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1. 发明授权

US06858875B2 Light-emitting-element array 有权
标题翻译：发光元件阵列
公开(公告)号：US06858875B2
公开(公告)日：2005-02-22
申请号：US10630936
申请日：2003-07-31
申请人： Hiroshi Hamano , Masumi Taninaka , Masaharu Nobori , Masumi Koizumi
发明人： Hiroshi Hamano , Masumi Taninaka , Masaharu Nobori , Masumi Koizumi
IPC分类号： H01L23/12 , B41J2/45 , H01L27/15 , H01L33/08 , H01L33/30 , H01L33/48 , H01L33/00 , H01L21/00
CPC分类号： H01L27/153 , B41J2/45
摘要： A light-emitting-element array has a semiconductor layer formed on a current-blocking layer. Light-emitting elements are formed in the semiconductor layer by diffusion of an impurity of a different conductive type. An isolation trench divides the semiconductor layer into a first region and a remaining region, and divides the array of light-emitting elements into segments disposed alternately in these two regions, each segment preferably including one or two light-emitting elements. A first shared interconnecting pad is electrically coupled to the light-emitting elements in the first region by electrical paths not crossing the isolation trench. A second shared interconnecting pad is electrically coupled to light-emitting elements in the remaining semiconductor region by electrical paths crossing the isolation trench. The array can then be driven by a number of separate interconnecting pads equal to half the number of the light-emitting elements.
摘要翻译：发光元件阵列具有形成在电流阻挡层上的半导体层。通过不同导电类型的杂质的扩散在半导体层中形成发光元件。隔离沟槽将半导体层划分成第一区域和剩余区域，并且将发光元件阵列分成交替布置在这两个区域中的区段，每个区段优选地包括一个或两个发光元件。第一共享互连焊盘通过不穿过隔离沟槽的电路径电耦合到第一区域中的发光元件。第二共享互连焊盘通过穿过隔离沟槽的电路径电耦合到剩余半导体区域中的发光元件。阵列然后可以由等于发光元件数量的一半的多个单独的互连焊盘驱动。

2. 发明授权

US06765235B2 Array of semiconductor elements with paired driving scheme 有权
标题翻译：具有配对驱动方案的半导体元件阵列
公开(公告)号：US06765235B2
公开(公告)日：2004-07-20
申请号：US10373404
申请日：2003-02-25
申请人： Masumi Taninaka , Hiroyuki Fujiwara , Hiroshi Hamano , Masaharu Nobori
发明人： Masumi Taninaka , Hiroyuki Fujiwara , Hiroshi Hamano , Masaharu Nobori
IPC分类号： H01L3300
CPC分类号： H01L27/153 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has a substantially linear array of semiconductor blocks of one conductive type, each includes a diffusion region of the opposite conductive type and a electrode. The array is paralleled by an array of electrode pads, each connected to two semiconductor blocks, being connected to the diffusion region in one of the two semiconductor blocks and to the electrode in the other one of the two semiconductor blocks. The electrode pad can thus activate both semiconductor blocks, activating one semiconductor block when placed at one potential, and activating the other semiconductor block when placed at another potential. Efficient driving with a comparatively small number of electrode pads thus becomes possible.
摘要翻译：半导体器件具有一个导电类型的半导体块的基本线性阵列，每个包括相反导电类型的扩散区域和电极。该阵列由一组电极焊盘并联，每个电极焊盘连接到两个半导体块，连接到两个半导体块之一中的扩散区域和两个半导体块中的另一个中的电极。因此，电极焊盘可以激活两个半导体块，当放置在一个电位时激活一个半导体块，并且当放置在另一个电位时激活另一个半导体块。因此，可以用相对较少数量的电极垫进行有效驱动。

