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    • 1. 发明授权
    • Implantable drug infusion device having a flow regulator
    • 具有流量调节器的可植入药物输注装置
    • US06203523B1
    • 2001-03-20
    • US09017194
    • 1998-02-02
    • Markus HallerPhilippe RenaudChristian Amacker
    • Markus HallerPhilippe RenaudChristian Amacker
    • A61M1100
    • A61M5/14276A61M5/16813G05D7/0113
    • An implantable drug infusion device which features an improved flow regulator which permits the flow rate to be independent of reservoir pressure within a given pressure range. The flow regulator features a membrane having a hole, the membrane itself positioned above a bottom layer such that sufficient deflection of the membrane causes the membrane to engage against the bottom layer. As liquid flows through the hole a drag force is applied to the edge of the hole resulting in a deflection of the membrane. Once contact is made between the membrane and the bottom layer, then flow reduced. In a further embodiment the bottom layer features a variable flow channel such that upon membrane deflection flow may only proceed through the hole and through the flow channel. By tailoring the shape and length of the variable flow channel the flow characteristics of the regulator versus pressure may be adjusted. In a further embodiment the flow regulator also features a flow sensor integrated therewith. This integrated sensor provides a measurement of flow and may be coupled to the flow regulator to provide feedback thereto.
    • 一种可植入药物输注装置,其具有改进的流量调节器,其允许流量独立于给定压力范围内的储层压力。 流动调节器具有具有孔的膜,膜本身定位在底层上方,使得膜的足够偏转导致膜与底层接合。 当液体流过孔时,阻力被施加到孔的边缘,导致膜的偏转。 一旦在膜和底层之间进行接触,则流动减少。 在另一个实施方案中,底层具有可变流动通道,使得在膜偏转时,流动可以仅通过孔并通过流动通道。 通过调节可变流动通道的形状和长度,可以调整调节器与压力的流动特性。 在另一实施例中,流量调节器还具有与其集成的流量传感器。 该集成传感器提供流量测量并且可以耦合到流量调节器以向其提供反馈。
    • 2. 发明授权
    • Implantable drug infusion device having a flow regulator
    • 具有流量调节器的可植入药物输注装置
    • US06878135B1
    • 2005-04-12
    • US09712237
    • 2000-11-15
    • Markus HallerPhilippe RenaudChristian Amacker
    • Markus HallerPhilippe RenaudChristian Amacker
    • A61M5/142A61M5/168G05D7/01A61M5/00
    • A61M5/14276A61M5/16813G05D7/0113
    • An implantable drug infusion device which features an improved flow regulator which permits the flow rate to be independent of reservoir pressure within a given pressure range. The flow regulator features a membrane having a hole, the membrane itself positioned above a bottom layer such that sufficient deflection of the membrane causes the membrane to engage against the bottom layer. As liquid flows through the hole a drag force is applied to the edge of the hole resulting in a deflection of the membrane. Once contact is made between the membrane and the bottom layer, then flow reduced. In a further embodiment the bottom layer features a variable flow channel such that upon membrane deflection flow may only proceed through the hole and through the flow channel. By tailoring the shape and length of the variable flow channel the flow characteristics of the regulator versus pressure may be adjusted. In a further embodiment the flow regulator also features a flow sensor integrated therewith. This integrated sensor provides a measurement of flow and may be coupled to the flow regulator to provide feedback thereto.
    • 一种可植入药物输注装置,其具有改进的流量调节器,其允许流量独立于给定压力范围内的储层压力。 流动调节器具有具有孔的膜,膜本身定位在底层上方,使得膜的足够偏转导致膜与底层接合。 当液体流过孔时,阻力被施加到孔的边缘,导致膜的偏转。 一旦在膜和底层之间进行接触,则流动减少。 在另一个实施方案中,底层具有可变流动通道,使得在膜偏转时,流动可以仅通过孔并通过流动通道。 通过调节可变流动通道的形状和长度,可以调整调节器与压力的流动特性。 在另一实施例中,流量调节器还具有与其集成的流量传感器。 该集成传感器提供流量测量并且可以耦合到流量调节器以向其提供反馈。
    • 8. 发明授权
    • Semiconductor structure, an integrated circuit including a semiconductor structure and a method for manufacturing a semiconductor structure
    • 半导体结构,包括半导体结构的集成电路和半导体结构的制造方法
    • US08390091B2
    • 2013-03-05
    • US13143548
    • 2009-02-03
    • Philippe Renaud
    • Philippe Renaud
    • H01L29/47
    • H01L29/0847H01L21/746H01L27/0605H01L27/0629H01L29/2003H01L29/4175H01L29/517H01L29/518H01L29/66462H01L29/7787H01L29/872
    • A monolithic semiconductor structure includes a stack of layers. The stack includes a substrate; a first layer made from a first semiconductor material; and a second layer made from a second semiconductor material. The first layer is situated between the substrate and the second layer and at least one of the first semiconductor material and the second semiconductor material contains a III-nitride material. The structure includes a power transistor, including a body formed in the stack of layers; a first power terminal at a side of the first layer facing the second layer; a second power terminal at least partly formed in the substrate; and a gate structure for controlling the propagation through the body of electric signals between the first power terminal and the second power terminal. The structure further includes a vertical Schottky diode, including: an anode; a cathode including the substrate, and a Schottky barrier between the cathode and the anode, the Schottky barrier being situated between the substrate and a anode layer in the stack of layers.
    • 单片半导体结构包括一叠层。 堆叠包括基板; 由第一半导体材料制成的第一层; 以及由第二半导体材料制成的第二层。 第一层位于衬底和第二层之间,并且第一半导体材料和第二半导体材料中的至少一个含有III族氮化物材料。 该结构包括功率晶体管,其包括形成在层叠层中的主体; 位于所述第一层的面向所述第二层的一侧的第一电源端子; 至少部分地形成在所述基板中的第二电源端子; 以及栅极结构,用于控制在第一电力端子和第二电力端子之间通过主体的电信号的传播。 该结构还包括垂直肖特基二极管,包括:阳极; 包括衬底的阴极和在阴极和阳极之间的肖特基势垒,肖特基势垒位于衬底和堆叠层中的阳极层之间。