专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5735951A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5735951A
公开(公告)日：1998-04-07
申请号：US673590
申请日：1996-07-01
申请人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Koji Mizuishi , Hirotoshi Yamagishi
发明人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Koji Mizuishi , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/00 , C30B15/14 , Y10S117/90 , Y10T117/1032 , Y10T117/1068
摘要： A single crystal pulling apparatus which eliminates trouble caused by an isolation valve heated to a high temperature uses a heat insulation plate provided below the isolation valve. The heat insulation plate is operated synchronously with the opening or closing of the isolation valve. The heat insulation plate prevents hot gases from coming from the lower chamber from coming into direct contact with the isolation valve. The prevention of overheating of the isolation valve provides for smooth operation and growth of a good quality single crystal.
摘要翻译：消除由加热到高温的隔离阀引起的麻烦的单晶拉制装置使用设置在隔离阀下方的隔热板。绝热板与隔离阀的打开或关闭同步运行。隔热板防止来自下部室的热气体与隔离阀直接接触。防止隔离阀过热，提供良好的单晶的平稳运行和生长。

2. 发明授权

US5980630A Manufacturing method of single crystal and apparatus of manufacturing the same 失效
标题翻译：单晶的制造方法及其制造方法
公开(公告)号：US5980630A
公开(公告)日：1999-11-09
申请号：US81665
申请日：1998-05-20
申请人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Hirotoshi Yamagishi
发明人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/20 , C30B15/30 , C30B29/06 , C30B30/04 , C30B35/00
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1068
摘要： In a single crystal manufacturing method by a horizontal magnetic field applied CZ method wherein coils are disposed interposing a crucible coaxially with each other, the coils constituting superconductive electromagnets of a magnetic field application apparatus and the silicon crystal is pulled from melt in the crucible while applying a horizontal magnetic field to the melt; an elavation apparatus capable of finely adjusting relative positions of the superconductive electromagnets and the crcucible in a vertical direction is disposed. The descent of a central portion Cm in a depth direction of the melt is canceled by elevating the crucible with the elevating apparatus, the descent being accompanied with proceeding of process of pulling the single crystal, thereby a coil central axis Cc of the superconductive electromagnets always passes through the central portion Cm or below this portion. Compared with the conventional HMCZ method, an uniformity of an intensity distribution of the magnetic field applied to the melt is increased so that a suppression effect on the melt convection all over the crucible is enhanced.
摘要翻译：在通过水平磁场施加的CZ方法的单晶制造方法中，其中线圈彼此同轴地布置坩埚，构成磁场施加装置的超导电磁体的线圈和硅晶体在施加时从坩埚中的熔体拉出熔体的水平磁场; 设置能够精细地调整超导电磁体和坩埚在垂直方向上的相对位置的冲压装置。通过用升降装置升高坩埚来消除熔体深度方向上的中心部分Cm的下降，伴随着牵引单晶的过程的下降，超导电磁体的线圈中心轴Cc总是通过中心部分Cm或者低于该部分。与传统的HMCZ方法相比，施加到熔体的磁场的强度分布的均匀性增加，从而增强了对整个坩埚的熔体对流的抑制效果。

3. 发明授权

US5667588A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5667588A
公开(公告)日：1997-09-16
申请号：US658275
申请日：1996-06-05
申请人： Eiichi Iino , Kiyataka Takano , Masanori Kimura , Koji Mizuishi , Hirotoshi Yamagishi
发明人： Eiichi Iino , Kiyataka Takano , Masanori Kimura , Koji Mizuishi , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/00 , Y10S117/90 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： Arranged is a covering plate which closes and opens an entrance of a valve container between a lower chamber and an upper chamber, the lower chamber containing a crucible and the upper chamber containing a wire to pull a single crystal. The covering plate is contained in a circle-shaped space portion within a wall by closing and opening means. The covering plate closes the entrance so that an isolation valve is protected. Since at the time of opening the entrance the covering plate is contained within the wall without contacting with the wall, the fall of dusts produced by peeling off of a film deposited on the wall can be prevented. Furthermore, the covering plate is contained in a circle-shaped space portion without exposing the front and back surfaces thereof to the air.
摘要翻译：排列是在下室和上室之间封闭并打开阀容器的入口的盖板，下室容纳坩埚，上室包含用于拉出单晶的电线。盖板通过关闭和打开装置容纳在壁内的圆形空间部分中。盖板关闭入口，从而保护隔离阀。由于在打开入口时，盖板容纳在壁内而不与壁接触，所以可以防止由于通过剥离沉积在壁上的膜而产生的灰尘的掉落。此外，覆盖板容纳在圆形空间部分中，而不将其前表面和后表面暴露于空气中。

