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1. 发明授权

US06717184B2 Light-emitting element array having an element separating region 有权
标题翻译：具有元件分离区域的发光元件阵列
公开(公告)号：US06717184B2
公开(公告)日：2004-04-06
申请号：US10253730
申请日：2002-09-23
申请人： Masumi Taninaka , Masaharu Nobori , Mitsuhiko Ogihara
发明人： Masumi Taninaka , Masaharu Nobori , Mitsuhiko Ogihara
IPC分类号： H01L2715
CPC分类号： H01L27/153
摘要： A light-emitting array can be driven by a matrix-type driving operation. When the packaging density of light-emitting elements is to be increased, the width of the element-separating region should be made narrower. The element-separating region extends over a considerable distance and therefore is apt to be adversely affected by particles. This tends to prevent formation of a good element-separating region, lowering manufacturing yield. An n-side electrode is arranged close to a predetermined number of LEDs. An element-separating region is formed to surround the LEDs and the n-side electrode, thereby defining a plurality of n-type semiconductor blocks. The element-separating region has a first portion that extends in a direction parallel to the line of the LEDs aligned and a second portion that extend between adjacent blocks. The first portion is wider than the second portion.
摘要翻译：发光阵列可以通过矩阵型驱动操作来驱动。当要增加发光元件的封装密度时，应使元件分离区的宽度变窄。元件分离区域延伸相当长的距离，因此容易受到颗粒的不利影响。这倾向于防止形成良好的元素分离区域，降低制造成品率。 n侧电极靠近预定数量的LED布置。形成元件分离区域以包围LED和n侧电极，从而限定多个n型半导体块。元件分离区域具有沿平行于LED对准线的方向延伸的第一部分和在相邻块之间延伸的第二部分。第一部分比第二部分宽。

2. 发明授权

US5955748A End face light emitting type light emitting diode 失效
标题翻译：端面发光型发光二极管
公开(公告)号：US5955748A
公开(公告)日：1999-09-21
申请号：US942302
申请日：1997-10-01
申请人： Yukio Nakamura , Mitsuhiko Ogihara , Masumi Taninaka , Takao Kusano , Masumi Koizumi , Hiroyuki Fujiwara , Makoto Ishimaru , Masaharu Nobori , Tsutomu Nomoto
发明人： Yukio Nakamura , Mitsuhiko Ogihara , Masumi Taninaka , Takao Kusano , Masumi Koizumi , Hiroyuki Fujiwara , Makoto Ishimaru , Masaharu Nobori , Tsutomu Nomoto
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L21/301 , H01L33/00 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/36 , H01L33/44
CPC分类号： B41J2/45 , H01L33/0008 , H01L33/20 , H01L33/44 , H01L2224/48137 , H01L33/0095
摘要： An end facet light emitting type LED has a slanted light emitting side wall relative to a substrate surface. A method for manufacturing end facet light emitting type light emitting devices prevents the pn-junction regions of the devices from being damaged while a semiconductor wafer is diced to separate light emitting devices from one another. A recess is formed on the semiconductor wafer having a depth which is deeper than the pn-junction. A portion to be cut during dicing of the wafer is vertically and horizontally separated from the pn-junction regions, so that if cracks occur when the wafer is diced, the cracks do not affect the light emitting characteristics of the devices.
摘要翻译：端面发光型LED相对于基板表面具有倾斜的发光侧壁。一种用于制造端面发光型发光器件的方法防止了在将半导体晶片切割以将发光器件彼此分离的同时，器件的pn结区域被损坏。在半导体晶片上形成有比pn结深的深度的凹部。在切割晶片期间待切割的部分与pn结区域垂直和水平分离，使得如果在切割晶片时发生裂纹，则裂纹不会影响器件的发光特性。

