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1. 发明授权

US08187786B2 Pattern forming materials and pattern formation method using the materials 有权
标题翻译：图案形成材料和图案形成方法使用材料
公开(公告)号：US08187786B2
公开(公告)日：2012-05-29
申请号：US10531897
申请日：2003-10-20
申请人： Joo-Ho Kim , Junji Tominaga , Masashi Kuwahara
发明人： Joo-Ho Kim , Junji Tominaga , Masashi Kuwahara
IPC分类号： G03F7/00
CPC分类号： G11B7/261 , B41M5/26 , B41M5/368 , B41M5/46 , B41M5/465
摘要： A pattern forming materials includes a thermal sensitive material layer formed on a target substrate, a first light-to-heat converting layer formed between the thermal sensitive material layer and the target substrate, and a second light-to-heat converting layer formed on a surface of the thermal sensitive material layer opposite to the first light-to-heat converting layer, the thermal sensitive material layer being interposed between the first and second light-to-heat converting layers. A higher aspect ratio fine pattern can be formed in the thermal sensitive material layer made of photoresist using heat generated in the first and second light-to-heat converting layers formed on both surfaces of the thermal sensitive material layer.
摘要翻译：图案形成材料包括形成在目标基板上的热敏材料层，形成在热敏材料层和目标基板之间的第一光热转换层和形成在热敏材料层上的第二光热转换层所述热敏材料层的表面与所述第一光热转换层相对，所述热敏材料层插入在所述第一和第二光热转换层之间。可以在形成在热敏材料层的两个表面上的第一和第二光热转换层中产生的热量的光致抗蚀剂材料层中形成更高的纵横比精细图案。

2. 发明授权

US07479656B2 Compound semiconductor formed from a heated portion of a layered structure including rare earth transition metal 有权
标题翻译：由包括稀土类过渡金属的层状结构的加热部分形成的化合物半导体
公开(公告)号：US07479656B2
公开(公告)日：2009-01-20
申请号：US11109389
申请日：2005-04-19
申请人： Joo-Ho Kim , Junji Tominaga
发明人： Joo-Ho Kim , Junji Tominaga
IPC分类号： H01L29/10
CPC分类号： H01L29/247 , H01L21/76888 , H01L23/5258 , H01L27/10873 , H01L29/263 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a compound semiconductor includes the steps of forming a layered structure of dielectric layers including oxygen or sulfur, and an inter layer formed between the dielectric layers, including rare earth transition metal that is highly reactive to oxygen and sulfur, and heating the layered structure. As a result of the chemical reaction and diffusion of elements, one can change a heated portion of the layered structure to a semiconductor or an insulator, depending on the temperature to which the portion is heated.
摘要翻译：制造化合物半导体的方法包括以下步骤：形成包括氧或硫的电介质层的层叠结构，以及形成在介电层之间的层间，包括对氧和硫具有高反应性的稀土过渡金属，并加热分层结构。作为元件的化学反应和扩散的结果，可以根据加热部分的温度，将层状结构的加热部分改变为半导体或绝缘体。

3. 发明授权

US07572496B2 Recording medium having high melting point recording layer, information recording method thereof, and information reproducing apparatus and method therefor 有权
标题翻译：具有高熔点记录层的记录介质，其信息记录方法及其信息再现装置及方法
公开(公告)号：US07572496B2
公开(公告)日：2009-08-11
申请号：US10514422
申请日：2003-05-16
申请人： Joo-Ho Kim , Junji Tominaga
发明人： Joo-Ho Kim , Junji Tominaga
IPC分类号： B32B3/02
CPC分类号： B82Y10/00 , G11B7/24 , G11B7/243 , G11B7/257 , G11B7/2585 , G11B7/259 , G11B2007/24306 , Y10T428/21
摘要： A simple-structured recording medium without a mask layer and information recording and reproducing methods, which resolve thermal stability related problems arising during reproduction, the recording medium including a high melting point recording layer between first and second dielectric layers. The method of recording information on the recording medium involves irradiating a laser beam onto the recording medium to induce reaction and diffusion in the high melting point recording layer and the first and second dielectric layers. The method of reproducing information recorded on such a super-resolution near-field recording medium by the above method involves generating plasmon using crystalline particles of the high melting point recording layer and the first and second dielectric layers as a scatter source to reproduce information regardless of a diffraction limit of a laser used.
摘要翻译：具有掩模层的简单结构的记录介质和信息记录和再现方法，其解决在再现期间产生的热稳定性相关问题，记录介质包括第一和第二介电层之间的高熔点记录层。在记录介质上记录信息的方法包括将激光束照射到记录介质上以在高熔点记录层和第一和第二介电层中引起反应和扩散。通过上述方法再现记录在这样的超分辨率近场记录介质上的信息的方法包括使用高熔点记录层和第一和第二介电层的结晶粒子作为散射源来产生等离子体，以再现信息，而不管使用的激光衍射极限。

