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1. 发明申请

US20080285974A1 Optical Multiplexer/Demultiplexer 审中-公开
标题翻译：光复用器/解复用器
公开(公告)号：US20080285974A1
公开(公告)日：2008-11-20
申请号：US12120680
申请日：2008-05-15
申请人： Makoto Takahashi , Yasunobu Matsuoka , Masahiro Aoki
发明人： Makoto Takahashi , Yasunobu Matsuoka , Masahiro Aoki
IPC分类号： H04J14/02
CPC分类号： G02B6/29365 , G02B6/29367 , G02B6/2938 , G02B6/42 , G02B6/4246
摘要： An optical multiplexer/demultiplexer comprising a member, of which first and second opposite planar surfaces are parallel to each other. The member includes therein a void, of which third and fourth opposite planar surfaces are in parallel to each other. An extension of a first line lying on the first planar surface and an extension of a third line lying on the third planar surface intersect each other in a cross section including the void of the member, a smaller one of intersection angles thereof being φ1. An extension of a second line lying on the second planar surface and an extension of a fourth line lying on the fourth planar surface intersect each other, a smaller one of intersection angles thereof being φ1. The third planar surface is provided on a part thereof with at least one high reflection coating film. The fourth planar surface is provided on a part thereof with at least one optical wavelength filter. At least parts of the high reflection coating film and the first optical wavelength filter are opposed to each other. The first optical wavelength filter transmits therethrough light of wavelength λ1 and reflects light of wavelength λ2 (here, wavelength λ1≠wavelength λ2). The member and an interior of the void are different in value of refractive index from each other.
摘要翻译：一种光信号多路复用器/解复用器，包括一第一和第二相对平面彼此平行的部件。该构件包括其中第三和第四相对平面彼此平行的空隙。位于第一平坦表面上的第一线的延伸部和位于第三平坦表面上的第三线的延伸线在包括构件的空隙的横截面中彼此相交，较小的一个相交角为φ1。位于第二平坦表面上的第二线的延伸部和位于第四平坦表面上的第四线的延伸部彼此相交，较小的一个相交角为φ1。第三平面设置在其一部分上与至少一个高反射涂膜。第四平面在其一部分上设置有至少一个光波长滤波器。高反射涂膜和第一光波长滤光片的至少一部分彼此相对。第一光学波长滤波器透过波长为λ1的光并且反射波长λ2的光（这里，波长λ1 <>波长λ2）。空隙的构件和内部的折射率值彼此不同。

2. 发明授权

US08755423B2 Surface emitting laser module and vertical illuminated photodiode module 失效
标题翻译：表面发射激光模块和垂直照明光电二极管模块
公开(公告)号：US08755423B2
公开(公告)日：2014-06-17
申请号：US12759024
申请日：2010-04-13
申请人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Masahiro Aoki
发明人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Masahiro Aoki
IPC分类号： H01S5/00
CPC分类号： H01S5/18 , G02B6/322 , G02B6/4214 , G02B6/423 , H01S5/0207 , H01S5/02212 , H01S5/02284 , H01S5/0267 , H01S5/12 , H01S5/18311
摘要： In order to provide a compact optical module permitting highly efficient optical coupling and having components thereof highly densely packaged, a light emitting diode that is included in the optical module and emits light in a vertical direction with respect to a principal surface of a semiconductor substrate is provided with a lens integrated into a light emitting region, and a retaining section integrated to surround the light emitting region. Accordingly, readiness in alignment of the light emitting diode and an optical fiber, which guides light emitted from the light emitting diode, with each other is upgraded. Eventually, the compact optical module permitting highly efficient optical coupling and having components thereof highly densely packaged can be provided.
摘要翻译：为了提供一种紧凑的光学模块，其允许高效光耦合并且具有高密度封装的部件，包括在光学模块中并相对于半导体衬底的主表面沿垂直方向发光的发光二极管是设置有集成到发光区域中的透镜，以及整合在围绕发光区域的保持部分。因此，升级了将发光二极管发出的光引导的发光二极管与光纤对准的准备状态。最终，可以提供允许高效光耦合并且具有高密度封装的部件的紧凑型光学模块。