3. 发明授权

US08130253B2 Composite semiconductor device, print head and image forming apparatus 有权
标题翻译：复合半导体器件，打印头和成像设备
公开(公告)号：US08130253B2
公开(公告)日：2012-03-06
申请号：US12457019
申请日：2009-05-29
申请人： Kazuya Ohkawa , Shinya Jyumonji , Masumi Taninaka , Hiroshi Hamano , Masumi Koizumi
发明人： Kazuya Ohkawa , Shinya Jyumonji , Masumi Taninaka , Hiroshi Hamano , Masumi Koizumi
IPC分类号： B41J2/45 , H01L21/00
CPC分类号： B41J2/45 , B41J2202/50 , H01L21/78
摘要： A composite semiconductor device is formed of a semiconductor wafer having a plurality of device-forming areas in which semiconductor elements are formed and dicing areas defined between the device-forming areas, and is formed by dicing the semiconductor wafer at the dicing areas. The composite semiconductor device includes a semiconductor substrate, and a plurality of wiring layers layered on the semiconductor substrate. The wiring layers include at least conductive films. Connecting portions are formed to connect the wiring layers with each other in a layering direction of the wiring layers. Each of the connecting portions is disposed on the device-forming area side with respect to a dicing position defined in the dicing area.
摘要翻译：复合半导体器件由半导体晶片形成，半导体晶片具有形成半导体元件的多个器件形成区域和限定在器件形成区域之间的切割区域，并且通过在切割区域切割半导体晶片而形成。复合半导体器件包括半导体衬底和层叠在半导体衬底上的多个布线层。布线层至少包括导电膜。形成连接部，在配线层的层叠方向上连接布线层。每个连接部分相对于在切割区域中限定的切割位置设置在装置形成区域侧。

4. 发明申请

US20090322852A1 Composite semiconductor device, print head and image forming apparatus 有权
标题翻译：复合半导体器件，打印头和成像设备
公开(公告)号：US20090322852A1
公开(公告)日：2009-12-31
申请号：US12457019
申请日：2009-05-29
申请人： Kazuya Ohkawa , Shinya Jyumonji , Masumi Taninaka , Hiroshi Hamano , Masumi Koizumi
发明人： Kazuya Ohkawa , Shinya Jyumonji , Masumi Taninaka , Hiroshi Hamano , Masumi Koizumi
IPC分类号： B41J27/00 , H01L23/48
CPC分类号： B41J2/45 , B41J2202/50 , H01L21/78
摘要： A composite semiconductor device is formed of a semiconductor wafer having a plurality of device-forming areas in which semiconductor elements are formed and dicing areas defined between the device-forming areas, and is formed by dicing the semiconductor wafer at the dicing areas. The composite semiconductor device includes a semiconductor substrate, and a plurality of wiring layers layered on the semiconductor substrate. The wiring layers include at least conductive films. Connecting portions are formed to connect the wiring layers with each other in a layering direction of the wiring layers. Each of the connecting portions is disposed on the device-forming area side with respect to a dicing position defined in the dicing area.
摘要翻译：复合半导体器件由半导体晶片形成，半导体晶片具有形成半导体元件的多个器件形成区域和限定在器件形成区域之间的切割区域，并且通过在切割区域切割半导体晶片而形成。复合半导体器件包括半导体衬底和层叠在半导体衬底上的多个布线层。布线层至少包括导电膜。形成连接部，在配线层的层叠方向上连接布线层。每个连接部分相对于在切割区域中限定的切割位置设置在装置形成区域侧。

5. 发明授权

US07847304B2 LED array, LED head and image recording apparatus 有权
标题翻译： LED阵列，LED头和图像记录装置
公开(公告)号：US07847304B2
公开(公告)日：2010-12-07
申请号：US11692249
申请日：2007-03-28
申请人： Masumi Taninaka , Masumi Koizumi , Hiroshi Hamano
发明人： Masumi Taninaka , Masumi Koizumi , Hiroshi Hamano
IPC分类号： H01L29/201
CPC分类号： B41J2/45 , H01L25/0753 , H01L25/0756 , H01L2924/0002 , H01L2924/00
摘要： An LED array includes a semiconductor substrate and a plurality of first LED portions formed integrally on a surface of the semiconductor substrate. The first LED portions emit light of a predetermined color. The LED array includes a plurality of second LED portions fixed to the semiconductor substrate and are disposed corresponding to the first LED portions. The second LED portions emit light whose color is different from the first LED portions. The second LED portions are so disposed that active layers of the second LED portions are substantially at the same height as active layers of the first LED portions.
摘要翻译： LED阵列包括半导体衬底和整体地形成在半导体衬底的表面上的多个第一LED部分。第一LED部分发射预定颜色的光。 LED阵列包括固定到半导体衬底的多个第二LED部分，并且对应于第一LED部分设置。第二LED部分发光，其颜色不同于第一LED部分。第二LED部分被布置成使得第二LED部分的有源层与第一LED部分的有源层基本上处于相同的高度。

