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1. 发明申请

US20060091417A1 Nitride semiconductor device 有权
公开(公告)号：US20060091417A1
公开(公告)日：2006-05-04
申请号：US11311242
申请日：2005-12-20
申请人： Yasunobu Sugimoto , Akinori Yoneda
发明人： Yasunobu Sugimoto , Akinori Yoneda
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/38 , H01L33/387 , H01S5/0425 , H01S5/22
摘要： A nitride semiconductor device includes a semiconductor layer, a first electrode for establishing an ohmic contact disposed on the semiconductor layer, and a second electrode on the first electrode, having a different shape from that of the first electrode. A joint region is formed with the upper layer of the first electrode and the lower layer of the second electrode. The joint region comprises an element of the platinum group.

2. 发明申请

US20120058585A1 METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：制造氮化物半导体激光元件的方法
公开(公告)号：US20120058585A1
公开(公告)日：2012-03-08
申请号：US13225935
申请日：2011-09-06
申请人： Hitoshi MAEGAWA , Mitsuhiro NONAKA , Yasunobu SUGIMOTO
发明人： Hitoshi MAEGAWA , Mitsuhiro NONAKA , Yasunobu SUGIMOTO
IPC分类号： H01L33/26
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/2201 , H01S5/222 , H01S5/3216 , H01S5/34333 , H01S2301/176 , H01S2304/04
摘要： A method for manufacturing a nitride semiconductor laser element has: (a) forming a nitride semiconductor layer on a substrate; (b) forming a ridge on a surface of the nitride semiconductor; (c) forming a first protective film on the nitride semiconductor layer including the ridge; (d) removing the first protective film from at least a top face of the ridge; (e) forming a conductive layer composed of a two or more of multilayer film with different compositions on the first protective film and the nitride semiconductor layer including the ridge, and introducing a gap at locations of at least at the uppermost conductive layer corresponding to the base portion from the ridge shoulders; and (f) removing part of the conductive layer through a gap to form a void defined the first protective film and the conductive layer at least on the ridge base portions.
摘要翻译：一种氮化物半导体激光元件的制造方法具有：（a）在基板上形成氮化物半导体层; （b）在氮化物半导体的表面上形成脊; （c）在包括所述脊的所述氮化物半导体层上形成第一保护膜; （d）从所述脊的至少顶面去除所述第一保护膜; （e）在第一保护膜和包括脊的氮化物半导体层上形成由两种或更多种具有不同组成的多层膜组成的导电层，并且在至少在与第二保护膜相对应的最上层的导电层的位置处引入间隙从山脊的基部; 以及（f）通过间隙去除所述导电层的一部分，以至少在所述脊基部上形成限定所述第一保护膜和所述导电层的空隙。

3. 发明申请

US20060262823A1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20060262823A1
公开(公告)日：2006-11-23
申请号：US11494447
申请日：2006-07-28
申请人： Yasunobu Sugimoto , Masanao Ochiai , Akinori Yoneda
发明人： Yasunobu Sugimoto , Masanao Ochiai , Akinori Yoneda
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1082 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S2301/18
摘要： To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, the laminate structure having a waveguide region to guide a light and resonator planes for laser oscillation on both ends, characterized in that the laminate structure has a non-resonator plane on one end side and the non-resonator plane is covered with a shading layer.
摘要翻译：为了提供一种没有纹波的半导体激光器件，并且在高输出操作时能够提供具有接近高斯分布的图案的更好的FFP，所述半导体激光器包括层压结构，其中第一导电类型半导体层，有源层和与第一导电类型不同的第二导电类型半导体层按顺序层叠，该层压结构具有用于引导光的波导区域和两端的用于激光振荡的谐振器平面，其特征在于，所述层叠结构具有非谐振器平面在一端侧，非谐振器平面被遮光层覆盖。

4. 发明授权

US08415188B2 Method for manufacturing nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件的制造方法
公开(公告)号：US08415188B2
公开(公告)日：2013-04-09
申请号：US13225935
申请日：2011-09-06
申请人： Hitoshi Maegawa , Mitsuhiro Nonaka , Yasunobu Sugimoto
发明人： Hitoshi Maegawa , Mitsuhiro Nonaka , Yasunobu Sugimoto
IPC分类号： H01L33/26
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/2201 , H01S5/222 , H01S5/3216 , H01S5/34333 , H01S2301/176 , H01S2304/04
摘要： A method for manufacturing a nitride semiconductor laser element has: (a) forming a nitride semiconductor layer on a substrate; (b) forming a ridge on a surface of the nitride semiconductor; (c) forming a first protective film on the nitride semiconductor layer including the ridge; (d) removing the first protective film from at least a top face of the ridge; (e) forming a conductive layer composed of a two or more of multilayer film with different compositions on the first protective film and the nitride semiconductor layer including the ridge, and introducing a gap at locations of at least at the uppermost conductive layer corresponding to the base portion from the ridge shoulders; and (f) removing part of the conductive layer through a gap to form a void defined by the first protective film and the conductive layer at least on the ridge base portions.
摘要翻译：一种氮化物半导体激光元件的制造方法具有：（a）在基板上形成氮化物半导体层; （b）在氮化物半导体的表面上形成脊; （c）在包括所述脊的所述氮化物半导体层上形成第一保护膜; （d）从所述脊的至少顶面去除所述第一保护膜; （e）在第一保护膜和包括脊的氮化物半导体层上形成由两种或更多种具有不同组成的多层膜组成的导电层，并且在至少在与第二保护膜相对应的最上层的导电层的位置处引入间隙从山脊的基部; 和（f）通过间隙去除导电层的一部分，以至少在脊基部上形成由第一保护膜和导电层限定的空隙。

