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1. 发明授权

US5735951A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5735951A
公开(公告)日：1998-04-07
申请号：US673590
申请日：1996-07-01
申请人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Koji Mizuishi , Hirotoshi Yamagishi
发明人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Koji Mizuishi , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/00 , C30B15/14 , Y10S117/90 , Y10T117/1032 , Y10T117/1068
摘要： A single crystal pulling apparatus which eliminates trouble caused by an isolation valve heated to a high temperature uses a heat insulation plate provided below the isolation valve. The heat insulation plate is operated synchronously with the opening or closing of the isolation valve. The heat insulation plate prevents hot gases from coming from the lower chamber from coming into direct contact with the isolation valve. The prevention of overheating of the isolation valve provides for smooth operation and growth of a good quality single crystal.
摘要翻译：消除由加热到高温的隔离阀引起的麻烦的单晶拉制装置使用设置在隔离阀下方的隔热板。绝热板与隔离阀的打开或关闭同步运行。隔热板防止来自下部室的热气体与隔离阀直接接触。防止隔离阀过热，提供良好的单晶的平稳运行和生长。

2. 发明授权

US5667588A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5667588A
公开(公告)日：1997-09-16
申请号：US658275
申请日：1996-06-05
申请人： Eiichi Iino , Kiyataka Takano , Masanori Kimura , Koji Mizuishi , Hirotoshi Yamagishi
发明人： Eiichi Iino , Kiyataka Takano , Masanori Kimura , Koji Mizuishi , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/00 , Y10S117/90 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： Arranged is a covering plate which closes and opens an entrance of a valve container between a lower chamber and an upper chamber, the lower chamber containing a crucible and the upper chamber containing a wire to pull a single crystal. The covering plate is contained in a circle-shaped space portion within a wall by closing and opening means. The covering plate closes the entrance so that an isolation valve is protected. Since at the time of opening the entrance the covering plate is contained within the wall without contacting with the wall, the fall of dusts produced by peeling off of a film deposited on the wall can be prevented. Furthermore, the covering plate is contained in a circle-shaped space portion without exposing the front and back surfaces thereof to the air.
摘要翻译：排列是在下室和上室之间封闭并打开阀容器的入口的盖板，下室容纳坩埚，上室包含用于拉出单晶的电线。盖板通过关闭和打开装置容纳在壁内的圆形空间部分中。盖板关闭入口，从而保护隔离阀。由于在打开入口时，盖板容纳在壁内而不与壁接触，所以可以防止由于通过剥离沉积在壁上的膜而产生的灰尘的掉落。此外，覆盖板容纳在圆形空间部分中，而不将其前表面和后表面暴露于空气中。

3. 发明授权

US5462010A Apparatus for supplying granular raw material for a semiconductor single crystal pulling apparatus 失效
标题翻译：用于半导体单晶拉制装置的颗粒状原料的供给装置
公开(公告)号：US5462010A
公开(公告)日：1995-10-31
申请号：US961182
申请日：1992-10-14
申请人： Kiyotaka Takano , Izumi Fusegawa , Hirotoshi Yamagishi , Koji Mizuishi , Katsuhiko Ogino
发明人： Kiyotaka Takano , Izumi Fusegawa , Hirotoshi Yamagishi , Koji Mizuishi , Katsuhiko Ogino
IPC分类号： B01J4/02 , B01J8/00 , C30B15/02
CPC分类号： B01J8/002 , C30B15/02 , Y10T117/1056
摘要： An apparatus for continuously supplying granular polycrystal silicon to a crucible of a semiconductor single crystal pulling apparatus, comprising a funnel-shaped tank having a relatively large capacity, a main hopper having a relatively small capacity and weight, a subhopper having an intermediate capacity and weight and providing a passage from said tank to said main hopper, and a weight sensor for detecting the weight of the main hopper, wherein the overall weight of the main hopper is measured to obtain the flow rate (supply rate) of the granular polycrystal silicon.
摘要翻译：一种用于连续地向半导体单晶拉制装置的坩埚供应颗粒状多晶硅的装置，包括具有相对较大容量的漏斗形罐，具有相对较小容量和重量的主料斗，具有中等容量和重量的踢脚板并且从所述罐提供到所述主料斗的通道，以及用于检测主料斗重量的重量传感器，其中测量主料斗的总重量以获得颗粒状多晶硅的流量（供给速率）。

