深度。

4. 发明授权

US5955748A End face light emitting type light emitting diode 失效
标题翻译：端面发光型发光二极管
公开(公告)号：US5955748A
公开(公告)日：1999-09-21
申请号：US942302
申请日：1997-10-01
申请人： Yukio Nakamura , Mitsuhiko Ogihara , Masumi Taninaka , Takao Kusano , Masumi Koizumi , Hiroyuki Fujiwara , Makoto Ishimaru , Masaharu Nobori , Tsutomu Nomoto
发明人： Yukio Nakamura , Mitsuhiko Ogihara , Masumi Taninaka , Takao Kusano , Masumi Koizumi , Hiroyuki Fujiwara , Makoto Ishimaru , Masaharu Nobori , Tsutomu Nomoto
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L21/301 , H01L33/00 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/36 , H01L33/44
CPC分类号： B41J2/45 , H01L33/0008 , H01L33/20 , H01L33/44 , H01L2224/48137 , H01L33/0095
摘要： An end facet light emitting type LED has a slanted light emitting side wall relative to a substrate surface. A method for manufacturing end facet light emitting type light emitting devices prevents the pn-junction regions of the devices from being damaged while a semiconductor wafer is diced to separate light emitting devices from one another. A recess is formed on the semiconductor wafer having a depth which is deeper than the pn-junction. A portion to be cut during dicing of the wafer is vertically and horizontally separated from the pn-junction regions, so that if cracks occur when the wafer is diced, the cracks do not affect the light emitting characteristics of the devices.
摘要翻译：端面发光型LED相对于基板表面具有倾斜的发光侧壁。一种用于制造端面发光型发光器件的方法防止了在将半导体晶片切割以将发光器件彼此分离的同时，器件的pn结区域被损坏。在半导体晶片上形成有比pn结深的深度的凹部。在切割晶片期间待切割的部分与pn结区域垂直和水平分离，使得如果在切割晶片时发生裂纹，则裂纹不会影响器件的发光特性。

5. 发明申请

US20050189547A1 Semiconductor light-emitting device with isolation trenches, and method of fabricating same 失效
公开(公告)号：US20050189547A1
公开(公告)日：2005-09-01
申请号：US11119805
申请日：2005-05-03
申请人： Masumi Taninaka , Hiroyuki Fujiwara , Susumu Ozawa , Masaharu Nobori
发明人： Masumi Taninaka , Hiroyuki Fujiwara , Susumu Ozawa , Masaharu Nobori
IPC分类号： H01L21/764 , H01L21/76 , H01L27/15 , H01L33/08 , H01L33/30 , H01L21/00 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： B41J2/45 , H01L27/153
摘要： According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion region, then forming trenches that divide the diffusion region into multiple regions, or by forming individual diffusion regions and then forming trenches between them. The trenches prevent overlap between adjacent light-emitting elements, regardless of their junction depth, enabling a high-density array to be fabricated while maintaining adequate junction depth.

6. 发明授权

US06909122B2 Semiconductor light-emitting device with isolation trenches, and method of fabricating same 有权
标题翻译：具有隔离沟槽的半导体发光器件及其制造方法
公开(公告)号：US06909122B2
公开(公告)日：2005-06-21
申请号：US10374081
申请日：2003-02-27
申请人： Masumi Taninaka , Hiroyuki Fujiwara , Susumu Ozawa , Masaharu Nobori
发明人： Masumi Taninaka , Hiroyuki Fujiwara , Susumu Ozawa , Masaharu Nobori
IPC分类号： H01L21/764 , H01L21/76 , H01L27/15 , H01L33/08 , H01L33/30 , H01L29/207
CPC分类号： B41J2/45 , H01L27/153
摘要： According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion region, then forming trenches that divide the diffusion region into multiple regions, or by forming individual diffusion regions and then forming trenches between them. The trenches prevent overlap between adjacent light-emitting elements, regardless of their junction depth, enabling a high-density array to be fabricated while maintaining adequate junction depth.
摘要翻译：根据本发明，发光半导体器件具有通过隔离沟槽分离的发光元件，优选在每个发光元件的两侧。该器件可以通过形成单个带状扩散区域，然后形成将扩散区域分成多个区域的沟槽，或者通过形成各个扩散区域，然后在它们之间形成沟槽来制造。沟槽防止相邻发光元件之间的重叠，而不管它们的结深度如何，使得能够制造高密度阵列同时保持足够的结深度。

7. 发明授权

US06717184B2 Light-emitting element array having an element separating region 有权
标题翻译：具有元件分离区域的发光元件阵列
公开(公告)号：US06717184B2
公开(公告)日：2004-04-06
申请号：US10253730
申请日：2002-09-23
申请人： Masumi Taninaka , Masaharu Nobori , Mitsuhiko Ogihara
发明人： Masumi Taninaka , Masaharu Nobori , Mitsuhiko Ogihara
IPC分类号： H01L2715
CPC分类号： H01L27/153
摘要： A light-emitting array can be driven by a matrix-type driving operation. When the packaging density of light-emitting elements is to be increased, the width of the element-separating region should be made narrower. The element-separating region extends over a considerable distance and therefore is apt to be adversely affected by particles. This tends to prevent formation of a good element-separating region, lowering manufacturing yield. An n-side electrode is arranged close to a predetermined number of LEDs. An element-separating region is formed to surround the LEDs and the n-side electrode, thereby defining a plurality of n-type semiconductor blocks. The element-separating region has a first portion that extends in a direction parallel to the line of the LEDs aligned and a second portion that extend between adjacent blocks. The first portion is wider than the second portion.
摘要翻译：发光阵列可以通过矩阵型驱动操作来驱动。当要增加发光元件的封装密度时，应使元件分离区的宽度变窄。元件分离区域延伸相当长的距离，因此容易受到颗粒的不利影响。这倾向于防止形成良好的元素分离区域，降低制造成品率。 n侧电极靠近预定数量的LED布置。形成元件分离区域以包围LED和n侧电极，从而限定多个n型半导体块。元件分离区域具有沿平行于LED对准线的方向延伸的第一部分和在相邻块之间延伸的第二部分。第一部分比第二部分宽。