4. 发明授权

US5843229A Crystal holding apparatus 失效
标题翻译：水晶保持装置
公开(公告)号：US5843229A
公开(公告)日：1998-12-01
申请号：US763889
申请日：1996-12-11
申请人： Masanori Kimura , Eiichi Iino , Hirotoshi Yamagishi , Kiyotaka Takano
发明人： Masanori Kimura , Eiichi Iino , Hirotoshi Yamagishi , Kiyotaka Takano
IPC分类号： C30B15/32 , C30B15/30 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/30 , Y10T117/1032 , Y10T117/1072
摘要： In a crystal holding apparatus, a stepped engagement portion of a single crystal formed below a seed crystal is held by holding portions of a pair of lifting jigs so as to be pulled up. A lock mechanism consisting of a hook lever and an engagement pin is provided in order to prevent the closed lifting jigs from opening. Further, a portion of each holding portion to be contacted with a crystal is provided with a swing claw which is swingable about a horizontal pin. Accordingly, it becomes possible to reliably hold the crystal, to prevent generation of a defect in the crystal structure, and to prevent a material melt from being contaminated.
摘要翻译：在晶体保持装置中，通过保持一对提升夹具的一部分来保持形成在晶种下方的单晶的阶梯状接合部分，以便被拉起。提供由钩杆和接合销构成的锁定机构，以防止闭合的起重工具打开。此外，与晶体接触的每个保持部分的一部分设置有可围绕水平销摆动的摆动爪。因此，可以可靠地保持晶体，以防止晶体结构中的缺陷的产生，并且防止材料熔体被污染。

5. 发明授权

US5788718A Apparatus and a method for growing a single crystal 失效
标题翻译：用于生长单晶的装置和方法
公开(公告)号：US5788718A
公开(公告)日：1998-08-04
申请号：US777731
申请日：1996-12-20
申请人： Hirotoshi Yamagishi , Kiyotaka Takano , Eiichi Iino , Masanori Kimura
发明人： Hirotoshi Yamagishi , Kiyotaka Takano , Eiichi Iino , Masanori Kimura
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072
摘要： An apparatus for growing a single crystal which comprises a quartz crucible in a chamber for containing a semiconductor melt from which a semiconductor single crystal rod is pulled, wherein there further comprises a cylinder concentrically surrounding the single crystal rod to be pulled whose top is connected to the edge of the opening at the center of the ceiling of the chamber in an airtight fashion and whose bottom hangs down toward the semiconductor melt, and a collar which spreads open upward and outward and whose outer circumferential part extends above the top end of the quartz crucible wherein the outer circumferential part is situated such that it does not touch the top end of the quartz crucible when said quartz crucible is at its highest position.
摘要翻译：一种用于生长单晶的装置，其包括在用于容纳半导体单晶棒的半导体熔体的室中的石英坩埚，所述半导体熔融体从其拉出半导体单晶棒，其中还包括圆筒同心地围绕待拉的单晶棒，其顶部连接到开口的边缘以气密的方式在室的顶部的中心处，并且其底部朝向半导体熔体向下延伸;以及轴环，其向上和向外敞开并且其外周部分在石英的顶端之上延伸坩埚，其中外圆周部分被定位成使得当所述石英坩埚处于其最高位置时，其不接触石英坩埚的顶端。

6. 发明授权

US5728211A Silicon single crystal with low defect density and method of producing same 失效
标题翻译：具有低缺陷密度的硅单晶及其制造方法
公开(公告)号：US5728211A
公开(公告)日：1998-03-17
申请号：US660198
申请日：1996-06-03
申请人： Kiyotaka Takano , Kouji Kitagawa , Eiichi Iino , Masanori Kimura , Hirotoshi Yamagishi , Masahiro Sakurada
发明人： Kiyotaka Takano , Kouji Kitagawa , Eiichi Iino , Masanori Kimura , Hirotoshi Yamagishi , Masahiro Sakurada
IPC分类号： C30B15/00 , C30B15/20 , C30B29/06 , C30B33/02 , H01L21/208
CPC分类号： C30B29/06 , C30B15/206
摘要： A silicon single crystal having low defects, such as flow pattern defects and laser scattering tomography defects, and high dielectric breakdown strength in oxides and a method of producing the same using the Czochralski technique comprising steps of adjusting a first passage time of a growing crystal for a first temperature range of the melting point to 1,200.degree. C. so as to be 190 min. or shorter and adjusting a second passage time thereof for a second temperature range of 1,150.degree. C. to 1,080.degree. C. so as to be 60 min. or longer during crystal growth.
摘要翻译：具有低缺陷的硅单晶，例如流动图案缺陷和激光散射断层摄影缺陷，以及氧化物中的高介电击穿强度，以及使用切克劳斯基法生产该方法的方法，包括以下步骤：调节生长晶体的第一通过时间熔点为1200℃的第一温度范围为190分钟。或更短，并将第二通过时间调节为1150℃至1080℃的第二温度范围，以使其为60分钟。或更长时间。

