专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120160267A1 CLEANING METHOD AND CLEANING APPARATUS 审中-公开
标题翻译：清洁方法和清洁装置
公开(公告)号：US20120160267A1
公开(公告)日：2012-06-28
申请号：US13227280
申请日：2011-09-07
申请人： Masako KODERA , Xinming Wang , Shinji Kajita
发明人： Masako KODERA , Xinming Wang , Shinji Kajita
IPC分类号： B08B7/00 , B08B1/00
CPC分类号： B08B1/04 , H01L21/02065 , H01L21/67046
摘要： A cleaning method according to embodiments of the present invention is a cleaning method of cleaning residues from a semiconductor substrate by rotating a roll brush, the method having cleaning residues from the semiconductor substrate while pressing the roll brush against the semiconductor substrate with a first pressure of 7.35 kPa or lower, and cleaning residues from the semiconductor substrate while pressing the roll brush against the semiconductor substrate with a second pressure higher than 7.35 kPa.
摘要翻译：根据本发明的实施方案的清洁方法是通过旋转辊刷从半导体衬底清洗残留物的清洁方法，该方法具有来自半导体衬底的清洁残留物，同时将辊刷压在半导体衬底上，以第一压力 7.35kPa或更低，并且在第二压力高于7.35kPa的情况下，将辊刷在半导体衬底上挤压的同时从半导体衬底清洗残留物。

2. 发明申请

US20090107851A1 Electrolytic polishing method of substrate 审中-公开
标题翻译：基底电解抛光方法
公开(公告)号：US20090107851A1
公开(公告)日：2009-04-30
申请号：US12285615
申请日：2008-10-09
申请人： Akira Kodera , Xinming Wang , Itsuki Kobata , Yasushi Toma
发明人： Akira Kodera , Xinming Wang , Itsuki Kobata , Yasushi Toma
IPC分类号： H01L21/3063 , H01L21/67
CPC分类号： H01L21/32125 , B23H5/08 , C25F3/30
摘要： An electrolytic polishing method of a substrate having a barrier film and an interconnect metal layer on a surface to be processed under the presence of an electrolytic solution, including a barrier film electrolytic polishing process which removes the barrier film by applying a voltage between a cathode and an anode, with the surface to be processed serving as the cathode, and causing relative motion between the surface to be processed and a polishing pad which faces and makes contact with the surface to be processed.
摘要翻译：一种在电解液存在下在待加工表面上具有阻挡膜和互连金属层的基板的电解抛光方法，该方法包括：通过在阴极与阴极之间施加电压来除去阻挡膜的阻挡膜电解抛光工艺; 阳极，待处理的表面用作阴极，并且引起待处理表面与抛光垫之间的相对运动，所述抛光垫面向并与待处理表面接触。

3. 发明授权

US07498261B2 Method and apparatus for forming metal film 有权
标题翻译：用于形成金属膜的方法和装置
公开(公告)号：US07498261B2
公开(公告)日：2009-03-03
申请号：US11219777
申请日：2005-09-07
申请人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari
发明人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , C23C18/1619 , C23C18/1669 , C23C18/32 , H01L21/76846 , H01L21/76849 , H01L21/76874
摘要： A metal film-forming method of the present invention can form a metal film having different film qualities in the thickness direction, in a continuous manner using a single processing solution. The metal film-forming method including: providing a substrate having embedded interconnects formed in interconnect recesses provided in a surface of the substrate; and forming a metal film, having different film qualities in the thickness direction, on surfaces of the interconnects in a continuous manner by changing the flow state of a processing solution relative to the surface of the substrate while keeping the surface of the substrate in contact with the processing solution.
摘要翻译：本发明的金属成膜方法可以使用单一的处理液以连续的方式形成厚度方向的膜质量不同的金属膜。所述金属成膜方法包括：提供具有形成在所述基板的表面中的互连凹槽中的嵌入式互连的基板; 并且通过在保持基板的表面与基板的表面接触的同时改变处理液相对于基板的表面的流动状态，以连续的方式在相互连接的表面上形成在厚度方向上具有不同膜质量的金属膜处理方案。

