专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08614283B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer 有权
标题翻译：抗蚀剂聚合物，抗蚀剂组合物，图案形成方法和用于生产抗蚀剂聚合物的起始化合物
公开(公告)号：US08614283B2
公开(公告)日：2013-12-24
申请号：US13032299
申请日：2011-02-22
申请人： Hikaru Momose , Atsushi Ootake , Tadashi Nakamura , Akifumi Ueda
发明人： Hikaru Momose , Atsushi Ootake , Tadashi Nakamura , Akifumi Ueda
IPC分类号： C08F22/14 , C08F22/20 , C08F220/68 , C08F220/18 , C08F220/28
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F222/1006
摘要： To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R1 represents H or a methyl group.
摘要翻译：提供一种抗蚀剂聚合物，其包含作为结构单元的具有由式（1）或（2）表示的结构的酸可分解单元，其具有小的线边缘粗糙度，并且在DUV准分子激光光刻技术中几乎没有缺陷。在式（1）和（2）中，n表示2〜24的整数，当n = 2时，J表示单键或可以具有取代基/杂原子的二价烃基，或当n> = 3时，表示可以具有取代基/杂原子的n价烃基; E表示聚合终止剂，链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基，亚环烷基，氧化烯，亚芳基，二价噻唑啉环，二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C（O）O - ， - C（O） - 和-OC（O） - 的至少一种; M1，M2和M3各自表示选自亚烷基，亚环烷基，氧化烯和亚芳基中的至少一种; Y，Y 1和Y 2各自表示酸分解键; k1，k2，l1，l2，m1，m2，m3各自表示0或1; R1表示H或甲基。

2. 发明授权

US08580481B2 Resist polymer and resist composition 有权
公开(公告)号：US08580481B2
公开(公告)日：2013-11-12
申请号：US13242879
申请日：2011-09-23
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.

3. 发明授权

US08092979B2 Resist polymer and resist composition 有权
标题翻译：抗聚合物和抗蚀剂组成
公开(公告)号：US08092979B2
公开(公告)日：2012-01-10
申请号：US12496232
申请日：2009-07-01
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03F7/039 , C08F222/14 , C08F222/20 , C08F222/22
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要翻译：本发明的抗蚀剂聚合物包含具有氰基的特定结构单元，具有酸解离基的结构单元和具有内酯骨架的特定结构单元。当在DUV准分子激光光刻或电子束光刻中使用上述聚合物作为抗蚀剂树脂时，其表现出高灵敏度和高分辨率，并且提供良好的抗蚀剂图案形状，线边缘粗糙度的发生程度小或微凝胶的产生。

4. 发明授权

US08049042B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer 有权
标题翻译：抗蚀剂聚合物，抗蚀剂组合物，图案形成方法和用于生产抗蚀剂聚合物的起始化合物
公开(公告)号：US08049042B2
公开(公告)日：2011-11-01
申请号：US12411703
申请日：2009-03-26
申请人： Hikaru Momose , Atsushi Ootake , Tadashi Nakamura , Akifumi Ueda
发明人： Hikaru Momose , Atsushi Ootake , Tadashi Nakamura , Akifumi Ueda
IPC分类号： C07C321/02 , C07C321/26 , C07C31/18 , C07C19/075 , C07D221/00
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F222/1006
摘要： To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R1 represents H or a methyl group.
摘要翻译：提供一种抗蚀剂聚合物，其包含作为结构单元的具有由式（1）或（2）表示的结构的酸可分解单元，其具有小的线边缘粗糙度，并且在DUV准分子激光光刻技术中几乎没有缺陷。在式（1）和（2）中，n表示2〜24的整数，当n = 2时，J表示单键或可以具有取代基/杂原子的二价烃基，或表示当n≥3时可具有取代基/杂原子的n价烃基; E表示聚合终止剂，链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基，亚环烷基，氧化烯，亚芳基，二价噻唑啉环，二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C（O）O - ， - C（O） - 和-OC（O） - 的至少一种; M1，M2和M3各自表示选自亚烷基，亚环烷基，氧化烯和亚芳基中的至少一种; Y，Y 1和Y 2各自表示酸分解键; k1，k2，l1，l2，m1，m2，m3各自表示0或1; R1表示H或甲基。

