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1. 发明授权

US4921336A Array of bistable devices and apparatus and methods for creating same 失效
标题翻译：双稳态器件阵列及其制造方法
公开(公告)号：US4921336A
公开(公告)日：1990-05-01
申请号：US811261
申请日：1985-12-20
申请人： Mario Dagenais , Wayne F. Sharfin , Robert J. Seymour , Boris S. Elman
发明人： Mario Dagenais , Wayne F. Sharfin , Robert J. Seymour , Boris S. Elman
IPC分类号： G02F3/02
CPC分类号： G02F3/02
摘要： An array of bistable devices includes a thin cadmium sulfide platelet having a first portion thereof that is substantially pure and the remaining portion thereof is implanted with atoms that can bind excitons. Such remaining portion can be implanted with ions from a lithium source. Apparatus for providing such an array can include a source of lithium ions and masking means for selectively permitting and for selectively inhibiting passage of ions from the source to pass therethrough and to implant in a pattern onto the platelet. The apparatus operates at temperatures in the neighborhood of liquid helium. A method for producing such an array includes providing a thin, substantially pure, platelet of cadmium sulfide, selectively masking the platelet with a pattern to selectively permit and to selectively inhibit passage of ions onto the platelet, and providing a source of ions. The source of ions, in accordance with certain features, can be lithium ions.
摘要翻译：双稳态器件的阵列包括硫化镉薄片，其具有基本上纯的第一部分，其剩余部分注入可结合激子的原子。这样的剩余部分可以从锂源注入离子。用于提供这种阵列的装置可以包括锂离子源和掩蔽装置，用于选择性地允许和选择性地抑制来自源的离子通过，并且以图案植入血小板。该装置在液氦附近的温度下工作。制备这种阵列的方法包括提供薄的，基本上纯的硫化镉血小板，以选择性地掩蔽血小板以选择性地允许和选择性地抑制离子到血小板上的通过并提供离子源。根据某些特征，离子源可以是锂离子。

2. 发明授权

US5175740A Semiconductor laser and method of fabricating same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5175740A
公开(公告)日：1992-12-29
申请号：US734827
申请日：1991-07-24
申请人： Boris S. Elman , Wayne F. Sharfin
发明人： Boris S. Elman , Wayne F. Sharfin
IPC分类号： H01L33/00 , H01S5/20 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/209 , H01S5/32308
摘要： A ridge-waveguide laser is fabricated by epitaxially growing a GaAs-based heterostructure, disposing an AlAs etch stop layer on the heterostructure, disposing epitaxial layers on the etch stop layer, and etching the heterostructure to form the laser whereby the etch stop layer prevents further etching into said heterostructure.
摘要翻译：通过外延生长GaAs基异质结构，在异质结构上设置AlAs蚀刻停止层，在蚀刻停止层上设置外延层，以及蚀刻异质结构以形成激光，由此蚀刻停止层进一步防止，制造脊波导激光器蚀刻到所述异质结构中。

3. 发明授权

US4783136A Optical waveguides and methods for making same 失效
标题翻译：光波导及其制作方法
公开(公告)号：US4783136A
公开(公告)日：1988-11-08
申请号：US852864
申请日：1986-04-16
申请人： Boris S. Elman , Mrinal K. Thakur , Robert J. Seymour
发明人： Boris S. Elman , Mrinal K. Thakur , Robert J. Seymour
IPC分类号： G02B6/138 , B05D3/06 , G02B6/00 , G02B6/10
CPC分类号： G02B6/138
摘要： An optical waveguide made from a unitary organic film has a polydiacetylene core region and a diacetylene monomer cladding substrate region. The index of refraction of the polydiacetylene core region is greater than the index of refraction of the diacetylene monomer cladding substrate region.The method of fabricating the optical waveguide comprises depositing a diacetylene monomer film on a substrate. The diacetylene monomer film is polymerized by ion beam bombardment to a depth less than the thickness of the film. The depth of the polymerization is controlled by the ion mass and energy of the ion beam applied.
摘要翻译：由单一有机膜制成的光波导具有聚二乙炔核心区域和二乙炔单体包覆基板区域。聚二乙炔核心区域的折射率大于二乙炔单体包覆基板区域的折射率。制造光波导的方法包括在基片上沉积双乙炔单体膜。乙炔单体膜通过离子束轰击聚合至深度小于膜的厚度。聚合的深度由施加的离子束的离子质量和能量控制。

