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1. 发明授权

US06313492B1 Integrated circuit chip produced by using frequency doubling hybrid photoresist 失效
标题翻译：使用倍频混合光刻胶生产的集成电路芯片
公开(公告)号：US06313492B1
公开(公告)日：2001-11-06
申请号：US09110487
申请日：1998-07-06
申请人： Mark C. Hakey , Steven J. Holmes , David V. Horak , Ahmad D. Katnani , Niranjan M. Patel , Paul A. Rabidoux
发明人： Mark C. Hakey , Steven J. Holmes , David V. Horak , Ahmad D. Katnani , Niranjan M. Patel , Paul A. Rabidoux
IPC分类号： H01L27108
CPC分类号： H01L28/82 , G03F7/0045 , G03F7/038 , G03F7/039 , G03F7/095 , H01L21/0274 , H01L21/3085
摘要： A photoresist composition is disclosed having both negative tone and positive tone responses, giving rise to spaces being formed in the areas of diffraction which are exposed to intermediate amounts of radiation energy. This resist material may be used to print doughnut shapes or may be subjected to a second masking step, to print lines. Additionally, larger and smaller features may be obtained using a gray-scale filter in the reticle, to create larger areas of intermediate exposure areas.
摘要翻译：公开了具有负色调和正色调响应的光致抗蚀剂组合物，在曝光到中等辐射能量的衍射区域中形成空间。该抗蚀剂材料可以用于印刷圆环形状或者可以进行第二掩蔽步骤以打印线。另外，可以使用掩模版中的灰度滤光片获得更大和更小的特征，以产生更大面积的中间曝光区域。

2. 发明授权

US06372412B1 Method of producing an integrated circuit chip using frequency doubling hybrid photoresist and apparatus formed thereby 失效
标题翻译：使用倍频混合光致抗蚀剂制造集成电路芯片的方法和由此形成的装置
公开(公告)号：US06372412B1
公开(公告)日：2002-04-16
申请号：US09021924
申请日：1998-02-10
申请人： Mark C. Hakey , Steven J. Holmes , David V. Horak , Ahmad D. Katnani , Niranjan M. Patel , Paul A. Rabidoux
发明人： Mark C. Hakey , Steven J. Holmes , David V. Horak , Ahmad D. Katnani , Niranjan M. Patel , Paul A. Rabidoux
IPC分类号： G03F730
CPC分类号： H01L28/82 , G03F7/0045 , G03F7/038 , G03F7/039 , G03F7/095 , H01L21/0274 , H01L21/3085
摘要： A photoresist composition is disclosed having both negative tone and positive tone responses, giving rise to spaces being formed in the areas of diffraction which are exposed to intermediate amounts of radiation energy. This resist material may be used to print doughnut shapes or may be subjected to a second masking step, to print lines. Additionally, larger and smaller features may be obtained using a gray-scale filter in the reticle, to create larger areas of intermediate exposure areas.
摘要翻译：公开了具有负色调和正色调响应的光致抗蚀剂组合物，在曝光到中等辐射能量的衍射区域中形成空间。该抗蚀剂材料可以用于印刷圆环形状或者可以进行第二掩蔽步骤以打印线。另外，可以使用掩模版中的灰度滤光片获得更大和更小的特征，以产生更大面积的中间曝光区域。

3. 发明授权

US6114082A Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same 失效
标题翻译：具有负和正色调成分的倍频混合光致抗蚀剂及其制备方法
公开(公告)号：US6114082A
公开(公告)日：2000-09-05
申请号：US715287
申请日：1996-09-16
申请人： Mark C. Hakey , Steven J. Holmes , David V. Horak , Ahmad D. Katnani , Niranjan M. Patel , Paul A. Rabidoux
发明人： Mark C. Hakey , Steven J. Holmes , David V. Horak , Ahmad D. Katnani , Niranjan M. Patel , Paul A. Rabidoux
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , G03F7/095 , H01L21/02 , H01L21/027 , H01L21/308 , G03C1/73
CPC分类号： H01L28/82 , G03F7/038 , G03F7/039 , G03F7/095 , H01L21/0274 , H01L21/3085 , G03F7/0045
摘要： A photoresist composition is disclosed having both negative tone and positive tone responses, giving rise to spaces being formed in the areas of diffraction which are exposed to intermediate amounts of radiation energy. This resist material may be used to print doughnut shapes or may be subjected to a second masking step, to print lines. Additionally, larger and smaller features may be obtained using a gray-scale filter in the reticle, to create larger areas of intermediate exposure areas.
摘要翻译：公开了具有负色调和正色调响应的光致抗蚀剂组合物，在曝光到中等辐射能量的衍射区域中形成空间。该抗蚀剂材料可以用于印刷圆环形状或者可以进行第二掩蔽步骤以打印线。另外，可以使用掩模版中的灰度滤光片获得更大和更小的特征，以产生更大面积的中间曝光区域。

