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1. 发明授权

US07462918B2 Pressure sensor having gold-silicon eutectic crystal layer interposed between contact layer and silicon substrate 有权
标题翻译：具有介于接触层和硅衬底之间的金 - 硅共晶晶体层的压力传感器
公开(公告)号：US07462918B2
公开(公告)日：2008-12-09
申请号：US11680970
申请日：2007-03-01
申请人： Tetsuya Fukuda , Katsuya Kikuiri , Yoshinobu Nakamura , Shigeaki Yamauchi
发明人： Tetsuya Fukuda , Katsuya Kikuiri , Yoshinobu Nakamura , Shigeaki Yamauchi
IPC分类号： H01L21/76
CPC分类号： G01L9/0073 , G01L9/0075
摘要： A pressure sensor includes a gold-silicon eutectic crystal layer interposed between the contact layer and the silicon substrate. Because the contact layer and the silicon substrate are electrically connected to each other by using a gold-silicon eutectic reaction at the time of bonding the silicon substrate and the glass substrate, a contact resistance between the contact layer and the silicon substrate can be stabilized, and a Q value of the sensor can be stabilized. In addition, since the contact layer and the silicon substrate are bonded to each other by the gold-silicon eutectic reaction, the bonding strength is sufficient.
摘要翻译：压力传感器包括介于接触层和硅衬底之间的金 - 硅共晶晶体层。由于接触层和硅衬底在接合硅衬底和玻璃衬底时通过使用金 - 硅共晶反应彼此电连接，所以可以使接触层和硅衬底之间的接触电阻稳定，并且传感器的Q值可以稳定。此外，由于接触层和硅衬底通过金 - 硅共晶反应彼此接合，所以接合强度是足够的。

2. 发明申请

US20070205474A1 PRESSURE SENSOR HAVING GOLD-SILICON EUTECTIC CRYSTAL LAYER INTERPOSED BETWEEN CONTACT LAYER AND SILICON SUBSTRATE 有权
标题翻译：具有接触层和硅基板之间的金属硅层保护层的压力传感器
公开(公告)号：US20070205474A1
公开(公告)日：2007-09-06
申请号：US11680970
申请日：2007-03-01
申请人： Tetsuya Fukuda , Katsuya Kikuiri , Yoshinobu Nakamura , Shigeaki Yamauchi
发明人： Tetsuya Fukuda , Katsuya Kikuiri , Yoshinobu Nakamura , Shigeaki Yamauchi
IPC分类号： H01L29/82
CPC分类号： G01L9/0073 , G01L9/0075
摘要： A pressure sensor includes a gold-silicon eutectic crystal layer interposed between the contact layer and the silicon substrate. Because the contact layer and the silicon substrate are electrically connected to each other by using a gold-silicon eutectic reaction at the time of bonding the silicon substrate and the glass substrate, a contact resistance between the contact layer and the silicon substrate can be stabilized, and a Q value of the sensor can be stabilized. In addition, since the contact layer and the silicon substrate are bonded to each other by the gold-silicon eutectic reaction, the bonding strength is sufficient.
摘要翻译：压力传感器包括介于接触层和硅衬底之间的金 - 硅共晶晶体层。由于接触层和硅衬底在接合硅衬底和玻璃衬底时通过使用金 - 硅共晶反应彼此电连接，所以可以使接触层和硅衬底之间的接触电阻稳定，并且传感器的Q值可以稳定。此外，由于接触层和硅衬底通过金 - 硅共晶反应彼此接合，所以接合强度是足够的。

