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1. 发明授权

US4756478A Vibrating element for use on an ultrasonic injection nozzle 失效
标题翻译：用于超声波注射喷嘴的振动元件
公开(公告)号：US4756478A
公开(公告)日：1988-07-12
申请号：US807134
申请日：1985-12-06
申请人： Masami Endo , Kakuro Kokubo , Hideo Hirabayashi , Yoshinobu Nakamura , Daijiro Hosogai
发明人： Masami Endo , Kakuro Kokubo , Hideo Hirabayashi , Yoshinobu Nakamura , Daijiro Hosogai
IPC分类号： F23D11/34 , B05B17/06 , B06B1/06 , F02M27/08 , F02M51/06 , F02M61/00 , F02M61/04 , F23R3/28 , B05B1/08
CPC分类号： B05B17/063 , B05B17/0623 , F02M61/042
摘要： The present invention is directed to the combination of a vibrating element and an ultrasonic nozzle having an ultrasonic vibrator. The combination includes a body having a liquid supply passage therethrough and a chamber having a first and second end. The liquid supply passage is in communication with the chamber via its first end. The second end of the chamber defines an opening. An inner peripheral wall forms a portion of the chamber intermediate the first and second end. A multistepped edged portion is formed on the inner peripheral wall and each step defines an edge which severs and atomizes the liquid which cascades thereover from the liquid passage.
摘要翻译：本发明涉及振动元件和具有超声波振动器的超声波喷嘴的组合。该组合包括具有穿过其中的液体供应通道的主体和具有第一和第二端的室。液体供应通道经由其第一端与腔室连通。腔室的第二端限定开口。内周壁在第一和第二端的中间形成腔室的一部分。在内周壁上形成有多边缘的边缘部分，并且每个台阶限定了边缘，该边缘使液体从液体通道上层叠而液化。

2. 发明授权

US4733820A Vibrating element for use on an ultrasonic injection nozzle 失效
标题翻译：用于超声波注射喷嘴的振动元件
公开(公告)号：US4733820A
公开(公告)日：1988-03-29
申请号：US807133
申请日：1985-12-06
申请人： Masami Endo , Kakuro Kokubo , Hideo Hirabayashi , Yoshinobu Nakamura , Daijiro Hosogai
发明人： Masami Endo , Kakuro Kokubo , Hideo Hirabayashi , Yoshinobu Nakamura , Daijiro Hosogai
IPC分类号： B05B17/06 , B06B1/06 , F02M27/08 , F02M51/06 , F02M61/00 , F02M69/04 , F23D11/34 , F23R3/28 , B05B3/14
CPC分类号： F02M69/041 , B05B17/0623 , F23D11/345
摘要： This invention consists of a vibration element for use on an ultrasonic injection nozzle, the vibrating element being formed around its outer periphery with a multi-stepped edged portion having one or more projecting steps each defining an edge, the edges having the same diameter and the edged portion being adapted to be supplied with liquid.
摘要翻译：本发明包括用于超声波注射喷嘴的振动元件，所述振动元件围绕其外周边形成有多台阶边缘部分，所述多台阶边缘部分具有一个或多个突出台阶，每个突出台阶限定边缘，所述边缘具有相同的直径，边缘部分适于供应液体。

3. 发明授权

US4726523A Ultrasonic injection nozzle 失效
标题翻译：超声波注射喷嘴
公开(公告)号：US4726523A
公开(公告)日：1988-02-23
申请号：US806166
申请日：1985-12-06
申请人： Kakuro Kokubo , Masami Endo , Hideo Hirabayashi , Yoshinobu Nakamura , Daijiro Hosogai
发明人： Kakuro Kokubo , Masami Endo , Hideo Hirabayashi , Yoshinobu Nakamura , Daijiro Hosogai
IPC分类号： B05B17/06 , F02M69/04 , F23D11/34 , B05B3/00
CPC分类号： F02M69/041 , B05B17/0623 , F23D11/345
摘要： An ultrasonic injection nozzle includes an ultrasonic generator, an elongated vibrating element, a liquid feeder and a solenoid valve. The vibrating element has a first and second end. The generator is connected to the first end. A multi-stepped edge portion is connected to the second end. Each step of the edged portion defines an edge. The liquid feeder is located adjacent the second end. The solenoid valve is in communication with the liquid feeder.
摘要翻译：超声波注入喷嘴包括超声波发生器，细长振动元件，液体供给器和电磁阀。振动元件具有第一和第二端。发电机连接到第一端。多级边缘部分连接到第二端。边缘部分的每个步骤限定边缘。液体供给器位于第二端附近。电磁阀与液体进料器连通。