5. 发明授权

US07009218B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07009218B2
公开(公告)日：2006-03-07
申请号：US10780849
申请日：2004-02-19
申请人： Yasunobu Sugimoto , Akinori Yoneda
发明人： Yasunobu Sugimoto , Akinori Yoneda
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/38 , H01L33/387 , H01S5/0425 , H01S5/22
摘要： A nitride semiconductor device includes a semiconductor layer, a first electrode for establishing an ohmic contact disposed on the semiconductor layer, and a second electrode on the first electrode, having a different shape from that of the first electrode. A joint region is formed with the upper layer of the first electrode and the lower layer of the second electrode. The joint region comprises an element of the platinum group.
摘要翻译：氮化物半导体器件包括半导体层，用于建立设置在半导体层上的欧姆接触的第一电极以及与第一电极的形状不同的第一电极上的第二电极。接合区域形成有第一电极的上层和第二电极的下层。接合区域包括铂族元素。

6. 发明授权

US07796663B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07796663B2
公开(公告)日：2010-09-14
申请号：US11494447
申请日：2006-07-28
申请人： Yasunobu Sugimoto , Masanao Ochiai , Akinori Yoneda
发明人： Yasunobu Sugimoto , Masanao Ochiai , Akinori Yoneda
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1082 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S2301/18
摘要： To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, the laminate structure having a waveguide region to guide a light and resonator planes for laser oscillation on both ends, characterized in that the laminate structure has a non-resonator plane on one end side and the non-resonator plane is covered with a shading layer.
摘要翻译：为了提供一种没有纹波的半导体激光器件，并且在高输出操作时能够提供具有接近高斯分布的图案的更好的FFP，所述半导体激光器包括层压结构，其中第一导电类型半导体层，有源层和与第一导电类型不同的第二导电类型半导体层按顺序层叠，该层压结构具有用于引导光的波导区域和两端的用于激光振荡的谐振器平面，其特征在于，所述层叠结构具有非谐振器平面在一端侧，非谐振器平面被遮光层覆盖。

7. 发明授权

US07323724B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07323724B2
公开(公告)日：2008-01-29
申请号：US11311242
申请日：2005-12-20
申请人： Yasunobu Sugimoto , Akinori Yoneda
发明人： Yasunobu Sugimoto , Akinori Yoneda
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/38 , H01L33/387 , H01S5/0425 , H01S5/22
摘要： A nitride semiconductor device includes a semiconductor layer, a first electrode for establishing an ohmic contact disposed on the semiconductor layer, and a second electrode on the first electrode, having a different shape from that of the first electrode. A joint region is formed with the upper layer of the first electrode and the lower layer of the second electrode. The joint region comprises an element of the platinum group.
摘要翻译：氮化物半导体器件包括半导体层，用于建立设置在半导体层上的欧姆接触的第一电极以及与第一电极的形状不同的第一电极上的第二电极。接合区域形成有第一电极的上层和第二电极的下层。接合区域包括铂族元素。

8. 发明授权

US07103082B2 Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：US07103082B2
公开(公告)日：2006-09-05
申请号：US10479231
申请日：2002-05-31
申请人： Yasunobu Sugimoto , Masanao Ochiai , Akinori Yoneda
发明人： Yasunobu Sugimoto , Masanao Ochiai , Akinori Yoneda
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1082 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S2301/18
摘要： To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, the laminate structure having a waveguide region to guide a light and resonator planes for laser oscillation on both ends, characterized in that the laminate structure has a non-resonator plane on one end side and the non-resonator plane is covered with a shading layer.
摘要翻译：为了提供一种没有纹波的半导体激光器件，并且在高输出操作时能够提供具有接近高斯分布的图案的更好的FFP，所述半导体激光器包括层压结构，其中第一导电类型半导体层，有源层和与第一导电类型不同的第二导电类型半导体层按顺序层叠，该层压结构具有用于引导光的波导区域和两端的用于激光振荡的谐振器平面，其特征在于，所述层叠结构具有非谐振器平面在一端侧，非谐振器平面被遮光层覆盖。

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