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1. 发明授权

US5021360A Method of farbicating highly lattice mismatched quantum well structures 失效
标题翻译：高度晶格失配量子阱结构的疏水方法
公开(公告)号：US5021360A
公开(公告)日：1991-06-04
申请号：US412354
申请日：1989-09-25
申请人： Paul Melman , Boris S. Elman , Emil S. Koteles , Chirravuri Jagannath
发明人： Paul Melman , Boris S. Elman , Emil S. Koteles , Chirravuri Jagannath
IPC分类号： H01L29/06 , H01L21/20 , H01L21/203 , H01L29/205 , H01S5/34
CPC分类号： B82Y20/00 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01S5/34 , H01S5/3403 , H01S5/3406 , Y10S148/06 , Y10S148/097 , Y10S148/16 , Y10S438/936 , Y10S438/938
摘要： A method of fabricating a semiconductor heterostructure includes the growth of a quantum well active region that is highly lattice-mismatched relative to a substrate. A buffer layer having a thickness above a critical value is grown on the substrate whereby the stress due to a lattice constant mismatch between the buffer layer and substrate is relieved through the formation of misfit dislocations. A strained superlattice structure is grown on the buffer layer in order to terminate any upwardly-propagating dislocations. An unstrained barrier layer is subsequently grown on the superlattice structure. The fabrication method concludes with the growth of a quantum well structure on the unstrained layer wherein a lattice constant mismatch between the quantum well structure and the unstrained barrier layer is smaller than the lattice constant mismatch between the quantum well structure and the substrate. As a result, only a fraction of the stress due to the large lattice mismatch between the quantum well structure and the substrate is accommodated by coherent strain in the quantum well structure, while the remainder of the stress is relieved through the formation of misfit dislocations spatially separated from the quantum well structure.

2. 发明授权

US5300794A Method of fabricating highly lattice mismatched quantum well structures 失效
标题翻译：制造高格子失配量子阱结构的方法
公开(公告)号：US5300794A
公开(公告)日：1994-04-05
申请号：US671311
申请日：1991-03-19
申请人： Paul Melman , Boris S. Elman , Emil S. Koteles , Chirravuri Jagannath
发明人： Paul Melman , Boris S. Elman , Emil S. Koteles , Chirravuri Jagannath
IPC分类号： H01L29/06 , H01L21/20 , H01L21/203 , H01L29/205 , H01S5/34 , H01L29/161 , H01L29/225
CPC分类号： B82Y20/00 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01S5/34 , H01S5/3403 , H01S5/3406 , Y10S148/06 , Y10S148/097 , Y10S148/16 , Y10S438/936 , Y10S438/938
摘要： A method of fabricating a semiconductor heterostructure includes the growth of a quantum well active region that is highly lattice-mismatched relative to a substrate. A buffer layer having a thickness above a critical value is grown on the substrate whereby the stress due to a lattice constant mismatch between the buffer layer and substrate is relieved through the formation of misfit dislocations. A strained superlattice structure is grown on the buffer layer in order to terminate any upwardly-propagating dislocations. An unstrained barrier layer is subsequently grown on the superlattice structure. The fabrication method concludes with the growth of a quantum well structure on the unstrained layer wherein a lattice constant mismatch between the quantum well structure and the unstrained barrier layer is smaller than the lattice constant mismatch between the quantum well structure and the substrate. As a result, only a fraction of the stress due to the large lattice mismatch between the quantum well structure and the substrate is accommodated by coherent strain in the quantum well structure, while the remainder of the stress is relieved through the formation of misfit dislocations spatially separated from the quantum well structure.
摘要翻译：制造半导体异质结构的方法包括相对于衬底高度晶格失配的量子阱有源区的生长。在衬底上生长具有高于临界值的厚度的缓冲层，由此缓冲层和衬底之间的晶格常数不匹配引起的应力通过形成失配位错而减轻。在缓冲层上生长应变超晶格结构以终止任何向上传播的位错。随后，在超晶格结构上生长非限制性阻挡层。制造方法的结论是量子阱结构在非限制层上的生长，其中量子阱结构和非限制性势垒层之间的晶格常数不匹配小于量子阱结构和衬底之间的晶格常数不匹配。结果，量子阱结构和衬底之间的大的晶格失配导致的应力只有一小部分是通过量子阱结构中的相干应变来适应的，而剩余的应力通过在空间上形成失配位错来缓解与量子阱结构分离。