3. 发明授权

US07506548B2 Pressure sensor package structure 失效
标题翻译：压力传感器封装结构
公开(公告)号：US07506548B2
公开(公告)日：2009-03-24
申请号：US11865479
申请日：2007-10-01
申请人： Tetsuya Fukuda , Katsuya Kikuiri , Kiyoshi Sato , Mitsuru Watanabe , Yoshinobu Nakamura
发明人： Tetsuya Fukuda , Katsuya Kikuiri , Kiyoshi Sato , Mitsuru Watanabe , Yoshinobu Nakamura
IPC分类号： G01L7/00
CPC分类号： G01L19/0069 , G01L19/147 , H01L2224/48091 , H01L2924/16195 , H01L2924/00014
摘要： A package is mainly formed of a package body having a storage area for storing a pressure sensor, a capacity type pressure sensor stored in the storage area of the package body, a lid seals the package body in which the pressure sensor is stored, an adhesive agent for fixing the pressure sensor to the package body, and a bonding wire for electrically coupling a bonding pad of the pressure sensor and a conductive portion of the package body. An adhesive area of the package body and the pressure sensor is set to the area other than a projection area of the diaphragm of the pressure sensor on a mount bottom surface. This makes it possible to provide the package for the pressure sensor capable of detecting the pressure with high sensitivity although the gap between the substrate and the diaphragm has the value with the magnitude of several μms.
摘要翻译：封装主要由具有用于存储压力传感器的存储区域的存储区域，存储在封装体的存储区域中的容量型压力传感器，密封保存有压力传感器的封装体的封装体，粘合剂用于将压力传感器固定到封装主体的代理，以及用于将压力传感器的焊盘电耦接到封装体的导电部分的接合线。包装体和压力传感器的粘合区域设置在除了压力传感器的隔膜的投影区域之外的区域在安装底面上。这使得可以提供能够以高灵敏度检测压力的压力传感器的封装，尽管基板和隔膜之间的间隙具有几个数量级的值。

4. 发明申请

US20070115609A1 CAPACITIVE PRESSURE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：电容式压力传感器及其制造方法
公开(公告)号：US20070115609A1
公开(公告)日：2007-05-24
申请号：US11558602
申请日：2006-11-10
申请人： Tetsuya Fukuda , Katsuya Kikuiri , Kiyoshi Sato , Yoshinobu Nakamura , Hiroyuki Kobayashi
发明人： Tetsuya Fukuda , Katsuya Kikuiri , Kiyoshi Sato , Yoshinobu Nakamura , Hiroyuki Kobayashi
IPC分类号： H01G7/00
CPC分类号： G01L9/0073
摘要： A capacitive pressure sensor and method of manufacturing the same is provided. The capactive pressure sensor includes a glass substrate that has a pair of surfaces opposite to each other. A recessed portion is provided to form a cavity on one of the pair of principal surfaces. A first protruding portion provided in the recessed portion. A first silicon substrate has a fixed electrode formed on the first protruding portion, and a movable electrode disposed with a predetermined interval between the fixed electrode and the movable electrode.
摘要翻译：提供一种电容式压力传感器及其制造方法。电容式压力传感器包括具有彼此相对的一对表面的玻璃基板。设置凹部以在一对主表面之一上形成空腔。设置在凹部中的第一突出部。第一硅衬底具有形成在第一突出部分上的固定电极和在固定电极和可动电极之间以预定间隔布置的可移动电极。

5. 发明申请

US20070095147A1 CAPACITIVE PRESSURE SENSOR 有权
标题翻译：电容式压力传感器
公开(公告)号：US20070095147A1
公开(公告)日：2007-05-03
申请号：US11553861
申请日：2006-10-27
申请人： Katsuya Kikuiri , Kiyoshi Sato , Tetsuya Fukuda , Yoshinobu Nakamura , Hiroyuki Kobayashi
发明人： Katsuya Kikuiri , Kiyoshi Sato , Tetsuya Fukuda , Yoshinobu Nakamura , Hiroyuki Kobayashi
IPC分类号： G01L9/12
CPC分类号： G01L9/0073
摘要： A capacitive pressure sensor is provided. The capacitive pressure sensor includes a glass substrate that has a pair of surfaces facing each other. A first silicon substrate has a fixed electrode passing through the glass substrate to be exposed at one surface and a projection passing through the glass substrate to be exposed at the one surface. A second silicon substrate is bonded to the one surface of the glass substrate and is disposed to face the fixed electrode so as to form a cavity between the second silicon substrate and the fixed electrode.
摘要翻译：提供电容式压力传感器。电容式压力传感器包括具有彼此面对的一对表面的玻璃基板。第一硅衬底具有穿过玻璃衬底的固定电极，以在一个表面上暴露，并且穿过玻璃衬底的突起在一个表面处露出。第二硅衬底被结合到玻璃衬底的一个表面上并且被设置为面对固定电极，以在第二硅衬底和固定电极之间形成空腔。

