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1. 发明授权

US5556461A Method for producing a silicon single crystal by a float-zone method 失效
标题翻译：通过浮法法生产硅单晶的方法
公开(公告)号：US5556461A
公开(公告)日：1996-09-17
申请号：US260919
申请日：1994-06-15
申请人： Masanori Kimura , Hirotoshi Yamagishi
发明人： Masanori Kimura , Hirotoshi Yamagishi
IPC分类号： C30B13/30 , C30B13/00 , C30B13/26 , C30B29/06 , H01L21/208 , C30B13/02
CPC分类号： C30B29/06 , C30B13/26 , Y10T117/10 , Y10T117/1016
摘要： A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 .mu.m; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 1000 gauss to the molten zone; and passing the molten zone through the length of the polysilicon rod thereby the polysilicon rod is converted into a silicon single crystal ingot through a one-pass zoning of the floating zone method. An apparatus for reducing the method into practice is also described.
摘要翻译：一种通过浮区法制造单晶硅的方法，包括以下步骤：提供平均晶粒长度为10-1000μm的多晶硅棒; 加热多晶硅棒的一部分以形成熔融区，同时向熔融区施加300至1000高斯的磁场; 并且使熔融区域通过多晶硅棒的长度，从而通过浮动区域方法的一次通过区域将多晶硅棒转变成硅单晶锭。还描述了一种用于将方法减少到实践中的装置。

2. 发明授权

US5735951A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5735951A
公开(公告)日：1998-04-07
申请号：US673590
申请日：1996-07-01
申请人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Koji Mizuishi , Hirotoshi Yamagishi
发明人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Koji Mizuishi , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/00 , C30B15/14 , Y10S117/90 , Y10T117/1032 , Y10T117/1068
摘要： A single crystal pulling apparatus which eliminates trouble caused by an isolation valve heated to a high temperature uses a heat insulation plate provided below the isolation valve. The heat insulation plate is operated synchronously with the opening or closing of the isolation valve. The heat insulation plate prevents hot gases from coming from the lower chamber from coming into direct contact with the isolation valve. The prevention of overheating of the isolation valve provides for smooth operation and growth of a good quality single crystal.
摘要翻译：消除由加热到高温的隔离阀引起的麻烦的单晶拉制装置使用设置在隔离阀下方的隔热板。绝热板与隔离阀的打开或关闭同步运行。隔热板防止来自下部室的热气体与隔离阀直接接触。防止隔离阀过热，提供良好的单晶的平稳运行和生长。

3. 发明授权

US5980630A Manufacturing method of single crystal and apparatus of manufacturing the same 失效
标题翻译：单晶的制造方法及其制造方法
公开(公告)号：US5980630A
公开(公告)日：1999-11-09
申请号：US81665
申请日：1998-05-20
申请人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Hirotoshi Yamagishi
发明人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/20 , C30B15/30 , C30B29/06 , C30B30/04 , C30B35/00
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1068
摘要： In a single crystal manufacturing method by a horizontal magnetic field applied CZ method wherein coils are disposed interposing a crucible coaxially with each other, the coils constituting superconductive electromagnets of a magnetic field application apparatus and the silicon crystal is pulled from melt in the crucible while applying a horizontal magnetic field to the melt; an elavation apparatus capable of finely adjusting relative positions of the superconductive electromagnets and the crcucible in a vertical direction is disposed. The descent of a central portion Cm in a depth direction of the melt is canceled by elevating the crucible with the elevating apparatus, the descent being accompanied with proceeding of process of pulling the single crystal, thereby a coil central axis Cc of the superconductive electromagnets always passes through the central portion Cm or below this portion. Compared with the conventional HMCZ method, an uniformity of an intensity distribution of the magnetic field applied to the melt is increased so that a suppression effect on the melt convection all over the crucible is enhanced.
摘要翻译：在通过水平磁场施加的CZ方法的单晶制造方法中，其中线圈彼此同轴地布置坩埚，构成磁场施加装置的超导电磁体的线圈和硅晶体在施加时从坩埚中的熔体拉出熔体的水平磁场; 设置能够精细地调整超导电磁体和坩埚在垂直方向上的相对位置的冲压装置。通过用升降装置升高坩埚来消除熔体深度方向上的中心部分Cm的下降，伴随着牵引单晶的过程的下降，超导电磁体的线圈中心轴Cc总是通过中心部分Cm或者低于该部分。与传统的HMCZ方法相比，施加到熔体的磁场的强度分布的均匀性增加，从而增强了对整个坩埚的熔体对流的抑制效果。