6. 发明申请

US20070228397A1 LED ARRAY, LED HEAD AND IMAGE RECORDING APPARATUS 有权
标题翻译： LED阵列，LED头和图像记录装置
公开(公告)号：US20070228397A1
公开(公告)日：2007-10-04
申请号：US11692249
申请日：2007-03-28
申请人： Masumi Taninaka , Masumi Koizumi , Hiroshi Hamano
发明人： Masumi Taninaka , Masumi Koizumi , Hiroshi Hamano
IPC分类号： H01L33/00
CPC分类号： B41J2/45 , H01L25/0753 , H01L25/0756 , H01L2924/0002 , H01L2924/00
摘要： An LED array includes a semiconductor substrate and a plurality of first LED portions formed integrally on a surface of the semiconductor substrate. The first LED portions emit light of a predetermined color. The LED array includes a plurality of second LED portions fixed to the semiconductor substrate and are disposed corresponding to the first LED portions. The second LED portions emit light whose color is different from the first LED portions The second LED portions are so disposed that active layers of the second LED portions are substantially at the same height as active layers of the first LED portions.
摘要翻译： LED阵列包括半导体衬底和整体地形成在半导体衬底的表面上的多个第一LED部分。第一LED部分发射预定颜色的光。 LED阵列包括固定到半导体衬底的多个第二LED部分，并且对应于第一LED部分设置。第二LED部分发射其颜色不同于第一LED部分的光。第二LED部分被布置成使得第二LED部分的有源层与第一LED部分的有源层基本上处于相同的高度。

7. 发明授权

US06211537B1 LED array 失效
标题翻译： LED阵列
公开(公告)号：US06211537B1
公开(公告)日：2001-04-03
申请号：US09040450
申请日：1998-03-18
申请人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
发明人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
IPC分类号： H01L3300
CPC分类号： B41J2/45 , H01L27/153 , H01L33/0008
摘要： A 1200 dpi LED may be manufactured without highly accurate mask alignment and provide good light radiation efficiency. A first interlayer dielectric is formed on a semiconductor substrate and has a plurality of first windows formed therein and aligned in a row. A diffusion region is formed in the semiconductor substrate through each of the first windows. An electrode is formed to have an area in contact with the corresponding diffusion region. Another electrode is formed on the other side of the substrate. A second interlayer dielectric is formed on the first interlayer dielectric such that the second interlayer dielectric does not overlap the area of the electrode and does not extend to a first perimeter of the area.
摘要翻译：可以在没有高精度掩模对准的情况下制造1200dpi的LED，并提供良好的光辐射效率。第一层间电介质形成在半导体衬底上，并且具有形成在其中的多个第一窗口并排成一行。通过每个第一窗口在半导体衬底中形成扩散区域。电极形成为具有与相应的扩散区域接触的区域。另一电极形成在基板的另一侧。第二层间电介质形成在第一层间电介质上，使得第二层间电介质不与电极的区域重叠，并且不延伸到该区域的第一周边。

8. 发明授权

US6064418A Led array, print head, and electrophotographic printer 失效
标题翻译： LED阵列，打印头和电子照相打印机
公开(公告)号：US6064418A
公开(公告)日：2000-05-16
申请号：US57611
申请日：1998-04-09
申请人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
发明人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L27/15 , H01L33/08 , H01L33/38 , H01L33/44 , H01L33/58
CPC分类号： H01L33/0008 , B41J2/45 , H01L27/153
摘要： In an array of light-emitting diodes formed by diffusion of an impurity into a semiconductor substrate, the width of the diodes in the array direction is between four-tenths and five-tenths of the array pitch. The width of the windows above the diodes is between three-tenths and four-tenths of the array pitch. Between one-fourth and one-half of the surface area of each diode is covered by an electrode making contact with the diode through the window. The distance from the centers of the light-emitting diodes at the ends of the array to the edges of the substrate is between twenty-five and sixty-five hundredths of the array pitch.
摘要翻译：在通过将杂质扩散到半导体衬底中形成的发光二极管的阵列中，二极管在阵列方向上的宽度是阵列间距的十分之五十分之一。二极管上方的窗口的宽度在阵列间距的十分之三到四分之一之间。每个二极管的四分之一到四分之一的表面积由与二极管通过窗口接触的电极覆盖。从阵列端部的发光二极管的中心到基板的边缘的距离在阵列间距的二十五分之一到六百零五分之间。