6. 发明授权

US07382599B2 Capacitive pressure sensor 有权
标题翻译：电容式压力传感器
公开(公告)号：US07382599B2
公开(公告)日：2008-06-03
申请号：US11553861
申请日：2006-10-27
申请人： Katsuya Kikuiri , Kiyoshi Sato , Tetsuya Fukuda , Yoshinobu Nakamura , Hiroyuki Kobayashi
发明人： Katsuya Kikuiri , Kiyoshi Sato , Tetsuya Fukuda , Yoshinobu Nakamura , Hiroyuki Kobayashi
IPC分类号： H01G7/00
CPC分类号： G01L9/0073
摘要： A capacitive pressure sensor is provided. The capacitive pressure sensor includes a glass substrate that has a pair of surfaces facing each other. A first silicon substrate has a fixed electrode passing through the glass substrate to be exposed at one surface and a projection passing through the glass substrate to be exposed at the one surface. A second silicon substrate is bonded to the one surface of the glass substrate and is disposed to face the fixed electrode so as to form a cavity between the second silicon substrate and the fixed electrode.
摘要翻译：提供电容式压力传感器。电容式压力传感器包括具有彼此面对的一对表面的玻璃基板。第一硅衬底具有穿过玻璃衬底的固定电极，以在一个表面上暴露，并且穿过玻璃衬底的突起在一个表面处露出。第二硅衬底被结合到玻璃衬底的一个表面上并且被设置为面对固定电极，以在第二硅衬底和固定电极之间形成空腔。

7. 发明申请

US20080078251A1 PRESSURE SENSOR PACKAGE STRUCTURE 失效
标题翻译：压力传感器包装结构
公开(公告)号：US20080078251A1
公开(公告)日：2008-04-03
申请号：US11865479
申请日：2007-10-01
申请人： Tetsuya Fukuda , Katsuya Kikuiri , Kiyoshi Sato , Mitsuru Watanabe , Yoshinobu Nakamura
发明人： Tetsuya Fukuda , Katsuya Kikuiri , Kiyoshi Sato , Mitsuru Watanabe , Yoshinobu Nakamura
IPC分类号： G01L7/00
CPC分类号： G01L19/0069 , G01L19/147 , H01L2224/48091 , H01L2924/16195 , H01L2924/00014
摘要： A package is mainly formed of a package body having a storage area for storing a pressure sensor, a capacity type pressure sensor stored in the storage area of the package body, a lid seals the package body in which the pressure sensor is stored, an adhesive agent for fixing the pressure sensor to the package body, and a bonding wire for electrically coupling a bonding pad of the pressure sensor and a conductive portion of the package body. An adhesive area of the package body and the pressure sensor is set to the area other than a projection area of the diaphragm of the pressure sensor on a mount bottom surface. This makes it possible to provide the package for the pressure sensor capable of detecting the pressure with high sensitivity although the gap between the substrate and the diaphragm has the value with the magnitude of several μms.
摘要翻译：封装主要由具有用于存储压力传感器的存储区域的存储区域，存储在封装体的存储区域中的容量型压力传感器，密封保存有压力传感器的封装体的封装体，粘合剂用于将压力传感器固定到封装主体的代理，以及用于将压力传感器的焊盘电耦接到封装体的导电部分的接合线。包装体和压力传感器的粘合区域设置在除了压力传感器的隔膜的投影区域之外的区域在安装底面上。这使得可以提供能够以高灵敏度检测压力的压力传感器的封装，尽管基板和隔膜之间的间隙具有几个数量级的值。

