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    • 10. 发明授权
    • Semiconducting polymer field effect transistor
    • 半导体聚合物场效应晶体管
    • US06204515B1
    • 2001-03-20
    • US09470367
    • 1999-12-22
    • Mark T. BerniusEdmund P. Woo
    • Mark T. BerniusEdmund P. Woo
    • H01L3544
    • H01L51/0038H01L51/0036H01L51/0039H01L51/0043H01L51/0059H01L51/0516H01L51/052H01L51/0525H01L51/0545
    • A field effect transistor is made of five parts. The first part is an insulator layer, the insulator layer being an electrical insulator such as silica, the insulator layer having a first side and a second side. The second part is a gate, the gate being an electrical conductor such as silver, the gate being positioned on the first side of the insulator layer. The third part is a semiconductor layer, the semiconductor layer including a polymer, at least ten weight percent of the monomer units of the polymer being a 9-substituted fluorene unit and/or a 9,9-substituted fluorene unit, the semiconductor layer having a first side, a second side, a first end and a second end, the second side of the semiconductor layer being on the second side of the insulator layer. The fourth part is a source, the source being an electrical conductor such as silver, the source being in electrical contact with the first end of the semiconductor layer. The fifth part is a drain, the drain being an electrical conductor such as silver, the drain being in electrical contact with the second end of the semiconductor layer. A negative voltage bias applied to the gate causes the formation of a conduction channel in the semiconductor layer from the source to the drain. On the other hand, a positive bias applied to the gate causes the formation of an electron conducting channel in the semiconductor layer.
    • 场效应晶体管由五部分组成。 第一部分是绝缘体层,绝缘体层是诸如二氧化硅的电绝缘体,绝缘体层具有第一面和第二面。 第二部分是栅极,栅极是诸如银的电导体,栅极位于绝缘体层的第一侧上。 第三部分是半导体层,半导体层包括聚合物,聚合物的单体单元的至少10重量%是9-取代的芴单元和/或9,9-取代的芴单元,所述半导体层具有 第一侧,第二侧,第一端和第二端,所述半导体层的第二侧在绝缘体层的第二侧上。 第四部分是源,源是诸如银的电导体,源与半导体层的第一端电接触。 第五部分是漏极,漏极是诸如银的电导体,漏极与半导体层的第二端电接触。 施加到栅极的负电压偏压导致从源极到漏极在半导体层中形成导电沟道。 另一方面,施加到栅极的正偏压导致在半导体层中形成电子传导沟道。