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    • 1. 发明授权
    • Maintaining the state of a MEMS device in the event of a power failure
    • 在电源故障的情况下保持MEMS器件的状态
    • US06514781B2
    • 2003-02-04
    • US09900841
    • 2001-07-07
    • Mark W. ChangScott D. DaltonMichael J. DanemanTimothy BeerlingStephen F. PanykoGary M. Zalewski
    • Mark W. ChangScott D. DaltonMichael J. DanemanTimothy BeerlingStephen F. PanykoGary M. Zalewski
    • H01L2100
    • G02B26/0841
    • A method and apparatus for maintaining the state of a MEMS device in the event of a power failure are disclosed. The apparatus and method may be used with a MEMS device generally having one or more MEMS elements moveably coupled to a substrate that uses electrostatic clamping force to sustain the state of the MEMS element. According to the method, a capacitive or other charge-storing circuit is coupled between a clamping surface and an electrical ground. During normal operation, a clamping voltage is applied between the clamping surface and at least one MEMS element to retain the at least one MEMS element against the clamping surface. In the event of a power failure, the source of the clamping voltage and other circuit paths to ground are isolated from the clamping surface. The charge-storing circuit maintains an electric charge on the clamping surface. Leaky circuit paths to ground may be isolated from the clamping surface by an isolator element configured to electrically isolate the clamping surface in the event of a power failure. The isolator element may include an opto-isolator or a low leakage diode.
    • 公开了一种用于在电源故障的情况下保持MEMS装置的状态的方法和装置。 该装置和方法可以与通常具有一个或多个MEMS元件的MEMS器件一起使用,所述MEMS元件可移动地耦合到使用静电夹持力来维持MEMS元件的状态的基板。 根据该方法,电容或其他电荷存储电路耦合在夹紧表面和电接地之间。 在正常操作期间,钳位电压施加在夹紧表面和至少一个MEMS元件之间以将至少一个MEMS元件保持抵靠夹紧表面。 在电源故障的情况下,钳位电压的来源和其他到地的电路路径与夹紧表面隔离。 电荷存储电路在夹持表面上保持电荷。 泄漏电路到地的路径可以通过隔离器元件与夹紧表面隔离,隔离器元件被配置为在电源故障的情况下电隔离夹紧表面。 隔离元件可以包括光隔离器或低泄漏二极管。
    • 3. 发明授权
    • Tools, systems, and methods for inserting an electrode array portion of a lead into a bodily orifice
    • 用于将铅的电极阵列部分插入身体孔口的工具,系统和方法
    • US08774944B2
    • 2014-07-08
    • US12824122
    • 2010-06-25
    • Chuladatta ThenuwaraRosa GallegosTimothy Beerling
    • Chuladatta ThenuwaraRosa GallegosTimothy Beerling
    • A61N1/00A61B17/34
    • A61B17/3468A61B2017/00787A61N1/0541
    • Exemplary insertion tools, systems, and methods for inserting an electrode array portion of a lead into a bodily orifice are described herein. An exemplary insertion tool includes a handle assembly, a retractor assembly disposed at least partially within the handle assembly, and a slider assembly disposed at least partially within the handle assembly. The retractor assembly may include a stiffening member configured to be inserted into an electrode array portion and a spring-loaded retractor member coupled to the stiffening member and configured to move from a distal position to a proximal position to at least partially retract the stiffening member from the electrode array portion. The slider assembly may be configured to selectively retain the spring-loaded retractor member and further configured to release the spring-loaded retractor member to move from the distal position to the proximal position in response to actuation by a user of the slider assembly.
