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1. 发明申请

US20110284923A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110284923A1
公开(公告)日：2011-11-24
申请号：US13051984
申请日：2011-03-18
申请人： Shuji KAMATA
发明人： Shuji KAMATA
IPC分类号： H01L29/739 , H01L21/331
CPC分类号： H01L29/66712 , H01L21/2257 , H01L29/0619 , H01L29/0696 , H01L29/1095 , H01L29/41741 , H01L29/41766 , H01L29/42368 , H01L29/456 , H01L29/66333 , H01L29/66727 , H01L29/7395 , H01L29/7811
摘要： A semiconductor device includes: a first semiconductor region; a second semiconductor region provided on a first major surface of the first semiconductor region; a first major electrode; a third semiconductor region provided in a part of a third major surface of the second semiconductor region; a fourth semiconductor region provided in a part of a fourth major surface of the third semiconductor region; a second major electrode; a control electrode; a fifth semiconductor region; and a sixth semiconductor. The fifth semiconductor region is provided passing through the fourth semiconductor region along a direction perpendicular to the fourth major surface of the third semiconductor region. The sixth semiconductor region is provided in contact with a bottom part of the fourth semiconductor region, and has a higher impurity concentration than the third semiconductor region.
摘要翻译：一种半导体器件包括：第一半导体区域; 设置在所述第一半导体区域的第一主表面上的第二半导体区域; 第一主电极; 设置在所述第二半导体区域的第三主表面的一部分中的第三半导体区域; 设置在所述第三半导体区域的第四主表面的一部分中的第四半导体区域; 第二主电极; 控制电极; 第五半导体区域; 和第六半导体。第五半导体区域沿着与第三半导体区域的第四主表面垂直的方向设置穿过第四半导体区域。第六半导体区域设置成与第四半导体区域的底部接触，并且具有比第三半导体区域更高的杂质浓度。

2. 发明申请

US20110233607A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233607A1
公开(公告)日：2011-09-29
申请号：US13050818
申请日：2011-03-17
申请人： Satoshi Yanagisawa , Shuji Kamata
发明人： Satoshi Yanagisawa , Shuji Kamata
IPC分类号： H01L29/739 , H01L21/331
CPC分类号： H01L29/7397 , H01L29/0623 , H01L29/0653 , H01L29/0834 , H01L29/4236
摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the second conductivity type, and a control electrode. The first semiconductor region is provided selectively on a first major surface of the first semiconductor layer. The second semiconductor region is provided selectively on the first major surface in contact with the first semiconductor region. The third semiconductor region is provided selectively on a surface of the first semiconductor region. The fourth semiconductor region is provided to face a projecting surface between a side surface and a bottom surface of the first semiconductor region with the second semiconductor region interposed. The control electrode is provided on the first semiconductor layer, the first semiconductor region, the second semiconductor region, and the third semiconductor region via an insulating film.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的第一半导体层，第二导电类型的第一半导体区域，第一导电类型的第二半导体区域，第一导电类型的第三半导体区域，第二导电类型的第四半导体区域和控制电极。第一半导体区域选择性地设置在第一半导体层的第一主表面上。选择性地在与第一半导体区域接触的第一主表面上提供第二半导体区域。第三半导体区域选择性地设置在第一半导体区域的表面上。第四半导体区域被设置为面对第一半导体区域的侧表面和底表面之间的突出表面，并且第二半导体区域被插入。控制电极经由绝缘膜设置在第一半导体层，第一半导体区域，第二半导体区域和第三半导体区域上。

