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    • 1. 发明申请
    • Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication
    • 用于减轻浅沟槽隔离制造的蚀刻停止限幅的方法和系统
    • US20050282351A1
    • 2005-12-22
    • US10874038
    • 2004-06-22
    • Manuel Quevedo-LopezJames ChambersLeif Olsen
    • Manuel Quevedo-LopezJames ChambersLeif Olsen
    • H01L21/76H01L21/762H01L21/8238
    • H01L29/7842H01L21/76224H01L21/823807H01L21/823878
    • The present invention facilitates semiconductor fabrication by maintaining shape and density of an etch stop layer (206) during trench fill operations. The shape and density of the etch stop layer (206) is maintained by forming a protective alloy liner layer (310) on the etch stop layer (206) prior to trench fill operations. The protective alloy liner (310) is comprised of an alloy that is resistant to materials employed in the trench fill operations. As a result, clipping and/or damage to the etch stop layer (206) is mitigated thereby facilitating a subsequent planarization process that employs the etch stop layer (206). Additionally, selection of thickness and composition (1706) of the formed protective alloy (310) yields a stress amount and type (1704) that is applied to channel regions of unformed transistor devices, ultimately providing for an improvement in channel mobility.
    • 本发明通过在沟槽填充操作期间保持蚀刻停止层(206)的形状和密度来促进半导体制造。 通过在沟槽填充操作之前在蚀刻停止层(206)上形成保护合金衬垫层(310)来保持蚀刻停止层(206)的形状和密度。 保护合金衬套(310)由对沟槽填充操作中使用的材料具有耐受性的合金构成。 结果,减轻了对蚀刻停止层(206)的削波和/或损伤,从而有利于采用蚀刻停止层(206)的随后的平坦化工艺。 此外,形成的保护合金(310)的厚度和组成(1706)的选择产生施加到未成形晶体管器件的沟道区域的应力量和类型(1704),最终提供了沟道迁移率的改善。
    • 2. 发明申请
    • Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication
    • 用于减轻浅沟槽隔离制造的蚀刻停止限幅的方法和系统
    • US20070134886A1
    • 2007-06-14
    • US11678107
    • 2007-02-23
    • Manuel Quevedo-LopezJames ChambersLeif Olsen
    • Manuel Quevedo-LopezJames ChambersLeif Olsen
    • H01L21/76
    • H01L29/7842H01L21/76224H01L21/823807H01L21/823878
    • The present invention facilitates semiconductor fabrication by maintaining shape and density of an etch stop layer (206) during trench fill operations. The shape and density of the etch stop layer (206) is maintained by forming a protective alloy liner layer (310) on the etch stop layer (206) prior to trench fill operations. The protective alloy liner (310) is comprised of an alloy that is resistant to materials employed in the trench fill operations. As a result, clipping and/or damage to the etch stop layer (206) is mitigated thereby facilitating a subsequent planarization process that employs the etch stop layer (206). Additionally, selection of thickness and composition (1706) of the formed protective alloy (310) yields a stress amount and type (1704) that is applied to channel regions of unformed transistor devices, ultimately providing for an improvement in channel mobility.
    • 本发明通过在沟槽填充操作期间保持蚀刻停止层(206)的形状和密度来促进半导体制造。 通过在沟槽填充操作之前在蚀刻停止层(206)上形成保护合金衬垫层(310)来保持蚀刻停止层(206)的形状和密度。 保护合金衬套(310)由对沟槽填充操作中使用的材料具有耐受性的合金构成。 结果,减轻了对蚀刻停止层(206)的削波和/或损伤,从而有利于采用蚀刻停止层(206)的随后的平坦化工艺。 此外,形成的保护合金(310)的厚度和组成(1706)的选择产生施加到未成形晶体管器件的沟道区域的应力量和类型(1704),最终提供了沟道迁移率的改善。
    • 5. 发明申请
    • Apparatus and Method for Data Transmission from a Rotating Control Device
    • 用于从旋转控制装置进行数据传输的装置和方法
    • US20100008190A1
    • 2010-01-14
    • US12500566
    • 2009-07-09
    • Kevin L. GrayThomas F. BaileyJames Chambers
    • Kevin L. GrayThomas F. BaileyJames Chambers
    • E21B47/18
    • E21B33/085E21B3/02E21B7/12E21B17/01E21B21/08E21B33/064E21B47/00E21B47/06E21B47/065E21B47/12E21B47/122G01V11/002
    • The present invention generally relates to an apparatus and a method of transmitting data from a rotating control device. In one aspect, a method of transmitting data from a rotating control device coupled to an offshore drilling unit is provided. The method includes the step of generating data relating to a parameter associated with the rotating control device. The method further includes the step of transmitting the data from a transmitting assembly coupled to the rotating control device to a receiving assembly positioned proximate the transmitting assembly. Additionally, the method includes the step of transmitting the data from the receiving assembly to the offshore drilling unit. In another aspect, a data gathering and transmitting system for use with a rotating control device coupled to an offshore drilling unit is provided. In a further aspect, a method for transmitting data generated in a rotating control device coupled to a riser is provided.
    • 本发明一般涉及从旋转控制装置发送数据的装置和方法。 一方面,提供一种从耦合到海上钻井单元的旋转控制装置传送数据的方法。 该方法包括生成与旋转控制装置相关的参数有关的数据的步骤。 该方法还包括将数据从耦合到旋转控制装置的发送组件传送到靠近发射组件定位的接收组件的步骤。 此外,该方法包括将数据从接收组件传送到海上钻井单元的步骤。 在另一方面,提供了一种与耦合到海上钻井单元的旋转控制装置一起使用的数据收集和传送系统。 在另一方面,提供一种用于传送在连接到提升管的旋转控制装置中产生的数据的方法。
    • 9. 发明申请
    • Dual work function metal gate integration in semiconductor devices
    • 双功能金属门集成在半导体器件中
    • US20050258468A1
    • 2005-11-24
    • US10890365
    • 2004-07-13
    • Luigi ColomboJames ChambersMark Visokay
    • Luigi ColomboJames ChambersMark Visokay
    • H01L21/3205H01L21/8234H01L21/8238H01L29/49H01L29/76H01L29/78
    • H01L21/823842H01L29/4958
    • The present invention provides, in one embodiment, a process for forming a dual work function metal gate semiconductor device (100). The process includes providing a semiconductor substrate (105) having a gate dielectric layer (110) thereon and a metal layer (205) on the gate dielectric layer. A work function of the metal layer is matched to a conduction band or a valence band of the semiconductor substrate. The process also includes forming a conductive barrier layer (210) on a portion (215) of the metal layer and a material layer (305) on the metal layer. The metal layer and the material layer are annealed to form a metal alloy layer (405) to thereby match a work function of the metal alloy layer to another of the conduction band or the valence band of the substrate. Other embodiments of the invention include a dual work function metal gate semiconductor device (900) and an integrated circuit (1000).
    • 本发明在一个实施例中提供了一种用于形成双功函数金属栅极半导体器件(100)的工艺。 该方法包括提供其上具有栅极电介质层(110)的半导体衬底(105)和栅极电介质层上的金属层(205)。 金属层的功函数与半导体衬底的导带或价带相匹配。 该方法还包括在金属层的一部分(215)和金属层上的材料层(305)上形成导电阻挡层(210)。 对金属层和材料层进行退火以形成金属合金层(405),从而将金属合金层的功函数与衬底的导带或价带中的另一个相匹配。 本发明的其它实施例包括双功函数金属栅极半导体器件(900)和集成电路(1000)。