    • 本文描述了用于将铅的电极阵列部分插入身体孔的示例性插入工具,系统和方法。 示例性插入工具包括手柄组件,至少部分地设置在手柄组件内的牵开器组件,以及至少部分地设置在手柄组件内的滑块组件。 牵开器组件可以包括构造成插入到电极阵列部分中的加强构件和联接到加强构件的弹簧加载的牵开器构件,并且构造成从远侧位置移动到近侧位置以至少部分地将加强构件从 电极阵列部分。 滑动器组件可以被配置为选择性地保持弹簧加载的牵开器构件,并进一步构造成响应于使用者的滑动器组件的致动而释放弹簧加载的牵开器构件以从远侧位置移动到近侧位置。
    • 4. 发明授权
    • Integrated wire carrier for electrode array
    • 电极阵列集成线载体
    • US08712554B2
    • 2014-04-29
    • US12506964
    • 2009-07-21
    • Timothy BeerlingChuladatta Thenuwara
    • Timothy BeerlingChuladatta Thenuwara
    • A61N1/00
    • A61N1/0541A61F11/004Y10T29/49185
    • A cochlear lead includes a plurality electrodes forming an electrode array configured to stimulate an auditory nerve from within a cochlea; a lead body connected to the electrode array; a plurality of wires passing through the lead body and connecting to the plurality of electrodes; an integrated wire carrier extending between an exit of the wires from the lead body and a first electrode in the electrode array, the integrated wire carrier comprising a cavity along its longitudinal axis configured to contain the plurality of wires and shape the plurality of wires into a wire bundle in which the plurality of wires passing through the integrated wire carrier are substantially parallel to the longitudinal axis of the integrated wire carrier; and a flexible body encapsulating the integrated wire carrier and the wires.
    • 耳蜗引线包括形成电极阵列的多个电极,其构造成从耳蜗内刺激听觉神经; 连接到电极阵列的引线体; 穿过所述引线体并连接到所述多个电极的多条电线; 在导体本体的导线出口和电极阵列中的第一电极之间延伸的集成导线载体,所述集成导线架包括沿其纵向轴线的空腔,所述腔体构造为容纳所述多根导线并将所述多根导线成形为 电线束,其中穿过集成线载体的多条电线基本上平行于集成线载体的纵向轴线; 以及封装集成线载体和电线的柔性体。
    • 7. 发明申请
    • Microfluidic Apparatuses with Nanochannels
    • 具有纳米通道的微流体装置
    • US20080180188A1
    • 2008-07-31
    • US11669682
    • 2007-01-31
    • Timothy BeerlingKarsten G. KraiczekReid A. Brennen
    • Timothy BeerlingKarsten G. KraiczekReid A. Brennen
    • H01P5/10
    • G01N30/6095B01L3/5027B01L2200/12B01L2300/0877B01L2300/0887B82Y15/00Y10T436/2575
    • In some embodiments of the present invention, the buried silicon oxide technology is employed in the fabrication of fluid channels, particularly nanochannels. For example, a fluid channel can be made in a buried silicon oxide layer by etching the buried oxide layer with a method that selectively removes silicon oxide but not silicon. Thus, one dimension of the resulting fluid channel is limited by the thickness of the buried oxide layer. It is possible to manufacture a very thin buried oxide layer with great precision, thus a nanochannel can be fabricated in a controlled manner. Moreover, in addition to buried oxide, any pairs of substances with a high etch ratio with respect to each other can be used in the same way. Further provided are the fluid channels, apparatuses, devices and systems comprising the fluid channels, and uses thereof.
    • 在本发明的一些实施例中,掩埋氧化硅技术用于制造流体通道,特别是纳米通道。 例如,通过用选择性地去除氧化硅而不是硅的方法蚀刻掩埋氧化物层,可以在掩埋氧化硅层中制造流体通道。 因此,所得流体通道的一个尺寸受到掩埋氧化物层的厚度的限制。 可以以很高的精度制造非常薄的掩埋氧化物层,因此可以以受控的方式制造纳米通道。 此外,除了掩埋氧化物之外,可以以相同的方式使用具有相对于彼此的高蚀刻比的任何物质对。 进一步提供了包括流体通道的流体通道,装置,装置和系统及其用途。