4. 发明授权

US5785758A Single crystal growing apparatus 失效
标题翻译：单晶生长装置
公开(公告)号：US5785758A
公开(公告)日：1998-07-28
申请号：US777670
申请日：1996-12-20
申请人： Hirotoshi Yamagishi , Kiyotaka Takano , Masanori Kimura
发明人： Hirotoshi Yamagishi , Kiyotaka Takano , Masanori Kimura
IPC分类号： C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/10 , Y10T117/1032 , Y10T117/1072
摘要： In a single crystal growing apparatus which pulls a semiconductor single crystal rod 14 from a semiconductor melt 13 contained in a quartz crucible 5 to grow the semiconductor single crystal, quartz crucible 5 is designed such that it can move up and down so as to maintain the level of semiconductor melt 13 constant and a main heater 7 which can move up and down and a subheater 10 which can move up and down are provided to heat semiconductor melt 13 so that the thermal environment of semiconductor melt 13 is maintained substantially constant.
摘要翻译：在从包含在石英坩埚5中的半导体熔融物13拉出半导体单晶棒14以生长半导体单晶的单晶生长装置中，石英坩埚5被设计成能够上下移动，以保持提供半导体熔体13的恒定水平和可上下移动的主加热器7以及可上下移动的副加热器10以加热半导体熔体13，使得半导体熔体13的热环境保持基本恒定。

5. 发明授权

US6120749A Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same 失效
标题翻译：晶圆周边部分没有晶体缺陷的硅单晶及其制造方法
公开(公告)号：US6120749A
公开(公告)日：2000-09-19
申请号：US101941
申请日：1998-07-17
申请人： Kiyotaka Takano , Makoto Iida , Eiichi Iino , Masanori Kimura , Hirotoshi Yamagishi
发明人： Kiyotaka Takano , Makoto Iida , Eiichi Iino , Masanori Kimura , Hirotoshi Yamagishi
IPC分类号： C30B15/22 , C30B15/00 , C30B29/06 , H01L21/02 , H01L21/208 , C31B33/00
CPC分类号： C30B29/06 , C30B15/00 , Y10S257/913
摘要： A silicon single-crystal wafer having a diameter of 6 inches or larger and improved in the dielectric breakdown strength of oxide film especially in a peripheral part thereof is provided to thereby heighten the yield of device chips produced per wafer. This wafer has no crystal defects with regard to the dielectric breakdown strength of oxide film in its peripheral region which extends from the circumference and accounts for up to 50% of the total area, in particular which extends from the circumference to a circle 30 mm apart from the circumference. A process for producing a silicon single crystal for easily producing, by the Czochralski method, a silicon single-crystal wafer improved in the dielectric breakdown strength of oxide film especially in a peripheral part thereof without considerably lowering the production efficiency is provided. In this process, the silicon single crystal which is being grown by the Czochralski method is pulled at a rate which is 80 to 60% of the critical pull rate inherent in the pulling apparatus.
摘要翻译： PCT No.PCT / JP97 / 00090 Sec。 371日期：1998年7月17日 102（e）日期1998年7月17日PCT 1997年1月17日PCT PCT。 WO97 / 26393 PCT出版物日期1997年7月24日提供直径为6英寸或更大并且提高了氧化膜的绝缘击穿强度的硅单晶晶片，特别是其周边部分，从而提高了每片晶片产生的器件芯片的产量。该晶片在其周边区域中的氧化膜的介电击穿强度方面没有晶体缺陷，其从圆周延伸并占总面积的50％，特别是从圆周延伸到相隔30mm的圆从圆周。提供了一种用于通过切克劳斯斯克方法生产硅单晶的方法，其提供了特别在其周边部分提高氧化膜的介电击穿强度的硅单晶晶片，而不会显着降低生产效率。在这个过程中，以切克劳斯基法生长的硅单晶以牵引装置固有的临界拉伸速率的80％至60％的速率被拉伸。