3. 发明授权

US5543353A Method of manufacturing a semiconductor photonic integrated circuit 失效
标题翻译：制造半导体光子集成电路的方法
公开(公告)号：US5543353A
公开(公告)日：1996-08-06
申请号：US282587
申请日：1994-07-29
申请人： Makoto Suzuki , Masahiro Aoki , Makoto Takahashi , Tsuyoshi Taniwatari
发明人： Makoto Suzuki , Masahiro Aoki , Makoto Takahashi , Tsuyoshi Taniwatari
IPC分类号： G02F1/025 , B82Y20/00 , H01S5/00 , H01S5/026 , H01S5/0625 , H01S5/20 , H01L21/20
CPC分类号： H01S5/0265 , B82Y20/00 , H01L33/0062 , H01S5/0264 , H01S5/06256 , H01S5/2077
摘要： A semiconductor photonic integrated circuit and a manufacturing method thereof involving a selective-area growth technique using a set of insulating film patterning masks formed on a semiconductor substrate. The mask width and the mask-to-mask open space width are variable but numerically limited. A single crystal growth process is carried out to form on the same substrate a plurality of contiguous bulk semiconductor layers or quantum well layers differing from one another in terms of growth layer thickness or composition. The differences in energy level between these layers are utilized so that semiconductor photonic integrated devices of different functions are formed on the substrate.
摘要翻译：一种半导体光子集成电路及其制造方法，涉及使用在半导体基板上形成的一组绝缘膜构图掩模的选择区域生长技术。掩模宽度和掩模到掩模的开放空间宽度是可变的但是数字上的限制。进行单晶生长工艺以在生长层厚度或组成方面在相同的衬底上形成彼此不同的多个连续体半导体层或量子阱层。利用这些层之间的能级差异，使得在衬底上形成不同功能的半导体光子集成器件。

4. 发明授权

US5852304A Optical communication system 失效
标题翻译：光通信系统
公开(公告)号：US5852304A
公开(公告)日：1998-12-22
申请号：US687013
申请日：1996-07-16
申请人： Makoto Suzuki , Masahiro Aoki , Makoto Takahashi , Tsuyoshi Taniwatari
发明人： Makoto Suzuki , Masahiro Aoki , Makoto Takahashi , Tsuyoshi Taniwatari
IPC分类号： G02F1/025 , B82Y20/00 , H01S5/00 , H01S5/026 , H01S5/0625 , H01S5/20 , H01L29/06 , H01S3/19
CPC分类号： H01S5/0265 , B82Y20/00 , H01L33/0062 , H01S5/0264 , H01S5/06256 , H01S5/2077
摘要： A semiconductor photonic integrated circuit and a manufacturing method thereof involving a selective-area growth technique using a set of insulating film patterning masks formed on a semiconductor substrate. The mask width and the mask-to-mask open space width are variable but numerically limited. A single crystal growth process is carried out to form on the same substrate a plurality of contiguous bulk semiconductor layers or quantum well layers differing from one another in terms of growth layer thickness or composition. The differences in energy level between these layers are utilized so that semiconductor photonic integrated devices of different functions are formed on the substrate.
摘要翻译：一种半导体光子集成电路及其制造方法，涉及使用在半导体基板上形成的一组绝缘膜构图掩模的选择区域生长技术。掩模宽度和掩模到掩模的开放空间宽度是可变的但是数字上的限制。进行单晶生长工艺以在生长层厚度或组成方面在相同的衬底上形成彼此不同的多个连续体半导体层或量子阱层。利用这些层之间的能级差异，使得在衬底上形成不同功能的半导体光子集成器件。