5. 发明申请

US20110144295A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER 有权
标题翻译：耐腐蚀聚合物，耐腐蚀组合物，形成图案的方法和起始化合物用于生产耐候聚合物
公开(公告)号：US20110144295A1
公开(公告)日：2011-06-16
申请号：US13032299
申请日：2011-02-22
申请人： Hikaru Momose , Atsushi Ootake , Tadashi Nakamura , Akifumi Ueda
发明人： Hikaru Momose , Atsushi Ootake , Tadashi Nakamura , Akifumi Ueda
IPC分类号： C08F220/28 , C08F220/18 , C08F220/42
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F222/1006
摘要： To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R1 represents H or a methyl group.
摘要翻译：提供一种抗蚀剂聚合物，其包含作为结构单元的具有由式（1）或（2）表示的结构的酸可分解单元，其具有小的线边缘粗糙度，并且在DUV准分子激光光刻技术中几乎没有缺陷。在式（1）和（2）中，n表示2〜24的整数，当n = 2时，J表示单键或可以具有取代基/杂原子的二价烃基，或表示当n≥3时可具有取代基/杂原子的n价烃基; E表示聚合终止剂，链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基，亚环烷基，氧化烯，亚芳基，二价噻唑啉环，二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C（O）O - ， - C（O） - 和-OC（O） - 的至少一种; M1，M2和M3各自表示选自亚烷基，亚环烷基，氧化烯和亚芳基中的至少一种; Y，Y 1和Y 2各自表示酸分解键; k1，k2，l1，l2，m1，m2，m3各自表示0或1; R1表示H或甲基。

6. 发明申请

US20090263743A1 RESIST POLYMER AND RESIST COMPOSITION 有权
标题翻译：耐聚合物和耐腐蚀组合物
公开(公告)号：US20090263743A1
公开(公告)日：2009-10-22
申请号：US12496232
申请日：2009-07-01
申请人： Hikaru MOMOSE , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru MOMOSE , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03F7/20 , C08F24/00 , C08F10/00 , G03F7/004
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要翻译：本发明的抗蚀剂聚合物包含具有氰基的特定结构单元，具有酸解离基的结构单元和具有内酯骨架的特定结构单元。当在DUV准分子激光光刻或电子束光刻中使用上述聚合物作为抗蚀剂树脂时，其表现出高灵敏度和高分辨率，并且提供良好的抗蚀剂图案形状，线边缘粗糙度的发生程度小或微凝胶的产生。

7. 发明申请

US20060127801A1 Resist polymer and resist composition 有权
公开(公告)号：US20060127801A1
公开(公告)日：2006-06-15
申请号：US10543914
申请日：2004-01-29
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Kayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Kayashi , Takeshi Iwai
IPC分类号： G03C1/76
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.