3. 发明授权

US06211537B1 LED array 失效
标题翻译： LED阵列
公开(公告)号：US06211537B1
公开(公告)日：2001-04-03
申请号：US09040450
申请日：1998-03-18
申请人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
发明人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
IPC分类号： H01L3300
CPC分类号： B41J2/45 , H01L27/153 , H01L33/0008
摘要： A 1200 dpi LED may be manufactured without highly accurate mask alignment and provide good light radiation efficiency. A first interlayer dielectric is formed on a semiconductor substrate and has a plurality of first windows formed therein and aligned in a row. A diffusion region is formed in the semiconductor substrate through each of the first windows. An electrode is formed to have an area in contact with the corresponding diffusion region. Another electrode is formed on the other side of the substrate. A second interlayer dielectric is formed on the first interlayer dielectric such that the second interlayer dielectric does not overlap the area of the electrode and does not extend to a first perimeter of the area.
摘要翻译：可以在没有高精度掩模对准的情况下制造1200dpi的LED，并提供良好的光辐射效率。第一层间电介质形成在半导体衬底上，并且具有形成在其中的多个第一窗口并排成一行。通过每个第一窗口在半导体衬底中形成扩散区域。电极形成为具有与相应的扩散区域接触的区域。另一电极形成在基板的另一侧。第二层间电介质形成在第一层间电介质上，使得第二层间电介质不与电极的区域重叠，并且不延伸到该区域的第一周边。

4. 发明授权

US6064418A Led array, print head, and electrophotographic printer 失效
标题翻译： LED阵列，打印头和电子照相打印机
公开(公告)号：US6064418A
公开(公告)日：2000-05-16
申请号：US57611
申请日：1998-04-09
申请人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
发明人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L27/15 , H01L33/08 , H01L33/38 , H01L33/44 , H01L33/58
CPC分类号： H01L33/0008 , B41J2/45 , H01L27/153
摘要： In an array of light-emitting diodes formed by diffusion of an impurity into a semiconductor substrate, the width of the diodes in the array direction is between four-tenths and five-tenths of the array pitch. The width of the windows above the diodes is between three-tenths and four-tenths of the array pitch. Between one-fourth and one-half of the surface area of each diode is covered by an electrode making contact with the diode through the window. The distance from the centers of the light-emitting diodes at the ends of the array to the edges of the substrate is between twenty-five and sixty-five hundredths of the array pitch.
摘要翻译：在通过将杂质扩散到半导体衬底中形成的发光二极管的阵列中，二极管在阵列方向上的宽度是阵列间距的十分之五十分之一。二极管上方的窗口的宽度在阵列间距的十分之三到四分之一之间。每个二极管的四分之一到四分之一的表面积由与二极管通过窗口接触的电极覆盖。从阵列端部的发光二极管的中心到基板的边缘的距离在阵列间距的二十五分之一到六百零五分之间。

5. 发明授权

US5972729A Method of manufacturing light-receiving/emitting diode array chip 失效
标题翻译：制造光接收/发光二极管阵列芯片的方法
公开(公告)号：US5972729A
公开(公告)日：1999-10-26
申请号：US31534
申请日：1998-02-27
申请人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
发明人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L21/301 , H01L27/15 , H01L31/10 , H01L33/08 , H01L33/30 , H01L33/44 , H01L33/48 , H01L33/00
CPC分类号： H01L27/153 , B41J2/45 , H01L33/0008 , Y10S438/975
摘要： A method of manufacturing a light-emitting or a light-receiving diode array chip. A first interlayer dielectric is formed in each of a plurality of chip areas on a substrate of a first conductivity type. Impurity diffusion regions of a second conductivity type are formed in the substrate using the first interlayer dielectric as a diffusion mask. An electrode is formed in contact with each of the impurity diffusion regions. The substrate is separated so that the plurality of chip areas are separated into individual chips. A second interlayer dielectric may be formed on the first interlayer dielectric after forming the impurity diffusion regions. The second interlayer dielectric is formed such that the second interlayer dielectric is absent from a second area along which the substrate is separated into the individual chips, at least in the vicinity of the last one of a plurality of windows. Island-shaped patterns may be formed on the interlayer dielectric so as to hold the interlayer dielectric onto the substrate. The first interlayer dielectric may be removed such that the first interlayer dielectric is absent from the second area, at least in the vicinity of the last one of the plurality of windows.
摘要翻译：一种制造发光或光接收二极管阵列芯片的方法。在第一导电类型的衬底上的多个芯片区域中的每一个中形成第一层间电介质。使用第一层间电介质作为扩散掩模，在衬底中形成第二导电类型的杂质扩散区域。形成与每个杂质扩散区接触的电极。分离基板使得多个芯片区域分离为单独的芯片。在形成杂质扩散区之后，可以在第一层间电介质上形成第二层间电介质。第二层间电介质形成为使得第二层间电介质不存在于第二区域中，至少在多个窗口中的最后一个窗口附近，基板沿着该第二区域分离成单独的芯片。可以在层间电介质上形成岛状图案，以将层间电介质保持在基板上。可以去除第一层间电介质，使得至少在多个窗口中的最后一个窗口附近，第二区域中不存在第一层间电介质。

