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    • 6. 发明授权
    • Method for reproducing data and an apparatus for recording and reproducing data
    • 用于再现数据的方法和用于记录和再现数据的装置
    • US07457215B2
    • 2008-11-25
    • US10929892
    • 2004-08-30
    • Masashi KuwaharaTakayuki ShimaJunji TominagaTakashi KikukawaNarutoshi FukuzawaTatsuhiro Kobayashi
    • Masashi KuwaharaTakayuki ShimaJunji TominagaTakashi KikukawaNarutoshi FukuzawaTatsuhiro Kobayashi
    • G11B7/00
    • G11B19/26G11B7/005G11B7/1267G11B7/24
    • A method for reproducing data according to the present invention is adapted for reproducing data recorded in an optical recording disc including a multi-layered body formed by forming a decomposition reaction layer containing noble metal oxide as a primary component and a light absorption layer so as to sandwich a dielectric layer therebetween by irradiating a laser beam onto the optical recording disc and forming a recording mark train including at least one of a recording mark having a length shorter than a resolution limit and a blank region having a length shorter than the resolution limit therein, and is constituted by changing the read power Pr of the laser beam in accordance with a readout linear velocity at which data are to be reproduced from the optical recording disc. According to the thus constituted method for reproducing data, even in the case where the length of a recording mark or the length of a blank region between neighboring recording marks is shorter than the resolution limit, it is possible to record and reproduce a recording mark train including these recording marks and the blank regions. Therefore, this method can be applied to an optical recording medium whose storage capacity is markedly increased.
    • 根据本发明的再现数据的方法适用于再现记录在包括通过形成含有贵金属氧化物作为主要成分的分解反应层和光吸收层而形成的多层体的光学记录盘中的数据,以便 通过将激光束照射到光学记录盘上并形成包括长度小于分辨率极限的记录标记和长度小于分辨率极限的空白区域中的至少一个的记录标记列,夹在其间的电介质层 并且通过根据从光记录盘再现数据的读出线速度来改变激光束的读取功率Pr构成。 根据这样构成的再现数据的方法,即使在记录标记的长度或相邻记录标记之间的空白区域的长度短于分辨率极限的情况下,也可以记录和再现记录标记列 包括这些记录标记和空白区域。 因此,该方法可以应用于存储容量明显增加的光记录介质。
    • 7. 发明授权
    • Conductivity-modulated semiconductor device with high breakdown voltage
    • 具有高击穿电压的电导率调制半导体器件
    • US5444271A
    • 1995-08-22
    • US105630
    • 1993-08-13
    • Masashi Kuwahara
    • Masashi Kuwahara
    • H01L29/78H01L21/331H01L21/336H01L29/08H01L29/739H01L21/223H01L27/02H01L29/74
    • H01L29/66333H01L29/0834H01L29/7392
    • Base regions of a second conductivity type are formed and spaced apart from one another in a first major surface of a semiconductor substrate of a first conductivity type which functions as a drain region. Source regions of the first conductivity type are formed in each of the base regions and spaced apart from one another. Gate insulating films are formed on portions of the drain region which are located between adjacent source regions. Gates are formed on the gate insulating films. Source electrodes are formed such that each electrode short-circuits one-base region to the source regions formed in the base region. A first anode region of the second conductivity type is formed on a second major surface of the semiconductor substrate. A second anode region of the second conductivity type is formed on the first anode region. This second anode region is made of polycrystalline silicon of the second conductivity type and has an impurity concentration higher than that of the first anode region. An anode electrode is formed on the second anode region.
    • 在第一导电类型的半导体衬底的第一主表面中形成第二导电类型的基极区域并且彼此间隔开,其用作漏极区域。 第一导电类型的源极区域形成在每个基极区域中并且彼此间隔开。 栅极绝缘膜形成在位于相邻源极区域之间的漏极区域的部分上。 栅极形成在栅极绝缘膜上。 源电极形成为使得每个电极将一个碱基区域短路到形成在基极区域中的源极区域。 第二导电类型的第一阳极区域形成在半导体衬底的第二主表面上。 第二导电类型的第二阳极区形成在第一阳极区上。 该第二阳极区由第二导电类型的多晶硅制成,其杂质浓度高于第一阳极区的杂质浓度。 阳极电极形成在第二阳极区域上。