4. 发明授权

US07651793B2 High density recording medium with super-resolution near-field structure manufactured using high-melting point metal oxide or silicon oxide mask layer 有权
标题翻译：使用高熔点金属氧化物或氧化硅掩模层制造的具有超分辨率近场结构的高密度记录介质
公开(公告)号：US07651793B2
公开(公告)日：2010-01-26
申请号：US10529044
申请日：2003-09-24
申请人： Joo-Ho Kim , Junji Tominaga
发明人： Joo-Ho Kim , Junji Tominaga
IPC分类号： G11B11/105
CPC分类号： B82Y10/00 , G11B7/24 , G11B7/258 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316
摘要： A high density recording medium with a super-resolution near-field structure including a mask layer comprising high melting point metal oxide or silicon oxide. A high density recording medium with a super-resolution near-field structure includes a sequential stack of a second dielectric layer, a recording layer, a protective layer, a mask layer, a first dielectric layer, and a polycarbonate layer, wherein the mask layer comprises high melting point metal oxide or silicon oxide to generate a near field by optically or thermally inducing physical changes in the crystalline structure and optical properties of the high melting point metal oxide or silicon oxide.
摘要翻译：一种具有包括高熔点金属氧化物或氧化硅的掩模层的超分辨率近场结构的高密度记录介质。具有超分辨率近场结构的高密度记录介质包括第二介电层，记录层，保护层，掩模层，第一介电层和聚碳酸酯层的顺序堆叠，其中掩模层包括高熔点金属氧化物或氧化硅，以通过光学或热诱导高熔点金属氧化物或氧化硅的晶体结构和光学性质的物理变化产生近场。

5. 发明申请

US20050207327A1 Recording method using reaction and diffusion, recording medium recorded on using the recording method, and recording/reproducing apparatus for the recording medium 审中-公开
标题翻译：使用反应和扩散的记录方法，使用记录方法记录的记录介质，以及记录介质的记录/再现装置
公开(公告)号：US20050207327A1
公开(公告)日：2005-09-22
申请号：US10509367
申请日：2003-03-28
申请人： Joo-Ho Kim , Junji Tominaga
发明人： Joo-Ho Kim , Junji Tominaga
IPC分类号： G11B7/0037 , G11B7/004 , G11B7/0045 , G11B7/24 , G11B7/243 , G11B7/257 , G11B7/26 , G11B11/105
CPC分类号： G11B7/00454 , B82Y10/00 , G11B7/24065 , G11B7/243 , G11B7/257 , G11B11/10504 , G11B11/10515 , G11B11/10528 , G11B11/10584 , G11B11/10593 , G11B11/10597
摘要： A phase change and/or magneto-optical recording method using laser induced reaction and diffraction in a recording layer and a dielectric layer of a recording medium involves changing absorption coefficients of optical constants of a recording layer and a dielectric layer of a recording medium by laser induced reaction and diffusion. The magneto-optical recording method involves changing the magnetization direction in a recording layer while the recording layer and a dielectric layer of a recording medium are irradiated with a laser inducing reaction and diffusion therein.
摘要翻译：在记录介质的记录层和电介质层中使用激光诱导反应和衍射的相变和/或磁光记录方法包括通过激光改变记录层和介质层的光学常数的吸收系数诱导反应和扩散。磁光记录方法包括改变记录层中的磁化方向，同时用记录介质层和记录介质的电介质层照射其中的激光引发反应和扩散。

