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1. 发明申请

US20110180243A1 APPARATUS FOR CONTROLLING TEMPERATURE UNIFORMITY OF A SUBSTRATE 有权
标题翻译：用于控制基板温度均匀性的装置
公开(公告)号：US20110180243A1
公开(公告)日：2011-07-28
申请号：US12886255
申请日：2010-09-20
申请人： KALLOL BERA , XIAOPING ZHOU , DOUGLAS A. BUCHBERGER, JR. , ANDREW NGUYEN , HAMID TAVASSOLI , SURAJIT KUMAR , SHAHID RAUF
发明人： KALLOL BERA , XIAOPING ZHOU , DOUGLAS A. BUCHBERGER, JR. , ANDREW NGUYEN , HAMID TAVASSOLI , SURAJIT KUMAR , SHAHID RAUF
IPC分类号： F28F3/12
CPC分类号： F28F3/12 , F28F2013/001
摘要： Apparatus for controlling thermal uniformity of a substrate is provided herein. In some embodiments, the thermal uniformity of the substrate may be controlled to be more uniform. In some embodiments, the thermal uniformity of the substrate may be controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling thermal uniformity of a substrate may include a substrate support having a support surface to support a substrate thereon; and a plurality of flow paths having a substantially equivalent fluid conductance disposed within the substrate support to flow a heat transfer fluid beneath the support surface.
摘要翻译：本文提供了用于控制基板的热均匀性的装置。在一些实施例中，可以将衬底的热均匀性控制得更均匀。在一些实施例中，可以将所述衬底的热均匀性控制为以所需图案不均匀。在一些实施例中，用于控制衬底的热均匀性的装置可以包括具有用于在其上支撑衬底的支撑表面的衬底支撑件; 以及多个流动路径，其具有设置在所述基板支撑件内的基本相当的流体电导，以使传热流体在所述支撑表面下方流动。

2. 发明申请

US20130008604A1 METHOD AND APPARATUS FOR ENHANCING FLOW UNIFORMITY IN A PROCESS CHAMBER 审中-公开
公开(公告)号：US20130008604A1
公开(公告)日：2013-01-10
申请号：US13613941
申请日：2012-09-13
申请人： KALLOL BERA , JAMES D. CARDUCCI , AJIT BALAKRISHNA , SHAHID RAUF , KENNETH S. COLLINS , ANDREW NGUYEN , HAMID NOORBAKHSH
发明人： KALLOL BERA , JAMES D. CARDUCCI , AJIT BALAKRISHNA , SHAHID RAUF , KENNETH S. COLLINS , ANDREW NGUYEN , HAMID NOORBAKHSH
IPC分类号： H01L21/306
CPC分类号： H01J37/32834 , C23C16/4412 , H01L21/67017 , H01L21/67167 , H01L21/6719
摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having an inner volume and an exhaust system coupled thereto, wherein the exhaust system includes a plurality of first conduits, each first conduit having an inlet adapted to receive exhaust from the inner volume of the process chamber. A pumping plenum is coupled to each of the plurality of first conduits. The pumping plenum has a pumping port adapted to pump the exhaust from the chamber. The conductance between each inlet of the plurality of first conduits and the pumping port is substantially equivalent.

3. 发明申请

US20090230089A1 ELECTRICAL CONTROL OF PLASMA UNIFORMITY USING EXTERNAL CIRCUIT 审中-公开
标题翻译：使用外部电路的等离子体均匀性的电气控制
公开(公告)号：US20090230089A1
公开(公告)日：2009-09-17
申请号：US12047492
申请日：2008-03-13
申请人： KALLOL BERA , SHAHID RAUF , AJIT BALAKRISHNA , KENNETH S. COLLINS , KARTIK RAMASWAMY , HIROJI HANAWA
发明人： KALLOL BERA , SHAHID RAUF , AJIT BALAKRISHNA , KENNETH S. COLLINS , KARTIK RAMASWAMY , HIROJI HANAWA
IPC分类号： B01J19/08 , C23F1/00
CPC分类号： H01J37/32174 , H01J37/32009 , H01J37/32045 , H01J37/32091
摘要： A method and apparatus for controlling plasma uniformity is disclosed. When etching a substrate, a non-uniform plasma may lead to uneven etching of the substrate. Impedance circuits may alleviate the uneven plasma to permit more uniform etching. The impedance circuits may be disposed between the chamber wall and ground, the showerhead and ground, and the cathode can and ground. The impedance circuits may comprise one or more of an inductor and a capacitor. The inductance of the inductor and the capacitance of the capacitor may be predetermined to ensure the plasma is uniform. Additionally, the inductance and capacitance may be adjusted during processing or between processing steps to suit the needs of the particular process.
摘要翻译：公开了一种用于控制等离子体均匀性的方法和装置。当蚀刻基板时，不均匀的等离子体可能导致基板的不均匀蚀刻。阻抗电路可以减轻不均匀的等离子体以允许更均匀的蚀刻。阻抗电路可以设置在室壁和地面之间，淋浴头和地面以及阴极罐和地面之间。阻抗电路可以包括电感器和电容器中的一个或多个。电感器的电感和电容器的电容可以被预先确定，以确保等离子体是均匀的。此外，可以在处理期间或在处理步骤之间调整电感和电容以适应特定工艺的需要。

