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1. 发明授权

US5869848A End face light-emitting-type LED, end face light-emitting-type LED array and methods of manufacturing them 失效
标题翻译：端面发光型LED，端面发光型LED阵列及其制造方法
公开(公告)号：US5869848A
公开(公告)日：1999-02-09
申请号：US762417
申请日：1996-12-09
申请人： Masaharu Nobori , Hiroyuki Fujiwara , Masumi Koizumi , Aya Yamanaka , Makoto Ishimaru , Yukio Nakamura
发明人： Masaharu Nobori , Hiroyuki Fujiwara , Masumi Koizumi , Aya Yamanaka , Makoto Ishimaru , Yukio Nakamura
IPC分类号： H01L33/08 , H01L33/16 , H01L33/30 , H01L33/58 , H01L33/00
CPC分类号： H01L33/20 , H01L33/0008 , H01L33/24
摘要： An end face light-emitting-type LED has a first-conductive-type semiconductor substrate and a second-conductive-type diffusion region formed on a first surface of the first-conductive-type semiconductor substrate so as to have a depth within a predetermined value. The first-conductive-type semiconductor substrate has a second surface which meets the first surface at a predetermined angle with the first surface. A junction between the first-conductive-type semiconductor substrate and the second-conductive-type diffusion region includes an inclined portion with regard to the first surface in the vicinity of an edge portion of the junction which is on a side of the second surface, and light emerges from the junction via the second surface.
摘要翻译：端面发光型LED具有形成在第一导电型半导体衬底的第一表面上的第一导电型半导体衬底和第二导电型扩散区，以使其具有预定的深度值。第一导电型半导体衬底具有与第一表面成预定角度相交的第二表面。第一导电型半导体基板和第二导电型扩散区域之间的接合部包括在第二表面侧的接合部的边缘部附近的第一面的倾斜部，并且光从接合处经由第二表面出射。

2. 发明授权

US06291328B1 Opto-electronic device with self-aligned ohmic contact layer 有权
标题翻译：具有自对准欧姆接触层的光电器件
公开(公告)号：US06291328B1
公开(公告)日：2001-09-18
申请号：US09562340
申请日：2000-05-01
申请人： Masaharu Nobori , Hiroyuki Fujiwara , Masumi Koizumi
发明人： Masaharu Nobori , Hiroyuki Fujiwara , Masumi Koizumi
IPC分类号： H01L2122
CPC分类号： H01L33/40 , H01L21/2258 , H01L21/28575 , H01L33/005 , H01L33/38
摘要： An opto-electronic device has a diffusion area of one conductive type formed in a semiconductor substrate of another conductive type, an ohmic contact layer making contact with the diffusion area, and an electrode making contact with the ohmic contact layer. The diffusion area is formed by solid-phase diffusion. The same mask is used to define the patterns of both the diffusion source layer and the ohmic contact layer, so that the ohmic contact layer is self-aligned with the diffusion area.
摘要翻译：光电器件具有形成在另一导电类型的半导体衬底中的一种导电类型的扩散区域，与扩散区域接触的欧姆接触层，以及与欧姆接触层接触的电极。扩散区域由固相扩散形成。使用相同的掩模来限定扩散源层和欧姆接触层的图案，使得欧姆接触层与扩散区域自对准。

