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1. 发明申请

US20130115774A1 METHOD FOR CHEMICAL PLANARIZATION AND CHEMICAL PLANARIZATION APPARATUS 有权
标题翻译：化学平面化学和化学平面化装置的方法
公开(公告)号：US20130115774A1
公开(公告)日：2013-05-09
申请号：US13422969
申请日：2012-03-16
申请人： Masako Kodera , Yukiteru Matsui
发明人： Masako Kodera , Yukiteru Matsui
IPC分类号： H01L21/3105 , C23F1/08 , H01L21/306
CPC分类号： H01L21/67086 , H01L21/31055 , H01L21/67011
摘要： According to one embodiment, a method for chemical planarization includes: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved therein at a saturated concentration; and decreasing height of irregularity of a silicon dioxide film. In the decreasing, dissolution rate of convex portions is made larger than dissolution rate of concave portion of the irregularity while changing equilibrium state of the treatment liquid at areas being in contact with the convex portions of the irregularity, in a state in which the silicon dioxide film having the irregularity is brought into contact with the treatment liquid.
摘要翻译：根据一个实施方案，化学平面化方法包括：以饱和浓度制备含有溶解有二氧化硅的氢硅氟酸水溶液的处理液; 并降低二氧化硅膜的不规则高度。在使二氧化硅的状态下，使凹凸部的溶解率降低，使得在不规则的凸部接触的区域改变处理液的平衡状态，使凸部的溶解率大于凹凸部的凹部的溶解率使具有不规则性的膜与处理液接触。

2. 发明授权

US07727891B2 Method of manufacturing a semiconductor device using a wet process 有权
标题翻译：使用湿法制造半导体器件的方法
公开(公告)号：US07727891B2
公开(公告)日：2010-06-01
申请号：US11074774
申请日：2005-03-09
申请人： Yoshitaka Matsui , Masako Kodera
发明人： Yoshitaka Matsui , Masako Kodera
IPC分类号： H01L21/461
CPC分类号： H01L21/02071 , H01L21/31116 , H01L21/3212 , H01L21/76814 , H01L21/76838 , H01L21/7684 , H01L21/76883
摘要： A method of manufacturing a semiconductor device, including the following processes of forming a structure in which a barrier metal containing at least of Ti and Ta and a copper wiring are exposed on its surface, or a structure in which at least one substance selected from the group consisting of Ti, W, and Cu and Al are exposed on its surface, above a semiconductor substrate, and supplying a hydrogen-dissolved solution dissolving hydrogen gas to the surface of the structure.
摘要翻译：一种制造半导体器件的方法，包括以下工序：形成其中至少含有Ti和Ta和铜布线的阻挡金属在其表面上露出的结构，或者其中至少一种选自由Ti，W和Cu和Al组成的组在其表面上暴露于半导体衬底上方，并将溶解有氢的氢溶解溶液供给到结构的表面。

3. 发明申请

US20070254558A1 Polishing Apparatus and Polishing Method 审中-公开
标题翻译：抛光装置和抛光方法
公开(公告)号：US20070254558A1
公开(公告)日：2007-11-01
申请号：US11661141
申请日：2005-08-26
申请人： Masako Kodera , Yoshihiro Mochizuki , Akira Fukuda , Akira Kodera , Hirokuni Hiyama , Manabu Tsujimura , Kazuto Hirokawa , Akira Fukunaga
发明人： Masako Kodera , Yoshihiro Mochizuki , Akira Fukuda , Akira Kodera , Hirokuni Hiyama , Manabu Tsujimura , Kazuto Hirokawa , Akira Fukunaga
IPC分类号： B24B37/04 , H01L21/00
CPC分类号： H01L21/6708 , B24B37/005 , B24B37/042 , B24B37/046 , B24B49/006 , B24B57/02
摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).
摘要翻译：抛光装置（30）具有抛光面（32），用于保持晶片（W）的顶环（36），使抛光面（32）和晶片（W）相对于运动的电机（46,56）相对于以及垂直移动机构（54），其在压制压力下将晶片（W）压靠在抛光表面（32）上。抛光装置（30）还具有控制器（44），用于在抛光速率与按压压力与相对速度的乘积不成比例的非普雷斯顿范围内调节抛光状态。抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液体，并且在晶片表面（W）内均匀的研磨速率。