4. 发明授权

US09136114B2 Method of manufacturing semiconductor device, substrate processing method, computer-readable medium with program for executing a substrate processing method, and substrate processing apparatus 有权
标题翻译：制造半导体器件的方法，衬底处理方法，具有用于执行衬底处理方法的程序的计算机可读介质和衬底处理设备
公开(公告)号：US09136114B2
公开(公告)日：2015-09-15
申请号：US13883093
申请日：2011-11-01
申请人： Ryota Sasajima , Yoshinobu Nakamura , Yushin Takasawa , Yoshiro Hirose
发明人： Ryota Sasajima , Yoshinobu Nakamura , Yushin Takasawa , Yoshiro Hirose
IPC分类号： H01L21/31 , H01L21/02 , C23C16/30 , C23C16/455
CPC分类号： H01L21/02565 , C23C16/308 , C23C16/45546 , H01L21/0214 , H01L21/02211 , H01L21/02274 , H01L21/0228
摘要： A method of manufacturing a semiconductor device is provided, including: forming an oxynitride film having a specific film thickness on a substrate by performing multiple numbers of times a cycle of: forming a specific element-containing layer on the substrate by supplying a source gas containing a specific element into a processing vessel in which the substrate is housed; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas into the processing vessel; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas and an inert gas into the processing vessel, with this sequence as one cycle, wherein a composition ratio of the oxynitride film having the specific film thickness is controlled by controlling a partial pressure of the oxygen-containing gas in the processing vessel, in changing the nitride layer to the oxynitride layer.
摘要翻译：提供了一种制造半导体器件的方法，包括：通过多次循环，在基片上形成具有特定膜厚度的氧氮化物膜，该循环是：在基片上形成特定的含有元素的层，将特定元件装入容纳基板的处理容器中; 通过向所述处理容器供给含氮气体，将所述特定含有元素的层改变为氮化物层; 并且通过将该含氧气体和惰性气体供给到处理容器中，以该顺序为一个循环，将氮化物层变更为氧氮化物层，其中通过控制具有特定膜厚度的氮氧化物膜的组成比来控制在将氮化物层改变为氮氧化物层时，处理容器中含氧气体的分压。

5. 发明授权

US08546272B2 Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法，基板的处理方法及基板处理装置
公开(公告)号：US08546272B2
公开(公告)日：2013-10-01
申请号：US13083022
申请日：2011-04-08
申请人： Yoshiro Hirose , Yushin Takasawa , Tsukasa Kamakura , Yoshinobu Nakamura , Ryota Sasajima
发明人： Yoshiro Hirose , Yushin Takasawa , Tsukasa Kamakura , Yoshinobu Nakamura , Ryota Sasajima
IPC分类号： H01L21/316
CPC分类号： H01L21/67069 , C23C16/30 , C23C16/45531 , C23C16/45546 , H01L21/02104 , H01L21/02126 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/0223 , H01L21/02247 , H01L21/0228 , H01L21/67011 , H01L21/67017
摘要： An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film having a predetermined thickness is formed on a substrate in a process vessel by performing a cycle a predetermined number of times, wherein the cycle includes steps of: (a) performing a set of steps a predetermined number of times to form a carbonitride layer having a predetermined thickness on the substrate; and (b) supplying an oxygen-containing gas into the process vessel to oxidize the carbonitride layer having the predetermined thickness, thereby forming an oxycarbonitride layer, wherein the set of steps includes: (a-1) supplying a gas containing an element into the process vessel accommodating the substrate under a condition where a CVD reaction is caused to form a layer containing the element on the substrate; (a-2) supplying a carbon-containing gas into the process vessel to form a carbon-containing layer on the layer containing the element, thereby forming a layer including the element and a carbon; and (a-3) supplying a nitrogen-containing gas into the process vessel to nitride the layer including the element and the carbon, thereby forming the carbonitride layer.
摘要翻译：形成具有低介电常数，低蚀刻速率和高绝缘性等特征的绝缘膜。通过执行预定次数的循环，在处理容器中的基板上形成具有预定厚度的碳氮氧化物膜，其中该循环包括以下步骤：（a）执行预定次数的一组步骤以形成碳氮化物在基板上具有预定厚度的层; 和（b）向处理容器供应含氧气体以氧化具有预定厚度的碳氮化物层，从而形成碳氮氧化物层，其中该步骤包括：（a-1）将含有元素的气体供应到在使CVD反应形成含有该元素的层的状态下容纳基板的处理容器; （a-2）将含碳气体供给到处理容器中，在含有该元素的层上形成含碳层，从而形成包含该元素和碳的层; 和（a-3）将含氮气体供给到处理容器中以氮化包括元素和碳的层，从而形成碳氮化物层。