4. 发明授权

US5900055A Method of manufacturing silicon monocrystal by continuously charged Czochralski method 失效
标题翻译：通过连续充电的Czochralski法制造单晶硅的方法
公开(公告)号：US5900055A
公开(公告)日：1999-05-04
申请号：US829894
申请日：1997-03-25
申请人： Naoki Nagai , Koji Mizuishi , Michiaki Oda
发明人： Naoki Nagai , Koji Mizuishi , Michiaki Oda
IPC分类号： C30B15/04 , C30B29/06 , H01L21/208 , C30B15/02
CPC分类号： C30B15/04 , Y10T117/1052 , Y10T117/1056
摘要： A silicon monocrystal is manufactured according to the continuously charged Czochralski method in which a double crucible is used which includes an outer crucible and an inner crucible which communicate with each other through pores. A dopant is charged to the silicon melt stored in the double crucible before commencing pulling of a silicon monocrystal such that the ratio of the dopant concentration of the silicon melt stored in the outer crucible to the dopant concentration of the silicon melt stored in the inner crucible becomes greater than an effective segregation coefficient of the dopant. The silicon monocrystal is then pulled while silicon material is charged to the silicon melt within the outer crucible, during which the dopant concentration ratio becomes equal to the effective segregation coefficient and then becomes smaller than the effective segregation coefficient. When the dopant concentration ratio becomes smaller than the effective segregation coefficient, the dopant is charged to the silicon melt stored in the outer crucible. The above operation is repeated, so that the specific resistance of the silicon monocrystal pulled from the double crucible can be controlled within a desired range using commonly-employed dopant.
摘要翻译：根据连续充电的Czochralski法制造硅单晶，其中使用包括通过孔彼此连通的外坩埚和内坩埚的双坩埚。在开始拉制硅单晶之前，将掺杂剂充入存储在双坩埚中的硅熔体，使得存储在外坩埚中的硅熔体的掺杂剂浓度与存储在内坩埚中的硅熔体的掺杂剂浓度之比变得大于掺杂剂的有效偏析系数。然后拉伸硅单晶，同时将硅材料充入外坩埚内的硅熔体，在此期间掺杂剂浓度比变得等于有效偏析系数，然后变得小于有效偏析系数。当掺杂剂浓度比变得小于有效偏析系数时，掺杂剂被加到存储在外坩埚中的硅熔体中。重复上述操作，使得从双坩埚拉出的单晶硅的电阻率可以使用常用的掺杂剂控制在期望的范围内。

5. 发明授权

US5330729A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5330729A
公开(公告)日：1994-07-19
申请号：US833986
申请日：1992-02-10
申请人： Michiaki Oda , Koji Mizuishi
发明人： Michiaki Oda , Koji Mizuishi
IPC分类号： C30B11/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B15/02
CPC分类号： C30B15/14 , Y10T117/1068 , Y10T117/1072
摘要： A single crystal pulling apparatus of the Czochralski method type wherein the cylindrical heater is supported not only by the two existing electrodes which are vertically shiftable but also by one or more vertical shafts, which may be electrodes or electrically insulated dummy electrodes; the vertical shafts are capable of shifting vertically in synchronism with the existing two electrodes, and are arranged in a manner such that the existing two electrodes and the vertical shafts are at regular intervals along the bottom circumference of the cylindrical heater.
摘要翻译： Czochralski方法式的单晶拉制装置，其中圆柱形加热器不仅由可垂直移动的两个现有电极支撑，而且由一个或多个垂直轴支撑，垂直轴可以是电极或电绝缘的虚拟电极; 垂直轴能够与现有的两个电极同步地垂直移动，并且以使得现有的两个电极和垂直轴沿着圆柱形加热器的底部圆周规则间隔的方式布置。

6. 发明授权

US5089239A Wire vibration prevention mechanism for a single crystal pulling apparatus 失效
标题翻译：单晶拉丝装置的电线振动预防机制
公开(公告)号：US5089239A
公开(公告)日：1992-02-18
申请号：US509846
申请日：1990-04-17
申请人： Koji Mizuishi , Isamu Harada , Yasushi Nakamura , Michiaki Oda , Seiichiro Ohtsuka , Yoshihiro Hirano , Masahiko Urano
发明人： Koji Mizuishi , Isamu Harada , Yasushi Nakamura , Michiaki Oda , Seiichiro Ohtsuka , Yoshihiro Hirano , Masahiko Urano
IPC分类号： C30B15/20 , C30B15/30
CPC分类号： C30B15/30 , C30B15/20 , Y10T117/1072
摘要： A single crystal pulling apparatus having a wire which is used to pull a crystal is provided with a novel wire vibration prevention mechanism. The wire vibration prevention mechanism includes wire restriction devices which restrict the movement of the wire to movement in the vertical direction. The wire restriction devices may be mechanically driven in the horizontal direction in order to center the pulled crystal. The wire restriction devices are driven by pneumatic air cylinders. Use of the wire vibration prevention mechanism avoids the formation of deformed growth of the pulled crystal and thus reduces the occurrence of dislocations in the pulled crystal.

7. 发明授权

US5096677A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝装置
公开(公告)号：US5096677A
公开(公告)日：1992-03-17
申请号：US530522
申请日：1990-05-30
申请人： Nobuo Katsuoka , Koji Mizuishi , Shinichi Furuse , Shigemaru Maeda
发明人： Nobuo Katsuoka , Koji Mizuishi , Shinichi Furuse , Shigemaru Maeda
IPC分类号： C30B15/30 , C30B15/14 , H01L21/208
CPC分类号： C30B15/14 , Y10T117/1008 , Y10T117/1068
摘要： A Czochralski-type single crystal pulling apparatus in which the heater device is adapted to shift vertically, and a control device is provided for controlling the vertical shifting of the heater and the crucible assembly in predetermined manners, of which a preferred manner is to control the vertical shifting of the heater and the crucible assembly such that the vertical velocities of the crucible assembly and the heater are in direct proportion to the vertical velocity of the pull means.

