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1. 发明授权

US6101872A Sensor having a thin film element 失效
标题翻译：传感器具有薄膜元件
公开(公告)号：US6101872A
公开(公告)日：2000-08-15
申请号：US036732
申请日：1998-03-09
申请人： Martin Zechnall , Christoph Treutler , Manfred Lembke , Hans Hecht , Jiri Marek , Herbert Goebel , Martin Willmann , Hans-Ulrich Gruber , Andreas Lock , Klaus Heyers , Joerg Buth
发明人： Martin Zechnall , Christoph Treutler , Manfred Lembke , Hans Hecht , Jiri Marek , Herbert Goebel , Martin Willmann , Hans-Ulrich Gruber , Andreas Lock , Klaus Heyers , Joerg Buth
IPC分类号： G01F1/68 , G01F1/684 , G01F1/692 , G01K7/18 , H01L21/822 , H01L27/04
CPC分类号： G01F1/6845 , G01F1/692 , G01K7/183
摘要： A sensor has a thin film element, the thin film element having a temperature-dependent electrical resistance. The thin film element includes a platinum layer, which is doped with zircon or zircon oxide. The thin film element can be arranged on a membrane to create a mass airflow sensor.
摘要翻译：传感器具有薄膜元件，薄膜元件具有温度依赖性电阻。薄膜元件包括掺杂有锆石或氧化锆的铂层。薄膜元件可以布置在膜上以产生质量气流传感器。

2. 发明授权

US5542558A Method for manufacturing micro-mechanical components using selective anodization of silicon 失效
标题翻译：使用硅的选择性阳极氧化制造微机械部件的方法
公开(公告)号：US5542558A
公开(公告)日：1996-08-06
申请号：US308245
申请日：1994-09-19
申请人： Gerhard Benz , Jiri Marek , Martin Willmann , Frank Bantien , Horst Muenzel , Franz Laermer , Michael Offenberg , Andrea Schilp
发明人： Gerhard Benz , Jiri Marek , Martin Willmann , Frank Bantien , Horst Muenzel , Franz Laermer , Michael Offenberg , Andrea Schilp
IPC分类号： H01L29/84 , F16C11/06 , F16C23/04 , F16C33/10 , G01P15/08 , H01L21/3063 , H01L21/316 , H01L21/306
CPC分类号： G01P15/0802 , Y10S438/96
摘要： A method for manufacturing micro-mechanical components in which a structure is produced on a silicon layer, which is to be undercut in a further step. The silicon is selectively anodized for this undercutting operation. Thus, the method enables the manufacturing of micro-mechanical components that can be integrated together with bipolar circuit elements.
摘要翻译：一种制造微机械部件的方法，其中在另一步骤中将被切削的硅层上产生结构。对于该底切操作，硅被选择性地阳极氧化。因此，该方法能够制造可与双极电路元件集成在一起的微机械部件。

3. 发明授权

US5461917A Acceleration sensor 失效
标题翻译：加速度传感器
公开(公告)号：US5461917A
公开(公告)日：1995-10-31
申请号：US131821
申请日：1993-10-05
申请人： Jiri Marek , Dietrich Schubert , Helmut Baumann , Horst Muenzel , Michael Offenberg , Martin Willmann
发明人： Jiri Marek , Dietrich Schubert , Helmut Baumann , Horst Muenzel , Michael Offenberg , Martin Willmann
IPC分类号： G01P15/02 , G01P15/08 , G01P15/125 , H01L29/84
CPC分类号： G01P15/0802 , G01P15/125 , G01P2015/0828
摘要： An acceleration sensor and a method of making an acceleration sensor is described in which a movable sensor element is located in a hollow space formed in the middle of three silicon plates. During production, air can be removed from the hollow space through a hole in one of the two outer plates. The hole is then closed by an additional plate, which allows for a defined pressure to be set in the hollow space.
摘要翻译：描述了一种加速度传感器和制造加速度传感器的方法，其中可移动传感器元件位于形成在三个硅板中间的中空空间中。在生产过程中，空气可以通过两个外板中的一个的孔从中空空间移除。然后孔被附加的板封闭，这允许将限定的压力设定在中空空间中。