6. 发明申请

US20050249065A1 Recording medium having high melting point recording layer, information recording method thereof, and information reproducing apparatus and method therefor 有权
标题翻译：具有高熔点记录层的记录介质，其信息记录方法及其信息再现装置及方法
公开(公告)号：US20050249065A1
公开(公告)日：2005-11-10
申请号：US10514422
申请日：2003-05-16
申请人： Joo-Ho Kim , Junji Tominaga
发明人： Joo-Ho Kim , Junji Tominaga
IPC分类号： B41M5/26 , G11B7/004 , G11B7/243 , G11B7/257 , G11B5/09
CPC分类号： B82Y10/00 , G11B7/24 , G11B7/243 , G11B7/257 , G11B7/2585 , G11B7/259 , G11B2007/24306 , Y10T428/21
摘要： A simple-structured recording medium without a mask layer and information recording and reproducing methods, which resolve thermal stability related problems arising during reproduction, the recording medium including a high melting point recording layer between first and second dielectric layers. The method of recording information on the recording medium involves irradiating a laser beam onto the recording medium to induce reaction and diffusion in the high melting point recording layer and the first and second dielectric layers. The method of reproducing information recorded on such a super-resolution near-field recording medium by the above method involves generating plasmon using crystalline particles of the high melting point recording layer and the first and second dielectric layers as a scatter source to reproduce information regardless of a diffraction limit of a laser used.
摘要翻译：具有掩模层的简单结构的记录介质和信息记录和再现方法，其解决在再现期间产生的热稳定性相关问题，记录介质包括第一和第二介电层之间的高熔点记录层。在记录介质上记录信息的方法包括将激光束照射到记录介质上以在高熔点记录层和第一和第二介电层中引起反应和扩散。通过上述方法再现记录在这样的超分辨率近场记录介质上的信息的方法包括使用高熔点记录层和第一和第二介电层的结晶粒子作为散射源来产生等离子体，以再现信息，而不管使用的激光衍射极限。

7. 发明申请

US20050196975A1 Method of manufacturing a compound semiconductor by heating a layered structure including rare earth transition metal 有权
公开(公告)号：US20050196975A1
公开(公告)日：2005-09-08
申请号：US11109389
申请日：2005-04-19
申请人： Joo-Ho Kim , Junji Tominaga
发明人： Joo-Ho Kim , Junji Tominaga
IPC分类号： C01B33/00 , H01L21/26 , H01L21/268 , H01L21/31 , H01L21/768 , H01L21/8242 , H01L21/8247 , H01L23/525 , H01L27/108 , H01L27/115 , H01L29/12 , H01L29/24 , H01L29/26 , H01L29/788 , H01L29/792
CPC分类号： H01L29/247 , H01L21/76888 , H01L23/5258 , H01L27/10873 , H01L29/263 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a compound semiconductor includes the steps of forming a layered structure of dielectric layers including oxygen or sulfur, and an inter layer formed between the dielectric layers, including rare earth transition metal that is highly reactive to oxygen and sulfur, and heating the layered structure. As a result of the chemical reaction and diffusion of elements, one can change a heated portion of the layered structure to a semiconductor or an insulator, depending on the temperature to which the portion is heated.

8. 发明申请

US20060234168A1 Pattern forming materials and pattern formation method using the materials 有权
标题翻译：图案形成材料和图案形成方法使用材料
公开(公告)号：US20060234168A1
公开(公告)日：2006-10-19
申请号：US10531897
申请日：2003-10-20
申请人： Joo-Ho Kim , Junji Tominaga
发明人： Joo-Ho Kim , Junji Tominaga
IPC分类号： G03C5/00
CPC分类号： G11B7/261 , B41M5/26 , B41M5/368 , B41M5/46 , B41M5/465
摘要： A pattern forming materials includes a thermal sensitive material layer formed on a target substrate, a first light-to-heat converting layer formed between the thermal sensitive material layer and the target substrate, and a second light-to-heat converting layer formed on a surface of the thermal sensitive material layer opposite to the first light-to-heat converting layer, the thermal sensitive material layer being interposed between the first and second light-to-heat converting layers. A higher aspect ratio fine pattern can be formed in the thermal sensitive material layer made of photoresist using heat generated in the first and second light-to-heat converting layers formed on both surfaces of the thermal sensitive material layer.
摘要翻译：图案形成材料包括形成在目标基板上的热敏材料层，形成在热敏材料层和目标基板之间的第一光热转换层和形成在热敏材料层上的第二光热转换层所述热敏材料层的表面与所述第一光热转换层相对，所述热敏材料层插入在所述第一和第二光热转换层之间。可以在形成在热敏材料层的两个表面上的第一和第二光热转换层中产生的热量的光致抗蚀剂材料层中形成更高的纵横比精细图案。