6. 发明授权

US08253950B2 Recording material moving device to position a record material within a movable range of a predetermined width and image forming device 有权
标题翻译：记录材料移动装置，用于将记录材料定位在预定宽度的可移动范围内并且成像装置
公开(公告)号：US08253950B2
公开(公告)日：2012-08-28
申请号：US12332033
申请日：2008-12-10
申请人： Toshiyuki Kazama , Ryoji Watanabe , Shouichi Maeda , Makoto Ochiai , Tatsunori Izawa , Naoto Nishi , Yoshinobu Nakamura , Satoshi Kanou , Shun Yashima , Michio Tada
发明人： Toshiyuki Kazama , Ryoji Watanabe , Shouichi Maeda , Makoto Ochiai , Tatsunori Izawa , Naoto Nishi , Yoshinobu Nakamura , Satoshi Kanou , Shun Yashima , Michio Tada
IPC分类号： G06K15/00 , G06K1/00
CPC分类号： H04N1/053 , H04N1/12 , H04N2201/02439 , H04N2201/04712 , H04N2201/04734 , H04N2201/04737 , H04N2201/04756 , H04N2201/04794
摘要： A recording material moving device comprises: a position adjuster that moves a recording material in a direction which is parallel to a recording surface of the recording material and orthogonal to a transporting direction, in an upstream side of a recording position along the transport direction of the recording material; a reference position specifying unit that specifies a reference position; a determination unit that determines whether a range of a predetermined width centered on the reference position exceeds a movable range of the recording material within which the recording material can be moved by the position adjuster; and a controller that causes, if the determination unit determines that the movable range is not exceeded, the position adjuster to sequentially move the recording material within the movable range of the predetermined width centered on the reference position each time a condition for moving the recording material is satisfied.
摘要翻译：记录材料移动装置包括：位置调节器，其沿着沿着记录材料的传送方向在记录位置的上游侧沿着与记录材料的记录表面平行的方向并且与传送方向垂直的方向移动记录材料录音材料; 参考位置指定单元，其指定参考位置; 确定单元，其确定以所述基准位置为中心的预定宽度的范围是否超过所述记录材料的可移动范围，所述记录材料可通过所述位置调节器移动到所述可移动范围内; 以及控制器，如果所述确定单元确定未超过所述可移动范围，则所述位置调整器在每次所述记录材料的移动条件时，将所述记录材料顺序地移动到以所述基准位置为中心的所述预定宽度的可移动范围内满意

7. 发明申请

US20120184110A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件的方法，加工基板和基板处理装置的方法
公开(公告)号：US20120184110A1
公开(公告)日：2012-07-19
申请号：US13345885
申请日：2012-01-09
申请人： Yoshiro Hirose , Yushin Takasawa , Tsukasa Kamakura , Yoshinobu Nakamura , Ryota Sasajima
发明人： Yoshiro Hirose , Yushin Takasawa , Tsukasa Kamakura , Yoshinobu Nakamura , Ryota Sasajima
IPC分类号： H01L21/314 , C23C16/44
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/36 , C23C16/40 , C23C16/401 , C23C16/45523 , C23C16/45529 , C23C16/45531 , C23C16/45546 , H01L21/02112 , H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/02211
摘要： An insulating film including characteristics such as low permittivity, a low etching rate and a high insulation property is formed. Supplying a gas containing an element, a carbon-containing gas and a nitrogen-containing gas to a heated substrate in a processing vessel to form a carbonitride layer including the element, and supplying the gas containing the element and an oxygen-containing gas to the heated substrate in the processing vessel to form an oxide layer including the element are alternately repeated to form on the substrate an oxycarbonitride film having the carbonitride layer and the oxide layer alternately stacked therein.
摘要翻译：形成包括低介电常数，低蚀刻速率和高绝缘性等特性的绝缘膜。在处理容器中向加热的基板供给含有元素，含碳气体和含氮气体的气体，以形成包含该元素的碳氮化物层，并将含有元素和含氧气体的气体供给到处理容器中加热的衬底以形成包含该元件的氧化物层交替重复，以在衬底上形成具有碳氮化物层和氧化物层交替堆叠的碳氮氧化物膜。