3. 发明授权

US5955748A End face light emitting type light emitting diode 失效
标题翻译：端面发光型发光二极管
公开(公告)号：US5955748A
公开(公告)日：1999-09-21
申请号：US942302
申请日：1997-10-01
申请人： Yukio Nakamura , Mitsuhiko Ogihara , Masumi Taninaka , Takao Kusano , Masumi Koizumi , Hiroyuki Fujiwara , Makoto Ishimaru , Masaharu Nobori , Tsutomu Nomoto
发明人： Yukio Nakamura , Mitsuhiko Ogihara , Masumi Taninaka , Takao Kusano , Masumi Koizumi , Hiroyuki Fujiwara , Makoto Ishimaru , Masaharu Nobori , Tsutomu Nomoto
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L21/301 , H01L33/00 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/36 , H01L33/44
CPC分类号： B41J2/45 , H01L33/0008 , H01L33/20 , H01L33/44 , H01L2224/48137 , H01L33/0095
摘要： An end facet light emitting type LED has a slanted light emitting side wall relative to a substrate surface. A method for manufacturing end facet light emitting type light emitting devices prevents the pn-junction regions of the devices from being damaged while a semiconductor wafer is diced to separate light emitting devices from one another. A recess is formed on the semiconductor wafer having a depth which is deeper than the pn-junction. A portion to be cut during dicing of the wafer is vertically and horizontally separated from the pn-junction regions, so that if cracks occur when the wafer is diced, the cracks do not affect the light emitting characteristics of the devices.
摘要翻译：端面发光型LED相对于基板表面具有倾斜的发光侧壁。一种用于制造端面发光型发光器件的方法防止了在将半导体晶片切割以将发光器件彼此分离的同时，器件的pn结区域被损坏。在半导体晶片上形成有比pn结深的深度的凹部。在切割晶片期间待切割的部分与pn结区域垂直和水平分离，使得如果在切割晶片时发生裂纹，则裂纹不会影响器件的发光特性。

4. 发明授权

US06541796B2 Opto-electronic device with self-aligned ohmic contact layer 有权
标题翻译：具有自对准欧姆接触层的光电器件
公开(公告)号：US06541796B2
公开(公告)日：2003-04-01
申请号：US09933341
申请日：2001-08-20
申请人： Masaharu Nobori , Hiroyuki Fujiwara , Masumi Koizumi
发明人： Masaharu Nobori , Hiroyuki Fujiwara , Masumi Koizumi
IPC分类号： H01L2715
CPC分类号： H01L33/40 , H01L21/2258 , H01L21/28575 , H01L33/005 , H01L33/38
摘要： An opto-electronic device has a diffusion area of one conductive type formed in a semiconductor substrate of another conductive type, an ohmic contact layer making contact with the diffusion area, and an electrode making contact with the ohmic contact layer. The diffusion area is formed by solid-phase diffusion. The same mask is used to define the patterns of both the diffusion source layer and the ohmic contact layer, so that the ohmic contact layer is self-aligned with the diffusion area.
摘要翻译：光电器件具有形成在另一导电类型的半导体衬底中的一种导电类型的扩散区域，与扩散区域接触的欧姆接触层，以及与欧姆接触层接触的电极。扩散区域由固相扩散形成。使用相同的掩模来限定扩散源层和欧姆接触层的图案，使得欧姆接触层与扩散区域自对准。

5. 发明授权

US5866439A Method of fabricating an end face light emitting type light-emitting diode and a light-emitting diode array device 失效
标题翻译：端面发光型发光二极管的制造方法和发光二极管阵列装置
公开(公告)号：US5866439A
公开(公告)日：1999-02-02
申请号：US687046
申请日：1996-07-18
申请人： Masaharu Nobori , Hiroyuki Fujiwara , Masumi Koizumi , Makoto Ishimaru
发明人： Masaharu Nobori , Hiroyuki Fujiwara , Masumi Koizumi , Makoto Ishimaru
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L33/30 , H01L33/44 , H01L21/383
CPC分类号： H01L33/0008 , H01L33/0062
摘要： In a fabricating method for an end face light emitting type LED array, p-type regions are formed by diffusing impurities into portions of a semiconductor substrate, using a diffusion prevention film as a mask. Subsequently, using the diffusion prevention film as a mask again, the semiconductor substrate is etched to form a concave portion therein so that light-emission end faces are formed on a side of the concave portion. With this arrangement, a positional misalignment between the p-type regions and the light-emission end faces is prevented.
摘要翻译：在端面发光型LED阵列的制造方法中，使用扩散防止膜作为掩模，将杂质扩散到半导体衬底的部分中形成p型区域。随后，再次使用防扩散膜作为掩模，蚀刻半导体衬底以在其中形成凹部，使得发光端面形成在凹部的一侧。由此，能够防止p型区域与发光端面之间的位置偏移。