4. 发明申请

US20070173056A1 Semiconductor device fabrication method and polishing apparatus 审中-公开
标题翻译：半导体器件制造方法和抛光装置
公开(公告)号：US20070173056A1
公开(公告)日：2007-07-26
申请号：US11652505
申请日：2007-01-12
申请人： Masako Kodera
发明人： Masako Kodera
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , C25F3/02 , H01L21/3212 , H01L21/32125 , H01L21/7684
摘要： A method for fabricating a semiconductor device includes forming a barrier metal film on a substrate with an opening defined therein, forming a copper-containing film on said barrier metal film after having formed said barrier metal film on a surface of said substrate and an inner wall of said opening, and polishing said copper-containing film and said barrier metal film while applying a voltage to said substrate in a state that said copper-containing film and said barrier metal film are exposed.
摘要翻译：一种制造半导体器件的方法包括：在其上限定有开口的基板上形成阻挡金属膜，在所述基板的表面上形成所述阻挡金属膜之后，在所述阻挡金属膜上形成含铜膜，并且在所述含铜膜和所述阻挡金属膜露出的状态下对所述基板施加电压，并且对所述含铜膜和所述阻挡金属膜进行抛光。

5. 发明授权

US06410439B1 Semiconductor polishing apparatus and method for chemical/mechanical polishing of films 失效
标题翻译：半导体抛光装置及薄膜化学/机械抛光方法
公开(公告)号：US06410439B1
公开(公告)日：2002-06-25
申请号：US09527528
申请日：2000-03-16
申请人： Masako Kodera , Takashi Yoda , Motosuke Miyoshi
发明人： Masako Kodera , Takashi Yoda , Motosuke Miyoshi
IPC分类号： H01L21302
CPC分类号： B24B37/013 , H01L21/30625 , H01L21/31053
摘要： In the CMP of films of semiconductor devices, pulsed measuring radiation is directed onto a surface to be polished of a rotating wafer. At this point, the pulse repetition rate of the pulsed measuring radiation is determined so that the pulse measuring radiation is directed only onto a specified portion of the surface of each semiconductor device. Thereby, reflection data can be obtained only from the specified portion of a film to be polished, allowing accurate measurements of the thickness of the specified portion of the film in the middle of polishing.
摘要翻译：在半导体器件的CMP的CMP中，脉冲测量辐射被引导到旋转晶片抛光的表面上。此时，脉冲测量辐射的脉冲重复率被确定为使得脉冲测量辐射仅指向每个半导体器件的表面的指定部分。由此，只能从要被研磨的膜的指定部分获得反射数据，从而可以精确地测量抛光中间的膜的指定部分的厚度。