9. 发明授权

US5972729A Method of manufacturing light-receiving/emitting diode array chip 失效
标题翻译：制造光接收/发光二极管阵列芯片的方法
公开(公告)号：US5972729A
公开(公告)日：1999-10-26
申请号：US31534
申请日：1998-02-27
申请人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
发明人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L21/301 , H01L27/15 , H01L31/10 , H01L33/08 , H01L33/30 , H01L33/44 , H01L33/48 , H01L33/00
CPC分类号： H01L27/153 , B41J2/45 , H01L33/0008 , Y10S438/975
摘要： A method of manufacturing a light-emitting or a light-receiving diode array chip. A first interlayer dielectric is formed in each of a plurality of chip areas on a substrate of a first conductivity type. Impurity diffusion regions of a second conductivity type are formed in the substrate using the first interlayer dielectric as a diffusion mask. An electrode is formed in contact with each of the impurity diffusion regions. The substrate is separated so that the plurality of chip areas are separated into individual chips. A second interlayer dielectric may be formed on the first interlayer dielectric after forming the impurity diffusion regions. The second interlayer dielectric is formed such that the second interlayer dielectric is absent from a second area along which the substrate is separated into the individual chips, at least in the vicinity of the last one of a plurality of windows. Island-shaped patterns may be formed on the interlayer dielectric so as to hold the interlayer dielectric onto the substrate. The first interlayer dielectric may be removed such that the first interlayer dielectric is absent from the second area, at least in the vicinity of the last one of the plurality of windows.
摘要翻译：一种制造发光或光接收二极管阵列芯片的方法。在第一导电类型的衬底上的多个芯片区域中的每一个中形成第一层间电介质。使用第一层间电介质作为扩散掩模，在衬底中形成第二导电类型的杂质扩散区域。形成与每个杂质扩散区接触的电极。分离基板使得多个芯片区域分离为单独的芯片。在形成杂质扩散区之后，可以在第一层间电介质上形成第二层间电介质。第二层间电介质形成为使得第二层间电介质不存在于第二区域中，至少在多个窗口中的最后一个窗口附近，基板沿着该第二区域分离成单独的芯片。可以在层间电介质上形成岛状图案，以将层间电介质保持在基板上。可以去除第一层间电介质，使得至少在多个窗口中的最后一个窗口附近，第二区域中不存在第一层间电介质。

10. 发明授权

US06762437B2 Light emitting semiconductor device 有权
标题翻译：发光半导体器件
公开(公告)号：US06762437B2
公开(公告)日：2004-07-13
申请号：US10322740
申请日：2002-12-19
申请人： Mitsuhiko Ogihara , Hiroshi Hamano , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Hiroshi Hamano , Masumi Taninaka
IPC分类号： H01L3300
CPC分类号： H01L33/14 , B41J2/45 , H01L27/153
摘要： A light emitting semiconductor device comprises an upper cladding layer (106) consisting of a first upper cladding layer (106a) provided on an active layer (105) and a second upper cladding layer (106b) provided on the first upper cladding layer (106a) to increase the light emitting efficiency and reduce the defective ratio in formation of a patterned layer. The energy band gap (Eg(106a)) of the first upper cladding layer (106a) is larger than the energy band gap (Eg(106b)) of the second upper cladding layer (106b), which is larger than the energy band gap (Eg(105)) of the active layer (105). One of a patterned layer, an dielectric interlayer (109) has an etched region at a predetermined area thereof so that at least a part of the upper cladding layer (106) or a second conductive type semiconductor region (108) is exposed.
摘要翻译：一种发光半导体器件包括由设置在有源层（105）上的第一上包层（106a）和设置在第一上包层（106a）上的第二上包层（106b）组成的上包层（106）以增加发光效率并降低形成图案层的缺陷率。第一上包层（106a）的能带隙（Eg（106a））大于第二上包层（106b）的能带隙（Eg（106b）），其大于能带隙（Eg（105））。图案层之一，电介质中间层（109）在其预定区域具有蚀刻区域，使得上覆层（106）或第二导电类型半导体区域（108）的至少一部分露出。

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