6. 发明授权

US5869221A Method of fabricating an LED array 失效
标题翻译：制造LED阵列的方法
公开(公告)号：US5869221A
公开(公告)日：1999-02-09
申请号：US997735
申请日：1997-12-24
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
IPC分类号： H01L27/15 , G03F9/00
CPC分类号： H01L27/153
摘要： A method of fabricating an LED array includes forming a first insulating film composed of aluminum oxide on a semiconductor substrate of a first conductive type; patterning the first insulating film by photolithography to form a plurality of first windows; diffusing an impurity of a second conductive type through the plurality of first windows into the first insulating film, thereby forming a plurality of diffusion regions of the second conductive type below the plurality of first windows; forming a second insulating film on the first insulating film and the plurality of first windows; patterning the second insulating film by photolithography to-remove the second insulating film from the plurality of first windows, using an etchant that does not etch the first insulating film; forming a metal film on the second insulating film and the plurality of first windows; and patterning the metal film by photolithography to form a plurality of electrodes which make electrical contact with respective diffusion regions.
摘要翻译：制造LED阵列的方法包括在第一导电类型的半导体衬底上形成由氧化铝构成的第一绝缘膜; 通过光刻图案化第一绝缘膜以形成多个第一窗口; 将通过所述多个第一窗口的第二导电类型的杂质扩散到所述第一绝缘膜中，从而在所述多个第一窗口的下方形成所述第二导电类型的多个扩散区域; 在所述第一绝缘膜和所述多个第一窗口上形成第二绝缘膜; 使用不蚀刻第一绝缘膜的蚀刻剂通过光刻图案化第二绝缘膜以从多个第一窗口去除第二绝缘膜; 在所述第二绝缘膜和所述多个第一窗口上形成金属膜; 并通过光刻法形成金属膜以形成与各个扩散区电接触的多个电极。

7. 发明授权

US07754512B2 Method of fabricating semiconductor light-emitting devices with isolation trenches 失效
标题翻译：制造具有隔离沟槽的半导体发光器件的方法
公开(公告)号：US07754512B2
公开(公告)日：2010-07-13
申请号：US11119805
申请日：2005-05-03
申请人： Masumi Taninaka , Hiroyuki Fujiwara , Susumu Ozawa , Masaharu Nobori
发明人： Masumi Taninaka , Hiroyuki Fujiwara , Susumu Ozawa , Masaharu Nobori
IPC分类号： H01L33/00 , H01L21/00 , H01L33/08
CPC分类号： B41J2/45 , H01L27/153
摘要： According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion region, then forming trenches that divide the diffusion region into multiple regions, or by forming individual diffusion regions and then forming trenches between them. The trenches prevent overlap between adjacent light-emitting elements, regardless of their junction depth, enabling a high-density array to be fabricated while maintaining adequate junction depth.
摘要翻译：根据本发明，发光半导体器件具有通过隔离沟槽分离的发光元件，优选在每个发光元件的两侧。该器件可以通过形成单个带状扩散区域，然后形成将扩散区域分成多个区域的沟槽，或者通过形成各个扩散区域，然后在它们之间形成沟槽来制造。沟槽防止相邻发光元件之间的重叠，而不管它们的结深度如何，使得能够制造高密度阵列同时保持足够的结深度。

