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1. 发明授权

US5914068A Bi-layer oxide ferroelectrics 失效
标题翻译：双层氧化物铁电体
公开(公告)号：US5914068A
公开(公告)日：1999-06-22
申请号：US765575
申请日：1996-12-30
申请人： Masahiko Hiratani , Keiko Kushida , Kazushige Imagawa , Kazumasa Takagi
发明人： Masahiko Hiratani , Keiko Kushida , Kazushige Imagawa , Kazumasa Takagi
IPC分类号： C04B35/453 , C30B29/22
CPC分类号： C04B35/453
摘要： Novel Bi-layer Perovskite ferroelectrics constituted of BiO intermediate layers (17) and pseudo-Perovskite layers (18) stacked alternately are disclosed. The Bi-layer Perovskite ferroelectrics have such a crystal structure which has a fundamental skeleton composed of each intermediate layer (17) consisting of one BiO plane and each pseudo-Perovskite structure (18) consisting of Pb(Zr, Ti)O.sub.3. Since the intermediate layer (17) is constituted of the BiO layer, the ferroelectrics are more excellent in ferroelectric characteristics and thermodynamic stability than known Perovskite ferroelectrics comprising a Bi.sub.2 O.sub.2 layer.
摘要翻译： PCT No.PCT / JP95 / 01205 Sec。 371日期1996年12月30日第 102（e）日期1996年12月30日PCT归档1995年6月16日PCT公布。出版物WO96 / 00704 日期1996年1月11日公开了由交替堆叠的BiO中间层（17）和伪钙钛矿层（18）构成的新型双层钙钛矿型铁电体。双层钙钛矿铁电体具有这样的晶体结构，其具有由由一个BiO平面构成的每个中间层（17）和由Pb（Zr，Ti）O 3组成的每个假钙钛矿结构（18）组成的基本骨架。由于中间层（17）由BiO层构成，所以铁电体的铁电特性和热力学稳定性优于包括Bi 2 O 2层的已知钙钛矿型铁电体。

2. 发明授权

US5250506A Superconductive switching element with semiconductor channel 失效
标题翻译：具有半导体通道的超导开关元件
公开(公告)号：US5250506A
公开(公告)日：1993-10-05
申请号：US647234
申请日：1991-01-29
申请人： Shinichiroh Saitoh , Yoshinobu Tarutani , Tokuumi Fukazawa , Masahiko Hiratani , Toshikazu Nishino , Haruhiro Hasegawa , Ushio Kawabe , Kazumasa Takagi , Mitsuo Suga
发明人： Shinichiroh Saitoh , Yoshinobu Tarutani , Tokuumi Fukazawa , Masahiko Hiratani , Toshikazu Nishino , Haruhiro Hasegawa , Ushio Kawabe , Kazumasa Takagi , Mitsuo Suga
IPC分类号： H01L39/14 , H01L39/22 , B05D5/12 , H01B12/00
CPC分类号： H01L39/225 , H01L39/146
摘要： A superconductive element at least comprising first and second superconductive electrodes composed of an oxide superconductor material and a semiconductor film composed of an oxide semiconductor material put between the first and second superconductive electrodes and disposed in adjacent with the first and the second superconductive electrodes, in which the semiconductor film is formed with an oxide comprising rare earth elements other than Pr, Ba and Cu as the main ingredient element or an oxide comprising predetermined amount of rare earth elements other than Pr, predetermined amount of Pr, Ba and Cu as the main ingredient element. Extremely fine size is no more necessary to enable fabrication with the existent fine fabrication technic.
摘要翻译：一种超导元件，至少包括由氧化物超导体材料构成的第一和第二超导电极以及由位于第一和第二超导电极之间并与第一和第二超导电极相邻设置的氧化物半导体材料构成的半导体膜，其中半导体膜由包含除Pr，Ba和Cu之外的稀土元素作为主要成分的氧化物或包含预定量的Pr以外的稀土元素的氧化物形成，预定量的Pr，Ba和Cu作为主要成分元件。非常精细的尺寸不再需要使用现有的精细制造技术进行制造。