4. 发明授权

US5324410A Device for one-sided etching of a semiconductor wafer 失效
标题翻译：用于半导体晶片的单面蚀刻的装置
公开(公告)号：US5324410A
公开(公告)日：1994-06-28
申请号：US969235
申请日：1993-02-01
申请人： Nils Kummer , Jiri Marek , Martin Willmann , Guenther Findler
发明人： Nils Kummer , Jiri Marek , Martin Willmann , Guenther Findler
IPC分类号： H01L21/304 , H01L21/00 , H01L21/306 , H01L21/687 , C25D17/06 , C25F7/00
CPC分类号： H01L21/67126 , H01L21/67075 , H01L21/67086 , H01L21/68721 , H01L21/68735
摘要： A device for one-sided etching of a semiconductor wafer (silicon wafer) is proposed, which consists in the manner of an etching box of a trough-shaped basic body (3, 23) and a lid (2, 22) which matches the latter hermetically. The lid (2, 22) has on the topside an opening (5, 25) for the passage of the etching liquid. The etching box bears at least two O-rings (7, 8, 27, 28), of which one is arranged centrally in the basic body (3, 23) and the other centrally in the lid (2, 22). The wafer (1) is clamped between the O-rings (7, 8, 27, 28). A wire (10) connected to the wafer by means of a plate of a spring contact (11, 41) is guided out of the etching box through a bore (4) extending through the basic body (3, 23).
摘要翻译： PCT No.PCT / DE91 / 00545 Sec。 371日期：1993年2月1日 102（e）1993年2月1日PCT PCT 1991年7月2日PCT公布。出版物WO92 / 02948 日本1992年2月20日提出了一种用于半导体晶片（硅晶片）的单面蚀刻的装置，其包括槽形基体（3,23）和盖（ 2，22）与后者密切相配。盖（2,22）在顶部具有用于蚀刻液体通过的开口（5,25）的上侧。蚀刻盒具有至少两个O形环（7,8,27,28），其中一个设置在基体（3,23）的中心，另一个位于盖（2,22）的中心。晶片（1）夹在O形环（7,8,27,28）之间。通过弹簧触头（11,41）的板连接到晶片的导线（10）通过穿过基体（3,23）的孔（4）从蚀刻箱引出。

5. 发明授权

US5216273A Microvalve of multilayer silicon construction 失效
标题翻译：多层硅结构微观尺度
公开(公告)号：US5216273A
公开(公告)日：1993-06-01
申请号：US762940
申请日：1991-09-19
申请人： Christian Doering , Thomas Grauer , Michael Mettner , Armin Schuelke , Jiri Marek , Hans-Peter Trah , Joerg Muchow , Martin Willmann
发明人： Christian Doering , Thomas Grauer , Michael Mettner , Armin Schuelke , Jiri Marek , Hans-Peter Trah , Joerg Muchow , Martin Willmann
IPC分类号： F16K31/02 , F15C5/00 , F16K99/00
CPC分类号： F16K99/0001 , F15C5/00 , F16K99/0015 , F16K99/0051 , F16K2099/0074 , F16K2099/008
摘要： A microwave is made of a stack of layers. A sculptured silicon substrate is held between two covers each consisting of one or more layers. The inlet and the outlet of the microvalve are formed by perforations in the respective covers. A central valve plate is sculptured out of the silicon substrate with surfaces respectively facing the two covers in the region of the inlet and outlet in a symmetrical fashion. The valve plate is connected to the outer frame portion of the silicon substrate by one or more silicon strips. The valve plate is also shaped as a closure member near the inlet and/or the outlet. Electrodes are provided on the covers opposite the valve plate so that the valve can be electrostatically actuated with the valve plate serving as counterelectrode for these electrodes on the covers.
摘要翻译：微波由一叠层组成。雕刻的硅衬底保持在两个盖之间，每个盖由一层或多层组成。微型阀的入口和出口由相应盖子中的穿孔形成。中心阀板从硅衬底雕刻出来，其表面分别以对称的方式在入口和出口的区域中面对两个盖。阀板通过一个或多个硅带连接到硅衬底的外框部分。阀板也在入口和/或出口附近形成为封闭构件。电极设置在与阀板相对的盖上，使得阀可以被静电驱动，阀板用作反射电极，用于盖上的这些电极。