8. 发明授权

US07345867B2 Capacitive pressure sensor and method of manufacturing the same 有权
标题翻译：电容式压力传感器及其制造方法
公开(公告)号：US07345867B2
公开(公告)日：2008-03-18
申请号：US11558602
申请日：2006-11-10
申请人： Tetsuya Fukuda , Katsuya Kikuiri , Kiyoshi Sato , Yoshinobu Nakamura , Hiroyuki Kobayashi
发明人： Tetsuya Fukuda , Katsuya Kikuiri , Kiyoshi Sato , Yoshinobu Nakamura , Hiroyuki Kobayashi
IPC分类号： H01G7/00 , G01I9/12
CPC分类号： G01L9/0073
摘要： A capacitive pressure sensor and method of manufacturing the same is provided. The capactive pressure sensor includes a glass substrate that has a pair of surfaces opposite to each other. A recessed portion is provided to form a cavity on one of the pair of principal surfaces. A first protruding portion provided in the recessed portion. A first silicon substrate has a fixed electrode formed on the first protruding portion, and a movable electrode disposed with a predetermined interval between the fixed electrode and the movable electrode.
摘要翻译：提供一种电容式压力传感器及其制造方法。电容式压力传感器包括具有彼此相对的一对表面的玻璃基板。设置凹部以在一对主表面之一上形成空腔。设置在凹部中的第一突出部。第一硅衬底具有形成在第一突出部分上的固定电极和在固定电极和可动电极之间以预定间隔布置的可移动电极。

9. 发明申请

US20100164028A1 SEMICONDUCTOR PRESSURE SENSOR 有权
标题翻译：半导体压力传感器
公开(公告)号：US20100164028A1
公开(公告)日：2010-07-01
申请号：US12722079
申请日：2010-03-11
申请人： Takuya Adachi , Katsuya Kikuiri , Tetsuya Fukuda , Hisanobu Okawa , Takayuki Minagawa
发明人： Takuya Adachi , Katsuya Kikuiri , Tetsuya Fukuda , Hisanobu Okawa , Takayuki Minagawa
IPC分类号： H01L29/84
CPC分类号： H01L29/84 , G01L9/0042 , G01L9/0054
摘要： A semiconductor pressure sensor includes a cavity disposed in one silicon substrate of a SOI substrate having two silicon substrates bonded to each other with an oxide film therebetween and a diaphragm formed from the other silicon substrate and the oxide film, wherein the oxide film, bordering the cavity, of the diaphragm includes an arc-shaped section at the boundary portion to the one silicon substrate defining the inner wall side surface of the cavity, the arc-shaped section having the same diameter as the diameter of the cavity in the one silicon substrate and reducing the cavity diameter from the boundary portion toward the diaphragm center.
摘要翻译：半导体压力传感器包括设置在具有两个硅衬底的SOI衬底的一个硅衬底中的氧化膜之间具有氧化物膜的空腔和由另一硅衬底和氧化物膜形成的膜片，其中，氧化膜与隔膜的空腔包括在限定空腔的内壁侧表面的一个硅衬底的边界部分处的弧形部分，该弧形部分具有与一个硅衬底中的腔的直径相同的直径并且将腔体直径从边界部分朝向隔膜中心减小。

10. 发明授权

US08552513B2 Semiconductor pressure sensor 有权
标题翻译：半导体压力传感器
公开(公告)号：US08552513B2
公开(公告)日：2013-10-08
申请号：US12722079
申请日：2010-03-11
申请人： Takuya Adachi , Katsuya Kikuiri , Tetsuya Fukuda , Hisanobu Okawa , Takayuki Minagawa
发明人： Takuya Adachi , Katsuya Kikuiri , Tetsuya Fukuda , Hisanobu Okawa , Takayuki Minagawa
IPC分类号： H01L29/84
CPC分类号： H01L29/84 , G01L9/0042 , G01L9/0054
摘要： A semiconductor pressure sensor includes a cavity disposed in one silicon substrate of a SOI substrate having two silicon substrates bonded to each other with an oxide film therebetween and a diaphragm formed from the other silicon substrate and the oxide film, wherein the oxide film, bordering the cavity, of the diaphragm includes an arc-shaped section at the boundary portion to the one silicon substrate defining the inner wall side surface of the cavity, the arc-shaped section having the same width as the width of the cavity at a desired section in the one silicon substrate and reducing the width of the cavity from the boundary portion toward the diaphragm center.
摘要翻译：半导体压力传感器包括设置在具有两个硅衬底的SOI衬底的一个硅衬底中的氧化膜之间具有氧化物膜的空腔和由另一硅衬底和氧化物膜形成的膜片，其中，氧化膜与隔膜的空腔包括在限定空腔的内壁侧表面的一个硅衬底的边界部分处的弧形部分，该弧形部分具有与在所需部分处的空腔宽度相同的宽度一个硅衬底，并且从边界部分向隔膜中心减小空腔的宽度。

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