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1. 发明授权

US4532888A Electron-beam coating of very broad strips 失效
标题翻译：非常宽的条带的电子束涂层
公开(公告)号：US4532888A
公开(公告)日：1985-08-06
申请号：US518473
申请日：1983-07-29
申请人： Manfred Neumann , Henry Morgner , Harry Forster , Gunter Jasch , Wilfried Kunack , Martin Godenschweg , Peter Unganz
发明人： Manfred Neumann , Henry Morgner , Harry Forster , Gunter Jasch , Wilfried Kunack , Martin Godenschweg , Peter Unganz
IPC分类号： C23C14/30 , H01J37/305 , C23C13/12
CPC分类号： H01J37/3053 , C23C14/30
摘要： Electron-beam (EB) coating of broad strips with improved film quality, and without undue scattering and deflection of the electron beam at long beam paths is accomplished with a shielding mantle, placed between the EB gun and the evaporation crucible, providing vacuum-tight shielding of the beam path from the coating chamber.
摘要翻译：电子束（EB）涂层具有改善的膜质量，并且在长波束路径下电子束没有不适当的散射和偏转的情况下，用放置在EB喷枪和蒸发坩埚之间的屏蔽罩实现真空密封光束路径与涂层室的屏蔽。

2. 发明授权

US4524717A Electron beam strip-coating apparatus 失效
标题翻译：电子束剥离装置
公开(公告)号：US4524717A
公开(公告)日：1985-06-25
申请号：US485650
申请日：1983-04-18
申请人： Manfred Neumann , Siegfried Schiller , Gerhard ZeiBig , Henry Morgner , Gunter Jasch
发明人： Manfred Neumann , Siegfried Schiller , Gerhard ZeiBig , Henry Morgner , Gunter Jasch
IPC分类号： C23C14/30 , H01J37/305 , C23C13/10
CPC分类号： C23C14/30 , H01J37/3053
摘要： The present invention is a coating apparatus for temperature-sensitive broad strips or similar substrates. To obtain a high quality of coating, it is necessary to minimize the path of the electron beam (EB) through the vapor cloud, and to keep away backscattered electrons from the evaporating material. According to the invention, this problem is solved by assembling a sector field with a vertical field direction at the deflection system connected with the EB gun, which is followed by a deflection field with a horizontal field direction. The divergent electron beam is guided in lines to the evaporating material by the geometry of the fields.
摘要翻译：本发明是用于温度敏感的宽条或类似基底的涂布装置。为了获得高质量的涂层，必须使通过蒸汽云的电子束（EB）的路径最小化，并且避免反向散射的电子从蒸发材料中排出。根据本发明，通过在与EB喷枪连接的偏转系统上组装具有垂直场方向的扇区场来解决该问题，随后是具有水平场方向的偏转场。发散电子束通过场的几何形状被引导到蒸发材料。

3. 发明授权

US4778974A Electron beam line evaporator 失效
标题翻译：电子束线蒸发器
公开(公告)号：US4778974A
公开(公告)日：1988-10-18
申请号：US37662
申请日：1987-04-13
申请人： Manfred Neumann , Siegfried Schiller , Henry Morgner , Peter Unganz
发明人： Manfred Neumann , Siegfried Schiller , Henry Morgner , Peter Unganz
IPC分类号： H01J37/147 , H01J37/305 , B23K15/00
CPC分类号： H01J37/305 , H01J37/147
摘要： An electron beam line evaporator for coating heat-sensitive strips or substrates includes a magnetic trap overlying an evaporation crucible to prevent unpermissible heating and static electrification by back-scattered electrons, complemented with means to influence the injection angle of a dynamically deflected electron beam in such a manner that the beam enters the horizontal magnetic field of the trap at the same angle in each deflection phase independent of stray fields. Such means are arranged inside a gap of a pole shoe necessary for the horizontal magnetic field used by the trap and are operative to generate a vertical magnetic field variable in time and locally alongside the pole shoe.
摘要翻译：用于涂覆热敏胶条或基材的电子束线蒸发器包括覆盖在蒸发坩埚上的磁捕集器，以防止不可允许的加热和由后向散射的电子静电带电，补充了影响动态偏转的电子束在其中的注入角度的手段波束在每个偏转阶段以相同的角度进入陷阱的水平磁场，而不考虑杂散场。这种装置布置在用于由捕集器使用的水平磁场所需的极靴的间隙内，并且可操作地在时间上产生可变的垂直磁场并且在极靴旁边局部地产生。