6. 发明授权

US5355569A Method of making sensor 失效
标题翻译：制作传感器的方法
公开(公告)号：US5355569A
公开(公告)日：1994-10-18
申请号：US951169
申请日：1992-09-25
申请人： Jiri Marek , Helmut Baumann , Guenther Findler , Michael Offenberg , Martin Willmann
发明人： Jiri Marek , Helmut Baumann , Guenther Findler , Michael Offenberg , Martin Willmann
IPC分类号： G01P15/08 , G01P15/125 , H01L29/84 , H01G5/16
CPC分类号： G01P15/0802 , G01P15/125 , G01P2015/0828 , Y10T29/43 , Y10T29/435 , Y10T29/4979 , Y10T29/49792
摘要： A method for producing capacitive sensors which is used in particular for the parallel production of capacitive sensors with exactly defined stray capacitance. For this purpose, troughs (15, 16, 17) are cut along or parallel to the splitting lines (6), so that adjustment errors in the position of the cut, during separation of the sensors, and variations in the cut width have no effect on the stray capacitance.
摘要翻译：一种用于制造电容传感器的方法，其特别用于并行生产具有精确定义的杂散电容的电容式传感器。为此，沿分离线（6）切割槽（15,16,17），从而在分离传感器期间切割位置的调节误差和切割宽度的变化没有影响杂散电容。

7. 发明授权

US5273939A Method of assembling micromechanical sensors 失效
标题翻译：组装微机械传感器的方法
公开(公告)号：US5273939A
公开(公告)日：1993-12-28
申请号：US828106
申请日：1992-01-30
申请人： Rolf Becker , Klaus Jaeckel , Jiri Marek , Frank Bantien , Helmut Baumann , Kurt Weiblen , Martin Willmann
发明人： Rolf Becker , Klaus Jaeckel , Jiri Marek , Frank Bantien , Helmut Baumann , Kurt Weiblen , Martin Willmann
IPC分类号： G01R33/07 , B81B7/00 , G01L9/00 , G01P15/08 , H01L29/84 , H01L43/04 , H10L21/60
CPC分类号： B81B7/0048 , G01L19/147 , G01P15/0802 , G01P2015/0828 , H01L2224/48091 , H01L2224/48227
摘要： A method is proposed for assembling micromechanical sensors, in particular Hall sensors, or pressure or acceleration sensors, in which at least one silicon sensor element is applied to a substrate. The at least one silicon sensor element is joined to the substrate via at least one assembly pedestal, the cap faces of which are kept small compared with the surface of the silicon sensor element, so that a gap exists between the substrate and the silicon sensor element except for the region of the at least one assembly pedestal.
摘要翻译：提出了一种用于组装微机械传感器，特别是霍尔传感器或压力或加速度传感器的方法，其中至少一个硅传感器元件被施加到基板。所述至少一个硅传感器元件经由至少一个组装基座接合到所述基板，所述组件基座的盖面与所述硅传感器元件的表面相比保持较小，使得在所述基板和所述硅传感器元件之间存在间隙除了至少一个组装基座的区域之外。

8. 发明授权

US06192749B1 Mass flow sensor with rupture detection 失效
标题翻译：质量流量传感器具有破裂检测
公开(公告)号：US06192749B1
公开(公告)日：2001-02-27
申请号：US09132863
申请日：1998-08-12
申请人： Jiri Marek , Wolfgang Mueller
发明人： Jiri Marek , Wolfgang Mueller
IPC分类号： G01F168
CPC分类号： G01F1/6845 , G01F25/0007
摘要： A mass flow sensor having a thin substrate and a resistor element arranged on the thin substrate. The thin substrate is stretched on a fixed substrate. In a stretched area, at which, in response to mechanical loading of the thin substrate, the mechanical stresses concentrate, a resistor element for detecting ruptures is arranged. As a result of a rupture in the stretched area, this rupture-detection resistor is interrupted, and the rupture can be confirmed due to the sudden increase in the resistance of the resistor, caused thereby.
摘要翻译：一种质量流量传感器，其具有薄的衬底和布置在薄衬底上的电阻器元件。将薄衬底在固定衬底上拉伸。在拉伸区域中，响应于薄基板的机械负载，机械应力集中，设置用于检测断裂的电阻元件。由于拉伸区域的断裂，该断裂检测电阻器被中断，由此引起的电阻器的电阻突然上升，可以确认断裂。