8. 发明申请

US20090250864A1 RECORDING MEDIUM TRANSPORT APPARATUS AND IMAGE FORMING APPARATUS 有权
标题翻译：记录中型运输装置和图像形成装置
公开(公告)号：US20090250864A1
公开(公告)日：2009-10-08
申请号：US12331989
申请日：2008-12-10
申请人： Toshiyuki Kazama , Michio Tada , Ryoji Watanabe , Shouichi Maeda , Makoto Ochiai , Tatsunori Izawa , Naoto Nishi , Yoshinobu Nakamura , Satoshi Kanou , Shun Yashima
发明人： Toshiyuki Kazama , Michio Tada , Ryoji Watanabe , Shouichi Maeda , Makoto Ochiai , Tatsunori Izawa , Naoto Nishi , Yoshinobu Nakamura , Satoshi Kanou , Shun Yashima
IPC分类号： B65H5/00
CPC分类号： B65H7/10 , B65H2511/20 , B65H2553/416 , B65H2557/23 , B65H2701/1315 , B65H2801/06 , G03G15/235 , G03G15/6561 , G03G2215/00409 , G03G2215/00599 , G03G2215/00616 , G03G2215/00721 , B65H2220/03 , B65H2220/01 , B65H2220/02
摘要： A recording medium transport apparatus includes: plural storage units each storing a recording medium; a transport unit that transports the recording medium from one of the storage units to a recording position where an image is recorded on the recording medium; a memory that stores a reference position of a recording medium prescribed for each storage unit; a measuring unit that measures a position of the transported recording medium; and a movement unit that reads the reference position corresponding to the storage unit that stored the transported recording medium, from the memory, and moves the recording medium according to the difference between the reference position and the measured position such that the position of the recording medium approaches the reference position when the recording medium is located upstream of the recording position in the transport direction thereof.
摘要翻译：记录介质传送装置包括：多个存储单元，每个存储单元存储记录介质; 传送单元，其将记录介质从存储单元之一传送到记录介质上记录图像的记录位置; 存储器，其存储为每个存储单元规定的记录介质的参考位置; 测量所述传送的记录介质的位置的测量单元; 以及移动单元，从存储器读取对应于存储运送的记录介质的存储单元的参考位置，并且根据参考位置和测量位置之间的差异移动记录介质，使得记录介质的位置当记录介质位于记录位置的输送方向的上游时，接近基准位置。

9. 发明申请

US20070205474A1 PRESSURE SENSOR HAVING GOLD-SILICON EUTECTIC CRYSTAL LAYER INTERPOSED BETWEEN CONTACT LAYER AND SILICON SUBSTRATE 有权
标题翻译：具有接触层和硅基板之间的金属硅层保护层的压力传感器
公开(公告)号：US20070205474A1
公开(公告)日：2007-09-06
申请号：US11680970
申请日：2007-03-01
申请人： Tetsuya Fukuda , Katsuya Kikuiri , Yoshinobu Nakamura , Shigeaki Yamauchi
发明人： Tetsuya Fukuda , Katsuya Kikuiri , Yoshinobu Nakamura , Shigeaki Yamauchi
IPC分类号： H01L29/82
CPC分类号： G01L9/0073 , G01L9/0075
摘要： A pressure sensor includes a gold-silicon eutectic crystal layer interposed between the contact layer and the silicon substrate. Because the contact layer and the silicon substrate are electrically connected to each other by using a gold-silicon eutectic reaction at the time of bonding the silicon substrate and the glass substrate, a contact resistance between the contact layer and the silicon substrate can be stabilized, and a Q value of the sensor can be stabilized. In addition, since the contact layer and the silicon substrate are bonded to each other by the gold-silicon eutectic reaction, the bonding strength is sufficient.
摘要翻译：压力传感器包括介于接触层和硅衬底之间的金 - 硅共晶晶体层。由于接触层和硅衬底在接合硅衬底和玻璃衬底时通过使用金 - 硅共晶反应彼此电连接，所以可以使接触层和硅衬底之间的接触电阻稳定，并且传感器的Q值可以稳定。此外，由于接触层和硅衬底通过金 - 硅共晶反应彼此接合，所以接合强度是足够的。

10. 发明授权

US06954926B1 Label address translating device 失效
标题翻译：标签地址转换设备
公开(公告)号：US06954926B1
公开(公告)日：2005-10-11
申请号：US09502791
申请日：2000-02-11
申请人： Yoshinobu Nakamura
发明人： Yoshinobu Nakamura
IPC分类号： G06F9/45 , G06F9/48
CPC分类号： G06F9/4812 , G06F2209/481
摘要： A label address translating device includes a unit for processing a program and judging, when processing the program, whether or not an address is obtained from a label, and a label address translating unit for reading the address corresponding to the label from a label table in an exception handling, and writing the address to the program. The program, after being processed by the label address translating device, comes into a state where the label is rewritten into the address. The rewriting into the address is performed in the exception handling, and a time needed for processing (compiling) the program is reduced.
摘要翻译：标签地址转换装置包括用于处理程序的单元，在处理程序时判断是否从标签获得地址，以及标签地址转换单元，用于从标签表读取对应于标签的地址异常处理，并将该地址写入程序。该程序在由标签地址转换装置处理之后进入标签被重写到地址中的状态。在异常处理中执行对地址的重写，并且减少了处理（编译）程序所需的时间。

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