4. 发明申请

US20110097901A1 DUAL MODE INDUCTIVELY COUPLED PLASMA REACTOR WITH ADJUSTABLE PHASE COIL ASSEMBLY 审中-公开
标题翻译：双模感应耦合等离子体反应器，可调节相线圈组件
公开(公告)号：US20110097901A1
公开(公告)日：2011-04-28
申请号：US12821636
申请日：2010-06-23
申请人： SAMER BANNA , VALENTIN N. TODOROW , KENNETH S. COLLINS , ANDREW NGUYEN , MARTIN JEFF SALINAS , ZHIGANG CHEN , ANKUR AGARWAL , ANNIRUDDHA PAL , TSE-CHIANG WANG , SHAHID RAUF
发明人： SAMER BANNA , VALENTIN N. TODOROW , KENNETH S. COLLINS , ANDREW NGUYEN , MARTIN JEFF SALINAS , ZHIGANG CHEN , ANKUR AGARWAL , ANNIRUDDHA PAL , TSE-CHIANG WANG , SHAHID RAUF
IPC分类号： H01L21/465 , H01L21/46
CPC分类号： H01J37/32165 , H01J37/321 , H01J37/3211 , H01J37/32174
摘要： Embodiments of dual mode inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a dual mode inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes a plurality of coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, a phase controller for adjusting the relative phase of the RF current applied to each coil in the plurality of coils, and an RF generator coupled to the phase controller and the plurality of coils.
摘要翻译：本文提供了双模电感耦合等离子体反应器的实施例及其使用方法。在一些实施例中，双模感应耦合等离子体处理系统可以包括具有电介质盖和设置在电介质盖上方的等离子体源组件的处理室。等离子体源组件包括多个线圈，其被配置为将RF能量感应耦合到处理室中以在其中形成和维持等离子体;相位控制器，用于调节施加到多个线圈中的每个线圈的RF电流的相对相位;以及耦合到所述相位控制器和所述多个线圈的RF发生器。

5. 发明申请

US20110094994A1 INDUCTIVELY COUPLED PLASMA APPARATUS 审中-公开
标题翻译：电感耦合等离子体装置
公开(公告)号：US20110094994A1
公开(公告)日：2011-04-28
申请号：US12821609
申请日：2010-06-23
申请人： VALENTIN N. TODOROW , SAMER BANNA , ANKUR AGARWAL , ZHIGANG CHEN , TSE-CHIANG WANG , ANDREW NGUYEN , MARTIN JEFF SALINAS , SHAHID RAUF
发明人： VALENTIN N. TODOROW , SAMER BANNA , ANKUR AGARWAL , ZHIGANG CHEN , TSE-CHIANG WANG , ANDREW NGUYEN , MARTIN JEFF SALINAS , SHAHID RAUF
IPC分类号： C23F1/08 , C23F1/00
CPC分类号： H01J37/321 , B44C1/227 , C23C16/505 , H01J37/32165 , H01J37/3244
摘要： Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.
摘要翻译：本文提供了等离子体处理的方法和装置。在一些实施例中，等离子体处理装置包括具有内部处理量的处理室; 设置在处理室附近的将RF能量耦合到处理容积中的第一RF线圈; 以及设置在所述处理室附近以将RF能量耦合到所述处理容积中的第二RF线圈，所述第二RF线圈相对于所述第一RF线圈同轴设置，其中所述第一和第二RF线圈被配置为使得流过所述第一RF线圈的RF电流 RF线圈与RF电流流过RF第二线圈不同相。

6. 发明申请

US20120273341A1 METHODS AND APPARATUS FOR CONTROLLING PLASMA IN A PROCESS CHAMBER 有权
标题翻译：用于控制过程室中等离子体的方法和装置
公开(公告)号：US20120273341A1
公开(公告)日：2012-11-01
申请号：US13442478
申请日：2012-04-09
申请人： ANKUR AGARWAL , AJIT BALAKRISHNA , SHAHID RAUF
发明人： ANKUR AGARWAL , AJIT BALAKRISHNA , SHAHID RAUF
IPC分类号： H05H1/24 , B44C1/22
CPC分类号： H05H1/46 , H01J37/32082 , H01J37/32137 , H01J37/32165 , H05H2001/4682
摘要： Methods and apparatus for controlling a plasma are provided herein. In some embodiments, a method may include supplying a first RF signal having a first frequency and a first period from an RF power source to a first electrode, wherein the first period is a first integer number of first cycles at the first frequency; supplying a second RF signal having a second frequency and a second period from the RF power source to the first electrode, wherein the second period is a second integer number of second cycles at the second frequency and wherein a first multiplicative product of the first frequency and the first integer number is equal to a second multiplicative product of the second frequency and the second integer number; and controlling the phase between the first and second periods to control an ion energy distribution of the plasma formed in a process chamber.
摘要翻译：本文提供了用于控制等离子体的方法和装置。在一些实施例中，一种方法可以包括从RF功率源向第一电极提供具有第一频率和第一周期的第一RF信号，其中第一周期是第一频率的第一整数个第一周期; 提供从RF电源到第一电极的具有第二频率和第二周期的第二RF信号，其中第二周期是第二频率的第二整数倍的第二周期，并且其中第一频率和第二频率的第一乘法乘积第一整数等于第二频率和第二整数的第二乘法乘积; 以及控制第一和第二周期之间的相位，以控制在处理室中形成的等离子体的离子能量分布。

