专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07738524B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07738524B2
公开(公告)日：2010-06-15
申请号：US11494444
申请日：2006-07-28
申请人： Masanao Ochiai , Koji Yuasa
发明人： Masanao Ochiai , Koji Yuasa
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0282 , H01S5/0287 , H01S5/16 , H01S5/34333
摘要： A semiconductor laser device, which has a protective film at an end surface thereof, is adaptable to demands for higher outputs or shorter wavelengths. The semiconductor laser device according to the present invention includes a dielectric film on at least one end surface of an optical resonator, in which the dielectric film includes a first dielectric layer and a second dielectric layer comprised of the same elements and disposed in sequence from the end surface side of the semiconductor, the first dielectric layer including a layer made of a single crystal material and the second dielectric layer including a layer made of an amorphous material.
摘要翻译：在其端面具有保护膜的半导体激光器件适用于要求更高输出或更短波长的要求。根据本发明的半导体激光器件包括在光学谐振器的至少一个端面上的电介质膜，其中介电膜包括第一介电层和由相同元件组成的第二介电层，并且从第所述第一电介质层包括由单晶材料制成的层，所述第二电介质层包括由非晶材料制成的层。

2. 发明申请

US20070025231A1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20070025231A1
公开(公告)日：2007-02-01
申请号：US11494444
申请日：2006-07-28
申请人： Masanao Ochiai , Koji Yuasa
发明人： Masanao Ochiai , Koji Yuasa
IPC分类号： G11B7/00
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0282 , H01S5/0287 , H01S5/16 , H01S5/34333
摘要： A semiconductor laser device, which has a protective film at an end surface thereof, is adaptable to demands for higher outputs or shorter wavelengths. The semiconductor laser device according to the present invention includes a dielectric film on at least one end surface of an optical resonator, in which the dielectric film includes a first dielectric layer and a second dielectric layer comprised of the same elements and disposed in sequence from the end surface side of the semiconductor, the first dielectric layer including a layer made of a single crystal material and the second dielectric layer including a layer made of an amorphous material.
摘要翻译：在其端面具有保护膜的半导体激光器件适用于要求更高输出或更短波长的要求。根据本发明的半导体激光器件包括在光学谐振器的至少一个端面上的电介质膜，其中介电膜包括第一介电层和由相同元件组成的第二介电层，并且从第所述第一电介质层包括由单晶材料制成的层，所述第二电介质层包括由非晶材料制成的层。

3. 发明授权

US06876685B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06876685B2
公开(公告)日：2005-04-05
申请号：US10457823
申请日：2003-06-10
申请人： Hitoshi Umemoto , Hiroaki Matsumura , Masanao Ochiai
发明人： Hitoshi Umemoto , Hiroaki Matsumura , Masanao Ochiai
IPC分类号： G11B7/125 , G02B6/42 , G11B7/135 , H01L31/12 , H01S5/022 , H01S5/0683 , H01S5/323 , H01S3/04 , H01S5/00
CPC分类号： H01S5/02296 , G02B6/4204 , G02B6/4246 , H01L2224/48091 , H01S5/0021 , H01S5/0683 , H01L2924/00014
摘要： A laser device having at least a semiconductor laser element, a window allowing light emitted from the emission end face of the semiconductor laser element to pass therethrough, a photodetector detecting a portion of emitted light reflected from the window that is not being transmitted, and a stem whereon the semiconductor laser element and the photodetector are installed. The window is disposed vertically above the semiconductor laser element. The photodetector is placed at an angle with respect to a horizontal plane and is located contiguous with the main surface of the stem. The laser device is capable of maintaining a stable APC drive regardless of the deterioration of the semiconductor laser element that may occur from continuous oscillation for a long time.
摘要翻译：一种具有至少半导体激光元件的激光器件，允许从半导体激光元件的发射端面发射的光通过的窗口，检测从未被透射的窗口反射的发射光的一部分的光电检测器，以及其中安装了半导体激光元件和光电检测器。窗口垂直设置在半导体激光元件的上方。光电检测器相对于水平面以一定角度放置，并且与杆的主表面相邻。无论长时间连续振荡都可能发生的半导体激光元件的劣化，激光装置能够保持稳定的APC驱动。