3. 发明授权

US5238868A Bandgap tuning of semiconductor quantum well structures 失效
标题翻译：半导体量子阱结构的带隙调谐
公开(公告)号：US5238868A
公开(公告)日：1993-08-24
申请号：US724437
申请日：1991-07-01
申请人： Boris S. Elman , Emil S. Koteles , Paul Melman , Craig A. Armiento
发明人： Boris S. Elman , Emil S. Koteles , Paul Melman , Craig A. Armiento
IPC分类号： H01L21/18 , H01L21/324 , H01S5/20 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01L21/182 , H01L21/3245 , H01S5/34 , H01S5/2063 , H01S5/3413 , H01S5/3432
摘要： A method of selectively tuning the bandedge of a semi-conductor heterostructure includes forming a disordered region which is spatially separated from a quantum well active region, and subsequently annealing the heterostructure so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier heterojunctions. The tuning is spatially selective when the heterostructure is masked so that exposed portions correspond to regions where bandgap tuning is desirable. The heterostructures of interest are III-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.
摘要翻译：选择性地调谐半导体异质结构的带边的方法包括形成与量子阱有源区空间分离的无序区域，随后使异质结构退火，使得无序区域中的空位/缺陷扩散到量子阱区域，增强了屏障异质结的相互扩散。当异质结构被掩蔽时，调谐是空间选择的，使得暴露部分对应于期望带隙调谐的区域。感兴趣的异质结构是III-V材料体系，例如AlGaAs / GaAs，其中活性区域包括诸如单量子阱，多量子阱或超晶格的结构。

4. 发明授权

US5243671A Laser-to-fiber coupling apparatus 失效
标题翻译：激光 - 光纤耦合装置
公开(公告)号：US5243671A
公开(公告)日：1993-09-07
申请号：US815480
申请日：1991-12-31
申请人： Emil S. Koteles , Paul Melman , Barbara Foley
发明人： Emil S. Koteles , Paul Melman , Barbara Foley
IPC分类号： G02B6/42
CPC分类号： G02B6/4202 , G02B6/4203 , G02B6/4214
摘要： An apparatus for coupling light from a laser chip into an unetched and uncoated optical fiber includes a substrate carrier having a V-groove extending axially through the substrate carrier. The fiber has a beveled end with an inner and outer face and is positionable in the plane of the laser chip within the V-groove such that light emitted by the laser chip strikes the inner face of the beveled end and is totally internally reflected into the fiber core.
摘要翻译：用于将来自激光芯片的光耦合到未蚀刻和未涂覆的光纤的装置包括具有轴向延伸穿过衬底载体的V形槽的衬底载体。光纤具有内表面和外表面的倾斜端，并且可在激光芯片的平面内定位在V形槽内，使得由激光芯片发出的光照射到倾斜端的内表面，并且完全内部反射到纤维芯。

5. 发明授权

US06904205B2 Resolution enhanced optical spectrometer having a fixed number of photodetector elements 失效
标题翻译：具有固定数目的光检测器元件的分辨率增强型光谱仪
公开(公告)号：US06904205B2
公开(公告)日：2005-06-07
申请号：US10861465
申请日：2004-06-07
申请人： Orazio Berolo , Jian-Jun He , Emil S. Koteles , Bryant Hichwa , John Wade
发明人： Orazio Berolo , Jian-Jun He , Emil S. Koteles , Bryant Hichwa , John Wade
IPC分类号： G01J3/02 , G01J3/18 , G02B6/12 , G02B6/34
CPC分类号： G02B6/4215 , G01J3/0256 , G01J3/0259 , G01J3/0294 , G01J3/18 , G02B6/12007
摘要： A waveguide optical monitor is disclosed. The device has an optical input port coupled through a switch to a plurality of input waveguides. A dispersive element disperses light within the input optical waveguides toward a plurality of output waveguides. There are a plurality of photodetectors each optically coupled to an output waveguide. The photodectors are for sensing an intensity of light within the waveguide with which it is optically coupled. An optical switch in optical communication with the optical input port and for switching light received at the optical input port to one of the plurality of input waveguides. Also, an angular dispersive element is present for receiving light from any one of the waveguides and for dispersing the light toward a plurality of output waveguides in dependence upon the input waveguide position and a wavelength of the light such that light directed from the first of the plurality of input waveguides toward the plurality of output waveguides has a first centre wavelength within each of the output waveguides and light directed from the second of the plurality of input waveguides toward the plurality of output waveguides has a second different centre wavelength within each of the output waveguides, the second different center wavelength different form any first center wavelength.
摘要翻译：公开了一种波导光学监视器。该装置具有通过开关耦合到多个输入波导的光输入端口。分散元件将光输送到输入光波导内朝向多个输出波导。存在多个光电检测器，每个光电检测器光耦合到输出波导。光电探测器用于感测与光学耦合的波导内的光强度。光开关，其与所述光输入端口光通信并将在所述光输入端口处接收的光切换到所述多个输入波导中的一个。此外，存在用于从任何一个波导接收光的角度色散元件，并且用于根据输入波导位置和光的波长将光分散到多个输出波导，使得从第一个朝向多个输出波导的多个输入波导具有在每个输出波导内的第一中心波长，并且从多个输入波导中的第二个朝着多个输出波导引导的光在每个输出波导内具有第二不同的中心波长波导，第二不同的中心波长不同形成任何第一中心波长。

