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1. 发明申请

US20080063975A1 Polymer, Positive Resist Composition and Method for Forming Resist Pattern 有权
标题翻译：聚合物，正电阻组合物和形成抗蚀剂图案的方法
公开(公告)号：US20080063975A1
公开(公告)日：2008-03-13
申请号：US11628172
申请日：2005-06-02
申请人： Masaru Takeshita , Hideo Hada , Ryotaro Hayashi , Takeshi Iwai , Syogo Matsumaru , Satoshi Fujimura
发明人： Masaru Takeshita , Hideo Hada , Ryotaro Hayashi , Takeshi Iwai , Syogo Matsumaru , Satoshi Fujimura
IPC分类号： C08G63/08 , G03F1/00 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： A polymer, a positive resist composition, and a method for forming a resist pattern that are able to form a resist pattern with a high level of resolution and excellent etching resistance. The present invention uses a polymer that contains a structural unit (a1) represented by a general formula (a-1) shown below and a structural unit (a2) represented by a general formula (a-2) shown below, another polymer that contains the structural unit (a1) and a structural unit (a3) represented by a general formula (a-3) shown below, and another polymer that contains the structural unit (a1), the structural unit (a2), and the structural unit (a3).
摘要翻译：聚合物，正性抗蚀剂组合物和形成能够以高分辨率和优异耐蚀刻性形成抗蚀剂图案的抗蚀剂图案的方法。本发明使用含有下述通式（a-1）表示的结构单元（a1）和下述通式（a-2）表示的结构单元（a2）的聚合物，该聚合物含有结构单元（a1）和由下述通式（a-3）表示的结构单元（a3）和含有结构单元（a1），结构单元（a2）和结构单元（ a3）。

2. 发明授权

US07763412B2 Polymer, positive resist composition and method for forming resist pattern 有权
标题翻译：聚合物，正性抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07763412B2
公开(公告)日：2010-07-27
申请号：US11628172
申请日：2005-06-02
申请人： Masaru Takeshita , Hideo Hada , Ryotaro Hayashi , Takeshi Iwai , Syogo Matsumaru , Satoshi Fujimura
发明人： Masaru Takeshita , Hideo Hada , Ryotaro Hayashi , Takeshi Iwai , Syogo Matsumaru , Satoshi Fujimura
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： A polymer, a positive resist composition, and a method for forming a resist pattern that are able to form a resist pattern with a high level of resolution and excellent etching resistance. The present invention uses a polymer that contains a structural unit (a1) represented by a general formula (a-1) shown below and a structural unit (a2) represented by a general formula (a-2) shown below, another polymer that contains the structural unit (a1) and a structural unit (a3) represented by a general formula (a-3) shown below, and another polymer that contains the structural unit (a1), the structural unit (a2), and the structural unit (a3).
摘要翻译：聚合物，正性抗蚀剂组合物和形成能够以高分辨率和优异耐蚀刻性形成抗蚀剂图案的抗蚀剂图案的方法。本发明使用含有下述通式（a-1）表示的结构单元（a1）和下述通式（a-2）表示的结构单元（a2）的聚合物，该聚合物含有结构单元（a1）和由下述通式（a-3）表示的结构单元（a3）和含有结构单元（a1）的另一种聚合物，结构单元（a2）和结构单元 a3）。

