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    • 1. 发明申请
    • ELECTROSTATIC CHUCK WITH REDUCED ARCING
    • 具有减少弧光的静电卡盘
    • US20110157760A1
    • 2011-06-30
    • US12884967
    • 2010-09-17
    • MICHAEL D. WILLWERTHDAVID PALAGASHVILIDOUGLAS A. BUCHBERGER, JR.MICHAEL G. CHAFIN
    • MICHAEL D. WILLWERTHDAVID PALAGASHVILIDOUGLAS A. BUCHBERGER, JR.MICHAEL G. CHAFIN
    • H01L21/687
    • H01L21/6833Y10T279/23
    • Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck may include a body having a notched upper peripheral edge, defined by a first surface perpendicular to a body sidewall and a stepped second surface disposed between the first surface and a body upper surface, and a plurality of holes disposed through the body along the first surface; a plurality of fasteners disposed through the plurality of holes to couple the body to a base disposed beneath the body; a dielectric member disposed above the body upper surface to electrostatically retain a substrate; an insulator ring disposed about the body within the notched upper peripheral edge and having a stepped inner sidewall that mates with the stepped second surface to define a non-linear interface therebetween; and an edge ring disposed over the insulator ring, the non-linear interface limiting arcing between the edge ring and the fastener.
    • 本文提供了静电卡盘的实施例。 在一些实施例中,静电吸盘可以包括具有切口的上周边边缘的主体,该顶部边缘由垂直于主体侧壁的第一表面和设置在第一表面和主体上表面之间的阶梯状第二表面限定, 沿着第一面穿过身体; 多个紧固件,其布置成穿过所述多个孔,以将所述主体连接到设置在所述主体下方的底座; 设置在所述主体上表面上方的电介质部件,以静电保持基板; 绝缘体环,其围绕所述主体设置在所述凹口的上周边边缘内并且具有与所述阶梯状的第二表面配合以形成其间的非线性界面的阶梯状内侧壁; 以及设置在所述绝缘体环上的边缘环,所述非线性界面限制所述边缘环和所述紧固件之间的电弧。
    • 2. 发明申请
    • ELECTROSTATIC CHUCK ASSEMBLY
    • 静电块组件
    • US20090097184A1
    • 2009-04-16
    • US11871807
    • 2007-10-12
    • DOUGLAS A. BUCHBERGER, JR.Paul Brillhart
    • DOUGLAS A. BUCHBERGER, JR.Paul Brillhart
    • H05F3/00
    • H01L21/6831H01L21/67109
    • The present invention generally comprises an electrostatic chuck base, an electrostatic chuck assembly, and a puck for the electrostatic chuck assembly. Precisely etching a substrate within a plasma chamber may be a challenge because the plasma within the chamber may cause the temperature across the substrate to be non-uniform. A temperature gradient may exist across the substrate such that the edge of the substrate is at a different temperature compared to the center of the substrate. When the temperature of the substrate is not uniform, features may not be uniformly etched into the various layers of the structure disposed above the substrate. A dual zone electrostatic chuck assembly may compensate for temperature gradients across a substrate surface.
    • 本发明通常包括静电卡盘基座,静电卡盘组件和用于静电卡盘组件的圆盘。 精确蚀刻等离子体室内的衬底可能是一个挑战,因为室内的等离子体可能导致衬底上的温度不均匀。 衬底上可能存在温度梯度,使得衬底的边缘与衬底的中心相比处于不同的温度。 当衬底的温度不均匀时,可能不能将特征均匀地蚀刻到设置在衬底上方的结构的各个层中。 双区域静电吸盘组件可以补偿穿过衬底表面的温度梯度。
    • 3. 发明申请
    • SUBSTRATE SUPPORT WITH SYMMETRICAL FEED STRUCTURE
    • 基板支撑与对称馈电结构
    • US20120097332A1
    • 2012-04-26
    • US12910547
    • 2010-10-22
    • XING LINDOUGLAS A. BUCHBERGER, JR.XIAOPING ZHOUANDREW NGUYENANCHEL SHEYNER
    • XING LINDOUGLAS A. BUCHBERGER, JR.XIAOPING ZHOUANDREW NGUYENANCHEL SHEYNER
    • C23F1/08
    • H01L21/67069H01J37/32532H01J37/32577H01J37/32715H01J37/32724H01L21/6831
    • Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.
    • 本文公开了用于处理衬底的装置。 在一些实施例中,衬底支撑件可以包括具有用于支撑衬底的支撑表面的衬底支撑件,衬底支撑件具有中心轴线; 设置在所述基板支撑件内的第一电极,用于当设置在所述支撑表面上时向基板提供RF功率; 内部导体,其围绕第一电极的与支撑表面相对的表面的中心耦合到第一电极,其中内部导体是管状的,并且从第一电极沿着远离支撑表面的方向平行于中心轴并围绕中心轴线延伸 的基板支撑; 设置在内部导体周围的外部导体; 以及设置在所述内部和外部导体之间的外部电介质层,所述外部电介质层将所述外部导体与所述内部导体电隔离。 外部导体可以耦合到电气接地。
    • 5. 发明申请
    • SUBSTRATE SUPPORT WITH SYMMETRICAL FEED STRUCTURE
    • 基板支撑与对称馈电结构
    • US20150371877A1
    • 2015-12-24
    • US14840204
    • 2015-08-31
    • XING LINDOUGLAS A. BUCHBERGER, JR.XIAOPING ZHOUANDREW NGUYENANCHEL SHEYNER
    • XING LINDOUGLAS A. BUCHBERGER, JR.XIAOPING ZHOUANDREW NGUYENANCHEL SHEYNER
    • H01L21/67H01J37/32
    • H01L21/67069H01J37/32532H01J37/32577H01J37/32715H01J37/32724H01L21/6831
    • Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.
    • 本文公开了用于处理衬底的装置。 在一些实施例中,衬底支撑件可以包括具有用于支撑衬底的支撑表面的衬底支撑件,衬底支撑件具有中心轴线; 设置在所述基板支撑件内的第一电极,用于当设置在所述支撑表面上时向基板提供RF功率; 内部导体,其围绕第一电极的与支撑表面相对的表面的中心耦合到第一电极,其中内部导体是管状的,并且从第一电极沿着远离支撑表面的方向平行于中心轴并围绕中心轴线延伸 的基板支撑; 设置在内部导体周围的外部导体; 以及设置在所述内部和外部导体之间的外部电介质层,所述外部电介质层将所述外部导体与所述内部导体电隔离。 外部导体可以耦合到电气接地。