6. 发明授权

US6113686A Single crystal growing method and apparatus 失效
标题翻译：单晶生长方法和装置
公开(公告)号：US6113686A
公开(公告)日：2000-09-05
申请号：US945209
申请日：1998-02-03
申请人： Eiichi Iino , Yasushi Nakamura , Seiichiro Otsuka , Koji Midzuishi , Masanori Kimura , Hirotoshi Yamagishi
发明人： Eiichi Iino , Yasushi Nakamura , Seiichiro Otsuka , Koji Midzuishi , Masanori Kimura , Hirotoshi Yamagishi
IPC分类号： C30B15/20 , C30B15/22 , C30B15/30 , C30B29/06 , C30B15/00
CPC分类号： C30B15/30 , C30B15/22 , Y10S117/90 , Y10S117/911 , Y10T117/1032
摘要： A method and apparatus for growing and manufacturing a single crystal according to a so-called Czochralski (CZ) method. A seed crystal 12 is connected to a tip end of a wire 41a as a hanging member 41 to pull and form a single crystal part 15, arm-shaped members 44a of a lifting jig 44 are engaged in a recess 16 of a corrugated portion 14 formed on the single crystal part 15 during the pulling operation, the pulling speeds of both of the arm-shaped members 44a and wire 41a are synchronously controlled to provide smooth transfer between the arm-shaped members 44a and wire 41a, whereby the single crystal part 15 is pulled always at a constant pulling speed. In particular, a heavy-weight single crystal can be safely pulled and formed without any dislocation therein while minimizing an impact force applied to the crystal.
摘要翻译： PCT No.PCT / JP96 / 01089 Sec。 371日期1998年2月3日 102（e）1998年2月3日PCT 1996年4月22日PCT PCT。公开号WO96 / 33301 日期：1996年10月24日根据所谓的Czochralski（CZ）方法生长和制造单晶的方法和装置。将晶种12连接到线41a的顶端作为悬挂构件41拉动并形成单晶部分15，提升夹具44的臂状构件44a接合在波纹状部分14的凹部16中在牵引操作期间在单晶部分15上形成的两个臂状部件44a和线41a的牵引速度被同步地控制，以在臂状部件44a和线41a之间平滑地传递，由此单晶部分 15总是以恒定的拉速拉。特别地，可以安全地拉和形成重量级的单晶而没有任何位错，同时最小化施加到晶体的冲击力。

7. 发明授权

US5792255A Manufacturing method of single crystal 失效
标题翻译：单晶的制造方法
公开(公告)号：US5792255A
公开(公告)日：1998-08-11
申请号：US655201
申请日：1996-05-30
申请人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Hirotoshi Yamagishi
发明人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/20 , C30B15/30 , C30B29/06 , C30B30/04 , C30B15/22
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1068
摘要： In a single crystal manufacturing method by a horizontal magnetic field applied CZ method wherein coils are disposed interposing a crucible coaxially with each other, the coils constituting superconductive electromagnets of a magnetic field application apparatus and the silicon crystal is pulled from melt in the crucible while applying a horizontal magnetic field to the melt; an elavation apparatus capable of finely adjusting relative positions of the superconductive electromagnets and the crcucible in a vertical direction is disposed. The descent of a central portion Cm in a depth direction of the melt is canceled by elevating the crucible with the elevating apparatus, the descent being accompanied with proceeding of process of pulling the single crystal, thereby a coil central axis Cc of the superconductive electromagnets always passes through the central portion Cm or below this portion. Compared with the conventional HMCZ method, an uniformity of an intensity distribution of the magnetic field applied to the melt is increased so that a suppression effect on the melt convection all over the crucible is enhanced.
摘要翻译：在通过水平磁场施加的CZ方法的单晶制造方法中，其中线圈彼此同轴地布置坩埚，构成磁场施加装置的超导电磁体的线圈和硅晶体在施加时从坩埚中的熔体拉出熔体的水平磁场; 设置能够精细地调整超导电磁体和坩埚在垂直方向上的相对位置的冲压装置。通过用升降装置升高坩埚来消除熔体深度方向上的中心部分Cm的下降，伴随着牵引单晶的过程的下降，超导电磁体的线圈中心轴Cc总是通过中心部分Cm或者低于该部分。与传统的HMCZ方法相比，施加到熔体的磁场的强度分布的均匀性增加，从而增强了对整个坩埚的熔体对流的抑制效果。