5. 发明授权

US5737474A Semiconductor optical device 失效
标题翻译：半导体光学器件
公开(公告)号：US5737474A
公开(公告)日：1998-04-07
申请号：US542840
申请日：1995-10-13
申请人： Masahiro Aoki , Makoto Takahashi , Hiroshi Sato
发明人： Masahiro Aoki , Makoto Takahashi , Hiroshi Sato
IPC分类号： G02F1/025 , G02B6/12 , G02B6/122 , G02F1/225 , H01S5/00 , H01S5/10 , H01S5/223 , H01S5/50 , G02B6/10
CPC分类号： H01S5/10 , G02B6/1228 , H01S5/2231 , G02B2006/12097 , G02B2006/12121 , G02B2006/12142 , G02B2006/12176 , G02B2006/12195 , G02F1/025 , G02F1/2257 , H01S5/1014 , H01S5/1064 , H01S5/50
摘要： A semiconductor optical device is provided which includes a semiconductor substrate, a first core layer disposed on the substrate with a second core layer being interposed between the substrate and the first core layer. The second core layer has a lower refractive index than that of the first core layer. A ridge-shaped optical waveguide region is formed in a top surface of the first core layer. The width of the ridge-shaped optical waveguide is modulated along a direction which coincides with an optical axis of the semiconductor optical device. Further, the width of a bottom surface of the ridge-shaped optical waveguide is selected not to be greater than 4 .mu.m over a whole length thereof.
摘要翻译：提供一种半导体光学器件，其包括半导体衬底，设置在衬底上的第一芯层，第二芯层插入在衬底和第一芯层之间。第二芯层的折射率低于第一芯层的折射率。在第一芯层的顶表面上形成脊形光波导区域。沿着与半导体光学器件的光轴重合的方向调制脊形光波导的宽度。此外，脊形光波导的底面的宽度在整个长度上选择为不大于4μm。

6. 发明授权

US5574289A Semiconductor optical integrated device and light receiver using said device 失效
标题翻译：半导体光集成器件和使用该器件的光接收器
公开(公告)号：US5574289A
公开(公告)日：1996-11-12
申请号：US24084
申请日：1993-03-01
申请人： Masahiro Aoki , Hirohisa Sano , Shinji Sakano , Makoto Suzuki , Makoto Takahashi , Kazuhisa Uomi , Tatemi Ido , Atsushi Takai
发明人： Masahiro Aoki , Hirohisa Sano , Shinji Sakano , Makoto Suzuki , Makoto Takahashi , Kazuhisa Uomi , Tatemi Ido , Atsushi Takai
IPC分类号： G02F1/017 , H01L31/0352 , H01L33/00 , H01S5/026 , H01S5/10 , H01S5/12 , H01S5/227 , H01S5/34 , H01S5/343 , H01S5/40 , H01S5/50 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： B82Y20/00 , G02F1/01708 , H01L31/035236 , H01L33/0062 , H01S5/0265 , H01S5/227 , H01S5/34 , G02F2203/07 , H01S5/026 , H01S5/10 , H01S5/106 , H01S5/12 , H01S5/2272 , H01S5/3404 , H01S5/34306 , H01S5/34313 , H01S5/4068 , H01S5/5036
摘要： Disclosed is a semiconductor optical integrated device and method of fabricating the device, the device having a plurality of quantum well structures, formed on a single substrate, acting as optical waveguides, the plurality of quantum well structures respectively having different lattice mismatches with the substrate and/or different strains (e.g., respectively compressive strain and tensile strain). The method includes selectively depositing the quantum well structures by, e.g., organometallic vapor phase epitaxy on growth regions of the substrate, the growth regions being defined by insulating layer patterning masks, with a width of the growth regions and/or a width of the patterning mask being different for the different quantum well structures. Each quantum well structure includes quantum well layers of III-V or II-VI compound semiconductor material, the Group III or Group II elements each including at least two elements, one having a relatively large atomic diameter and another having a relatively small atomic diameter. Also disclosed is a light receiver that can independently absorb TE-mode and TM-mode light in series, which can be used in a polarized-wave diversity receiver for coherent optical communication.
摘要翻译：公开了一种制造该器件的半导体光学集成器件和方法，该器件具有多个量子阱结构，形成在单个衬底上，作为光波导，多个量子阱结构分别与衬底具有不同的晶格错配; /或不同的应变（例如，分别为压缩应变和拉伸应变）。该方法包括通过例如在衬底的生长区域上的有机金属气相外延选择性地沉积量子阱结构，生长区域由绝缘层图案化掩模限定，具有生长区域的宽度和/或图案化宽度掩模对于不同的量子阱结构是不同的。每个量子阱结构包括III-V或II-VI族化合物半导体材料的量子阱层，III族或II族元素各自包含至少两种元素，一种具有较大的原子直径，另一种具有较小的原子直径。还公开了可以独立地吸收串联的TE模式和TM模式光的光接收器，其可以用于用于相干光通信的偏振波分集接收器中。