4. 发明授权

US06440635B1 Low “K” factor hybrid photoresist 失效
标题翻译：低“K”因子混合光刻胶
公开(公告)号：US06440635B1
公开(公告)日：2002-08-27
申请号：US09675608
申请日：2000-09-29
申请人： Steven J. Holmes , Ahmad D. Katnani , Niranjan M. Patel , Paul A. Rabidoux
发明人： Steven J. Holmes , Ahmad D. Katnani , Niranjan M. Patel , Paul A. Rabidoux
IPC分类号： G03F7039
CPC分类号： G03F7/0045 , G03F7/095 , Y10S430/106 , Y10S430/11 , Y10S430/111
摘要： A photoresist having both positive and negative tone components resulting in a lower “k” factor than the single tone photoresist is disclosed. The hybrid resist may either have the negative tone resist or the positive tone resist as the major portion, while the other tone is a relatively minor portion. For examples, a positive tone resist may include a minor portion of a negative tone cross-linker or a negative tone resist may include positively acting functional groups. The hybrid resist of the present invention allows for wider exposure dosage windows, therefore increasing the yield or performance and line density.
摘要翻译：公开了具有比单色光致抗蚀剂低的“k”因子的具有正和负色调分量的光致抗蚀剂。混合抗蚀剂可以具有负色调抗蚀剂或正色调抗蚀剂作为主要部分，而另一种色调是相对较小的部分。例如，正色调抗蚀剂可以包括负色调交联剂的较小部分或负色调抗蚀剂可以包括正性官能团。本发明的混合抗蚀剂允许更宽的曝光剂量窗口，从而提高产量或性能和线密度。

5. 发明授权

US06284439B1 Method of producing an integrated circuit chip using low “k” factor hybrid photoresist and apparatus formed thereby 失效
标题翻译：使用低“k”因子混合光致抗蚀剂生产集成电路芯片的方法和由此形成的装置
公开(公告)号：US06284439B1
公开(公告)日：2001-09-04
申请号：US09107956
申请日：1998-06-30
申请人： Steven J. Holmes , Ahmad D. Katnani , Niranjan M. Patel , Paul A. Rabidoux
发明人： Steven J. Holmes , Ahmad D. Katnani , Niranjan M. Patel , Paul A. Rabidoux
IPC分类号： G03F730
CPC分类号： G03F7/0045 , G03F7/095 , Y10S430/106 , Y10S430/11 , Y10S430/111
摘要： A photoresist having both positive and negative tone components resulting in a lower “k” factor than the single tone photoresist is disclosed. The hybrid resist may either have the negative tone resist or the positive tone resist as the major portion, while the other tone is a relatively minor portion. For examples, a positive tone resist may include a minor portion of a negative tone cross-linker or a negative tone resist may include positively acting functional groups. The hybrid resist of the present invention allows for wider exposure dosage windows, therefore increasing the yield or performance and line is density.
摘要翻译：公开了具有比单色光致抗蚀剂低的“k”因子的具有正和负色调分量的光致抗蚀剂。混合抗蚀剂可以具有负色调抗蚀剂或正色调抗蚀剂作为主要部分，而另一种色调是相对较小的部分。例如，正色调抗蚀剂可以包括负色调交联剂的较小部分或负色调抗蚀剂可以包括正性官能团。本发明的混合抗蚀剂允许更宽的曝光剂量窗口，因此增加产量或性能，线是密度。

