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1. 发明授权

US5462638A Selective etching of TiW for C4 fabrication 失效
标题翻译：选择性蚀刻TiW用于C4制造
公开(公告)号：US5462638A
公开(公告)日：1995-10-31
申请号：US260049
申请日：1994-06-15
申请人： Madhav Datta , Ravindra V. Shenoy
发明人： Madhav Datta , Ravindra V. Shenoy
IPC分类号： C23F1/26 , C23F1/44 , H01L21/28 , H01L21/306 , H01L21/3213 , H01L21/60 , H01L23/485 , H01L21/00 , B44C1/22 , C23F1/02
CPC分类号： H01L24/11 , C23F1/26 , C23F1/44 , H01L24/13 , H01L2224/13099 , H01L2224/13116 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/19043
摘要： A chemical etchant (and a method for forming the etchant) is disclosed for removing thin films of titanium-tungsten alloy in microelectronic chip fabrication. The alloy removed is preferably 10% Ti and 90% W, which is layered onto a substrate under chromium and copper seed layers for electrodeposition of C4 solder bumps. In this application the Ti--W etchant should not attack aluminum, chromium, copper, or lead-tin solders, and should dissolve Ti--W rapidly. The invention achieves this with a mixture of 30% by weight hydrogen peroxide and water, to which is added EDTA and potassium sulfate. The hydrogen peroxide etches Ti--W rapidly at temperatures between 40.degree. C. and 60.degree. C. EDTA forms a complex with tungsten to prevent plating of the Pb--Sn solder with W, and potassium sulfate forms a protective coating on the Pb--Sn solder to protect it from chemical attack.
摘要翻译：公开了用于在微电子芯片制造中去除钛 - 钨合金薄膜的化学腐蚀剂（和形成蚀刻剂的方法）。除去的合金优选为10％Ti和90％W，其在铬和铜种子层下层叠到基底上，用于电沉积C4焊料凸块。在这种应用中，Ti-W蚀刻剂不应该侵蚀铝，铬，铜或铅锡焊料，并应迅速溶解Ti-W。本发明通过30重量％的过氧化氢和水的混合物实现，向其中加入EDTA和硫酸钾。过氧化氢在40℃至60℃的温度下快速蚀刻Ti-W。EDTA与钨形成复合物，以防止用W镀Pb-Sn焊料，硫酸钾在Pb-Sn上形成保护涂层焊料保护它免受化学侵蚀。

2. 发明授权

US5759437A Etching of Ti-W for C4 rework 失效
标题翻译：蚀刻Ti-W用于C4返修
公开(公告)号：US5759437A
公开(公告)日：1998-06-02
申请号：US740569
申请日：1996-10-31
申请人： Madhav Datta , Thomas Safron Kanarsky , Gangadhara Swami Mathad , Ravindra V. Shenoy
发明人： Madhav Datta , Thomas Safron Kanarsky , Gangadhara Swami Mathad , Ravindra V. Shenoy
IPC分类号： C23F1/26 , H01L21/3213 , C09K13/00
CPC分类号： H01L21/32134 , C23F1/26
摘要： A chemical etchant for the removal of titanium-tungsten containing structures from the semiconductors and a method for removing the titanium-tungsten. The etchant comprising a solution of hydrogen peroxide, a salt of EDTA, and an acid, the acid capable of preventing the deposition of tin oxide. The method of removal comprises first obtaining a wafer containing titanium-tungsten. Second, immersing the wafer having titanium-tungsten thereon for a predetermined period of time in an etchant bath comprising a solution of hydrogen peroxide, a salt of EDTA and an acid, the acid capable of preventing the deposition of tin oxide. Third, removing the treated wafer and rinsing the treated wafer and lastly, drying the wafer.
摘要翻译：用于从半导体去除含钛 - 钨的结构的化学蚀刻剂和用于除去钛 - 钨的方法。包含过氧化氢，EDTA盐和酸的溶液的蚀刻剂是能够防止氧化锡沉积的酸。除去的方法包括首先获得含有钛 - 钨的晶片。其次，将包含钛 - 钨的晶片在包含过氧化氢，EDTA的盐和酸的蚀刻剂浴中浸渍预定时间，所述蚀刻液能够防止氧化锡沉积。第三，去除经处理的晶片并冲洗经处理的晶片，最后，干燥晶片。