4. 发明授权

US5846608A Process for ion-supported vacuum coating 失效
标题翻译：离子支持真空镀膜工艺
公开(公告)号：US5846608A
公开(公告)日：1998-12-08
申请号：US722024
申请日：1996-10-11
申请人： Manfred Neumann , Klaus Goedicke , Siegfried Schiller , Jonathan Reschke , Henry Morgner , Falk Milde , Fred Fietzke
发明人： Manfred Neumann , Klaus Goedicke , Siegfried Schiller , Jonathan Reschke , Henry Morgner , Falk Milde , Fred Fietzke
IPC分类号： H05H1/32 , C23C14/32 , C23C14/56 , H01J37/32 , H05H1/46 , C23C14/08
CPC分类号： H01J37/32422 , C23C14/32 , C23C14/562 , H01J37/32706
摘要： A process an device for ion-supported vacuum coating. The process and the affiliated device is intended to permit the high-rate ating of large-surfaced, electrically conductive and electrically insulating substrates with electrically insulating and electrically conductive coatings with relatively low expenditure. The substrates are predominantly band-shaped, in particular plastic sheets with widths of over a meter. According to the invention, in an intrinsically known device for vacuum coating, alternating negative and positive voltage pulses are applied to the electrically conductive substrate or in electrically insulating substrates, to an electrode disposed directly behind them, e.g. the cooling roller, relative to the plasma or to an electrode that is disposed almost at plasma potential. The form, the voltage, and the duration of the pulses are adapted to the coating task and the material. The process is used particularly for depositing abrasion protection, corrosion protection, and barrier coatings. The user is the packaging industry, among others.
摘要翻译： PCT No.PCT / DE95 / 00476 Sec。 371日期：1996年10月11日 102（e）日期1996年10月11日PCT提交1995年4月7日PCT公布。公开号WO95 / 28508 日期：1995年10月26日一种用于离子支持真空涂层的装置。该方法和附属装置旨在允许具有相对较低支出的具有电绝缘和导电涂层的大表面，导电和电绝缘基板的高速涂布。基底主要是带状，特别是宽度超过一米的塑料片。根据本发明，在本来已知的用于真空涂覆的装置中，将交替的负电压和正电压脉冲施加到导电衬底或电绝缘衬底，直接设置在其后面的电极，例如，冷却辊相对于等离子体或几乎处于等离子体电位的电极。脉冲的形式，电压和持续时间适用于涂层任务和材料。该方法特别用于沉积磨损保护，防腐蚀和阻隔涂层。用户是包装行业等。