6. 发明授权

US06190829B1 Low “K” factor hybrid photoresist 失效
标题翻译：低“K”因子混合光刻胶
公开(公告)号：US06190829B1
公开(公告)日：2001-02-20
申请号：US08715288
申请日：1996-09-16
申请人： Steve J. Holmes , Ahmad D. Katnani , Niranjan M. Patel , Paul A. Rabidoux
发明人： Steve J. Holmes , Ahmad D. Katnani , Niranjan M. Patel , Paul A. Rabidoux
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/095 , Y10S430/106 , Y10S430/11 , Y10S430/111
摘要： A photoresist having both positive and negative tone components resulting in a lower “k” factor than the single tone photoresist is disclosed. The hybrid resist may either have the negative tone resist or the positive tone resist as the major portion, while the other tone is a relatively minor portion. For examples, a positive tone resist may include a minor portion of a negative tone cross-linker or a negative tone resist may include positively acting functional groups. The hybrid resist of the present invention allows for wider exposure dosage windows, therefore increasing the yield or performance and line density.
摘要翻译：公开了具有比单色光致抗蚀剂低的“k”因子的具有正和负色调分量的光致抗蚀剂。混合抗蚀剂可以具有负色调抗蚀剂或正色调抗蚀剂作为主要部分，而另一种色调是相对较小的部分。例如，正色调抗蚀剂可以包括负色调交联剂的较小部分或负色调抗蚀剂可以包括正性官能团。本发明的混合抗蚀剂允许更宽的曝光剂量窗口，从而提高产量或性能和线密度。

7. 发明授权

US06200726B1 Optimization of space width for hybrid photoresist 失效
标题翻译：混合光刻胶的空间宽度优化
公开(公告)号：US06200726B1
公开(公告)日：2001-03-13
申请号：US09170756
申请日：1998-10-13
申请人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Ahmad D. Katnani , Paul A. Rabidoux
发明人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Ahmad D. Katnani , Paul A. Rabidoux
IPC分类号： G03C173
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039 , G03F7/095 , H01L21/0274 , H01L21/3085 , H01L28/82 , Y10S430/106 , Y10S430/115 , Y10S430/128
摘要： A photo resist composition contains at least one photoacid generator (PAG), wherein at least two photoacids are produced upon exposure of the photo resist to actinic energy and wherein the photo resist is capable of producing a hybrid response. The function of providing generation of two photoacids in a hybrid resist is to optimize the use of hybrid resist by varying the hybrid space width. The at least two photoacids may differ in their effectiveness at catalyzing at least one mechanism of the hybrid response. In particular, one photoacid may be a weaker acid and another may be a stronger acid, wherein there exists a difference of at least four orders of magnitude between the acid dissociation constant (Ka) of the weaker acid and the stronger acid. A method for optimizing space width in a hybrid photo resist includes the steps of: 1) selecting a desired space width; 2) selecting at least one photoacid generator (PAG), wherein at least two photoacids will be produced upon exposure to actinic energy in relative proportions sufficient to produce the desired space width in the hybrid photo resist; and 3) forming a hybrid photo resist composition comprising the at least one PAG. The step of selecting at least one PAG may include first determining the space width produced alone by each photoacid in a group of candidate photoacids and then selecting the photoacids and corresponding at least one PAG that will produce the desired space width.
摘要翻译：光致抗蚀剂组合物含有至少一种光致酸发生剂（PAG），其中当光致抗蚀剂暴露于光化能时，产生至少两种光酸，并且其中光致抗蚀剂能产生杂化响应。在混合抗蚀剂中提供两种光酸的产生的功能是通过改变混合空间宽度来优化混合抗蚀剂的使用。至少两种光酸在催化至少一种混合反应机制方面的有效性可能不同。特别地，一种光致酸可以是较弱的酸，而另一种可能是较强的酸，其中在较弱酸的酸解离常数（Ka）和较强酸之间存在至少四个数量级的差异。一种用于优化混合光刻胶中的空间宽度的方法包括以下步骤：1）选择期望的空间宽度; 2）选择至少一种光致酸产生剂（PAG），其中当以相对比例暴露于足以产生混合光致抗蚀剂中所需空间宽度的光化能时，将产生至少两种光酸; 和3）形成包含所述至少一种PAG的混合光刻胶组合物。选择至少一个PAG的步骤可以包括首先确定由一组候选光酸中的每个光酸酸单独产生的空间宽度，然后选择将产生所需空间宽度的光酸和相应的至少一个PAG。