4. 发明申请

US20060262823A1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20060262823A1
公开(公告)日：2006-11-23
申请号：US11494447
申请日：2006-07-28
申请人： Yasunobu Sugimoto , Masanao Ochiai , Akinori Yoneda
发明人： Yasunobu Sugimoto , Masanao Ochiai , Akinori Yoneda
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1082 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S2301/18
摘要： To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, the laminate structure having a waveguide region to guide a light and resonator planes for laser oscillation on both ends, characterized in that the laminate structure has a non-resonator plane on one end side and the non-resonator plane is covered with a shading layer.
摘要翻译：为了提供一种没有纹波的半导体激光器件，并且在高输出操作时能够提供具有接近高斯分布的图案的更好的FFP，所述半导体激光器包括层压结构，其中第一导电类型半导体层，有源层和与第一导电类型不同的第二导电类型半导体层按顺序层叠，该层压结构具有用于引导光的波导区域和两端的用于激光振荡的谐振器平面，其特征在于，所述层叠结构具有非谐振器平面在一端侧，非谐振器平面被遮光层覆盖。

5. 发明授权

US07149233B2 Semiconductor laser device and its manufacturing method 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07149233B2
公开(公告)日：2006-12-12
申请号：US10480825
申请日：2002-06-12
申请人： Yoshihiko Furukawa , Makoto Shimada , Akiyoshi Kinouchi , Masanao Ochiai , Masayuki Senoh
发明人： Yoshihiko Furukawa , Makoto Shimada , Akiyoshi Kinouchi , Masanao Ochiai , Masayuki Senoh
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0203 , H01S5/0282 , H01S5/0286 , H01S5/1082 , H01S2301/18
摘要： A semiconductor laser device have, on a substrate, a semiconductor layer including an active layer sandwiched between an n-type layer and a p-type layer, the semiconductor layer having a sonator face formed by etching and a projection projecting out in an emission direction relatively to the resonator face, wherein a protective film is formed to extend from the resonator face to an end face of the projection, and, an emission critical angle, which is the largest angle at which light emitted from the resonator face can be radiated without being blocked by the projection and the protective film formed on the projection, is larger than an emission half-angle of an emission distribution in a vertical direction of a laser beam emitted from the resonator face.
摘要翻译：半导体激光器件在衬底上具有包含夹在n型层和p型层之间的有源层的半导体层，该半导体层具有通过蚀刻形成的超声波表面和沿发射方向突出的突出部相对于谐振器面，其中保护膜形成为从谐振器面延伸到突起的端面，并且作为从谐振器面发射的光的最大角度的发射临界角可以在没有被形成在突起上的突起和保护膜阻挡，大于从谐振器面发射的激光束的垂直方向上的发射分布的发射半角。

6. 发明申请

US20060256825A1 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US20060256825A1
公开(公告)日：2006-11-16
申请号：US10563811
申请日：2004-07-09
申请人： Hiroaki Matsumura , Masanao Ochiai
发明人： Hiroaki Matsumura , Masanao Ochiai
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： H01S5/20 , H01S5/028 , H01S5/32341
摘要： A nitride semiconductor laser device comprises a nitride semiconductor substrate (101); a nitride semiconductor lamination structure that has an n-type semiconductor layer (102), an active layer (104) and a p-type semiconductor layer (103) laminated on or above the nitride semiconductor substrate (101), and has a stripe-shaped waveguide region for laser light; and end surface protective films (110) on the both end surfaces substantially perpendicular to the waveguide region. In the nitride semiconductor laser device, the nitride semiconductor substrate (101) has a luminescent radiation region (112) that absorbs light emitted from the active layer (104) and emits luminescent radiation with a wavelength longer than the wavelength of the emitted light, and the end surface protective films (110) have a high reflectivity for the wavelength of the luminescent radiation from the luminescent radiation region (112). Accordingly, a nitride semiconductor laser device that does not improperly operate and has excellent FFP is provided.
摘要翻译：氮化物半导体激光器件包括氮化物半导体衬底（101）; 具有层叠在氮化物半导体基板（101）上或上方的n型半导体层（102），有源层（104）和p型半导体层（103）的氮化物半导体层叠结构体，激光光波导区域; 和在基本上垂直于波导区域的两个端面上的端面保护膜（110）。在氮化物半导体激光装置中，氮化物半导体基板（101）具有吸收从有源层（104）发射的光并发射长于发光的波长的发光的发光的发光区域（112），端面保护膜（110）对于来自发光辐射区域（112）的发光辐射的波长具有高反射率。因此，提供了不正确操作且具有优异FFP的氮化物半导体激光器件。