6. 发明授权

US06224464B1 Polishing method and polisher used in the method 失效
标题翻译：该方法中使用的抛光方法和抛光机
公开(公告)号：US06224464B1
公开(公告)日：2001-05-01
申请号：US08763342
申请日：1996-12-11
申请人： Haruki Nojo , Rempei Nakata , Masako Kodera , Nobuo Hayasaka
发明人： Haruki Nojo , Rempei Nakata , Masako Kodera , Nobuo Hayasaka
IPC分类号： B24B100
CPC分类号： C09G1/02 , H01L21/31053
摘要： According to the present invention, there is provided a polishing method having the steps of forming a film to be polished, having a depressed portion and a protruding portion on a surface of a substrate, and polishing the film to be polished by relatively moving the substrate and a polishing table, while pressing the substrate having the film to be polished, onto a polishing cloth of the polishing table and supplying a polishing solution containing polishing grains, between the film to be polished and the polishing cloth, wherein an organic compound having a molecular weight of 100 or more, and containing at least one hydrophilic group selected from the group consisting of COOM1 (M represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group), SO3H (sulfo group) and SO3M2 (M2 represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group) is added to the polishing solution. Further, there are provided a polishing solution in which polishing grains are dispersed into a dispersion medium, and a polishing agent containing an organic compound having a molecular weight of 100 or more and containing at least one hydrophilic group selected from the group consisting of COOM1 (M represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group), SO3H (sulfo group) and SO3M2 (M2 represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group) added to the polishing solution.
摘要翻译：根据本发明，提供了一种抛光方法，其具有以下步骤：在基板的表面上形成具有凹陷部分和突出部分的待抛光膜，并且通过相对移动基板来抛光待抛光的膜以及研磨台，在将要研磨的膜的基板按压到研磨台的抛光布上，并在待抛光的薄膜和抛光布之间提供含有抛光颗粒的抛光液，其中具有分子量为100以上，并且含有至少一个选自COOM1的亲水基团（M表示当被羧基的氢原子取代时可以形成盐的原子或官能团），SO 3 H（磺基基团）和SO 3 M 2（M2表示当被羧基的氢原子取代时可以形成盐的原子或官能团）加入到抛光溶胶。此外，提供了将研磨粒分散在分散介质中的研磨液，以及含有分子量为100以上且含有至少一个亲水性基团的研磨剂，所述亲水性基团选自COOM1（ M表示当被羧基的氢原子取代时可以形成盐的原子或官能团），SO 3 H（磺基）和SO 3 M 2（M 2表示当被取代时可以形成盐的原子或官能团加入到抛光溶液中的羧基的氢原子）。

7. 发明授权

US5860847A Polishing apparatus 失效
标题翻译：抛光设备
公开(公告)号：US5860847A
公开(公告)日：1999-01-19
申请号：US708948
申请日：1996-09-06
申请人： Kunihiko Sakurai , Tetsuji Togawa , Toyomi Nishi , Seiji Katsuoka , Hiromi Yajima , Masako Kodera
发明人： Kunihiko Sakurai , Tetsuji Togawa , Toyomi Nishi , Seiji Katsuoka , Hiromi Yajima , Masako Kodera
IPC分类号： B24B37/013 , B24B37/04 , B24B49/04 , B24B49/16 , H01L21/66 , B24B49/00
CPC分类号： B24B37/013 , B24B37/04 , B24B49/04 , B24B49/16 , H01L22/26
摘要： A polishing apparatus has a turntable with an abrasive cloth mounted on an upper surface thereof and a top ring disposed above the turntable for supporting a workpiece to be polished against the abrasive cloth under predetermined pressure. The turntable is rotatable by a first motor through a timing pulley connected to the first motor, and the top ring is rotatable by a second motor through a timing pulley connected to the second motor. A torque detector incorporated in the timing pulley connected to at least one of the first motor and the second motor detects an output torque produced by the at least one of the first motor and the second motor.
摘要翻译：抛光装置具有安装在其上表面上的研磨布的转台和设置在转盘上方的顶环，用于在预定压力下将待抛光的工件支撑在磨料上。转盘可以通过连接到第一马达的定时皮带由第一马达旋转，并且顶环可以通过连接到第二马达的定时皮带的第二马达转动。并入到与第一电动机和第二电动机中的至少一个连接的正时轮中的转矩检测器检测由第一电动机和第二电动机中的至少一个产生的输出转矩。