4. 发明申请

US20110119366A1 GRAPHICAL USER INTERFACE AND METHOD FOR CUSTOMER CENTRIC NETWORK MANAGEMENT 审中-公开
标题翻译：图形用户界面和客户中央网络管理方法
公开(公告)号：US20110119366A1
公开(公告)日：2011-05-19
申请号：US13012491
申请日：2011-01-24
申请人： Boris S. Elman , David G. Kenneson , Andrew Silletti
发明人： Boris S. Elman , David G. Kenneson , Andrew Silletti
IPC分类号： G06F15/173
CPC分类号： H04L41/22 , H04L41/0213 , H04L41/0893 , H04L41/18
摘要： A graphical user interface and method for customer centric network management. The graphical user interface includes a first view showing text input by a user indicative of customer identification data corresponding to a customer in a network. This data is received by a server connected to the user. The server retrieves stored information corresponding to the customer identification data from a database and provides the stored information and actual circuit path information corresponding to a customer service based on the stored information to the graphical user interface. A second view of the graphical user interface shows the stored information, and a third view shows a graphical representation of a customer path corresponding to the actual circuit path information.
摘要翻译：用于以客户为中心的网络管理的图形用户界面和方法。图形用户界面包括第一视图，其示出用户指示与网络中的客户相对应的客户标识数据的文本输入。该数据由连接到用户的服务器接收。服务器从数据库检索对应于客户识别数据的存储信息，并将存储的信息和与顾客服务对应的实际电路路径信息基于所存储的信息提供给图形用户界面。图形用户界面的第二视图显示所存储的信息，第三视图示出了与实际电路路径信息对应的客户路径的图形表示。

5. 发明授权

US5053843A Thermally-stable structure for IMSM photodetectors on GaAs substrates 失效
标题翻译： GaAs衬底上IMSM光电探测器的热稳定结构
公开(公告)号：US5053843A
公开(公告)日：1991-10-01
申请号：US626159
申请日：1990-12-12
申请人： A. N. M. Masum Choudhury , Chirravuri Jagannath , Boris S. Elman , Craig A. Armiento
发明人： A. N. M. Masum Choudhury , Chirravuri Jagannath , Boris S. Elman , Craig A. Armiento
IPC分类号： H01L31/0304 , H01L31/0352 , H01L31/108
CPC分类号： B82Y20/00 , H01L31/03046 , H01L31/035236 , H01L31/1085 , Y02E10/544
摘要： An IMSM photodetector structure comprises a GaAs substrate, a buffer region grown on the substrate, an optically active absorbing layer of In.sub.0.42 Ga.sub.0.58 As grown on the absorbing layer. The buffer region includes in sequence a first layer of In.sub.0.23 Ga.sub.0.77 As, an In.sub.0.46 Ga.sub.0.54 As/GaAs superlattice, and a second layer of In.sub.0.23 Ga.sub.0.77 As. An interdigitated pattern of Schottky metal contacts is fabricated on the Al.sub.0.3 Ga.sub.0.7 As/GaAs superlattice. This structure is useful in fabricating long-wavelength, monolithic receivers based on GaAs MESFET technology since the optical and electrical characteristics of the structure are preserved during the thermal annealing cycle necesary in ion-implaned GaAs MESFET processes.
摘要翻译： IMSM光电检测器结构包括GaAs衬底，在衬底上生长的缓冲区，在吸收层上生长的In 0.42 Ga 0.58 As的光学活性吸收层。缓冲区依次包括In0.23Ga0.77As的第一层，In0.46Ga0.54As / GaAs超晶格和第二层In0.23Ga0.77As。在Al0.3Ga0.7As / GaAs超晶格上制造了肖特基金属触点的交叉图案。该结构在制造基于GaAs MESFET技术的长波长单片接收机中是有用的，因为在离子掺杂的GaAs MESFET工艺中，在热退火循环期间，保留了结构的光学和电学特性。