3. 发明授权

US07682770B2 Resist composition and method for forming resist pattern 有权
标题翻译：抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07682770B2
公开(公告)日：2010-03-23
申请号：US10576405
申请日：2004-10-20
申请人： Hideo Hada , Masaru Takeshita , Ryotaro Hayashi , Syogo Matsumaru , Taku Hirayama , Hiroaki Shimizu
发明人： Hideo Hada , Masaru Takeshita , Ryotaro Hayashi , Syogo Matsumaru , Taku Hirayama , Hiroaki Shimizu
IPC分类号： G03F7/039 , G03F7/028
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/122
摘要： A resist composition is provided that yields fine resolution, and improved levels of line edge roughness and depth of focus. This composition includes a resin component (A) that undergoes a change in alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) is a resin with a weight average molecular weight of no more than 8,000 containing structural units (a) derived from a (meth)acrylate ester, and the component (B) includes at least one sulfonium compound represented by a general formula (b-1) or a general formula (b-2) shown below.
摘要翻译：提供了抗蚀剂组合物，其产生精细的分辨率，并且改善了线边缘粗糙度和聚焦深度的水平。该组合物包含在酸作用下发生碱溶解性变化的树脂成分（A）和暴露时产生酸的酸发生剂成分（B），其中，成分（A）为重均分子量由（甲基）丙烯酸酯衍生的含有结构单元（a）的重量不大于8,000，组分（B）包括至少一种由通式（b-1）或通式（b- 2）如下所示。

4. 发明申请

US20070275307A1 Resist Composition and Method for Forming Resist Pattern 有权
标题翻译：抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20070275307A1
公开(公告)日：2007-11-29
申请号：US10576405
申请日：2004-10-20
申请人： Hideo Hada , Masaru Takeshita , Ryotaro Hayashi , Syogo Matsumaru , Taku Hirayama , Hiroaki Shimizu
发明人： Hideo Hada , Masaru Takeshita , Ryotaro Hayashi , Syogo Matsumaru , Taku Hirayama , Hiroaki Shimizu
IPC分类号： H01L21/027 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/122
摘要： A resist composition is provided that yields fine resolution, and improved levels of line edge roughness and depth of focus. This composition includes a resin component (A) that undergoes a change in alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) is a resin with a weight average molecular weight of no more than 8,000 containing structural units (a) derived from a (meth)acrylate ester, and the component (B) includes at least one sulfonium compound represented by a general formula (b-1) or a general formula (b-2) shown below.
摘要翻译：提供了抗蚀剂组合物，其产生精细的分辨率，并且改善了线边缘粗糙度和聚焦深度的水平。该组合物包含在酸作用下发生碱溶解性变化的树脂成分（A）和暴露时产生酸的酸发生剂成分（B），其中，成分（A）为重均分子量由（甲基）丙烯酸酯衍生的含有结构单元（a）的重量不大于8,000，组分（B）包括至少一种由通式（b-1）或通式（b- 2）如下所示。

5. 发明申请

US20060141384A1 Process for refining crude resin for electronic material 有权
标题翻译：电解材料粗树脂精制工艺
公开(公告)号：US20060141384A1
公开(公告)日：2006-06-29
申请号：US10543263
申请日：2004-01-28
申请人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
发明人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
IPC分类号： G03C1/76
CPC分类号： C08J3/14 , C08J2333/04 , G03F7/0397
摘要： A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (a1) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.
摘要翻译：提供了一种方法，用于有效地除去副产物，例如包含在用于电子材料的粗树脂中的低聚物，从而制备用于电子材料的树脂。在该方法中，使用（b1）能够将所述粗树脂溶解在电子材料中的有机溶剂洗涤含有（a1）衍生自具有亲水部位的（甲基）丙烯酸酯的结构单元的电子材料用粗制树脂当与水结合时分离成两层，（b2）水。

6. 发明授权

US07312015B2 Process for refining crude resin for electronic material 有权
标题翻译：电解材料粗树脂精制工艺
公开(公告)号：US07312015B2
公开(公告)日：2007-12-25
申请号：US10543263
申请日：2004-01-28
申请人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
发明人： Hideo Hada , Takeshi Iwai , Masaru Takeshita , Ryotaro Hayashi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Kazuyuki Shiotani
IPC分类号： G03C1/76 , G03C1/492 , G03C1/494 , C08F6/00 , C08J3/00
CPC分类号： C08J3/14 , C08J2333/04 , G03F7/0397
摘要： A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (a1) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.
摘要翻译：提供了一种方法，用于有效地除去副产物，例如包含在用于电子材料的粗树脂中的低聚物，从而制备用于电子材料的树脂。在该方法中，使用（b1）能够将所述粗树脂溶解在电子材料中的有机溶剂洗涤含有（a1）衍生自具有亲水部位的（甲基）丙烯酸酯的结构单元的电子材料用粗制树脂当与水结合时分离成两层，（b2）水。