3. 发明授权

US5445705A Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process 失效
公开(公告)号：US5445705A
公开(公告)日：1995-08-29
申请号：US269865
申请日：1994-06-30
申请人： Steven G. Barbee , Madhav Datta , Tony F. Heinz , Leping Li , Eugene H. Ratzlaff , Ravindra V. Shenoy
发明人： Steven G. Barbee , Madhav Datta , Tony F. Heinz , Leping Li , Eugene H. Ratzlaff , Ravindra V. Shenoy
IPC分类号： H01L21/66 , H01L21/306 , H01L21/3213
CPC分类号： H01L21/32135
摘要： A contactless method and apparatus for in-situ chemical etch monitoring of an etching process during etching of a workpiece with a wet chemical etchant are disclosed. The method comprises steps of providing a base member having a reference surface; releasably securing the workpiece to the base member; providing at least two sensors disposed on the base member to be proximate to but not in contact with the outer perimeter of the workpiece surface; and monitoring an electrical characteristic between said at least two sensors, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process.

4. 发明授权

US5567304A Elimination of island formation and contact resistance problems during electroetching of blanket or patterned thin metallic layers on insulating substrate 失效
标题翻译：在绝缘衬底上的毯子或图案化的薄金属层的电蚀刻期间消除岛形成和接触电阻问题
公开(公告)号：US5567304A
公开(公告)日：1996-10-22
申请号：US367550
申请日：1995-01-03
申请人： Madhav Datta , Lubomyr T. Romankiw , Ravindra V. Shenoy
发明人： Madhav Datta , Lubomyr T. Romankiw , Ravindra V. Shenoy
IPC分类号： B23H3/00 , B23H9/06 , C25F3/14 , H05K3/07 , H05K3/08 , B23H3/02 , B23H7/18
CPC分类号： C25F3/14 , B23H3/00 , B23H9/06 , H05K3/07 , H05K3/08
摘要： In through-mask electroetching of a metal film on top of an insulating substrate, the shape of the metal film being etched is a function of the mask opening, the spacing between the openings and the thickness of the mask. An analysis of the electric field around the mask and the metal film is used to determine conditions leading to the formation of islands of unetched metal films within the openings. The analysis is then used to design the mask pattern and eliminate these islands. The increase in the ratio of the mask thickness to the opening width for eliminating the islands also lowers the undercutting of the mask. Premature stoppage of the electroetching process arising from the isolation of the sample film from the contact is also addressed. The electrical contact to the sample is made at one end and a nozzle jet of electrolyte is slowly swept from the far end of the sample towards the electrical contact. The nozzle speed is matched with the metal removal rate and the electrical contact is exposed to the electrolyte at the end of the process.
摘要翻译：在绝缘基板顶部的金属膜的通孔掩模电蚀刻中，被蚀刻的金属膜的形状是掩模开口，开口间距和掩模厚度的函数。使用掩模和金属膜周围的电场的分析来确定导致在开口内形成未蚀刻金属膜岛的条件。然后分析用于设计掩模图案并消除这些岛。掩模厚度与用于消除岛的开口宽度的比率的增加也降低了掩模的底切。也解决了从接触中分离样品膜引起的电蚀过程的过早停止。与样品的电接触在一端制成，并且电解质的喷嘴射流从样品的远端缓慢地扫过电接点。喷嘴速度与金属去除速率相匹配，并且在过程结束时电接触暴露于电解质。