4. 发明授权

US07407821B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US07407821B2
公开(公告)日：2008-08-05
申请号：US10874245
申请日：2004-06-24
申请人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Akira Fukunaga
发明人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Akira Fukunaga
IPC分类号： H01L21/66
CPC分类号： H01L21/76849 , C23C18/1608 , C23C18/1675 , C23C18/1692 , C23C18/1879 , H01L21/288 , H01L21/76864 , H01L21/76874 , H01L22/12 , H01L22/20 , H01L2223/54466
摘要： There is provided a substrate processing method and apparatus which can measure and monitor thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate having a metal and an insulating material exposed on its surface in such a manner that a film thickness of the metal, with an exposed surface of the metal as a reference plane, is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal during and/or immediately after processing, and monitoring processing and adjusting processing conditions based on results of this measurement.
摘要翻译：提供了可以根据需要测量和监测在基板上形成的膜的厚度和/或性能的基板处理方法和装置，并且可以快速地校正工艺条件的偏差，因此可以稳定地提供恒定品质的产品。一种基板处理方法，用于处理具有金属和绝缘材料的基板，所述基板以其金属的暴露表面作为基准面的方式选择性地或优先地改变的金属的膜厚度包括测量处理期间和/或紧随其后的金属的膜厚度和/或膜性质的变化，以及基于该测量结果的监测处理和调整处理条件。

5. 发明授权

US07344986B2 Plating solution, semiconductor device and method for manufacturing the same 有权
标题翻译：电镀液，半导体装置及其制造方法
公开(公告)号：US07344986B2
公开(公告)日：2008-03-18
申请号：US10482104
申请日：2002-11-06
申请人： Hiroaki Inoue , Xinming Wang , Moriji Matsumoto , Makoto Kanayama
发明人： Hiroaki Inoue , Xinming Wang , Moriji Matsumoto , Makoto Kanayama
IPC分类号： H01L21/4763
CPC分类号： H01L21/76849 , C23C18/48 , C25D3/58 , H01L21/288 , H01L21/2885 , H01L21/7684 , H01L23/53238 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a plating solution useful for forming embedded interconnects by embedding a conductive material in fine recesses for interconnects provided in the surface of a substrate, such as a semiconductor substrate, or for forming a protective layer for protecting the surface of embedded interconnects, a semiconductor device manufactured by using the plating solution and a method for manufacturing the semiconductor device. The plating solution contains copper ions, metal ions of a metal, and the metal is capable of forming with copper a copper alloy in which the metal does not form a solid solution with copper, a complexing agent, and a reducing agent free from alkali metal.
摘要翻译：本发明涉及一种用于通过将导电材料嵌入到设置在诸如半导体衬底的衬底的表面中的互连的精细凹槽中的用于形成嵌入式互连的电镀液，或用于形成用于保护嵌入式互连的表面的保护层，使用电镀液制造的半导体装置及其制造方法。电镀溶液含有铜离子，金属的金属离子，金属能够与铜形成铜合金，其中金属不与铜形成固溶体，络合剂和不含碱金属的还原剂。

6. 发明授权

US07279408B2 Semiconductor device, method for manufacturing the same, and plating solution 有权
标题翻译：半导体装置及其制造方法以及电镀液
公开(公告)号：US07279408B2
公开(公告)日：2007-10-09
申请号：US11254790
申请日：2005-10-21
申请人： Hiroaki Inoue , Norio Kimura , Xinming Wang , Moriji Matsumoto , Makoto Kanayama
发明人： Hiroaki Inoue , Norio Kimura , Xinming Wang , Moriji Matsumoto , Makoto Kanayama
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C18/1608 , C23C18/1632 , C23C18/1653 , C23C18/32 , C23C18/48 , C23C18/50 , H01L21/288 , H01L21/2885 , H01L21/3212 , H01L21/7684 , H01L21/76849 , H01L21/76864 , H01L21/76874 , H01L21/76877 , H01L21/76883 , H01L23/53238 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a semiconductor device and a method for manufacturing the same. The semiconductor device has an embedded interconnect structure in which an electric conductor, such as copper or silver, is embedded in fine recesses formed in a surface of a semiconductor substrate, and also has a protective film formed on surfaces of exposed interconnects that define the interconnect structure, to protect the interconnects. The protective film has a flattened surface.
摘要翻译：半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。半导体器件具有嵌入式互连结构，其中诸如铜或银的电导体嵌入形成在半导体衬底的表面中的细小凹槽中，并且还具有形成在暴露的互连件的表面上的保护膜，所述互连限定了互连结构，保护互连。保护膜具有平坦的表面。