8. 发明授权

US06858875B2 Light-emitting-element array 有权
标题翻译：发光元件阵列
公开(公告)号：US06858875B2
公开(公告)日：2005-02-22
申请号：US10630936
申请日：2003-07-31
申请人： Hiroshi Hamano , Masumi Taninaka , Masaharu Nobori , Masumi Koizumi
发明人： Hiroshi Hamano , Masumi Taninaka , Masaharu Nobori , Masumi Koizumi
IPC分类号： H01L23/12 , B41J2/45 , H01L27/15 , H01L33/08 , H01L33/30 , H01L33/48 , H01L33/00 , H01L21/00
CPC分类号： H01L27/153 , B41J2/45
摘要： A light-emitting-element array has a semiconductor layer formed on a current-blocking layer. Light-emitting elements are formed in the semiconductor layer by diffusion of an impurity of a different conductive type. An isolation trench divides the semiconductor layer into a first region and a remaining region, and divides the array of light-emitting elements into segments disposed alternately in these two regions, each segment preferably including one or two light-emitting elements. A first shared interconnecting pad is electrically coupled to the light-emitting elements in the first region by electrical paths not crossing the isolation trench. A second shared interconnecting pad is electrically coupled to light-emitting elements in the remaining semiconductor region by electrical paths crossing the isolation trench. The array can then be driven by a number of separate interconnecting pads equal to half the number of the light-emitting elements.
摘要翻译：发光元件阵列具有形成在电流阻挡层上的半导体层。通过不同导电类型的杂质的扩散在半导体层中形成发光元件。隔离沟槽将半导体层划分成第一区域和剩余区域，并且将发光元件阵列分成交替布置在这两个区域中的区段，每个区段优选地包括一个或两个发光元件。第一共享互连焊盘通过不穿过隔离沟槽的电路径电耦合到第一区域中的发光元件。第二共享互连焊盘通过穿过隔离沟槽的电路径电耦合到剩余半导体区域中的发光元件。阵列然后可以由等于发光元件数量的一半的多个单独的互连焊盘驱动。

9. 发明授权

US06563138B2 Low-cost, high-density light-emitting-diode array and fabrication method thereof 有权
标题翻译：低成本，高密度发光二极管阵列及其制造方法
公开(公告)号：US06563138B2
公开(公告)日：2003-05-13
申请号：US09750299
申请日：2000-12-29
申请人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
发明人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
IPC分类号： H01L3300
CPC分类号： H01L27/153
摘要： A light-emitting-diode array is formed on a substrate having an upper layer of a semiconducting material and a lower layer of an insulating or semi-insulating material. The upper layer is divided into blocks by isolation channels that cut completely through the upper layer. The light-emitting diodes, which are formed by selective diffusion of an impurity into the upper layer, are arranged in a single row, with at least two light-emitting diodes in each block of the upper layer. Each block has a block electrode that drives the light-emitting diodes in the block. The row of light-emitting diodes is paralleled by a number of shared lines which cross the isolation channels. Each shared line is coupled to a plurality of light-emitting diodes in different blocks.
摘要翻译：在具有半导体材料的上层和绝缘或半绝缘材料的下层的基板上形成发光二极管阵列。上层通过完全穿过上层的隔离通道分成块。通过将杂质选择性地扩散到上层中而形成的发光二极管以单列排列，在上层的每个块中至少有两个发光二极管。每个块具有驱动块中的发光二极管的块电极。这排发光二极管与穿过隔离通道的多条共用线并联。每个共享线路连接到不同块中的多个发光二极管。

10. 发明授权

US06222208B1 Light-emitting diode and light-emitting diode array 失效
标题翻译：发光二极管和发光二极管阵列
公开(公告)号：US06222208B1
公开(公告)日：2001-04-24
申请号：US09089093
申请日：1998-06-02
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
IPC分类号： H01L3300
CPC分类号： H01L33/30 , H01L27/153 , H01L33/025 , H01L33/24
摘要： A light-emitting diode includes a first semiconductor epitaxial layer of a first conduction type, a second semiconductor epitaxial layer of the first conduction type laminated upon the first semiconductor epitaxial layer and having an energy band gap greater than that of the first semiconductor epitaxial layer, and an area of impurities formed within the first semiconductor epitaxial layer and the second semiconductor epitaxial layer by doping impurity of a second conduction type from the side of the second semiconductor epitaxial layer. A front of the diode is located within the first semiconductor epitaxial layer.
摘要翻译：发光二极管包括第一导电类型的第一半导体外延层，第一导电类型的第二半导体外延层，层压在第一半导体外延层上并具有大于第一半导体外延层的能带隙的能带隙，以及通过从第二半导体外延层的侧面掺杂第二导电类型的杂质而形成在第一半导体外延层和第二半导体外延层内的杂质区域。二极管的前部位于第一半导体外延层内。

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