7. 发明授权

US6120749A Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same 失效
标题翻译：晶圆周边部分没有晶体缺陷的硅单晶及其制造方法
公开(公告)号：US6120749A
公开(公告)日：2000-09-19
申请号：US101941
申请日：1998-07-17
申请人： Kiyotaka Takano , Makoto Iida , Eiichi Iino , Masanori Kimura , Hirotoshi Yamagishi
发明人： Kiyotaka Takano , Makoto Iida , Eiichi Iino , Masanori Kimura , Hirotoshi Yamagishi
IPC分类号： C30B15/22 , C30B15/00 , C30B29/06 , H01L21/02 , H01L21/208 , C31B33/00
CPC分类号： C30B29/06 , C30B15/00 , Y10S257/913
摘要： A silicon single-crystal wafer having a diameter of 6 inches or larger and improved in the dielectric breakdown strength of oxide film especially in a peripheral part thereof is provided to thereby heighten the yield of device chips produced per wafer. This wafer has no crystal defects with regard to the dielectric breakdown strength of oxide film in its peripheral region which extends from the circumference and accounts for up to 50% of the total area, in particular which extends from the circumference to a circle 30 mm apart from the circumference. A process for producing a silicon single crystal for easily producing, by the Czochralski method, a silicon single-crystal wafer improved in the dielectric breakdown strength of oxide film especially in a peripheral part thereof without considerably lowering the production efficiency is provided. In this process, the silicon single crystal which is being grown by the Czochralski method is pulled at a rate which is 80 to 60% of the critical pull rate inherent in the pulling apparatus.
摘要翻译： PCT No.PCT / JP97 / 00090 Sec。 371日期：1998年7月17日 102（e）日期1998年7月17日PCT 1997年1月17日PCT PCT。 WO97 / 26393 PCT出版物日期1997年7月24日提供直径为6英寸或更大并且提高了氧化膜的绝缘击穿强度的硅单晶晶片，特别是其周边部分，从而提高了每片晶片产生的器件芯片的产量。该晶片在其周边区域中的氧化膜的介电击穿强度方面没有晶体缺陷，其从圆周延伸并占总面积的50％，特别是从圆周延伸到相隔30mm的圆从圆周。提供了一种用于通过切克劳斯斯克方法生产硅单晶的方法，其提供了特别在其周边部分提高氧化膜的介电击穿强度的硅单晶晶片，而不会显着降低生产效率。在这个过程中，以切克劳斯基法生长的硅单晶以牵引装置固有的临界拉伸速率的80％至60％的速率被拉伸。

8. 发明授权

US5792255A Manufacturing method of single crystal 失效
标题翻译：单晶的制造方法
公开(公告)号：US5792255A
公开(公告)日：1998-08-11
申请号：US655201
申请日：1996-05-30
申请人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Hirotoshi Yamagishi
发明人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/20 , C30B15/30 , C30B29/06 , C30B30/04 , C30B15/22
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1068
摘要： In a single crystal manufacturing method by a horizontal magnetic field applied CZ method wherein coils are disposed interposing a crucible coaxially with each other, the coils constituting superconductive electromagnets of a magnetic field application apparatus and the silicon crystal is pulled from melt in the crucible while applying a horizontal magnetic field to the melt; an elavation apparatus capable of finely adjusting relative positions of the superconductive electromagnets and the crcucible in a vertical direction is disposed. The descent of a central portion Cm in a depth direction of the melt is canceled by elevating the crucible with the elevating apparatus, the descent being accompanied with proceeding of process of pulling the single crystal, thereby a coil central axis Cc of the superconductive electromagnets always passes through the central portion Cm or below this portion. Compared with the conventional HMCZ method, an uniformity of an intensity distribution of the magnetic field applied to the melt is increased so that a suppression effect on the melt convection all over the crucible is enhanced.
摘要翻译：在通过水平磁场施加的CZ方法的单晶制造方法中，其中线圈彼此同轴地布置坩埚，构成磁场施加装置的超导电磁体的线圈和硅晶体在施加时从坩埚中的熔体拉出熔体的水平磁场; 设置能够精细地调整超导电磁体和坩埚在垂直方向上的相对位置的冲压装置。通过用升降装置升高坩埚来消除熔体深度方向上的中心部分Cm的下降，伴随着牵引单晶的过程的下降，超导电磁体的线圈中心轴Cc总是通过中心部分Cm或者低于该部分。与传统的HMCZ方法相比，施加到熔体的磁场的强度分布的均匀性增加，从而增强了对整个坩埚的熔体对流的抑制效果。