5. 发明授权

US5543032A Electroetching method and apparatus 失效
标题翻译：电蚀方法和装置
公开(公告)号：US5543032A
公开(公告)日：1996-08-06
申请号：US459760
申请日：1995-06-02
申请人： Madhav Datta , Ravindra V. Shenoy
发明人： Madhav Datta , Ravindra V. Shenoy
IPC分类号： C25F3/14 , H01L21/60 , C25F7/00
CPC分类号： C25F3/14 , H01L24/11 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14
摘要： A tool and process for electroetching metal films or layers on a substrate employs a linear electrode and a linear jet of electrolyte squirted from the electrode. The electrode is slowly scanned over the film by a drive mechanism. The current is preferably intermittent. In one embodiment a single wafer surface (substrate) is inverted and the jet is scanned underneath. In another embodiment wafers are held vertically on opposite sides of a holder and two linear electrodes, oriented horizontally and on opposite sides of the holder, are scanned vertically upward at a rate such that the metal layers are completely removed in one pass. The process is especially adapted for fabricating C4 solder balls with triple seed layers of Ti--W (titanium-tungsten alloy) on a substrate, phased Cr--Cu consisting of 50% chromium (Cr) and 50% copper (Cu), and substantially pure Cu. Solder alloys are through-mask electrodeposited on the Cu layer. The seed layers conduct the plating current. During etching the seed layers are removed between the solder bumps to isolate them. The phased Cr--Cu and Cu layers are removed by a single electroetching operation in aqueous potassium sulfate and glycerol with cell voltage set to dissolve the phased layer more quickly than the Cu, avoiding excessive solder bump undercutting in the copper layer. The cell voltage may be such that the solder bump is only slightly undercut so as to form a stepped base C4 structure upon reflowing. Ti--W is removed by a chemical process.
摘要翻译：用于在基板上电蚀金属膜或层的工具和方法采用线性电极和从电极喷射的电解质的线性射流。通过驱动机构将电极缓慢扫描在膜上。电流优选是间歇的。在一个实施例中，单个晶片表面（基板）被倒置并且在下面扫描射流。在另一个实施例中，晶片垂直地保持在保持器的相对侧上，并且水平定向并且在保持器的相对侧上的两个线性电极以一定速度被垂直向上扫描，使得金属层在一次通过中完全去除。该方法特别适用于在基体上制造具有Ti-W（钛 - 钨合金）三重种子层的C4焊球，由50％铬（Cr）和50％铜（Cu）组成的相位Cr-Cu，纯铜。焊接合金是电沉积在Cu层上的通孔掩模。种子层进行电镀电流。在蚀刻期间，在焊料凸块之间移除种子层以隔离它们。通过在硫酸钾水溶液和甘油中通过单次电蚀操作除去相位的Cr-Cu和Cu层，其电池电压设置为比Cu更快地溶解相位层，避免了铜层中过多的焊料凹凸。电池电压可以使得焊料凸块仅略微下切，以便在回流时形成阶梯式基底C4结构。 Ti-W通过化学工艺除去。

6. 发明授权

US5558957A Method for making a thin flexible primary battery for microelectronics applications 失效
标题翻译：制造用于微电子应用的薄柔性一次电池的方法
公开(公告)号：US5558957A
公开(公告)日：1996-09-24
申请号：US329347
申请日：1994-10-26
申请人： Madhav Datta , Ravindra V. Shenoy
发明人： Madhav Datta , Ravindra V. Shenoy
IPC分类号： H01M2/02 , H01M4/13 , H01M4/66 , H01M6/18 , H01M4/70
CPC分类号： G06K19/0702 , H01M2/021 , H01M4/13 , H01M4/661 , H01M6/181 , Y10T29/49114 , Y10T29/49115
摘要： A method is provided for making a flexible primary battery suitable for microelectronics applications, and more particularly, for use with self-contained self-powered portable devices (SSPD) such as RF-ID tags. The method generally employs photolithography and etching techniques to minimize the thicknesses of metal foils required in the structure of the battery, as well as packaging methods which yield a flexible and durable battery having a thickness of not more than about 0.5 millimeter, and preferably about 0.3 millimeter or less, and a relatively small size on the order of a few square centimeters in surface area.
摘要翻译：提供了一种用于制造适用于微电子应用的柔性一次电池的方法，更具体地，用于与自包含的自供电便携式设备（SSPD）如RF-ID标签一起使用。该方法通常使用光刻和蚀刻技术来最小化电池结构中所需的金属箔的厚度，以及产生厚度不大于约0.5毫米，优选约0.3的柔性耐用电池的封装方法毫米或更小，并且表面积的几平方厘米量级的相对较小的尺寸。

7. 发明授权

US5536388A Vertical electroetch tool nozzle and method 失效
标题翻译：立式电镀工具喷嘴及方法
公开(公告)号：US5536388A
公开(公告)日：1996-07-16
申请号：US460439
申请日：1995-06-02
申请人： Thomas E. Dinan , Kirk G. Berridge , Madhav Datta , Thomas S. Kanarsky , Michael B. Pike , Ravindra V. Shenoy
发明人： Thomas E. Dinan , Kirk G. Berridge , Madhav Datta , Thomas S. Kanarsky , Michael B. Pike , Ravindra V. Shenoy
IPC分类号： C25F7/00 , C25F3/14
CPC分类号： C25F7/00
摘要： A nozzle is provided for use in electroetching a vertically oriented workpiece, comprising a housing having a top, sides, and bottom for creating a flow of etching solution on the workpiece, and means for shaping the flow of etching solution into a moving channel to improve etch uniformity of the workpiece.
摘要翻译：提供一种用于对垂直取向的工件进行电蚀刻的喷嘴，包括具有顶部，侧面和底部的壳体，用于在工件上产生蚀刻溶液流，以及用于使蚀刻溶液流动成移动通道以改善蚀刻工件的均匀性。