6. 发明授权

US07143152B1 Graphical user interface and method for customer centric network management 有权
标题翻译：用于以客户为中心的网络管理的图形用户界面和方法
公开(公告)号：US07143152B1
公开(公告)日：2006-11-28
申请号：US09539972
申请日：2000-03-31
申请人： Boris S. Elman , David G. Kenneson , Andrew Silletti
发明人： Boris S. Elman , David G. Kenneson , Andrew Silletti
IPC分类号： G06F15/16 , G06F15/173
CPC分类号： H04L41/22 , H04L41/0213 , H04L41/0893 , H04L41/18
摘要： A graphical user interface and method for customer centric network management. The graphical user interface includes a first view showing text input by a user indicative of customer identification data corresponding to a customer in a network. This data is received by a server connected to the user. The server retrieves stored information corresponding to the customer identification data from a database and provides the stored information and actual circuit path information corresponding to a customer service based on the stored information to the graphical user interface. A second view of the graphical user interface shows the stored information, and a third view shows a graphical representation of a customer path corresponding to the actual circuit path information.
摘要翻译：用于以客户为中心的网络管理的图形用户界面和方法。图形用户界面包括第一视图，其示出用户指示与网络中的客户相对应的客户标识数据的文本输入。该数据由连接到用户的服务器接收。服务器从数据库检索对应于客户识别数据的存储信息，并将存储的信息和与顾客服务对应的实际电路路径信息基于所存储的信息提供给图形用户界面。图形用户界面的第二视图显示所存储的信息，第三视图示出了与实际电路路径信息对应的客户路径的图形表示。

7. 发明授权

US5021360A Method of farbicating highly lattice mismatched quantum well structures 失效
标题翻译：高度晶格失配量子阱结构的疏水方法
公开(公告)号：US5021360A
公开(公告)日：1991-06-04
申请号：US412354
申请日：1989-09-25
申请人： Paul Melman , Boris S. Elman , Emil S. Koteles , Chirravuri Jagannath
发明人： Paul Melman , Boris S. Elman , Emil S. Koteles , Chirravuri Jagannath
IPC分类号： H01L29/06 , H01L21/20 , H01L21/203 , H01L29/205 , H01S5/34
CPC分类号： B82Y20/00 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01S5/34 , H01S5/3403 , H01S5/3406 , Y10S148/06 , Y10S148/097 , Y10S148/16 , Y10S438/936 , Y10S438/938
摘要： A method of fabricating a semiconductor heterostructure includes the growth of a quantum well active region that is highly lattice-mismatched relative to a substrate. A buffer layer having a thickness above a critical value is grown on the substrate whereby the stress due to a lattice constant mismatch between the buffer layer and substrate is relieved through the formation of misfit dislocations. A strained superlattice structure is grown on the buffer layer in order to terminate any upwardly-propagating dislocations. An unstrained barrier layer is subsequently grown on the superlattice structure. The fabrication method concludes with the growth of a quantum well structure on the unstrained layer wherein a lattice constant mismatch between the quantum well structure and the unstrained barrier layer is smaller than the lattice constant mismatch between the quantum well structure and the substrate. As a result, only a fraction of the stress due to the large lattice mismatch between the quantum well structure and the substrate is accommodated by coherent strain in the quantum well structure, while the remainder of the stress is relieved through the formation of misfit dislocations spatially separated from the quantum well structure.

8. 发明授权

US4808285A Method of making micro-optical components on polydiacetylene optical devices 失效
标题翻译：在聚二乙炔光学器件上制造微光学元件的方法
公开(公告)号：US4808285A
公开(公告)日：1989-02-28
申请号：US852873
申请日：1986-04-16
申请人： Yung-Jui Chen , Boris S. Elman , Gary M. Carter
发明人： Yung-Jui Chen , Boris S. Elman , Gary M. Carter
IPC分类号： B01J19/08 , G02B6/125 , G02B6/28
CPC分类号： B01J19/081 , G02B6/125 , G02B6/2804
摘要： A method of making Y couplers and grating optical waveguides of the present invention comprises exposing the polydiacetylene to an e-beam or a similar exposing means causing a change in the index of refraction of the polydiacetylene. In the case of e-beam exposure, the optical component patent is produced by directly controlling the e-beam which does not require any physical and/or chemical preparation of the polydiacetylene. The depth of penetration of the e-beam is controlled by the scanning rate and intensity of the e-beam. The optical gratings, fabricated by e-beam exposure technique, also inherit nonlinear optical properties which can be utilized in nonlinear optical applications.
摘要翻译：制造本发明的Y耦合器和光栅光波导的方法包括将聚二乙炔暴露于电子束或类似的引起聚二乙炔折射率变化的曝光装置。在电子束曝光的情况下，通过直接控制不需要物理和/或化学制备聚二乙炔的电子束来生产光学部件专利。电子束的穿透深度由电子束的扫描速度和强度来控制。通过电子束曝光技术制造的光栅也承载了可用于非线性光学应用的非线性光学性质。