7. 发明授权

US07796663B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07796663B2
公开(公告)日：2010-09-14
申请号：US11494447
申请日：2006-07-28
申请人： Yasunobu Sugimoto , Masanao Ochiai , Akinori Yoneda
发明人： Yasunobu Sugimoto , Masanao Ochiai , Akinori Yoneda
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1082 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S2301/18
摘要： To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, the laminate structure having a waveguide region to guide a light and resonator planes for laser oscillation on both ends, characterized in that the laminate structure has a non-resonator plane on one end side and the non-resonator plane is covered with a shading layer.
摘要翻译：为了提供一种没有纹波的半导体激光器件，并且在高输出操作时能够提供具有接近高斯分布的图案的更好的FFP，所述半导体激光器包括层压结构，其中第一导电类型半导体层，有源层和与第一导电类型不同的第二导电类型半导体层按顺序层叠，该层压结构具有用于引导光的波导区域和两端的用于激光振荡的谐振器平面，其特征在于，所述层叠结构具有非谐振器平面在一端侧，非谐振器平面被遮光层覆盖。

8. 发明授权

US07609737B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07609737B2
公开(公告)日：2009-10-27
申请号：US10563811
申请日：2004-07-09
申请人： Hiroaki Matsumura , Masanao Ochiai
发明人： Hiroaki Matsumura , Masanao Ochiai
IPC分类号： H01S3/04
CPC分类号： H01S5/20 , H01S5/028 , H01S5/32341
摘要： A nitride semiconductor laser device comprises a nitride semiconductor substrate (101); a nitride semiconductor lamination structure that has an n-type semiconductor layer (102), an active layer (104) and a p-type semiconductor layer (103) laminated on or above the nitride semiconductor substrate (101), and has a stripe-shaped waveguide region for laser light; and end surface protective films (110) on the both end surfaces substantially perpendicular to the waveguide region. In the nitride semiconductor laser device, the nitride semiconductor substrate (101) has a luminescent radiation region (112) that absorbs light emitted from the active layer (104) and emits luminescent radiation with a wavelength longer than the wavelength of the emitted light, and the end surface protective films (110) have a high reflectivity for the wavelength of the luminescent radiation from the luminescent radiation region (112). Accordingly, a nitride semiconductor laser device that does not improperly operate and has excellent FFP is provided.
摘要翻译：氮化物半导体激光器件包括氮化物半导体衬底（101）; 具有层叠在氮化物半导体基板（101）上或上方的n型半导体层（102），有源层（104）和p型半导体层（103）的氮化物半导体层叠结构体，激光光波导区域; 和在基本上垂直于波导区域的两个端面上的端面保护膜（110）。在氮化物半导体激光装置中，氮化物半导体基板（101）具有吸收从有源层（104）发射的光并发射比发光的波长长的发光的发光的发光区域（112），端面保护膜（110）对于来自发光辐射区域（112）的发光辐射的波长具有高反射率。因此，提供了不正确操作且具有优异FFP的氮化物半导体激光器件。

9. 发明授权

US07103082B2 Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：US07103082B2
公开(公告)日：2006-09-05
申请号：US10479231
申请日：2002-05-31
申请人： Yasunobu Sugimoto , Masanao Ochiai , Akinori Yoneda
发明人： Yasunobu Sugimoto , Masanao Ochiai , Akinori Yoneda
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1082 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S2301/18
摘要： To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, the laminate structure having a waveguide region to guide a light and resonator planes for laser oscillation on both ends, characterized in that the laminate structure has a non-resonator plane on one end side and the non-resonator plane is covered with a shading layer.
摘要翻译：为了提供一种没有纹波的半导体激光器件，并且在高输出操作时能够提供具有接近高斯分布的图案的更好的FFP，所述半导体激光器包括层压结构，其中第一导电类型半导体层，有源层和与第一导电类型不同的第二导电类型半导体层按顺序层叠，该层压结构具有用于引导光的波导区域和两端的用于激光振荡的谐振器平面，其特征在于，所述层叠结构具有非谐振器平面在一端侧，非谐振器平面被遮光层覆盖。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式