7. 发明授权

US07172979B2 Substrate processing apparatus and method 有权
标题翻译：基板加工装置及方法
公开(公告)号：US07172979B2
公开(公告)日：2007-02-06
申请号：US10481424
申请日：2002-12-26
申请人： Akihisa Hongo , Xinming Wang
发明人： Akihisa Hongo , Xinming Wang
IPC分类号： H01L21/469 , B08B3/00 , B05C11/00
CPC分类号： H01L21/76843 , B08B3/02 , B08B2203/0288 , H01L21/288 , H01L21/67051 , H01L21/6708 , H01L21/76849 , H01L21/76873
摘要： A substrate processing apparatus has a substrate holder for detachably holding a substrate so that a surface, to be processed, of the substrate faces downward, and a sealing ring for sealing a peripheral portion of the surface, to be processed, of the substrate held by the substrate holder. The substrate processing apparatus also has a plurality of ejection nozzles disposed below the substrate holder for ejecting a treatment solution toward the surface, to be processed, of the substrate held by the substrate holder, and a mechanism for rotating and vertically moving the substrate holder and the ejection nozzles relative to each other.
摘要翻译：基板处理装置具有：基板保持件，用于可拆卸地保持基板，使得待处理的基板的表面朝下;密封环，用于密封待加工的表面的周边部分基板支架。基板处理装置还具有多个喷射喷嘴，其设置在基板保持器的下方，用于向被基板保持器保持的基板的待处理表面喷射处理溶液，以及用于使基板保持器旋转和垂直移动的机构，喷嘴相对于彼此。

8. 发明授权

US07141274B2 Substrate processing apparatus and method 失效
标题翻译：基板加工装置及方法
公开(公告)号：US07141274B2
公开(公告)日：2006-11-28
申请号：US10482117
申请日：2002-11-06
申请人： Xinming Wang , Kenichi Abe , Koji Mishima
发明人： Xinming Wang , Kenichi Abe , Koji Mishima
IPC分类号： B05D1/18
CPC分类号： H01L21/76843 , C23C18/1628 , H01L21/288 , H01L21/76849 , H01L21/76864 , H01L21/76874
摘要： A substrate processing apparatus and method which employs the so-called batch processing method of processing a plurality of substrates simultaneously, thereby increasing the throughput, and which can carry out processing, such as electroless plating, stably and securely with a relatively simple apparatus. The substrate processing apparatus includes: a processing bath (14) for holding a processing liquid (12); and a substrate holder (16) which is vertically movable relative to the processing bath (14) and which includes a plurality of substrate holding portions (40) for holding a plurality of substrates (W) in parallel. Each substrate holding portion (40) has a substrate stage (48) and a substrate presser (54), which can move close to or away from each other and can grip therebetween a peripheral portion of a substrate to thereby hold the substrate with its back surface sealed, and has a heating medium flow passage (62) for passing a heating medium therethrough so as to regulate the temperature of the substrate holding portion (40).
摘要翻译：采用所谓的批处理方法同时处理多个基板的基板处理装置和方法，从而提高生产量，并且可以用相对简单的装置稳定可靠地进行化学镀等处理。基板处理装置包括：用于保持处理液体的处理槽（14）; 以及相对于处理槽（14）可垂直移动并且包括用于平行地保持多个基板（W）的多个基板保持部（40）的基板保持件（16）。每个基板保持部分（40）具有基板台（48）和基板压紧件（54），它们能够彼此接近或远离地移动，并且能够夹持在基板的周边部分之间，从而将基板保持在其背面表面密封，并且具有用于使加热介质通过其中的加热介质流动通道（62），以调节基板保持部分（40）的温度。