3. 发明授权

US4803392A Piezoelectric transducer 失效
标题翻译：压电式换能器
公开(公告)号：US4803392A
公开(公告)日：1989-02-07
申请号：US86488
申请日：1987-08-18
申请人： Keiko Kushida , Hiroshi Takeuchi , Toshio Kobayashi , Kazumasa Takagi , Kenzo Susa
发明人： Keiko Kushida , Hiroshi Takeuchi , Toshio Kobayashi , Kazumasa Takagi , Kenzo Susa
IPC分类号： H01L41/08 , H01L41/113 , H04R17/00 , H04R31/00
CPC分类号： H01L41/081 , H01L41/1132 , H01L41/316
摘要： There is provided a piezoelectric transducer comprising a substrate having a single crystal plate comprising strontium titanate or magnesium oxide, a first electrode comprising metal films so formed on the substrate as to leave openings exposing the surface of the substrate, a piezoelectric thin film comprising lead titanate as the main component formed so as to cover the openings and the first electrode, and a second electrode formed on the piezoelectric thin film.
摘要翻译：提供了一种压电换能器，其包括具有包括钛酸锶或氧化镁的单晶板的基板，第一电极包括在基板上形成的金属膜，以留下露出基板表面的开口，包含钛酸铅的压电薄膜作为形成为覆盖开口和第一电极的主要部件和形成在压电薄膜上的第二电极。

4. 发明授权

US5077266A Method of forming weak-link Josephson junction, and superconducting device employing the junction 失效
标题翻译：形成弱连接JOSEPHSON JUNCTION的方法和使用连接的超级设备
公开(公告)号：US5077266A
公开(公告)日：1991-12-31
申请号：US405737
申请日：1989-09-11
申请人： Kazumasa Takagi , Tokuumi Fukazawa , Yoshimi Kawanami , Yuuichi Madokoro , Katsuki Miyauchi , Toshiyuki Aida , Yukio Honda , Masaaki Futamoto , Masahiko Hiratani
发明人： Kazumasa Takagi , Tokuumi Fukazawa , Yoshimi Kawanami , Yuuichi Madokoro , Katsuki Miyauchi , Toshiyuki Aida , Yukio Honda , Masaaki Futamoto , Masahiko Hiratani
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/2496 , Y10S505/701 , Y10S505/702 , Y10S505/729 , Y10T29/41
摘要： A weak-link Josephson junction is of the type employing a thin film of an oxide superconductor, in which a crystal grain boundary produced reflecting an artificial crystal defect is utilized as the weak-link junction. The crystal grain boundary is formed concretely by a method in which atoms of different species are deposited on the predetermined part of the surface of a substrate, the predetermined part of the surface of a substrate is disturbed, or parts of different crystal face orientations are formed at the surface of a substrate, whereupon the superconducting thin film is epitaxially grown on the substrate, or by a method in which the predetermined part of the superconducting thin film, epitaxially grown on a substrate, is diffused with atoms of different species hampering a superconductivity, or the predetermined part of the superconducting thin film is disturbed, whereupon the superconducting thin film is annealed.

5. 发明授权

US5380704A Superconducting field effect transistor with increased channel length 失效
标题翻译：超导场效应晶体管具有增加的沟道长度
公开(公告)号：US5380704A
公开(公告)日：1995-01-10
申请号：US113006
申请日：1993-08-30
申请人： Yoshinobu Tarutani , Tokuumi Fukazawa , Uki Kabasawa , Kazumasa Takagi , Akira Tsukamoto , Masahiko Hiratani , Toshikazu Nishino
发明人： Yoshinobu Tarutani , Tokuumi Fukazawa , Uki Kabasawa , Kazumasa Takagi , Akira Tsukamoto , Masahiko Hiratani , Toshikazu Nishino
IPC分类号： H01L29/43 , H01L29/49 , H01L29/786 , H01L39/22 , B05D5/12 , H01B12/00
CPC分类号： H01L29/78696 , H01L29/437 , H01L29/4908 , H01L29/78645 , H01L29/7869 , H01L39/146
摘要： Disclosed herein is a superconducting field effect transistor (FET) which has at least an active region formed from a film of oxide normal conductor, a plurality of electrodes formed from a film of oxide superconductor, and a means to control the current which flows between the electrodes through the active region. Having a much greater electrode distance than the conventional superconducting device, it can be produced easily by lithography without resorting to special techniques.
摘要翻译：本发明公开了一种超导场效应晶体管（FET），其至少具有由氧化物正导体膜形成的有源区，由氧化物超导体的膜形成的多个电极，以及控制在氧化物超导体之间流动的电流的装置电极通过有源区。具有比常规超导装置更大的电极距离，其可以通过光刻而容易地制造，而不需要采用特殊技术。