9. 发明申请

US20060147757A1 High density recording medium with super-resolution near-field structure manufactured using high-melting point metal oxide or silicon oxide mask layer 有权
标题翻译：使用高熔点金属氧化物或氧化硅掩模层制造的具有超分辨率近场结构的高密度记录介质
公开(公告)号：US20060147757A1
公开(公告)日：2006-07-06
申请号：US10529044
申请日：2003-09-24
申请人： Joo-Ho Kim , Junji Tominaga
发明人： Joo-Ho Kim , Junji Tominaga
IPC分类号： G11B5/66
CPC分类号： B82Y10/00 , G11B7/24 , G11B7/258 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316
摘要： A high density recording medium with a super-resolution near-field structure including a mask layer comprising high melting point metal oxide or silicon oxide. A high density recording medium with a super-resolution near-field structure includes a sequential stack of a second dielectric layer, a recording layer, a protective layer, a mask layer, a first dielectric layer, and a polycarbonate layer, wherein the mask layer comprises high melting point metal oxide or silicon oxide to generate a near field by optically or thermally inducing physical changes in the crystalline structure and optical properties of the high melting point metal oxide or silicon oxide.
摘要翻译：一种具有包括高熔点金属氧化物或氧化硅的掩模层的超分辨率近场结构的高密度记录介质。具有超分辨率近场结构的高密度记录介质包括第二介电层，记录层，保护层，掩模层，第一介电层和聚碳酸酯层的顺序堆叠，其中掩模层包括高熔点金属氧化物或氧化硅，以通过光学或热诱导高熔点金属氧化物或氧化硅的晶体结构和光学性质的物理变化产生近场。

10. 发明授权

US06893894B2 Method of manufacturing a compound semiconductor by heating a layered structure including rare earth transition metal 有权
标题翻译：通过加热含有稀土类过渡金属的层状结构来制造化合物半导体的方法
公开(公告)号：US06893894B2
公开(公告)日：2005-05-17
申请号：US10382070
申请日：2003-03-04
申请人： Joo-Ho Kim , Junji Tominaga
发明人： Joo-Ho Kim , Junji Tominaga
IPC分类号： C01B33/00 , H01L21/26 , H01L21/268 , H01L21/31 , H01L21/768 , H01L21/8242 , H01L21/8247 , H01L23/525 , H01L27/108 , H01L27/115 , H01L29/12 , H01L29/24 , H01L29/26 , H01L29/788 , H01L29/792 , H01L21/00
CPC分类号： H01L29/247 , H01L21/76888 , H01L23/5258 , H01L27/10873 , H01L29/263 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a compound semiconductor includes the steps of forming a layered structure of dielectric layers including oxygen or sulfur, and an inter layer formed between the dielectric layers, including rare earth transition metal that is highly reactive to oxygen and sulfur, and heating the layered structure. As a result of the chemical reaction and diffusion of elements, one can change a heated portion of the layered structure to a semiconductor or an insulator, depending on the temperature to which the portion is heated.
摘要翻译：制造化合物半导体的方法包括以下步骤：形成包括氧或硫的电介质层的层叠结构，以及形成在介电层之间的层间，包括对氧和硫具有高反应性的稀土过渡金属，并加热分层结构。作为元件的化学反应和扩散的结果，可以根据加热部分的温度，将层状结构的加热部分改变为半导体或绝缘体。

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