8. 发明授权

US5688321A Apparatus for producing a silicon single crystal by a float-zone method 失效
标题翻译：用于通过浮法法生产硅单晶的装置
公开(公告)号：US5688321A
公开(公告)日：1997-11-18
申请号：US636348
申请日：1996-04-23
申请人： Masanori Kimura , Hirotoshi Yamagishi
发明人： Masanori Kimura , Hirotoshi Yamagishi
IPC分类号： C30B13/30 , C30B13/00 , C30B13/26 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B29/06 , C30B13/26 , Y10T117/10 , Y10T117/1016
摘要： A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 .mu.m; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 1000 gauss to the molten zone; and passing the molten zone through the length of the polysilicon rod thereby the polysilicon rod is converted into a silicon single crystal ingot through a one-pass zoning of the floating zone method. An apparatus for reducing the method into practice is also described. The growing single crystal ingot is post-heated by a heat reflector near the molten zone.
摘要翻译：一种通过浮区法制造单晶硅的方法，包括以下步骤：提供平均晶粒长度为10-1000μm的多晶硅棒; 加热多晶硅棒的一部分以形成熔融区，同时向熔融区施加300至1000高斯的磁场; 并且使熔融区域通过多晶硅棒的长度，从而通过浮动区域方法的一次通过区域将多晶硅棒转变成硅单晶锭。还描述了一种用于将方法减少到实践中的装置。生长中的单晶锭通过靠近熔融区的热反射器进行后加热。

9. 发明授权

US5667588A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5667588A
公开(公告)日：1997-09-16
申请号：US658275
申请日：1996-06-05
申请人： Eiichi Iino , Kiyataka Takano , Masanori Kimura , Koji Mizuishi , Hirotoshi Yamagishi
发明人： Eiichi Iino , Kiyataka Takano , Masanori Kimura , Koji Mizuishi , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/00 , Y10S117/90 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： Arranged is a covering plate which closes and opens an entrance of a valve container between a lower chamber and an upper chamber, the lower chamber containing a crucible and the upper chamber containing a wire to pull a single crystal. The covering plate is contained in a circle-shaped space portion within a wall by closing and opening means. The covering plate closes the entrance so that an isolation valve is protected. Since at the time of opening the entrance the covering plate is contained within the wall without contacting with the wall, the fall of dusts produced by peeling off of a film deposited on the wall can be prevented. Furthermore, the covering plate is contained in a circle-shaped space portion without exposing the front and back surfaces thereof to the air.
摘要翻译：排列是在下室和上室之间封闭并打开阀容器的入口的盖板，下室容纳坩埚，上室包含用于拉出单晶的电线。盖板通过关闭和打开装置容纳在壁内的圆形空间部分中。盖板关闭入口，从而保护隔离阀。由于在打开入口时，盖板容纳在壁内而不与壁接触，所以可以防止由于通过剥离沉积在壁上的膜而产生的灰尘的掉落。此外，覆盖板容纳在圆形空间部分中，而不将其前表面和后表面暴露于空气中。

10. 发明授权

US5843229A Crystal holding apparatus 失效
标题翻译：水晶保持装置
公开(公告)号：US5843229A
公开(公告)日：1998-12-01
申请号：US763889
申请日：1996-12-11
申请人： Masanori Kimura , Eiichi Iino , Hirotoshi Yamagishi , Kiyotaka Takano
发明人： Masanori Kimura , Eiichi Iino , Hirotoshi Yamagishi , Kiyotaka Takano
IPC分类号： C30B15/32 , C30B15/30 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/30 , Y10T117/1032 , Y10T117/1072
摘要： In a crystal holding apparatus, a stepped engagement portion of a single crystal formed below a seed crystal is held by holding portions of a pair of lifting jigs so as to be pulled up. A lock mechanism consisting of a hook lever and an engagement pin is provided in order to prevent the closed lifting jigs from opening. Further, a portion of each holding portion to be contacted with a crystal is provided with a swing claw which is swingable about a horizontal pin. Accordingly, it becomes possible to reliably hold the crystal, to prevent generation of a defect in the crystal structure, and to prevent a material melt from being contaminated.
摘要翻译：在晶体保持装置中，通过保持一对提升夹具的一部分来保持形成在晶种下方的单晶的阶梯状接合部分，以便被拉起。提供由钩杆和接合销构成的锁定机构，以防止闭合的起重工具打开。此外，与晶体接触的每个保持部分的一部分设置有可围绕水平销摆动的摆动爪。因此，可以可靠地保持晶体，以防止晶体结构中的缺陷的产生，并且防止材料熔体被污染。

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