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    • 1. 发明申请
    • Microfluidic Apparatuses with Nanochannels
    • 具有纳米通道的微流体装置
    • US20080180188A1
    • 2008-07-31
    • US11669682
    • 2007-01-31
    • Timothy BeerlingKarsten G. KraiczekReid A. Brennen
    • Timothy BeerlingKarsten G. KraiczekReid A. Brennen
    • H01P5/10
    • G01N30/6095B01L3/5027B01L2200/12B01L2300/0877B01L2300/0887B82Y15/00Y10T436/2575
    • In some embodiments of the present invention, the buried silicon oxide technology is employed in the fabrication of fluid channels, particularly nanochannels. For example, a fluid channel can be made in a buried silicon oxide layer by etching the buried oxide layer with a method that selectively removes silicon oxide but not silicon. Thus, one dimension of the resulting fluid channel is limited by the thickness of the buried oxide layer. It is possible to manufacture a very thin buried oxide layer with great precision, thus a nanochannel can be fabricated in a controlled manner. Moreover, in addition to buried oxide, any pairs of substances with a high etch ratio with respect to each other can be used in the same way. Further provided are the fluid channels, apparatuses, devices and systems comprising the fluid channels, and uses thereof.
    • 在本发明的一些实施例中,掩埋氧化硅技术用于制造流体通道,特别是纳米通道。 例如,通过用选择性地去除氧化硅而不是硅的方法蚀刻掩埋氧化物层,可以在掩埋氧化硅层中制造流体通道。 因此,所得流体通道的一个尺寸受到掩埋氧化物层的厚度的限制。 可以以很高的精度制造非常薄的掩埋氧化物层,因此可以以受控的方式制造纳米通道。 此外,除了掩埋氧化物之外,可以以相同的方式使用具有相对于彼此的高蚀刻比的任何物质对。 进一步提供了包括流体通道的流体通道,装置,装置和系统及其用途。
    • 2. 发明授权
    • Microfluidic apparatuses with nanochannels
    • 具有纳米通道的微流控装置
    • US08168140B2
    • 2012-05-01
    • US11669682
    • 2007-01-31
    • Timothy BeerlingKarsten G. KraiczekReid A. Brennen
    • Timothy BeerlingKarsten G. KraiczekReid A. Brennen
    • B01L3/00B01L3/18G01N1/10
    • G01N30/6095B01L3/5027B01L2200/12B01L2300/0877B01L2300/0887B82Y15/00Y10T436/2575
    • In some embodiments of the present invention, the buried silicon oxide technology is employed in the fabrication of fluid channels, particularly nanochannels. For example, a fluid channel can be made in a buried silicon oxide layer by etching the buried oxide layer with a method that selectively removes silicon oxide but not silicon. Thus, one dimension of the resulting fluid channel is limited by the thickness of the buried oxide layer. It is possible to manufacture a very thin buried oxide layer with great precision, thus a nanochannel can be fabricated in a controlled manner. Moreover, in addition to buried oxide, any pairs of substances with a high etch ratio with respect to each other can be used in the same way. Further provided are the fluid channels, apparatuses, devices and systems comprising the fluid channels, and uses thereof.
    • 在本发明的一些实施例中,掩埋氧化硅技术用于制造流体通道,特别是纳米通道。 例如,通过用选择性地去除氧化硅而不是硅的方法蚀刻掩埋氧化物层,可以在掩埋氧化硅层中制造流体通道。 因此,所得流体通道的一个尺寸受到掩埋氧化物层的厚度的限制。 可以以很高的精度制造非常薄的掩埋氧化物层,因此可以以受控的方式制造纳米通道。 此外,除了掩埋氧化物之外,可以以相同的方式使用具有相对于彼此的高蚀刻比的任何物质对。 进一步提供了包括流体通道的流体通道,装置,装置和系统及其用途。