7. 发明授权

US08449160B2 Multi-wavelength light emitting device 有权
标题翻译：多波长发光装置
公开(公告)号：US08449160B2
公开(公告)日：2013-05-28
申请号：US12849352
申请日：2010-08-03
申请人： Kenichi Tanaka , Masahiro Aoki , Tsukuru Ohtoshi
发明人： Kenichi Tanaka , Masahiro Aoki , Tsukuru Ohtoshi
IPC分类号： F21V7/04
CPC分类号： G02B6/4204 , G02B27/0994 , G02B27/1006 , G02B27/104 , G02B27/123 , H01S5/02212 , H01S5/02284 , H01S5/4012 , H01S5/4093 , H04N9/3129 , H04N9/3161
摘要： A multi-wavelength light emitting device includes the following three sections; a light source section having multiple luminous points that emit multiple light beams, a condenser lens section that concentrates the light beams emitted from the luminous points, and a light guide section that propagates superposedly and mixedly the light beams concentrated by the condenser lens section after emission thereof from the luminous points.
摘要翻译：多波长发光器件包括以下三个部分; 具有发射多个光束的多个发光点的光源部分，聚集从发光点发射的光束的聚光透镜部分和在发射之后叠加并混合由聚光透镜部分聚集的光束的导光部分来自发光点。

8. 发明授权

US08179931B2 Wavelength tunable filter and wavelength tunable laser module 有权
标题翻译：波长可调滤波器和波长可调激光模块
公开(公告)号：US08179931B2
公开(公告)日：2012-05-15
申请号：US12622785
申请日：2009-11-20
申请人： Hideo Arimoto , Masahiro Aoki
发明人： Hideo Arimoto , Masahiro Aoki
IPC分类号： H01S3/10
CPC分类号： G02F1/3133 , H01S5/06256 , H01S5/1032 , H01S5/1035
摘要： A wavelength tunable filter and a wavelength tunable laser module are a codirectional coupler type whose characteristics do not vary significantly with a process error. They are structured so as to include a semiconductor substrate which has a first optical waveguide and a second optical waveguide. The first and the second optical waveguides are extended from a first side of the semiconductor substrate to an opposing second side thereof. The first optical waveguide includes a first core layer, which has a planar layout having periodic convexes and concaves, and a pair of electrodes, which vertically sandwich the first core layer. The second optical waveguide includes a second core layer, which has a lower refractive index than the first core layer. Further, a layer having the same composition and film thickness as the second core layer is placed under the first core layer.
摘要翻译：波长可调滤波器和波长可调激光器模块是一种同向耦合器类型，其特性与处理误差不会显着变化。它们被构造成包括具有第一光波导和第二光波导的半导体衬底。第一和第二光波导从半导体衬底的第一侧延伸到相对的第二侧。第一光波导包括具有周期性凸起和凹陷的平面布局的第一芯层和垂直夹着第一芯层的一对电极。第二光波导包括具有比第一芯层低的折射率的第二芯层。此外，具有与第二芯层相同的组成和膜厚度的层被放置在第一芯层下方。