7. 发明申请

US20060183876A1 Resin for resist positive resist composition and method of forming resist pattern 审中-公开
标题翻译：用于抗蚀剂正性抗蚀剂组合物的树脂和形成抗蚀剂图案的方法
公开(公告)号：US20060183876A1
公开(公告)日：2006-08-17
申请号：US10565696
申请日：2004-08-10
申请人： Ryotaro Hayashi , Hideo Hada , Takeshi Iwai
发明人： Ryotaro Hayashi , Hideo Hada , Takeshi Iwai
IPC分类号： C08F118/02
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28
摘要： A positive resist composition that exhibits excellent resolution and depth of focus, a resin for resists which is used in the positive resist composition, and a method of forming a resist pattern that uses the positive resist composition. The resin for resists includes structural units (a) derived from an (α-lower alkyl)acrylate ester as a principal component, wherein these structural units (a) include structural units (a1) derived from an (α-lower alkyl)acrylate ester containing an acid dissociable, dissolution inhibiting group, and lactone-containing monocyclic groups, and the structural units (a1) include structural units represented by the general formula (a1-1) shown below [wherein, R represents a hydrogen atom or a lower alkyl group, and R11 represents an acid dissociable, dissolution inhibiting group that contains a monocyclic aliphatic hydrocarbon group and contains no polycyclic aliphatic hydrocarbon groups].
摘要翻译：表现出优异的分辨率和深度聚焦的正性抗蚀剂组合物，用于正性抗蚀剂组合物中的抗蚀剂树脂以及形成使用正性抗蚀剂组合物的抗蚀剂图案的方法。用于抗蚀剂的树脂包括衍生自（α-低级烷基）丙烯酸酯作为主要成分的结构单元（a），其中这些结构单元（a）包括衍生自（α-低级烷基）丙烯酸酯的结构单元（a1）含有酸解离性溶解抑制基团和含内酯单环基团，结构单元（a1）包括由下述通式（a1-1）表示的结构单元[其中，R表示氢原子或低级烷基基团，R 11表示含有单环脂族烃基且不含多环脂族烃基的酸解离性溶解抑制基团]。

8. 发明授权

US07575846B2 Resist polymer and resist composition 有权
标题翻译：抗聚合物和抗蚀剂组成
公开(公告)号：US07575846B2
公开(公告)日：2009-08-18
申请号：US10543914
申请日：2004-01-29
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03C1/73 , G03F7/039 , C08F120/70 , C08F24/00
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要翻译：本发明的抗蚀剂聚合物包含具有氰基的特定结构单元，具有酸解离基的结构单元和具有内酯骨架的特定结构单元。当在DUV准分子激光光刻或电子束光刻中使用上述聚合物作为抗蚀剂树脂时，其表现出高灵敏度和高分辨率，并且提供良好的抗蚀剂图案形状，线边缘粗糙度的发生程度小或微凝胶的产生。

9. 发明授权

US08580481B2 Resist polymer and resist composition 有权
公开(公告)号：US08580481B2
公开(公告)日：2013-11-12
申请号：US13242879
申请日：2011-09-23
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.

10. 发明授权

US08092979B2 Resist polymer and resist composition 有权
标题翻译：抗聚合物和抗蚀剂组成
公开(公告)号：US08092979B2
公开(公告)日：2012-01-10
申请号：US12496232
申请日：2009-07-01
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03F7/039 , C08F222/14 , C08F222/20 , C08F222/22
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要翻译：本发明的抗蚀剂聚合物包含具有氰基的特定结构单元，具有酸解离基的结构单元和具有内酯骨架的特定结构单元。当在DUV准分子激光光刻或电子束光刻中使用上述聚合物作为抗蚀剂树脂时，其表现出高灵敏度和高分辨率，并且提供良好的抗蚀剂图案形状，线边缘粗糙度的发生程度小或微凝胶的产生。

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