5. 发明授权

US6130002A Process for producing organically modified oxide, oxynitride or nitride layers by vacuum deposition 失效
标题翻译：通过真空沉积生产有机改性氧化物，氮氧化物或氮化物层的方法
公开(公告)号：US6130002A
公开(公告)日：2000-10-10
申请号：US91487
申请日：1998-07-22
申请人： Manfred Neumann , Siegfried Schiller , Henry Morgner , Nicolas Schiller , Steffen Straach
发明人： Manfred Neumann , Siegfried Schiller , Henry Morgner , Nicolas Schiller , Steffen Straach
IPC分类号： C23C14/00 , C23C14/08 , C23C14/32 , B32B9/00 , H05H1/00
CPC分类号： C23C14/08 , C23C14/0021 , C23C14/32 , Y10T428/31663
摘要： Method for producing at least one organically-modified oxide, oxinitride or nitride layer by vacuum coating on a substrate through plasma-enhanced evaporation of evaporation material comprising nitride-forming evaporation material and one of oxide and suboxide evaporation material, wherein the at least one layer is deposited through plasma-enhanced, reactive high-rate evaporation of the evaporation material with use of gaseous monomers and a reactive gas including at least one of oxygen and nitrogen, and wherein the evaporation material, gaseous monomers, and reactive gas pass through a high-density plasma zone immediately in front of the substrate. A method for producing at least one organically-modified oxide, oxinitride or nitride layer by vacuum coating on a substrate through plasma-enhanced evaporation of one of oxide and suboxide evaporation material, wherein the at least one layer is deposited through plasma-enhanced, reactive high-rate evaporation of the evaporation material with use of gaseous monomers and a reactive gas including at least one of oxygen and nitrogen, and wherein the evaporation material, gaseous monomers, and reactive gas pass through a high-density plasma zone immediately in front of the substrate. Substrates with an organically-modified oxide, oxinitride or nitride layer, as produced by the methods, wherein the at least one layer deposited by plasma-enhanced, high-rate vapor deposition includes more than 50 wt% of inorganic molecules and less than 50 wt% of partially cross-linked organic molecules.
摘要翻译： PCT No.PCT / DE96 / 02434 Sec。 371日期：1998年7月22日 102（e）日期1998年7月22日PCT 1996年12月13日PCT PCT。公开号WO97 / 23661 日期1997年7月3日通过使包含氮化物形成蒸发材料和氧化物和低氧化物蒸发材料之一的蒸发材料的等离子体增强蒸发在衬底上真空涂覆来生产至少一种有机改性氧化物，氮氧化物或氮化物层的方法，其中通过使用气体单体和包括氧和氮中的至少一种的反应性气体，通过等离子体增强的反应性高速蒸发蒸发材料沉积至少一层，并且其中蒸发材料，气体单体和反应性气体立即在基板的前方通过高密度等离子体区域。一种用于通过氧化物和低氧化物蒸发材料之一的等离子体增强蒸发在衬底上真空涂覆来生产至少一种有机改性氧化物，氮氧化物或氮化物层的方法，其中所述至少一层通过等离子体增强的反应性沉积使用气体单体和包括至少一种氧气和氮气的反应气体蒸发材料的高速蒸发，并且其中蒸发材料，气体单体和反应性气体立即通过高密度等离子体区域底物。通过该方法制备的具有有机改性的氧化物，氮氧化物或氮化物层的衬底，其中通过等离子体增强的高速气相沉积沉积的至少一层包括超过50重量％的无机分子和小于50重量％％的部分交联的有机分子。

6. 发明授权

US5635087A Apparatus for plasma-assisted high rate electron beam vaporization 失效
标题翻译：等离子体辅助高速电子束蒸发装置
公开(公告)号：US5635087A
公开(公告)日：1997-06-03
申请号：US416869
申请日：1995-06-12
申请人： Siegfried Schiller , Manfred Neumann , Henry Morgner
发明人： Siegfried Schiller , Manfred Neumann , Henry Morgner
IPC分类号： C23C14/30 , C23C14/10 , C23C14/32 , C23C14/54 , H01J37/305 , B23K10/00
CPC分类号： C23C14/10 , C23C14/32 , H01J37/3053 , H01J37/3266 , H01J2237/3137
摘要： It is known that improved coating properties can be obtained by plasma action in vacuum deposition, especially by vaporization. Substantially higher coating rates can be attained in vapor deposition, but, with high plasma densities, they result in excessive scattering of the electron beam and reduce the power density. According to the invention, a plasma source, preferably a hollow cathode are source, is arranged in the immediate vicinity of the substrate. Between the evaporator and the substrate there is a device for generating a magnetic field so that the region of high plasma density is separated from the evaporator and the electron beam by the magnetic field. The boundary field lines of this magnetic field run along an arc curving with respect to the substrate.