6. 发明授权

US6023104A LED array alignment mark, method and mask for forming same, and LED array alignment method 失效
标题翻译： LED阵列对准标记，其形成方法和掩模，以及LED阵列对准方法
公开(公告)号：US6023104A
公开(公告)日：2000-02-08
申请号：US330149
申请日：1999-06-11
申请人： Masumi Koizumi , Yukio Nakamura , Masaharu Nobori , Aya Yamanaka
发明人： Masumi Koizumi , Yukio Nakamura , Masaharu Nobori , Aya Yamanaka
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , B41J21/16 , B41J25/20 , H05K13/04 , H01L23/544
CPC分类号： H01L33/20 , B41J2/45
摘要： An alignment mark on a light-emitting diode (LED) array chip is formed together with the light-emitting areas of the diodes in the array, by use of a combined mask having a first part and a second part. An impurity is introduced through windows in the first part to form the light-emitting areas. Next the windows are covered with an etching resist, and the chip substrate is etched to create a topographic relief feature defined by the second part of the mask. This topographic relief feature is used as an alignment mark. When LED array chips having these alignment marks are mounted on a supporting surface, they are aligned by recognizing patterns of light reflected from the topographic relief, thereby detecting the positions of the alignment marks.
摘要翻译：通过使用具有第一部分和第二部分的组合掩模，在发光二极管（LED）阵列芯片上的对准标记与阵列中的二极管的发光区域一起形成。通过第一部分中的窗口引入杂质以形成发光区域。接下来，窗口被抗蚀剂覆盖，并且蚀刻芯片基板以产生由掩模的第二部分限定的地形浮雕特征。该地形浮雕功能用作对准标记。当具有这些对准标记的LED阵列芯片安装在支撑表面上时，通过识别从地形浮雕反射的光的图案来对准它们，从而检测对准标记的位置。

7. 发明授权

US06858875B2 Light-emitting-element array 有权
标题翻译：发光元件阵列
公开(公告)号：US06858875B2
公开(公告)日：2005-02-22
申请号：US10630936
申请日：2003-07-31
申请人： Hiroshi Hamano , Masumi Taninaka , Masaharu Nobori , Masumi Koizumi
发明人： Hiroshi Hamano , Masumi Taninaka , Masaharu Nobori , Masumi Koizumi
IPC分类号： H01L23/12 , B41J2/45 , H01L27/15 , H01L33/08 , H01L33/30 , H01L33/48 , H01L33/00 , H01L21/00
CPC分类号： H01L27/153 , B41J2/45
摘要： A light-emitting-element array has a semiconductor layer formed on a current-blocking layer. Light-emitting elements are formed in the semiconductor layer by diffusion of an impurity of a different conductive type. An isolation trench divides the semiconductor layer into a first region and a remaining region, and divides the array of light-emitting elements into segments disposed alternately in these two regions, each segment preferably including one or two light-emitting elements. A first shared interconnecting pad is electrically coupled to the light-emitting elements in the first region by electrical paths not crossing the isolation trench. A second shared interconnecting pad is electrically coupled to light-emitting elements in the remaining semiconductor region by electrical paths crossing the isolation trench. The array can then be driven by a number of separate interconnecting pads equal to half the number of the light-emitting elements.
摘要翻译：发光元件阵列具有形成在电流阻挡层上的半导体层。通过不同导电类型的杂质的扩散在半导体层中形成发光元件。隔离沟槽将半导体层划分成第一区域和剩余区域，并且将发光元件阵列分成交替布置在这两个区域中的区段，每个区段优选地包括一个或两个发光元件。第一共享互连焊盘通过不穿过隔离沟槽的电路径电耦合到第一区域中的发光元件。第二共享互连焊盘通过穿过隔离沟槽的电路径电耦合到剩余半导体区域中的发光元件。阵列然后可以由等于发光元件数量的一半的多个单独的互连焊盘驱动。