9. 发明授权

US5720809A Crucible for pulling silicon single crystal 失效
标题翻译：坩埚用于拉硅单晶
公开(公告)号：US5720809A
公开(公告)日：1998-02-24
申请号：US510436
申请日：1995-08-02
申请人： Eiichi Iino , Kiyotaka Takano , Izumi Fusegawa , Hirotoshi Yamagishi
发明人： Eiichi Iino , Kiyotaka Takano , Izumi Fusegawa , Hirotoshi Yamagishi
IPC分类号： C30B15/02 , C30B15/12 , C30B29/06
CPC分类号： C30B15/02 , C30B15/12 , Y10S117/90 , Y10T117/1052
摘要： A double-wall crucible is disclosed which is constructed by coaxially disposing a cylindrical partition wall in an outer crucible for holding a molten mass of silicon as a raw material and operated by heating the outer crucible and meanwhile supplying the raw material silicon to the gap between the outer crucible and the cylindrical partition wall and introducing the consequently produced molten mass of silicon to the interior of the cylindrical partition wall through a passage below the level of the molten mass of silicon interconnecting the outer crucible and the inner side of the cylindrical partition wall and meanwhile pulling a single crystal bar from the molten mass of silicon in the cylindrical partition wall. In this double-wall crucible, at least the cylindrical partition wall is formed of quartz glass having a hydroxyl group (OH group) content of not more than 30 ppm. In the crucible of this invention, the produced silicon single crystal enjoys improved quality and the operation of pulling enjoys enhanced yield because the cylindrical partition wall is softened or deformed only sparingly by the intense heat emanating from the molten mass of silicon. Since the cylindrical partition wall does not readily soften or deform on exposure to the heat, the partition wall can be fixed in place with a simple construction and the whole apparatus for the operation of pulling enjoys simplicity of construction and low cost of production.
摘要翻译：公开了一种双壁坩埚，其通过在外坩埚中同轴设置圆筒形分隔壁而构成，用于将硅熔体作为原料保持，并通过加热外坩埚进行操作，同时将原料硅供应到外坩埚和圆柱形分隔壁，并将由此产生的硅熔融物质通过下列通道引导到圆筒形分隔壁的内部，该通道位于将外坩埚与圆柱形分隔壁的内侧相互连接的熔融物质层的下方同时从圆柱形分隔壁的硅熔融体中拉出单晶棒。在该双壁坩埚中，至少圆筒形分隔壁由羟基（OH基）含量为30ppm以下的石英玻璃构成。在本发明的坩埚中，所生产的硅单晶具有改进的质量，并且由于由熔融硅团发出的强烈热量，圆柱形分隔壁被轻微软化或变形，所以拉伸操作具有提高的产量。由于圆柱形分隔壁在暴露于热量时不容易软化或变形，因此能够以简单的结构将分隔壁固定就位，并且用于拉动操作的整个装置具有简单的结构和低成本的生产。

10. 发明授权

US5667584A Method for the preparation of a single crystal of silicon with decreased crystal defects 失效
标题翻译：制备晶体缺陷降低的硅单晶的方法
公开(公告)号：US5667584A
公开(公告)日：1997-09-16
申请号：US565100
申请日：1995-11-30
申请人： Kiyotaka Takano , Eiichi Iino , Masahiro Sakurada , Hirotoshi Yamagishi
发明人： Kiyotaka Takano , Eiichi Iino , Masahiro Sakurada , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/14 , C30B15/22 , C30B29/06 , H01L21/208 , C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/1032
摘要： An improvement is proposed in the single crystal growing process of semiconductor silicon in the Czochralski process to obtain a silicon single crystal having a greatly decreased number of crystal defects without affecting the productivity. The improvement can be accomplished by an adequate arrangement of the cooling zone of the single crystal growing puller to have such a temperature distribution that the time taken by the growing single crystal to pass through the temperature range from the melting point of silicon to 1200.degree. C. is from 50 minutes to 200 minutes and the time taken by the growing single crystal to pass through the temperature range from 1200.degree. C. to 1000.degree. C. does not exceed 130 minutes.
摘要翻译：在Czochralski工艺中在半导体硅的单晶生长工艺中提出了一种改进，以获得在不影响生产率的情况下晶体缺陷数量大大降低的硅单晶。可以通过单晶生长拉拔器的冷却区的适当布置来实现改进，以具有这样的温度分布，使得生长的单晶经过从硅的熔点到1200℃的温度范围所花费的时间是从50分钟到200分钟，并且生长的单晶通过1200℃至1000℃的温度所花费的时间不超过130分钟。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式