9. 发明授权

US4699952A Chemical modification of solid, fully crystalline polydiacetylenes 失效
标题翻译：固体，全结晶聚二乙炔的化学改性
公开(公告)号：US4699952A
公开(公告)日：1987-10-13
申请号：US2526
申请日：1987-01-12
申请人： Daniel J. Sandman , Boris S. Elman , Christopher S. Velazquez
发明人： Daniel J. Sandman , Boris S. Elman , Christopher S. Velazquez
IPC分类号： C08F8/22 , C08F8/30
CPC分类号： C08F8/22
摘要： Chemical modification of crystalline poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne is disclosed. There is provided a chlorinated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne having at least 12 chlorine atoms per repeat unit. The chlorinated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne of the invention is characterized by a Fourier transform infrared (FTIR) spectrum including peaks at about 745.+-.5, 798.+-.5, and 851.+-.5 cm.sup.-1. There is also provided a nitrated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne having at least 2 nitro groups per repeat unit. The nitrated poly-1,6-di-(N-carbazolyl)-2,4-hexadiyne of the invention is characterized by an FTIR spectrum including absorption at about 1511.+-.5, 1342.+-.5, 794.+-.5, 751.+-.5, and 718.+-.5 cm.sup.-1.
摘要翻译：公开了结晶聚-1,6-二 - （N-咔唑基）-2,4-己二炔的化学修饰。提供了每个重复单元具有至少12个氯原子的氯化聚-1,6-二（N-咔唑基）-2,4-己二炔。本发明的氯化聚-1,6-二 - （ - 咔唑基）-2,4-己二炔的特征在于傅立叶变换红外（FTIR）光谱，包括在约745 +/- 5,798 +/- 5 ，和851 +/- 5cm-1。还提供了每个重复单元具有至少2个硝基的硝化聚-1,6-二（N-咔唑基）-2,4-己二炔。本发明的硝化聚-1,6-二（N-咔唑基）-2,4-己二炔的特征在于FTIR光谱，其包括在约1511 +/- 5,1342 +/- 5,794 +/- 5,751 +/- 5和718 +/- 5cm-1。

10. 发明授权

US07260195B1 Call management service 有权
标题翻译：呼叫管理服务
公开(公告)号：US07260195B1
公开(公告)日：2007-08-21
申请号：US10007958
申请日：2001-11-13
申请人： Boris S. Elman , Jesse Hefter
发明人： Boris S. Elman , Jesse Hefter
IPC分类号： H04M15/00
CPC分类号： H04M15/00
摘要： A system and method that enables a telecommunications consumer to define groups to be included in a monthly bill, and then periodically generate a bill in accordance with the consumer's specifications. In one embodiment, the invention includes a plurality of portable wireless telephone stations; a plurality of wired telephone stations; a plurality of local exchange carriers (LECs); at least one mobile switching center (MSC) and at least one mobile base antenna tower. Each MSC, LEC and IXC is adapted to operate a program that allows a telecommunications consumer to define groups to be included in a monthly bill, and then periodically generate a bill in accordance with the consumer's specifications.
摘要翻译：一种使电信消费者能够定义要包括在每月帐单中的组，然后根据消费者的规格周期性地生成账单的系统和方法。在一个实施例中，本发明包括多个便携式无线电话台; 多个有线电话站; 多个本地交换运营商（LEC）; 至少一个移动交换中心（MSC）和至少一个移动基站天线塔。每个MSC，LEC和IXC适于操作允许电信消费者定义要包括在每月帐单中的组，然后根据消费者的规格周期性地生成账单的程序。

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