7. 发明授权

US07014889B2 Process and apparatus for plasma activated depositions in a vacuum 有权
标题翻译：在真空中等离子体激活沉积的方法和装置
公开(公告)号：US07014889B2
公开(公告)日：2006-03-21
申请号：US10297347
申请日：2001-05-23
申请人： James F. Groves , Derek D. Hass , Haydn N. G. Wadley , Goesta Mattausch , Henry Morgner , Siegfried Schiller
发明人： James F. Groves , Derek D. Hass , Haydn N. G. Wadley , Goesta Mattausch , Henry Morgner , Siegfried Schiller
IPC分类号： H05H1/24
CPC分类号： C23C14/228 , C23C14/30 , C23C14/32 , H01J37/3053 , H01J37/32055 , H01J2237/3137 , Y02T50/67
摘要： Plasma deposition apparatus (1) and method that allows metal or nonmetal vapor (6) to be generated by electron-beam evaporation, guides that vapor using a noble gas stream (containing reactive gases in cases of reactive evaporation), ionizes the dense directed gas and vapor stream at working pressures above about 0.0001 mbar using a hollow cathode plasma arc discharge (11), and conveys the ionized vapor and/or gas stream towards the substrate (4) for impact on the surface at energies varying from thermal levels (as low as about 0.05 eV) up to about 300 eV.
摘要翻译：等离子体沉积装置（1）和允许通过电子束蒸发产生金属或非金属蒸汽（6）的方法引导使用惰性气体流（在反应蒸发的情况下含有反应气体）的蒸气将致密导向气体和使用空心阴极等离子体电弧放电（11）的工作压力高于约0.0001毫巴的蒸汽流，并将离子化的蒸汽和/或气流输送到衬底（4），以在从热水平变化的能量（如低至约0.05eV）至多约300eV。

8. 发明授权

US09640369B2 Coaxial hollow cathode plasma assisted directed vapor deposition and related method thereof 有权
公开(公告)号：US09640369B2
公开(公告)日：2017-05-02
申请号：US13202828
申请日：2010-02-24
申请人： Haydn N. G. Wadley , Goesta Mattausch , Henry Morgner , Frank-Holm Roegner
发明人： Haydn N. G. Wadley , Goesta Mattausch , Henry Morgner , Frank-Holm Roegner
IPC分类号： C23C16/00 , H01J37/32 , C23C14/22 , C23C14/24 , C23C14/30 , C23C14/32 , H01J37/305 , H01J37/34
CPC分类号： H01J37/32596 , C23C14/228 , C23C14/246 , C23C14/30 , C23C14/32 , H01J37/3053 , H01J37/32055 , H01J37/3233 , H01J37/32339 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01J37/32568 , H01J37/34 , H01J2237/332
摘要： A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.

9. 发明申请

US20110318498A1 Coaxial Hollow Cathode Plasma Assisted Directed Vapor Deposition and Related Method Thereof 有权
标题翻译：同轴空心阴极等离子体辅助导向气相沉积及其相关方法
公开(公告)号：US20110318498A1
公开(公告)日：2011-12-29
申请号：US13202828
申请日：2010-02-24
申请人： Haydn N.G. Wadley , Goesta Mattausch , Henry Morgner , Frank-Holm Roegner
发明人： Haydn N.G. Wadley , Goesta Mattausch , Henry Morgner , Frank-Holm Roegner
IPC分类号： C23C16/50 , C23C16/52 , C23C16/515 , C23C16/503 , C23C16/48
CPC分类号： H01J37/32596 , C23C14/228 , C23C14/246 , C23C14/30 , C23C14/32 , H01J37/3053 , H01J37/32055 , H01J37/3233 , H01J37/32339 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01J37/32568 , H01J37/34 , H01J2237/332
摘要： A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.
摘要翻译：通常对气相沉积方法进行更优化的等离子体生成方法，特别是用于定向气相沉积处理。这种方法的特征使得能够稳定和可靠地同轴等离子体能力，其中等离子体射流与蒸气羽流同轴，而不是产生先前缺点的正交构造。以这种方式，可以避免先前由空心阴极管的工作气体流引起的蒸汽气体射流的变形，并且可以显着地减少用于成形蒸气羽流所需的载气消耗。

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