6. 发明授权

US5757023A Fabrication of quantum well polarization independent active devices 失效
标题翻译：量子阱极化独立有源器件的制造
公开(公告)号：US5757023A
公开(公告)日：1998-05-26
申请号：US787958
申请日：1997-01-23
申请人： Emil S. Koteles , Jian Jun He , Sylvain Charbonneau , Philip J. Poole
发明人： Emil S. Koteles , Jian Jun He , Sylvain Charbonneau , Philip J. Poole
IPC分类号： G02F1/017 , H01S5/34 , H01S5/50 , H01L29/06
CPC分类号： B82Y20/00 , G02F1/017 , H01S5/5009 , G02F2001/01766 , G02F2203/06 , H01S5/3404 , H01S5/3413 , H01S5/3414
摘要： An active semiconductor device that performs in a substantially polarization independent manner. A quantum well waveguide is intermixed by intermixing atoms across an interface between well and barrier layers. The atoms include at least 2 groups wherein intermixing of one group is at a substantially greater rate than another group. Cations are interdiffused at a greater rate than said anions across interfaces between well and barrier layers. The intermixing must be sufficient to provide strain within layers of the waveguide and sufficient to at least partially degenerate light hole and heavy hole bands of the structure. Preferably intermixing is sufficient to completely degenerate light hole and heavy hold bands to essentially produce a device that is completely polarization independent.
摘要翻译：一种以基本上极化独立的方式执行的有源半导体器件。量子阱波导通过在阱和阻挡层之间的界面上混合原子而混合。这些原子包括至少2个基团，其中一个基团的混合速率比另一个基本上更大的速率。阳离子在井和阻隔层之间的界面上以比所述阴离子更大的速率相互扩散。混合必须足以在波导的层内提供应变，并且足以使结构的光孔和重孔带至少部分地退化。优选地，混合足以使光孔和重保持带完全退化以基本上产生完全极化独立的装置。

7. 发明授权

US06753958B2 Resolution enhanced optical spectrometer having a fixed number of photodetector elements 失效
标题翻译：具有固定数目的光检测器元件的分辨率增强型光谱仪
公开(公告)号：US06753958B2
公开(公告)日：2004-06-22
申请号：US10102833
申请日：2002-03-22
申请人： Orazio Berolo , Jian-Jun He , Emil S. Koteles , Bryant Hichwa , John Wade
发明人： Orazio Berolo , Jian-Jun He , Emil S. Koteles , Bryant Hichwa , John Wade
IPC分类号： G01J328
CPC分类号： G02B6/4215 , G01J3/0256 , G01J3/0259 , G01J3/0294 , G01J3/18 , G02B6/12007
摘要： A waveguide optical monitor is disclosed. The device has an optical input port coupled through a switch to a plurality of input waveguides. A dispersive element disperses light within the input optical waveguides toward a plurality of output waveguides. There are a plurality of photodetectors each optically coupled to an output waveguide. The photodectors are for sensing an intensity of light within the waveguide with which it is optically coupled. An optical switch in optical communication with the optical input port and for switching light received at the optical input port to one of the plurality of input waveguides. Also, an angular dispersive element is present for receiving light from any one of the waveguides and for dispersing the light toward a plurality of output waveguides in dependence upon the input waveguide position and a wavelength of the light such that light directed from the first of the plurality of input waveguides toward the plurality of output waveguides has a first centre wavelength within each of the output waveguides and light directed from the second of the plurality of input waveguides toward the plurality of output waveguides has a second different centre wavelength within each of the output waveguides, the second different centre wavelength different form any first centre wavelength.
摘要翻译：公开了一种波导光学监视器。该装置具有通过开关耦合到多个输入波导的光输入端口。分散元件将光输送到输入光波导内朝向多个输出波导。存在多个光电检测器，每个光电检测器光耦合到输出波导。光电探测器用于感测与光学耦合的波导内的光强度。光开关，其与所述光输入端口光通信并将在所述光输入端口处接收的光切换到所述多个输入波导中的一个。此外，存在用于从任何一个波导接收光的角度色散元件，并且用于根据输入波导位置和光的波长将光分散到多个输出波导，使得从第一个朝向多个输出波导的多个输入波导具有在每个输出波导内的第一中心波长，并且从多个输入波导中的第二个朝着多个输出波导引导的光在每个输出波导内具有第二不同的中心波长波导，第二不同的中心波长不同形成任何第一中心波长。