3. 发明申请

US20060017159A1 Semiconductor device and method of manufacturing a semiconductor device 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060017159A1
公开(公告)日：2006-01-26
申请号：US11185777
申请日：2005-07-21
申请人： Shuji Kamata
发明人： Shuji Kamata
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L24/85 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05552 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/05647 , H01L2224/0603 , H01L2224/16 , H01L2224/16245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48463 , H01L2224/48465 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/49111 , H01L2224/49113 , H01L2224/49176 , H01L2224/85 , H01L2224/85205 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10161 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2224/78 , H01L2924/00 , H01L2924/00012
摘要： According to an aspect of the present invention, there is provided a semiconductor device including a lead frame, a semiconductor chip, a back surface opposed to a main surface of the semiconductor chip disposed on the lead frame, a first electrode formed on the main surface of the semiconductor chip, the first electrode being composed of Al as a main component, a wiring, one end portion of the wiring being connected to the first electrode, and the other end portion of the wiring being connected to a lead terminal of the lead frame, a second electrode formed on the first electrode, the second electrode selectively formed except an area at least connected the one end portion of the wiring, and being composed of Cu as a main component.
摘要翻译：根据本发明的一个方面，提供了一种半导体器件，包括引线框架，半导体芯片，与设置在引线框架上的半导体芯片的主表面相对的背面，形成在主表面上的第一电极所述第一电极由Al作为主要成分构成，所述布线的一端部与所述第一电极连接，所述布线的另一端部与所述引线的引线端子连接形成在所述第一电极上的第二电极，所述第二电极选择性地形成，除了至少连接所述布线的一个端部的区域以外，以Cu为主要成分。

4. 发明申请

US20120241814A1 POWER SEMICONDUCTOR DEVICE 审中-公开
标题翻译：功率半导体器件
公开(公告)号：US20120241814A1
公开(公告)日：2012-09-27
申请号：US13425250
申请日：2012-03-20
申请人： Shuji KAMATA , Masakazu Kobayashi
发明人： Shuji KAMATA , Masakazu Kobayashi
IPC分类号： H01L29/739
CPC分类号： H01L29/7397 , H01L29/0834 , H01L29/51
摘要： A power semiconductor device includes a p-type collector layer, an n-type base layer, a p-type base layer, an n-type source layer, and a gate electrode. The gate electrode is formed in a trench running from a surface of the n-type source layer through the n-type source layer and the p-type base layer to an interior of the n-type base layer via a gate insulating film. The gate electrode includes a first portion and a second portion. The first portion is opposed to a bottom end portion of the p-type base layer. The second portion is opposed to an upper end portion of the p-type base layer. The gate electrode is formed such that a threshold at the bottom end portion of the p-type base layer is not less than a threshold at the upper end portion of the p-type base layer.
摘要翻译：功率半导体器件包括p型集电极层，n型基极层，p型基极层，n型源极层和栅电极。栅电极形成在从n型源极的表面通过n型源极层和p型基极层经由栅极绝缘膜向n型基极层的内部延伸的沟槽中。栅电极包括第一部分和第二部分。第一部分与p型基底层的底端部分相对。第二部分与p型基底层的上端部相对。栅电极形成为使p型基极层的底端部的阈值为p型基底层的上端部的阈值以上。

5. 发明授权

US6060744A Semiconductor device with a main current cell region and a current detecting cell region 失效
标题翻译：具有主电流单元区域和电流检测单元区域的半导体器件
公开(公告)号：US6060744A
公开(公告)日：2000-05-09
申请号：US959275
申请日：1997-10-28
申请人： Masashi Kuwahara , Shuji Kamata
发明人： Masashi Kuwahara , Shuji Kamata
IPC分类号： G01R19/00 , H01L21/66 , H01L21/822 , H01L27/04 , H01L29/06 , H01L29/739 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L29/7813 , H01L29/7395 , H01L29/7815 , H01L29/0696
摘要： In a current detecting cell of a MOS-type semiconductor device with a current detection function, the area of the contact portions of source regions which contact a current detecting electrode is greater than that of that contact portion of a base region which contacts the current detecting electrode. With this feature, a parasitic resistance does no sharply decrease even if a detected voltage increases, and therefore, current can be detected accurately.
摘要翻译：在具有电流检测功能的MOS型半导体器件的电流检测单元中，与电流检测电极接触的源极区域的接触部分的面积大于接触电流检测的基极区域的接触部分的面积电极。利用该特征，即使检测到的电压增加，寄生电阻也不会急剧下降，因此可以精确地检测电流。

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