8. 发明授权

US5020775A Isolation valve used in a single crystal pulling apparatus 失效
标题翻译：隔离阀用于单晶拉制装置
公开(公告)号：US5020775A
公开(公告)日：1991-06-04
申请号：US495964
申请日：1990-03-20
申请人： Atsushi Iwasaki , Koji Mizuishi , Michiaki Oda
发明人： Atsushi Iwasaki , Koji Mizuishi , Michiaki Oda
IPC分类号： F16K3/18 , C30B15/00 , H01L21/208
CPC分类号： C30B15/00 , Y10S251/90
摘要： An isolation valve used in a single crystal pulling apparatus, having a frame (11), a vertical passageway for communication between a main chamber and an upper pull chamber of the single crystal pulling apparatus, a shaft (13) capable of turning about its axis and reciprocating vertically, a lever (20) for turning the shaft, a drive means (18) for reciprocating the shaft (13), an arm (14) fixed to the shaft (13), a circular shutter (15) held by the arm (14) for closing and opening the vertical passageway, and a flange (9) defining a hole which communicates the passageway with the main chamber, wherein a cylindrical cavity is made in the bottom of the circular shutter (15); the flange (9) has a circular raised rim (9b) extending upward whose outer diameter is slightly smaller than the diameter of the cylindrical cavity of the shutter; and an endless circular seal means (17) is embedded partially in either the external vertical wall of the raised rim (9b) of the flange or the internal vertical wall of the shutter (15).

9. 发明授权

US5356113A Isolation valve for single crystal pulling apparatus 失效
标题翻译：单晶拉拔装置隔离阀
公开(公告)号：US5356113A
公开(公告)日：1994-10-18
申请号：US125187
申请日：1993-09-23
申请人： Koji Mizuishi , Kouzou Yokota , Katsuhiko Ogino
发明人： Koji Mizuishi , Kouzou Yokota , Katsuhiko Ogino
IPC分类号： F16K25/00 , C30B15/00 , F16K51/02 , F16K3/16
CPC分类号： C30B15/00 , F16K51/02
摘要： An isolation valve for a single crystal pulling apparatus providing a good sealing performance is disclosed. The apparatus comprises a casing having two opposite valve seats, a first valve seat having a first opening communicable with the main chamber of the apparatus, a second valve seat having a second opening communicable with the pull chamber of the apparatus. The body of the isolation valve includes a first plate movable in and out of contact with the first valve seat to open and shut the first opening, a second plate movable in and out of contact with the second valve seat to open and shut the second opening, and a bellows connecting the first and second plates. The isolation valve also comprises a holder holding the first plate out of contact with the first valve seat when the first plate is opposite to the first valve seat, a passage communicable with a fluid supply and the interior of the valve body, and a controller controlling the pressure of a working fluid supplied from the fluid supply into the interior of the valve body. The controller has a first set pressure at which the first and second plates are in contact with the first and second valve seats and a second set pressure at which the first and second plates are out of contact with the first and second valve seats.
摘要翻译：公开了一种提供良好密封性能的单晶拉制装置的隔离阀。该装置包括具有两个相对的阀座的壳体，具有可与该装置的主室连通的第一开口的第一阀座，具有可与该装置的拉腔连通的第二开口的第二阀座。隔离阀的主体包括可与第一阀座接触并与第一阀座接触以打开和关闭第一开口的第一板，与第二阀座可移动和脱离接触的第二板，以打开和关闭第二开口以及连接第一和第二板的波纹管。隔离阀还包括保持器，当第一板与第一阀座相对时，保持第一板与第一阀座不接触，可与流体供应和阀体内部通信的通道，以及控制器从液体供给到阀体内部的工作流体的压力。控制器具有第一和第二板与第一和第二阀座接触的第一设定压力和第一和第二板与第一和第二阀座不接触的第二设定压力。

10. 发明授权

US5254319A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5254319A
公开(公告)日：1993-10-19
申请号：US829900
申请日：1992-02-03
申请人： Michiaki Oda , Koji Mizuishi
发明人： Michiaki Oda , Koji Mizuishi
IPC分类号： C30B15/00 , C30B15/30 , C30B29/06 , H01L21/208 , C30B15/10
CPC分类号： C30B15/30 , C30B15/00 , Y10T117/106 , Y10T117/1072
摘要： Aa single crystal pulling apparatus installed on a frame body further includes a second frame body which is founded independently from the main chamber to rigidly support the winder assembly, and a hermetical and flexible tube which is provided between the winder assembly and the pull chamber to prevent any stress and vibration from travelling from the winder assembly to the pull chamber and vice versa, while providing a communication passage between the winder assembly and the pull chamber.

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