8. 发明授权

US5869848A End face light-emitting-type LED, end face light-emitting-type LED array and methods of manufacturing them 失效
标题翻译：端面发光型LED，端面发光型LED阵列及其制造方法
公开(公告)号：US5869848A
公开(公告)日：1999-02-09
申请号：US762417
申请日：1996-12-09
申请人： Masaharu Nobori , Hiroyuki Fujiwara , Masumi Koizumi , Aya Yamanaka , Makoto Ishimaru , Yukio Nakamura
发明人： Masaharu Nobori , Hiroyuki Fujiwara , Masumi Koizumi , Aya Yamanaka , Makoto Ishimaru , Yukio Nakamura
IPC分类号： H01L33/08 , H01L33/16 , H01L33/30 , H01L33/58 , H01L33/00
CPC分类号： H01L33/20 , H01L33/0008 , H01L33/24
摘要： An end face light-emitting-type LED has a first-conductive-type semiconductor substrate and a second-conductive-type diffusion region formed on a first surface of the first-conductive-type semiconductor substrate so as to have a depth within a predetermined value. The first-conductive-type semiconductor substrate has a second surface which meets the first surface at a predetermined angle with the first surface. A junction between the first-conductive-type semiconductor substrate and the second-conductive-type diffusion region includes an inclined portion with regard to the first surface in the vicinity of an edge portion of the junction which is on a side of the second surface, and light emerges from the junction via the second surface.
摘要翻译：端面发光型LED具有形成在第一导电型半导体衬底的第一表面上的第一导电型半导体衬底和第二导电型扩散区，以使其具有预定的深度值。第一导电型半导体衬底具有与第一表面成预定角度相交的第二表面。第一导电型半导体基板和第二导电型扩散区域之间的接合部包括在第二表面侧的接合部的边缘部附近的第一面的倾斜部，并且光从接合处经由第二表面出射。

9. 发明授权

US06291328B1 Opto-electronic device with self-aligned ohmic contact layer 有权
标题翻译：具有自对准欧姆接触层的光电器件
公开(公告)号：US06291328B1
公开(公告)日：2001-09-18
申请号：US09562340
申请日：2000-05-01
申请人： Masaharu Nobori , Hiroyuki Fujiwara , Masumi Koizumi
发明人： Masaharu Nobori , Hiroyuki Fujiwara , Masumi Koizumi
IPC分类号： H01L2122
CPC分类号： H01L33/40 , H01L21/2258 , H01L21/28575 , H01L33/005 , H01L33/38
摘要： An opto-electronic device has a diffusion area of one conductive type formed in a semiconductor substrate of another conductive type, an ohmic contact layer making contact with the diffusion area, and an electrode making contact with the ohmic contact layer. The diffusion area is formed by solid-phase diffusion. The same mask is used to define the patterns of both the diffusion source layer and the ohmic contact layer, so that the ohmic contact layer is self-aligned with the diffusion area.
摘要翻译：光电器件具有形成在另一导电类型的半导体衬底中的一种导电类型的扩散区域，与扩散区域接触的欧姆接触层，以及与欧姆接触层接触的电极。扩散区域由固相扩散形成。使用相同的掩模来限定扩散源层和欧姆接触层的图案，使得欧姆接触层与扩散区域自对准。

10. 发明授权

US06541796B2 Opto-electronic device with self-aligned ohmic contact layer 有权
标题翻译：具有自对准欧姆接触层的光电器件
公开(公告)号：US06541796B2
公开(公告)日：2003-04-01
申请号：US09933341
申请日：2001-08-20
申请人： Masaharu Nobori , Hiroyuki Fujiwara , Masumi Koizumi
发明人： Masaharu Nobori , Hiroyuki Fujiwara , Masumi Koizumi
IPC分类号： H01L2715
CPC分类号： H01L33/40 , H01L21/2258 , H01L21/28575 , H01L33/005 , H01L33/38
摘要： An opto-electronic device has a diffusion area of one conductive type formed in a semiconductor substrate of another conductive type, an ohmic contact layer making contact with the diffusion area, and an electrode making contact with the ohmic contact layer. The diffusion area is formed by solid-phase diffusion. The same mask is used to define the patterns of both the diffusion source layer and the ohmic contact layer, so that the ohmic contact layer is self-aligned with the diffusion area.
摘要翻译：光电器件具有形成在另一导电类型的半导体衬底中的一种导电类型的扩散区域，与扩散区域接触的欧姆接触层，以及与欧姆接触层接触的电极。扩散区域由固相扩散形成。使用相同的掩模来限定扩散源层和欧姆接触层的图案，使得欧姆接触层与扩散区域自对准。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式