9. 发明申请

US20110227116A1 LIGHT-EMITTING DEVICE, LIGHT-RECEIVING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置，光接收装置及其制造方法
公开(公告)号：US20110227116A1
公开(公告)日：2011-09-22
申请号：US13129115
申请日：2009-10-21
申请人： Shinichi Saito , Masahiro Aoki , Nobuyuki Sugii , Katsuya Oda , Toshiki Sugawa
发明人： Shinichi Saito , Masahiro Aoki , Nobuyuki Sugii , Katsuya Oda , Toshiki Sugawa
IPC分类号： H01L33/34 , H01L33/60 , H01L31/028 , H01L31/18
CPC分类号： H01S5/3201 , H01L31/103 , H01L31/1808 , H01S5/0208 , H01S5/021 , H01S5/026 , H01S5/0264 , H01S5/0424 , H01S5/1032 , H01S5/1231 , H01S5/125 , H01S5/3223 , Y02E10/50
摘要： An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.
摘要翻译：本发明的目的是提供一种可以通过使用普通硅工艺容易地在诸如硅的衬底上形成的锗激光二极管，并且能够有效发光。根据本发明的锗发光器件是锗激光二极管，其特征在于将拉伸应变施加到作为直接转变型的发光层的单晶锗，由硅制成的薄半导体层，锗或锗锗与锗发光层的两端相邻连接，薄型半导体层具有能够防止量子限制效应发生的一定程度的厚度，薄半导体层的另一端与以高浓度掺杂有杂质的厚电极，电极被掺杂成ap型和n型，形成波导以不与电极直接接触，并且在波导的端部形成反射镜。

10. 发明申请

US20110098477A1 Method Of Producing Compound Having Anti-Hcv Activity 审中-公开
标题翻译：生产具有抗Hcv活性的化合物的方法
公开(公告)号：US20110098477A1
公开(公告)日：2011-04-28
申请号：US11988003
申请日：2006-06-27
申请人： Masahiro Aoki , Yoshie Nagahashi , Hideyuki Kato , Tatsuya Ito , Miyako Masubuchi , Toru Okuda
发明人： Masahiro Aoki , Yoshie Nagahashi , Hideyuki Kato , Tatsuya Ito , Miyako Masubuchi , Toru Okuda
IPC分类号： C07D213/55 , C07C229/36 , C12P13/04
CPC分类号： C07C229/36 , C07C231/14 , C12P13/02 , C07C235/76
摘要： There is provided a convenient and inexpensive method of producing a compound which has a high activity of inhibiting replication of hepatitis C virus (HCV) and is useful for preventing and treating a liver disease caused by HCV infection.It is a method of biologically producing a compound represented by the formula (1): [wherein A represents a hydrogen atom, a straight or branched alkyl group having 1 to 8 carbon atoms, or the like], or a pharmaceutically acceptable salt thereof, a method comprising adding an amino acid derivative represented by the formula (3): [wherein A has the same meaning as defined for the compound of the above formula (1); and R represents a hydrogen atom, a straight or branched alkyl group having 1 to 8 carbon atoms, or the like], or a salt thereof into the fungal mycelium or the culture medium/culture broth of a filamentous fungal strain having an ability to produce the compound represented by the formula (2): to thereby cause the fungal strain to directly produce the compound of the formula (1).
摘要翻译：提供了一种方便且廉价的生产具有抑制丙型肝炎病毒（HCV）复制活性的化合物的方法，并且可用于预防和治疗由HCV感染引起的肝脏疾病。生物地制造式（1）表示的化合物或其药学上可接受的盐的方法：[其中A表示氢原子，碳原子数1〜8的直链或支链烷基等] 包括加入由式（3）表示的氨基酸衍生物的方法：[其中A具有与上述式（1）的化合物相同的含义; R表示氢原子，碳原子数为1〜8的直链或支链烷基等，或其盐形成具有生产能力的丝状真菌菌株的真菌菌丝体或培养液/培养液由式（2）表示的化合物：由此使真菌菌株直接生成式（1）的化合物。

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