9. 发明授权

US5569852A Capacitive accelerometer sensor and method for its manufacture 失效
标题翻译：电容式加速度传感器及其制造方法
公开(公告)号：US5569852A
公开(公告)日：1996-10-29
申请号：US355760
申请日：1994-12-14
申请人： Jiri Marek , Frank Bantien , Horst Muenzel , Michael Offenberg
发明人： Jiri Marek , Frank Bantien , Horst Muenzel , Michael Offenberg
IPC分类号： G01P15/08 , G01P15/125 , H01L29/84
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814
摘要： A contacting of a capacitive accelerometer sensor of monocrystalline material is achieved by a capacitive accelerometer sensor having a structure etched out of a monocrystalline layer arranged on a substrate, including a seismic mass that is only joined to the substrate by suspension segments and executing a movement in its longitudinal direction in response to the occurrence of an acceleration of parallel, plate-like first fingers extending out from this mass at right angles to their longitudinal direction and of plate-like second fingers running parallel to the first fingers and anchored to the substrate. The first and second fingers form a capacitor arrangement. The suspension segments, which are anchored with their end region that is distant from the seismic mass to the substrate, and second fingers are electrically isolated, by an isolation strip, from the other remaining layer of monocrystalline material. A passivation layer extends over the isolation strip, and at least partially over the remaining layer. Conductors arranged on the passivation layer and serving as connecting leads for the capacitor arrangement extend across the isolation strip up to the connections of the capacitor arrangement, and are contacted there.
摘要翻译：单晶材料的电容式加速度计传感器的接触是通过电容式加速度计传感器实现的，该传感器具有从布置在基底上的单晶层中蚀刻出的结构，包括仅通过悬挂段连接到基底的地震质量块，其纵向方向响应于从该质量块与其纵向方向成直角地延伸的平行的板状第一指状物的加速度以及平行于第一指状物并且锚固到基底的板状第二指状物的加速度。第一和第二指形成电容器布置。将其远离地震质体的端部区域锚定到基底的悬挂段和第二指状物通过隔离带与另一个剩余的单晶材料层电隔离。钝化层在隔离带上延伸，并且至少部分地覆盖剩余层。布置在钝化层上并且用作电容器布置的连接引线的导体跨过隔离带延伸直到电容器装置的连接，并且在那里接触。

10. 发明授权

US5151763A Acceleration and vibration sensor and method of making the same 失效
标题翻译：加速和振动传感器及其制作方法
公开(公告)号：US5151763A
公开(公告)日：1992-09-29
申请号：US631623
申请日：1990-12-21
申请人： Jiri Marek , Frank Bantien , Dietmar Haack , Martin Warth
发明人： Jiri Marek , Frank Bantien , Dietmar Haack , Martin Warth
IPC分类号： G01H11/06 , G01P15/08 , G01P15/125 , H01L21/822 , H01L27/04 , H01L29/84 , H04R19/00
CPC分类号： G01P15/125 , G01H11/06 , G01P15/0802 , G01P2015/0814 , H04R19/005
摘要： A semiconductor plate having an epitaxial layer of a conductivity type opposite to that of the substrate on which it is formed has a depression, including one or more elongate channels. The depression is etched into a depth passing entirely through the epitaxial layer to isolate at least one tongue extending from a tongue pedestal into the etched depression and having parallel major sides which are perpendicular to the principal planes of the semiconductor plate. The tongue is under-etched so that it will be free to vibrate by motion in directions parallel to the principal planes of the plate. One of the major sides of the tongue faces a stationary electrode across a gap and the electrode and the tongue are insulated from each other, at least in one embodiment, by the fact that the etched depression extends all the way through the epitaxial layer in its depth. Deflection or vibration of the tongue changes the capacitance between the electrode and the tongue and contacts are provided for measuring the capacitance. Various embodiments utilizing multiple tongues and one or more electrodes are shown.
摘要翻译：具有与形成有外延层的基板的导电类型相反的外延层的半导体板具有包括一个或多个细长沟道的凹陷部。将凹陷蚀刻到完全穿过外延层的深度中，以将至少一个从舌基座延伸的舌片隔离成蚀刻的凹陷部，并且具有垂直于半导体板的主平面的平行的主边。舌头被低蚀刻，使得它可以通过平行于板的主平面的方向的运动而自由振动。至少在一个实施例中，舌片的主要侧面之一跨越间隙固定电极，并且电极和舌片彼此绝缘，因为蚀刻的凹陷一直延伸穿过外延层的事实深度。舌头的偏转或振动会改变电极和舌头之间的电容，并提供触点用于测量电容。示出了利用多个舌片和一个或多个电极的各种实施例。

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