6. 发明申请

US20140311068A1 MOUNTING BASE 有权
标题翻译：安装基座
公开(公告)号：US20140311068A1
公开(公告)日：2014-10-23
申请号：US13993818
申请日：2011-12-15
申请人： Kazumasa Takagi , Eizou Takagi
发明人： Kazumasa Takagi , Eizou Takagi
IPC分类号： E02D27/32 , E02D27/01 , E02D27/50
CPC分类号： E02D27/32 , E02D27/01 , E02D27/50 , E04D13/1407 , F16M9/00 , F24F13/32 , F24S25/61 , F24S25/617 , Y02E10/47
摘要： A mounting base (10A) that shortens construction time and reduces cost is formed from a metal foundation (16), a metal cover (17), height-adjusting bolts (18), support bolts (19), and mortar (20). In the base (10A), the first fixed ends (47) of the bolts (19) are inserted into support bolt insertion holes (39) formed in a metal plate (24) and are fixed to the metal plate (24) with nuts (50), and the second fixed ends (48) of the bolts (19) are fixed to a concrete slab (12) with nuts (51). The portion of the first fixed ends (47) of the bolts (19) which extends between the metal plate (24) and the top surface of the concrete slab (12) is integrated with the mortar (29) filled into the space (46), and the metal cover (17) covers the opening (27) at the top of a metal tube (23).
摘要翻译：金属基座（16），金属盖（17），高度调节螺栓（18），支撑螺栓（19）和砂浆（20）形成了缩短施工时间并降低成本的安装基座（10A）。在基座（10A）中，螺栓（19）的第一固定端（47）插入形成在金属板（24）中的支撑螺栓插入孔（39）中，并用螺母固定到金属板（24）（50），螺栓（19）的第二固定端（48）用螺母（51）固定在混凝土板（12）上。在金属板（24）和混凝土板（12）的上表面之间延伸的螺栓（19）的第一固定端部（47）的一部分与填充到空间（46）中的砂浆），并且金属盖（17）覆盖在金属管（23）的顶部的开口（27）。

7. 发明授权

US4842917A Magnetic recording medium and process for producing the same 失效
标题翻译：磁记录介质及其制造方法
公开(公告)号：US4842917A
公开(公告)日：1989-06-27
申请号：US88380
申请日：1987-08-24
申请人： Tomoyuki Ohno , Yoshihiro Shiroishi , Sadao Hishiyama , Hiroyuki Suzuki , Takaaki Shirakura , Shinya Matsuoka , Makoto Sano , Takao Nakamura , Kazumasa Takagi , Tokuumi Fukazawa , Kenzo Susa
发明人： Tomoyuki Ohno , Yoshihiro Shiroishi , Sadao Hishiyama , Hiroyuki Suzuki , Takaaki Shirakura , Shinya Matsuoka , Makoto Sano , Takao Nakamura , Kazumasa Takagi , Tokuumi Fukazawa , Kenzo Susa
IPC分类号： G11B5/73
CPC分类号： G11B5/7325 , Y10S428/90 , Y10T428/24355
摘要： A magnetic recording medium having a magnetic film formed on a substrate directly or through an underlayer from an alloy containing Co as a principal component. The central line average surface roughness Ra and maximum surface roughness Rmax of the magnetic film in a direction perpendicular to the direction of magnetic recording are selected so as to fall within the ranges of 1 nm.ltoreq.Ra.ltoreq.20 nm and Rmax.ltoreq.25 Ra, respectively, and the in-plane magnetic anisotropy energy Ku of the magnetic film is selected to fall within the range of 0.ltoreq.Ku.ltoreq.8.times.10.sup.5 erg/cm.sup.3. Thus, it is possible to minimize the value of modulation which represents the degree of variation of read output on the same circumference of a magnetic disk. It is also possible to reduce the noise generated in read and write operations by forming the magnetic film so as have no crystallographic orientation.
摘要翻译：一种磁记录介质，其具有直接或通过底层从基板上形成的含有Co作为主要成分的合金的磁性膜。选择磁性膜在垂直于磁记录方向的方向上的中心线平均表面粗糙度Ra和最大表面粗糙度Rmax，使其落入1nm≤Ra<20nm的范围内，并且Rmax < / = 25Ra，磁性膜的面内磁各向异性能Ku被选择在0≤K≤5×10 5Ω/ cm 3的范围内。因此，可以将表示在磁盘的同一圆周上的读取输出的变化程度的调制值最小化。也可以通过形成磁性膜来减少读取和写入操作中产生的噪声，从而没有结晶取向。

