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1. 发明授权

US07149233B2 Semiconductor laser device and its manufacturing method 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07149233B2
公开(公告)日：2006-12-12
申请号：US10480825
申请日：2002-06-12
申请人： Yoshihiko Furukawa , Makoto Shimada , Akiyoshi Kinouchi , Masanao Ochiai , Masayuki Senoh
发明人： Yoshihiko Furukawa , Makoto Shimada , Akiyoshi Kinouchi , Masanao Ochiai , Masayuki Senoh
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0203 , H01S5/0282 , H01S5/0286 , H01S5/1082 , H01S2301/18
摘要： A semiconductor laser device have, on a substrate, a semiconductor layer including an active layer sandwiched between an n-type layer and a p-type layer, the semiconductor layer having a sonator face formed by etching and a projection projecting out in an emission direction relatively to the resonator face, wherein a protective film is formed to extend from the resonator face to an end face of the projection, and, an emission critical angle, which is the largest angle at which light emitted from the resonator face can be radiated without being blocked by the projection and the protective film formed on the projection, is larger than an emission half-angle of an emission distribution in a vertical direction of a laser beam emitted from the resonator face.
摘要翻译：半导体激光器件在衬底上具有包含夹在n型层和p型层之间的有源层的半导体层，该半导体层具有通过蚀刻形成的超声波表面和沿发射方向突出的突出部相对于谐振器面，其中保护膜形成为从谐振器面延伸到突起的端面，并且作为从谐振器面发射的光的最大角度的发射临界角可以在没有被形成在突起上的突起和保护膜阻挡，大于从谐振器面发射的激光束的垂直方向上的发射分布的发射半角。

2. 发明授权

US07939836B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US07939836B2
公开(公告)日：2011-05-10
申请号：US12216464
申请日：2008-07-03
申请人： Akinori Yoneda , Akiyoshi Kinouchi
发明人： Akinori Yoneda , Akiyoshi Kinouchi
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/20
摘要： A semiconductor light emitting element having a rectangular shape in plan view comprising at least a first side and a second side adjacent to the first side, the semiconductor light emitting element including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a plurality of first electrodes having a long shape along the first side and being arranged on the first conductivity-type semiconductor layer in a lattice form of x columns (x≧2) along the first side and y rows (y>x) along the second side, and a second electrode arranged on the second conductivity-type semiconductor layer. The first electrode and the second electrode are arranged on the same surface side. The first electrode is surrounded by the first conductivity-type semiconductor layer, the second conductivity-type semiconductor layer, and the second electrode is provided.
摘要翻译：一种半导体发光元件，其平面图具有至少第一侧和与该第一侧相邻的第二侧的平面图形，该半导体发光元件包括第一导电型半导体层，第二导电型半导体层，多个沿着第一侧具有长形状的第一电极，沿着第一侧以x列（x≥2）的格子形式布置在第一导电类型半导体层上，沿着第一侧沿y列（y> x）排列第二侧和布置在第二导电类型半导体层上的第二电极。第一电极和第二电极布置在同一表面侧。第一电极被第一导电型半导体层，第二导电型半导体层和第二电极包围。

3. 发明申请

US20080258158A1 LIGHT EMISSION DEVICE 有权
标题翻译：光发射装置
公开(公告)号：US20080258158A1
公开(公告)日：2008-10-23
申请号：US12105058
申请日：2008-04-17
申请人： Akinori YONEDA , Akiyoshi Kinouchi , Hirofumi Kawaguchi
发明人： Akinori YONEDA , Akiyoshi Kinouchi , Hirofumi Kawaguchi
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： A light emission device includes a plurality of semiconductor light emitting elements and a supporting substrate on which the plurality of semiconductor light emitting elements are flip-chip mounted. Each of the plurality of semiconductor light emitting elements has a substantially rectangular shape which has a first side and a second side different from the first side. Light emitted from a first element end face on the first side is stronger than light emitted from a second element end face on the second side. Each first side of each of the plurality of semiconductor light emitting elements faces each other substantially in parallel.
摘要翻译：发光装置包括多个半导体发光元件和支撑基板，多个半导体发光元件在其上倒装芯片安装。多个半导体发光元件中的每一个具有大致矩形形状，其具有与第一侧不同的第一侧和第二侧。从第一侧的第一元件端面发射的光比在第二侧的第二元件端面发射的光强。多个半导体发光元件中的每一个的每个第一侧基本上彼此面对。

4. 发明授权

US08174033B2 Light emission device including semiconductor light emitting elements 有权
标题翻译：发光装置，包括半导体发光元件
公开(公告)号：US08174033B2
公开(公告)日：2012-05-08
申请号：US12105058
申请日：2008-04-17
申请人： Akinori Yoneda , Akiyoshi Kinouchi , Hirofumi Kawaguchi
发明人： Akinori Yoneda , Akiyoshi Kinouchi , Hirofumi Kawaguchi
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： A light emission device includes a plurality of semiconductor light emitting elements and a supporting substrate on which the plurality of semiconductor light emitting elements are flip-chip mounted. Each of the plurality of semiconductor light emitting elements has a substantially rectangular shape which has a first side and a second side different from the first side. Light emitted from a first element end face on the first side is stronger than light emitted from a second element end face on the second side. Each first side of each of the plurality of semiconductor light emitting elements faces each other substantially in parallel.
摘要翻译：发光装置包括多个半导体发光元件和支撑基板，多个半导体发光元件在其上倒装芯片安装。多个半导体发光元件中的每一个具有大致矩形形状，其具有与第一侧不同的第一侧和第二侧。从第一侧的第一元件端面发射的光比在第二侧的第二元件端面发射的光强。多个半导体发光元件中的每一个的每个第一侧基本上彼此面对。

5. 发明申请

US20090020769A1 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US20090020769A1
公开(公告)日：2009-01-22
申请号：US12216464
申请日：2008-07-03
申请人： Akinori Yoneda , Akiyoshi Kinouchi
发明人： Akinori Yoneda , Akiyoshi Kinouchi
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/20
摘要： A semiconductor light emitting element having a rectangular shape in plan view comprising at least a first side and a second side adjacent to the first side, the semiconductor light emitting element including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a plurality of first electrodes having a long shape along the first side and being arranged on the first conductivity-type semiconductor layer in a lattice form of x columns (x≧2) along the first side and y rows (y>x) along the second side, and a second electrode arranged on the second conductivity-type semiconductor layer. The first electrode and the second electrode are arranged on the same surface side. The first electrode is surrounded by the first conductivity-type semiconductor layer, the second conductivity-type semiconductor layer, and the second electrode is provided.
摘要翻译：一种半导体发光元件，其平面图具有至少第一侧和与该第一侧相邻的第二侧的平面图形，该半导体发光元件包括第一导电型半导体层，第二导电型半导体层，多个沿着第一侧具有长形状的第一电极，沿着第一侧以y列（y> x）的x列（x> = 2）的格子形式布置在第一导电类型半导体层上第二侧和布置在第二导电类型半导体层上的第二电极。第一电极和第二电极布置在同一表面侧。第一电极被第一导电型半导体层，第二导电型半导体层和第二电极包围。

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