8. 发明授权

US5616063A Polishing apparatus 失效
标题翻译：抛光设备
公开(公告)号：US5616063A
公开(公告)日：1997-04-01
申请号：US309193
申请日：1994-09-20
申请人： Katsuya Okumura , Riichirou Aoki , Hiromi Yajima , Masako Kodera , Shirou Mishima , Atsushi Shigeta , Masayoshi Hirose , Norio Kimura , Seiji Ishikawa
发明人： Katsuya Okumura , Riichirou Aoki , Hiromi Yajima , Masako Kodera , Shirou Mishima , Atsushi Shigeta , Masayoshi Hirose , Norio Kimura , Seiji Ishikawa
IPC分类号： H01L21/302 , B08B1/04 , B24B27/00 , B24B37/04 , B24B37/34 , B24B51/00 , B24B55/12 , H01L21/00 , H01L21/677 , B24B49/00
CPC分类号： H01L21/67167 , B08B1/04 , B08B13/00 , B24B27/0023 , B24B37/04 , B24B37/345 , B24B51/00 , B24B55/12 , H01L21/67028 , H01L21/67046 , H01L21/67057 , H01L21/67161 , H01L21/67219 , H01L21/67745
摘要： A polishing apparatus is a cluster type of apparatus having a plurality of units which perform various operations. The polishing apparatus includes a universal transfer robot having at least one arm for transferring a workpiece, a plurality of units disposed around the universal transfer robot and including a loading unit for receiving the workpiece to be polished, at least one polishing unit for polishing the workpiece, at least one washing unit for washing the workpiece which has been polished and an unloading unit for receiving the cleaned workpiece. Discrete mechanisms respectively transfer a clean workpiece and a dirty workpiece amongst the units.
摘要翻译：抛光装置是具有执行各种操作的多个单元的集群类型的装置。抛光装置包括具有用于传送工件的至少一个臂的通用传送机器人，设置在通用传送机器人周围的多个单元，并且包括用于接收被抛光工件的装载单元，用于抛光工件的至少一个抛光单元至少一个用于清洗已经被抛光的工件的洗涤单元和用于接收清洁的工件的卸载单元。离散机构分别在单元之间传送清洁的工件和脏工件。

9. 发明授权

US08614510B2 Semiconductor device including a metal wiring with a metal cap 失效
标题翻译：包括具有金属盖的金属布线的半导体装置
公开(公告)号：US08614510B2
公开(公告)日：2013-12-24
申请号：US12726604
申请日：2010-03-18
申请人： Hideyuki Tomizawa , Noriaki Matsunaga , Tadayoshi Watanabe , Shiro Mishima , Masako Kodera
发明人： Hideyuki Tomizawa , Noriaki Matsunaga , Tadayoshi Watanabe , Shiro Mishima , Masako Kodera
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L21/76826 , H01L21/3105 , H01L21/76832 , H01L21/76849 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes forming an insulating film including silicon, oxygen, carbon and hydrogen above a semiconductor substrate, forming a wiring trench in the insulating film, forming a metal film to be a metal wiring on the insulating film such that the metal film is provided in the wiring trench, forming the metal wiring by removing the metal film outside the wiring trench, performing a hydrophobic treatment to the surface of the insulating film after the forming the metal wiring, and forming a metal cap selectively on an upper surface of the metal wiring by plating after the performing the hydrophobic treatment.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底上形成包括硅，氧，碳和氢的绝缘膜，在绝缘膜中形成布线沟槽，在绝缘膜上形成金属膜作为金属布线，使得金属膜设置在布线沟槽中，通过去除布线沟槽外的金属膜形成金属布线，在形成金属布线之后对绝缘膜的表面进行疏水处理，并在上部选择性地形成金属帽在执行疏水处理之后通过电镀的金属布线的表面。

10. 发明授权

US5948205A Polishing apparatus and method for planarizing layer on a semiconductor wafer 失效
标题翻译：用于在半导体晶片上平坦化层的抛光装置和方法
公开(公告)号：US5948205A
公开(公告)日：1999-09-07
申请号：US897570
申请日：1997-07-21
申请人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
发明人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
IPC分类号： B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/14 , H01L21/3105 , H01L21/66 , H01L21/768
CPC分类号： B24B37/013 , B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/1463 , H01L21/31051 , H01L21/31053 , H01L21/76819 , H01L22/26 , H01L2924/0002
摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.
摘要翻译：为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。此外，以增强的抛光速率对绝缘膜进行抛光。

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