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    • 1. 发明授权
    • Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer
    • 抗蚀剂聚合物,抗蚀剂组合物,图案形成方法和用于生产抗蚀剂聚合物的起始化合物
    • US08614283B2
    • 2013-12-24
    • US13032299
    • 2011-02-22
    • Hikaru MomoseAtsushi OotakeTadashi NakamuraAkifumi Ueda
    • Hikaru MomoseAtsushi OotakeTadashi NakamuraAkifumi Ueda
    • C08F22/14C08F22/20C08F220/68C08F220/18C08F220/28
    • G03F7/0397C08F220/18C08F220/28C08F222/1006
    • To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R1 represents H or a methyl group.
    • 提供一种抗蚀剂聚合物,其包含作为结构单元的具有由式(1)或(2)表示的结构的酸可分解单元,其具有小的线边缘粗糙度,并且在DUV准分子激光光刻技术中几乎没有缺陷。 在式(1)和(2)中,n表示2〜24的整数, 当n = 2时,J表示单键或可以具有取代基/杂原子的二价烃基,或当n> = 3时,表示可以具有取代基/杂原子的n价烃基; E表示聚合终止剂,链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基,亚环烷基,氧化烯,亚芳基,二价噻唑啉环,二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C(O)O - , - C(O) - 和-OC(O) - 的至少一种; M1,M2和M3各自表示选自亚烷基,亚环烷基,氧化烯和亚芳基中的至少一种; Y,Y 1和Y 2各自表示酸分解键; k1,k2,l1,l2,m1,m2,m3各自表示0或1; R1表示H或甲基。
    • 4. 发明授权
    • Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer
    • 抗蚀剂聚合物,抗蚀剂组合物,图案形成方法和用于生产抗蚀剂聚合物的起始化合物
    • US08049042B2
    • 2011-11-01
    • US12411703
    • 2009-03-26
    • Hikaru MomoseAtsushi OotakeTadashi NakamuraAkifumi Ueda
    • Hikaru MomoseAtsushi OotakeTadashi NakamuraAkifumi Ueda
    • C07C321/02C07C321/26C07C31/18C07C19/075C07D221/00
    • G03F7/0397C08F220/18C08F220/28C08F222/1006
    • To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R1 represents H or a methyl group.
    • 提供一种抗蚀剂聚合物,其包含作为结构单元的具有由式(1)或(2)表示的结构的酸可分解单元,其具有小的线边缘粗糙度,并且在DUV准分子激光光刻技术中几乎没有缺陷。 在式(1)和(2)中,n表示2〜24的整数, 当n = 2时,J表示单键或可以具有取代基/杂原子的二价烃基,或表示当n≥3时可具有取代基/杂原子的n价烃基; E表示聚合终止剂,链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基,亚环烷基,氧化烯,亚芳基,二价噻唑啉环,二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C(O)O - , - C(O) - 和-OC(O) - 的至少一种; M1,M2和M3各自表示选自亚烷基,亚环烷基,氧化烯和亚芳基中的至少一种; Y,Y 1和Y 2各自表示酸分解键; k1,k2,l1,l2,m1,m2,m3各自表示0或1; R1表示H或甲基。
    • 5. 发明申请
    • RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER
    • 耐腐蚀聚合物,耐腐蚀组合物,形成图案的方法和起始化合物用于生产耐候聚合物
    • US20110144295A1
    • 2011-06-16
    • US13032299
    • 2011-02-22
    • Hikaru MomoseAtsushi OotakeTadashi NakamuraAkifumi Ueda
    • Hikaru MomoseAtsushi OotakeTadashi NakamuraAkifumi Ueda
    • C08F220/28C08F220/18C08F220/42
    • G03F7/0397C08F220/18C08F220/28C08F222/1006
    • To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R1 represents H or a methyl group.
    • 提供一种抗蚀剂聚合物,其包含作为结构单元的具有由式(1)或(2)表示的结构的酸可分解单元,其具有小的线边缘粗糙度,并且在DUV准分子激光光刻技术中几乎没有缺陷。 在式(1)和(2)中,n表示2〜24的整数, 当n = 2时,J表示单键或可以具有取代基/杂原子的二价烃基,或表示当n≥3时可具有取代基/杂原子的n价烃基; E表示聚合终止剂,链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基,亚环烷基,氧化烯,亚芳基,二价噻唑啉环,二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C(O)O - , - C(O) - 和-OC(O) - 的至少一种; M1,M2和M3各自表示选自亚烷基,亚环烷基,氧化烯和亚芳基中的至少一种; Y,Y 1和Y 2各自表示酸分解键; k1,k2,l1,l2,m1,m2,m3各自表示0或1; R1表示H或甲基。
    • 9. 发明授权
    • Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer
    • 抗蚀剂聚合物,抗蚀剂组合物,图案形成方法和用于生产抗蚀剂聚合物的起始化合物
    • US08241829B2
    • 2012-08-14
    • US10592057
    • 2005-03-08
    • Hikaru MomoseAtsushi OotakeTadashi NakamuraAkifumi Ueda
    • Hikaru MomoseAtsushi OotakeTadashi NakamuraAkifumi Ueda
    • G03F7/039G03F7/20G03F7/30
    • G03F7/0397C08F220/18C08F220/28C08F222/1006
    • To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, m3 and n1 each represent 0 or 1; and R1 represents H or a methyl group.
    • 提供一种抗蚀剂聚合物,其包含作为结构单元的具有由式(1)或(2)表示的结构的酸可分解单元,其具有小的线边缘粗糙度,并且在DUV准分子激光光刻技术中几乎没有缺陷。 在式(1)和(2)中,n表示2〜24的整数, 当n = 2时,J表示单键或可以具有取代基/杂原子的二价烃基,或表示当n≥3时可具有取代基/杂原子的n价烃基; E表示聚合终止剂,链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基,亚环烷基,氧化烯,亚芳基,二价噻唑啉环,二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C(O)O - , - C(O) - 和-OC(O) - 的至少一种; M1,M2和M3各自表示选自亚烷基,亚环烷基,氧化烯和亚芳基中的至少一种; Y,Y 1和Y 2各自表示酸分解键; k1,k2,l1,l2,m1,m2,m3和n1各自表示0或1; R1表示H或甲基。