9. 发明申请

US20050009213A1 Substrate processing method and apparatus 有权
标题翻译：基板加工方法及装置
公开(公告)号：US20050009213A1
公开(公告)日：2005-01-13
申请号：US10874245
申请日：2004-06-24
申请人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Akira Fukunaga
发明人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Akira Fukunaga
IPC分类号： G01B21/08 , C23C18/16 , C23C18/31 , C23F1/08 , H01L21/288 , H01L21/3205 , H01L21/66 , H01L21/768 , H01L21/00
CPC分类号： H01L21/76849 , C23C18/1608 , C23C18/1675 , C23C18/1692 , C23C18/1879 , H01L21/288 , H01L21/76864 , H01L21/76874 , H01L22/12 , H01L22/20 , H01L2223/54466
摘要： There is provided a substrate processing method and apparatus which can measure and monitor the thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in the process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate with a metal and an insulating material exposed on its surface in such a manner that the film thickness of the metal portion with the exposed surface of the metal as a reference plane is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal portion during and/or immediately after processing, and monitoring the processing and adjusting the processing conditions based on the results of measurement.
摘要翻译：提供了可以根据需要测量和监测在基板上形成的膜的厚度和/或性能的基板处理方法和装置，并且可以快速校正工艺条件的偏差，因此可以稳定地提供恒定的产品质量。一种基板处理方法，用于以金属的暴露表面作为基准面的金属部分的膜厚选择性地或优先地改变的方式处理具有金属和绝缘材料的基板，该金属和绝缘材料暴露在其表面上，包括测量在处理期间和/或紧随其后的金属部分的膜厚度和/或膜特性的变化，并且基于测量结果监视处理和调整处理条件。

10. 发明申请

US20110129329A1 WIND TURBINE INSTALLATION VESSEL AND A GRAVITY CENTER ADJUSTMENT DEVICE THEREOF 审中-公开
标题翻译：风力涡轮机安装船和重力中心调整装置
公开(公告)号：US20110129329A1
公开(公告)日：2011-06-02
申请号：US12754502
申请日：2010-04-05
申请人： Jialiang Wu , Xinming Wang , Yanlin Li , Junlei Bai
发明人： Jialiang Wu , Xinming Wang , Yanlin Li , Junlei Bai
IPC分类号： F03D11/00
CPC分类号： B63B39/02 , B63B25/28 , F03D13/10 , F03D13/25 , F05B2240/932 , Y02E10/727
摘要： The present invention discloses a gravity center adjustment device (2) for a wind turbine installation vessel. The gravity center adjustment device (2) is movably mounted to an outside of a vessel body (4) of the wind turbine installation vessel, so that the gravity center adjustment device (2) can selectively move in a plane substantially parallel with the vessel body (4). Since the gravity center adjustment device (2) according to the invention is movably installed to the vessel body and can move in a plane substantially parallel with the vessel body (4) so as to adjust the horizontal position of the gravity center of the installation vessel, its ability of adjusting the gravity center of the wind turbine installation vessel can be improved and the stability of the wind turbine installation vessel can be improved. Therefore, the operation efficiency can be improved and the cost of constructing a wind power plant on the offshore can be reduced. The present invention also discloses a wind turbine installation vessel including the gravity center adjustment devices (2) described above.
摘要翻译：本发明公开了一种用于风力涡轮机安装容器的重心调节装置（2）。重力调节装置（2）可移动地安装在风力涡轮机安装容器的容器主体（4）的外部，使得重心调节装置（2）可以选择性地在与容器主体平行的平面中移动（4）。由于根据本发明的重心调节装置（2）可移动地安装到容器主体上并且可以在与容器主体（4）基本平行的平面中移动，以便调节安装容器的重心的水平位置可以提高其调整风力涡轮机安装容器的重心的能力，并且可以提高风力涡轮机安装容器的稳定性。因此，可以提高运行效率，降低在海上建设风力发电厂的成本。本发明还公开了一种包括上述重心调节装置（2）的风力涡轮机安装容器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式