8. 发明授权

US6027989A Bandgap tuning of semiconductor well structure 失效
标题翻译：半导体阱结构的带隙调谐
公开(公告)号：US6027989A
公开(公告)日：2000-02-22
申请号：US894725
申请日：1997-10-28
申请人： Philip J. Poole , Sylvain Charbonneau , Geofrey C. Aers , Michael Davies , Emil S. Koteles
发明人： Philip J. Poole , Sylvain Charbonneau , Geofrey C. Aers , Michael Davies , Emil S. Koteles
IPC分类号： H01L21/18 , H01L21/266 , H01L33/06 , H01S5/026 , H01S5/16 , H01S5/20 , H01S5/34 , H01S5/40 , H01L21/22
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/182 , H01L21/266 , H01S5/34 , H01S5/0265 , H01S5/162 , H01S5/2063 , H01S5/2068 , H01S5/3413 , H01S5/4031 , H01S5/4087
摘要： In a method of bandgap tuning of a quantum well heterostructure wherein ions are implanted in the heterostructure by ion implantation, the ions are implanted so that different regions are implanted in such a way as to create different concentrations of defects. This provides varying bandgap energies to various areas of the heterostructure during a subsequent thermal treatment, which removes residual defects and initiates intermixing in the quantum well region to result in a structure having a selectively shifted bandgap.
摘要翻译： PCT No.PCT / CA96 / 00121 Sec。 371日期1997年10月28日第 102（e）日期1997年10月28日PCT提交1996年2月28日PCT公布。出版物WO96 / 27226 日期1996年9月6日在通过离子注入将离子注入到异质结构中的量子阱异质结构的带隙调谐方法中，注入离子，使得不同的区域被注入以产生不同浓度的缺陷。这在随后的热处理期间为异质结构的各个区域提供不同的带隙能量，这消除了残余缺陷并且引发量子阱区域中的混合，从而导致具有选择性移位带隙的结构。

9. 发明授权

US5395793A Method of bandgap tuning of semiconductor quantum well structures 失效
标题翻译：半导体量子阱结构的带隙调谐方法
公开(公告)号：US5395793A
公开(公告)日：1995-03-07
申请号：US172094
申请日：1993-12-23
申请人： Sylvain Charbonneau , Emil S. Koteles
发明人： Sylvain Charbonneau , Emil S. Koteles
IPC分类号： G02B6/12 , G02B6/134 , H01L21/18 , H01L21/20 , H01S5/34
CPC分类号： B82Y20/00 , G02B6/1347 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02694 , H01L21/182 , G02B2006/12169 , H01S5/3413 , H01S5/3414
摘要： A method of selectively tuning the bandedge of a semiconductor heterostructure includes repeatedly forming a disordered region that is spatially separated from a quantum well active region and subsequently annealing the heterostructure each time after the disordered region is formed, so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier heterojunctions. Repeating, the disordering followed by annealing allows for a greater range in bandgap tuning. The heterostuctures of interest are IH-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.
摘要翻译：选择性地调谐半导体异质结构的带边的方法包括重复形成空间上与量子阱有源区域分离的无序区域，随后在形成无序区域之后每次退火异质结构，使得无序区域中的空位/缺陷扩散到量子阱区域，并增强了阱屏障异质结的相互扩散。重复，随后退火的混乱使得带隙调谐范围更大。感兴趣的异质结构是诸如AlGaAs / GaAs的IH-V材料体系，其中活性区域包括诸如单量子阱，多量子阱或超晶格的结构。

10. 发明授权

US07019893B2 Optical dynamic gain amplifier 失效
公开(公告)号：US07019893B2
公开(公告)日：2006-03-28
申请号：US10073083
申请日：2002-02-12
申请人： Emil S. Koteles , Michael Davies , Jian-Jun He
发明人： Emil S. Koteles , Michael Davies , Jian-Jun He
IPC分类号： H04B10/12
CPC分类号： H04B10/2941 , H01S5/4025 , H01S5/4087 , H01S5/50 , H01S2301/04 , H04B10/2914 , H04B2210/258
摘要： A dynamic gain equalizer using amplification instead of attenuation is disclosed. The device relies on integrated semiconductor optical amplifiers in line with a demultiplexer on a single integrated substrate for performing equalization of signals within each of a plurality of channels.

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