8. 发明申请

US20130224654A1 COPOLYMERS FOR LITHOGRAPHY AND METHOD FOR PRODUCING SAME, RESIST COMPOSITION, METHOD FOR PRODUCING SUBSTRATE WITH PATTERN FORMED THEREUPON, METHOD FOR EVALUATING COPOLYMERS, AND METHOD FOR ANALYZING COPOLYMER COMPOSITIONS 有权
标题翻译：用于制备它的共聚物及其制备方法，耐蚀组合物，用于形成图案的基板的生产方法，用于评价共聚物的方法和分析共聚物组合物的方法
公开(公告)号：US20130224654A1
公开(公告)日：2013-08-29
申请号：US13879737
申请日：2011-10-14
申请人： Atsushi Yasuda , Tomoya Oshikiri , Hikaru Momose
发明人： Atsushi Yasuda , Tomoya Oshikiri , Hikaru Momose
IPC分类号： G03F7/004
CPC分类号： G03F7/004 , C08F2/00 , C08F120/28 , C08F220/18 , C08F220/20 , C08F220/28 , C08F2220/283 , C08F2400/02 , G01N24/085 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/20
摘要： A target variable analysis unit (11) calculates the triad fractions of monomer units in the composition of a known polymer sample from the copolymerization reactivity ratios of the monomer units to obtain a target variable. A waveform processing unit (12) processes NMR measurements, signals, etc. An explanatory variable analysis unit (13) obtains explanatory variables from the amount of chemical shift and signal strength in the NMR measurements of the known sample. A model generation unit (14) determines the regression equation of the regression model of the target variable and the explanatory variables by partial least squares regression, and obtains regression model coefficients. A sample analysis unit (15) uses the regression model to calculate the triad fractions for an unknown copolymer sample from the amount of chemical shift and signal strength in the NMR measurements of the unknown copolymer sample. By using a copolymer for lithography in which the total of the triad fractions obtained in this way is not more than 20 mole % in the copolymer, a resist composition with excellent solubility and sensitivity can be manufactured.
摘要翻译：目标可变分析单元（11）根据单体单元的共聚反应性比率计算已知聚合物样品的组成中单体单元的三单元组分数，以获得目标变量。波形处理单元（12）处理NMR测量，信号等。解释变量分析单元（13）从已知样本的NMR测量中的化学位移和信号强度的量中获得解释变量。模型生成单元（14）通过偏最小二乘回归确定目标变量回归模型的回归方程和解释变量，得到回归模型系数。样品分析单元（15）使用回归模型从未知共聚物样品的NMR测量中的化学位移和信号强度的量来计算未知共聚物样品的三单元组分数。通过使用共聚物，其中在共聚物中以这种方式获得的三单元组分数的总和不超过20摩尔％，可以制造出具有优异的溶解度和灵敏度的抗蚀剂组合物。

9. 发明授权

US08241829B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer 有权
标题翻译：抗蚀剂聚合物，抗蚀剂组合物，图案形成方法和用于生产抗蚀剂聚合物的起始化合物
公开(公告)号：US08241829B2
公开(公告)日：2012-08-14
申请号：US10592057
申请日：2005-03-08
申请人： Hikaru Momose , Atsushi Ootake , Tadashi Nakamura , Akifumi Ueda
发明人： Hikaru Momose , Atsushi Ootake , Tadashi Nakamura , Akifumi Ueda
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F222/1006
摘要： To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, m3 and n1 each represent 0 or 1; and R1 represents H or a methyl group.
摘要翻译：提供一种抗蚀剂聚合物，其包含作为结构单元的具有由式（1）或（2）表示的结构的酸可分解单元，其具有小的线边缘粗糙度，并且在DUV准分子激光光刻技术中几乎没有缺陷。在式（1）和（2）中，n表示2〜24的整数，当n = 2时，J表示单键或可以具有取代基/杂原子的二价烃基，或表示当n≥3时可具有取代基/杂原子的n价烃基; E表示聚合终止剂，链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基，亚环烷基，氧化烯，亚芳基，二价噻唑啉环，二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C（O）O - ， - C（O） - 和-OC（O） - 的至少一种; M1，M2和M3各自表示选自亚烷基，亚环烷基，氧化烯和亚芳基中的至少一种; Y，Y 1和Y 2各自表示酸分解键; k1，k2，l1，l2，m1，m2，m3和n1各自表示0或1; R1表示H或甲基。

10. 发明申请

US20120034561A1 RESIST POLYMER AND RESIST COMPOSITION 有权
标题翻译：耐聚合物和耐腐蚀组合物
公开(公告)号：US20120034561A1
公开(公告)日：2012-02-09
申请号：US13242879
申请日：2011-09-23
申请人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
发明人： Hikaru Momose , Atsushi Ootake , Akifumi Ueda , Tadayuki Fujiwara , Masaru Takeshita , Ryotaro Hayashi , Takeshi Iwai
IPC分类号： G03F7/20 , C08F224/00 , G03F7/004
CPC分类号： C08F220/28 , G03F7/0397 , Y10S430/111
摘要： The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要翻译：本发明的抗蚀剂聚合物包含具有氰基的特定结构单元，具有酸解离基的结构单元和具有内酯骨架的特定结构单元。当在DUV准分子激光光刻或电子束光刻中使用上述聚合物作为抗蚀剂树脂时，其表现出高灵敏度和高分辨率，并且提供良好的抗蚀剂图案形状，线边缘粗糙度的发生程度小或微凝胶的产生。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式