8. 发明授权

US5943586A LED array alignment mark, method and mask for forming same, and LED array alignment method 失效
公开(公告)号：US5943586A
公开(公告)日：1999-08-24
申请号：US768184
申请日：1996-12-17
申请人： Masumi Koizumi , Yukio Nakamura , Masaharu Nobori , Aya Yamanaka
发明人： Masumi Koizumi , Yukio Nakamura , Masaharu Nobori , Aya Yamanaka
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , B41J21/16 , B41J25/20 , H05K13/04 , H01L21/76
CPC分类号： H01L33/20 , B41J2/45
摘要： An alignment mark on a light-emitting diode (LED) array chip is formed together with the light-emitting areas of the diodes in the array, by use of a combined mask having a first part and a second part. An impurity is introduced through windows in the first part to form the light-emitting areas. Next the windows are covered with an etching resist, and the chip substrate is etched to create a topographic relief feature defined by the second part of the mask. This topographic relief feature is used as an alignment mark. When LED array chips having these alignment marks are mounted on a supporting surface, they are aligned by recognizing patterns of light reflected from the topographic relief, thereby detecting the positions of the alignment marks.

9. 发明授权

US07754512B2 Method of fabricating semiconductor light-emitting devices with isolation trenches 失效
标题翻译：制造具有隔离沟槽的半导体发光器件的方法
公开(公告)号：US07754512B2
公开(公告)日：2010-07-13
申请号：US11119805
申请日：2005-05-03
申请人： Masumi Taninaka , Hiroyuki Fujiwara , Susumu Ozawa , Masaharu Nobori
发明人： Masumi Taninaka , Hiroyuki Fujiwara , Susumu Ozawa , Masaharu Nobori
IPC分类号： H01L33/00 , H01L21/00 , H01L33/08
CPC分类号： B41J2/45 , H01L27/153
摘要： According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion region, then forming trenches that divide the diffusion region into multiple regions, or by forming individual diffusion regions and then forming trenches between them. The trenches prevent overlap between adjacent light-emitting elements, regardless of their junction depth, enabling a high-density array to be fabricated while maintaining adequate junction depth.
摘要翻译：根据本发明，发光半导体器件具有通过隔离沟槽分离的发光元件，优选在每个发光元件的两侧。该器件可以通过形成单个带状扩散区域，然后形成将扩散区域分成多个区域的沟槽，或者通过形成各个扩散区域，然后在它们之间形成沟槽来制造。沟槽防止相邻发光元件之间的重叠，而不管它们的结深度如何，使得能够制造高密度阵列同时保持足够的结深度。

10. 发明授权

US06765235B2 Array of semiconductor elements with paired driving scheme 有权
标题翻译：具有配对驱动方案的半导体元件阵列
公开(公告)号：US06765235B2
公开(公告)日：2004-07-20
申请号：US10373404
申请日：2003-02-25
申请人： Masumi Taninaka , Hiroyuki Fujiwara , Hiroshi Hamano , Masaharu Nobori
发明人： Masumi Taninaka , Hiroyuki Fujiwara , Hiroshi Hamano , Masaharu Nobori
IPC分类号： H01L3300
CPC分类号： H01L27/153 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has a substantially linear array of semiconductor blocks of one conductive type, each includes a diffusion region of the opposite conductive type and a electrode. The array is paralleled by an array of electrode pads, each connected to two semiconductor blocks, being connected to the diffusion region in one of the two semiconductor blocks and to the electrode in the other one of the two semiconductor blocks. The electrode pad can thus activate both semiconductor blocks, activating one semiconductor block when placed at one potential, and activating the other semiconductor block when placed at another potential. Efficient driving with a comparatively small number of electrode pads thus becomes possible.
摘要翻译：半导体器件具有一个导电类型的半导体块的基本线性阵列，每个包括相反导电类型的扩散区域和电极。该阵列由一组电极焊盘并联，每个电极焊盘连接到两个半导体块，连接到两个半导体块之一中的扩散区域和两个半导体块中的另一个中的电极。因此，电极焊盘可以激活两个半导体块，当放置在一个电位时激活一个半导体块，并且当放置在另一个电位时激活另一个半导体块。因此，可以用相对较少数量的电极垫进行有效驱动。

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