8. 发明授权

US5733705A Acid Scavengers for use in chemically amplified photoresists 失效
标题翻译：用于化学放大光致抗蚀剂的酸清除剂
公开(公告)号：US5733705A
公开(公告)日：1998-03-31
申请号：US730687
申请日：1996-10-11
申请人： Nageshwer Rao Bantu , William Ross Brunsvold , George Joseph Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khofasteh , Ratnam Sooriyakumaran , Dominic Changwon Yang
发明人： Nageshwer Rao Bantu , William Ross Brunsvold , George Joseph Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khofasteh , Ratnam Sooriyakumaran , Dominic Changwon Yang
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045
摘要： Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.
摘要翻译：质子海绵，小檗碱和十六烷基三甲基氢氧化铵碱化合物用作基于改性聚羟基苯乙烯（PHS）的化学放大光致抗蚀剂的添加剂。基础添加剂清除光致抗蚀剂中的游离酸，以保持改性PHS聚合物上的酸不稳定部分。碱添加剂非常适合于工业加工条件，不与光致抗蚀剂组合物中的光酸化合物反应以形成将阻碍光致抗蚀剂性能的副产物，并延长光致抗蚀剂组合物的保质期。此外，质子海绵和小檗碱碱添加剂具有与改性PHS聚合物不同的吸收光谱，因此可以容易地测定和控制光致抗蚀剂内基础添加剂的量。

9. 发明授权

US06340734B1 Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method 有权
标题翻译：倍半硅氧烷聚合物，合成方法，光致抗蚀剂组合物和多层平版印刷方法
公开(公告)号：US06340734B1
公开(公告)日：2002-01-22
申请号：US09454563
申请日：1999-12-07
申请人： Qinghuang Lin , Marie Angelopoulos , Ahmad D. Katnani , Ratnam Sooriyakumaran
发明人： Qinghuang Lin , Marie Angelopoulos , Ahmad D. Katnani , Ratnam Sooriyakumaran
IPC分类号： C08G7706
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/128
摘要： Novel silsesquioxane polymers are formed by methods which avoid the use of BBr3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.
摘要翻译：通过避免使用BBr3的方法形成新的倍半硅氧烷聚合物。新型倍半硅氧烷聚合物在负光致抗蚀剂组合物和光刻工艺中特别有用。或者，通过使用含有倍半硅氧烷聚合物和非倍半硅氧烷聚合物的共混物的聚合物组分，可获得改进的含倍半硅氧烷聚合物的负性光致抗蚀剂组合物。光致抗蚀剂组合物提供改进的溶解特性，使得能够使用0.26N TMAH显影剂。光致抗蚀剂组合物还提供改善的热特性，使得能够使用较高的加工温度。光致抗蚀剂组合物在多层光刻工艺中特别有用，并且能够产生高分辨率。

10. 发明授权

US06265134B1 Photoresist compositions with pendant polar-functionalized aromatic groups and acid-labile branching 失效
标题翻译：具有侧链极性官能化芳族基团和酸不稳定支化的光致抗蚀剂组合物
公开(公告)号：US06265134B1
公开(公告)日：2001-07-24
申请号：US09699764
申请日：2000-10-30
申请人： Pushkara R. Varanasi , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ranee W. Kwong
发明人： Pushkara R. Varanasi , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ranee W. Kwong
IPC分类号： G03C173
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/038 , Y10S430/106 , Y10S430/128
摘要： Acid-catalyzed positive photoresist compositions having generally improved performance (especially photoresist compositions having improved contrast (solubility differential), shrinkage and processing kinetics on radiation exposure) are obtained by use of polymers containing pendant polar-functionalized aromatic groups and acid-labile light crosslinking. The photoresist compositions also may contain a photosensitive acid-generating component as well as a solvent and possibly other auxiliary components. The polymers may contain other functional groups or components designed to impart alkaline-solubility, to provide alkaline-solubility protection in the absence of generated acid, etc. The photoresist compositions can be used to create patterned photoresist structures and further to make conductive, semiconductive or insulative structures by photolithography.
摘要翻译：通过使用含有极性官能化的芳族基团和酸不稳定的轻交联的聚合物，可获得具有通常改进性能的酸催化正性光致抗蚀剂组合物（特别是具有改善的对比度（溶解度差异），收缩和加工动力学的光致抗蚀剂组合物）。光致抗蚀剂组合物还可以含有感光酸产生组分以及溶剂以及可能的其它辅助组分。聚合物可以包含设计成赋予碱溶性的其它官能团或组分，以在不存在所产生的酸等的情况下提供碱溶性保护。光致抗蚀剂组合物可用于产生图案化的光致抗蚀剂结构，并进一步制成导电，半导体或绝缘结构通过光刻。

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