8. 发明授权

US5620611A Method to improve uniformity and reduce excess undercuts during chemical etching in the manufacture of solder pads 失效
标题翻译：在制造焊盘的化学蚀刻期间改善均匀性并减少多余的底切的方法
公开(公告)号：US5620611A
公开(公告)日：1997-04-15
申请号：US659459
申请日：1996-06-06
申请人： Madhav Datta , Thomas S. Kanarsky , Michael B. Pike , Ravindra V. Shenoy
发明人： Madhav Datta , Thomas S. Kanarsky , Michael B. Pike , Ravindra V. Shenoy
IPC分类号： H01L21/60 , H01L23/48
CPC分类号： H01L24/11 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/14
摘要： Reduced undercutting of a titanium-tungsten layer in a ball limiting metallurgy (BLM) is achieved in the preparation of solder ball interconnect structures by removing metal oxide film which forms on the titanium-tungsten layer and etching the titanium-tungsten layer in different steps. Removing the metal oxide with an acid solution prior to etching the titanium-tungsten layer provides for a more uniform etch of the titanium-tungsten layer.
摘要翻译：通过去除在钛 - 钨层上形成的金属氧化物膜并以不同的步骤蚀刻钛 - 钨层，在制备焊球互连结构中实现了在极限极限冶金（BLM）中减少钛钨层的底切。在蚀刻钛 - 钨层之前用酸溶液去除金属氧化物提供对钛 - 钨层的更均匀的蚀刻。

9. 发明授权

US5456788A Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process 失效
标题翻译：用于无接触实时原位监测化学蚀刻工艺的方法和装置
公开(公告)号：US5456788A
公开(公告)日：1995-10-10
申请号：US414404
申请日：1995-03-31
申请人： Steven G. Barbee , Madhav Datta , Tony F. Heinz , Leping Li , Eugene H. Ratzlaff , Ravindra V. Shenoy
发明人： Steven G. Barbee , Madhav Datta , Tony F. Heinz , Leping Li , Eugene H. Ratzlaff , Ravindra V. Shenoy
IPC分类号： H01L21/66 , H01L21/306 , H01L21/3213 , C23F1/02
CPC分类号： H01L21/32135
摘要： A contactless method and apparatus for in-situ chemical etch monitoring of an etching process during etching of a workpiece with a wet chemical etchant are disclosed. The method comprises steps of providing a base member having a reference surface; releasably securing the workpiece to the base member; providing at least two sensors disposed on the base member to be proximate to but not in contact with the outer perimeter of the workpiece surface; and monitoring an electrical characteristic between said at least two sensors, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process.
摘要翻译：公开了一种用于在用湿化学蚀刻剂蚀刻工件期间蚀刻工艺的原位化学蚀刻监测的非接触式方法和装置。该方法包括提供具有参考表面的基底构件的步骤; 将工件可释放地固定到基座构件上; 提供设置在所述基座构件上的至少两个传感器以接近但不与所述工件表面的外周接触; 以及监测所述至少两个传感器之间的电特性，其中电特性的规定变化表示蚀刻处理的规定条件。

10. 发明授权

US08952550B2 Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same 有权
公开(公告)号：US08952550B2
公开(公告)日：2015-02-10
申请号：US12655975
申请日：2010-01-12
申请人： Madhav Datta , Dave Emory , Subhash M. Joshi , Susanne Menezes , Doowon Suh
发明人： Madhav Datta , Dave Emory , Subhash M. Joshi , Susanne Menezes , Doowon Suh
IPC分类号： H01L23/48
CPC分类号： H01L24/11 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05572 , H01L2224/05647 , H01L2224/10126 , H01L2224/11009 , H01L2224/1147 , H01L2224/1148 , H01L2224/11849 , H01L2224/11901 , H01L2224/11912 , H01L2224/13023 , H01L2224/13099 , H01L2224/13111 , H01L2224/13116 , H01L2224/13147 , H01L2224/13166 , H01L2924/0002 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/0104 , H01L2924/01042 , H01L2924/01046 , H01L2924/0105 , H01L2924/01057 , H01L2924/01058 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2224/05552
摘要： The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

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