8. 发明授权

US3951729A Method for producing single crystals 失效
标题翻译：单晶生产方法
公开(公告)号：US3951729A
公开(公告)日：1976-04-20
申请号：US432516
申请日：1974-01-11
申请人： Kazumasa Takagi , Tokuumi Fukazawa , Mitsuru Ishii , Seigo Kishino
发明人： Kazumasa Takagi , Tokuumi Fukazawa , Mitsuru Ishii , Seigo Kishino
IPC分类号： C01G15/00 , C30B15/00 , C30B15/20 , H01L21/208 , B01J17/18
CPC分类号： C30B15/00 , C30B29/28 , Y10S117/902
摘要： In growing single crystals of gadolinium gallium garnet, dysprosium gallium garnet and the like according to the Czochralski method, when the velocity of rotation of the crystal during growth of a slender part is made lower than the velocity of rotation of the crystal during growth of a body portion, single crystals free of defects such as dislocation or facet can be obtained.
摘要翻译：在生长单晶钆镓石榴石，镝镓石榴石等时，根据切克劳斯基法，当细长部分生长过程中晶体的旋转速度低于晶体生长期间的旋转速度时主体部分，可以获得没有诸如位错或小面的缺陷的单晶。

9. 发明授权

US6010794A Magnetic recording media for longitudinal recording 失效
公开(公告)号：US6010794A
公开(公告)日：2000-01-04
申请号：US852096
申请日：1997-05-06
申请人： Hiroyuki Suzuki , Yoshihiro Shiroishi , Sadao Hishiyama , Tomoyuki Ohno , Yotsuo Yahisa , Yoshibumi Matsuda , Norikazu Tsumita , Masaki Ohura , Takaaki Shirakura , Noriyuki Shige , Kazumasa Takagi
发明人： Hiroyuki Suzuki , Yoshihiro Shiroishi , Sadao Hishiyama , Tomoyuki Ohno , Yotsuo Yahisa , Yoshibumi Matsuda , Norikazu Tsumita , Masaki Ohura , Takaaki Shirakura , Noriyuki Shige , Kazumasa Takagi
摘要： A magnetic recording medium including a substrate and a magnetic layer on the substrate which is a Co-based alloy including Pt and/or Ir, including at least one of Ti, Zr, Hr, V, Nb, Ta, Cr, Mo, W, Ge, and Si, and including oxygen. A magnetic memory apparatus including the magnetic recording medium.

10. 发明授权

US5550389A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US5550389A
公开(公告)日：1996-08-27
申请号：US171869
申请日：1993-12-22
申请人： Toshikazu Nishino , Mutsuko Hatano , Haruhiro Hasegawa , Hideaki Nakane , Ushio Kawabe , Kazuo Saitoh , Mitsuo Suga , Kazumasa Takagi
发明人： Toshikazu Nishino , Mutsuko Hatano , Haruhiro Hasegawa , Hideaki Nakane , Ushio Kawabe , Kazuo Saitoh , Mitsuo Suga , Kazumasa Takagi
IPC分类号： H01L39/14 , H01L29/06
CPC分类号： H01L39/145
摘要： A superconducting device low in power dissipation and high in operating speed is fabricated by use of a combination of a superconductor material and a semiconductor material. The superconducting device having a low power dissipation and high operating speed characteristic according to the present invention is suitable for configuring a large-scale integrated circuit.
摘要翻译：通过使用超导体材料和半导体材料的组合来制造功耗低且工作速度高的超导装置。根据本发明的具有低功耗和高工作速度特性的超导装置适用于配置大规模集成电路。

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