7. 发明申请

US20110031216A1 SYNCHRONIZED RADIO FREQUENCY PULSING FOR PLASMA ETCHING 有权
标题翻译：用于等离子体蚀刻的同步无线电频率脉冲
公开(公告)号：US20110031216A1
公开(公告)日：2011-02-10
申请号：US12851606
申请日：2010-08-06
申请人： BRYAN LIAO , KATSUMASA KAWASAKI , YASHASWINI PATTAR , SERGIO FUKUDA SHOJI , DUY D. NGUYEN , KARTIK RAMASWAMY , ANKUR AGARWAL , PHILLIP STOUT , SHAHID RAUF
发明人： BRYAN LIAO , KATSUMASA KAWASAKI , YASHASWINI PATTAR , SERGIO FUKUDA SHOJI , DUY D. NGUYEN , KARTIK RAMASWAMY , ANKUR AGARWAL , PHILLIP STOUT , SHAHID RAUF
IPC分类号： C23F1/00
CPC分类号： C23F1/00 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01L21/31116
摘要： Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.
摘要翻译：本文提供了处理基板的方法。在一些实施例中，蚀刻介电层的方法包括通过脉冲具有第一占空比的第一RF源信号来产生等离子体; 向所述等离子体施加具有第二占空比的第二RF偏置信号; 向所述等离子体施加具有第三占空比的第三RF偏置信号，其中所述第一，第二和第三信号被同步; 调整所述第一RF源信号和所述第二或第三RF偏置信号中的至少一个之间的相位差，以控制所述等离子体中的等离子体或电荷积聚中的等离子体离子密度不均匀性中的至少一个; 并用等离子体蚀刻电介质层。

8. 发明申请

US20120097870A1 APPARATUS FOR FORMING A MAGNETIC FIELD AND METHODS OF USE THEREOF 有权
标题翻译：用于形成磁场的装置及其使用方法
公开(公告)号：US20120097870A1
公开(公告)日：2012-04-26
申请号：US13097800
申请日：2011-04-29
申请人： GARY LERAY , SHAHID RAUF , VALENTIN N. TODOROW
发明人： GARY LERAY , SHAHID RAUF , VALENTIN N. TODOROW
IPC分类号： G21K1/093 , H05H1/04 , C23F1/08
CPC分类号： H01J37/321 , H01J37/32669
摘要： Apparatus for forming a magnetic field and methods of use thereof are provided herein. In some embodiments, a plurality of coils having substantially similar dimensions disposed about a process chamber in a symmetric pattern centered about a central axis of the process chamber, wherein the plurality of coils are configured to produce a magnetic field having a plurality of magnetic field lines that are substantially planar and substantially parallel. In some embodiments, the plurality of coils comprises eight coils disposed about the process chamber, wherein each of the eight coils is offset by an angle of about 45 degrees from respective adjacent coils of the eight coils.
摘要翻译：本文提供了形成磁场的装置及其使用方法。在一些实施例中，具有基本相似的尺寸的多个线圈以围绕处理室的中心轴线为中心的对称图案围绕处理室布置，其中多个线圈被配置为产生具有多个磁场线的磁场其基本上是平面的并且基本上平行。在一些实施例中，多个线圈包括围绕处理室布置的八个线圈，其中八个线圈中的每一个与八个线圈的相应相邻线圈相距大约45度的角度偏移。

9. 发明申请

US20110094683A1 RF FEED STRUCTURE FOR PLASMA PROCESSING 审中-公开
标题翻译：用于等离子体处理的射频馈送结构
公开(公告)号：US20110094683A1
公开(公告)日：2011-04-28
申请号：US12821626
申请日：2010-06-23
申请人： ZHIGANG CHEN , SHAHID RAUF , KENNETH S. COLLINS , MARTIN JEFF SALINAS , SAMER BANNA , VALENTIN N. TODOROW
发明人： ZHIGANG CHEN , SHAHID RAUF , KENNETH S. COLLINS , MARTIN JEFF SALINAS , SAMER BANNA , VALENTIN N. TODOROW
IPC分类号： H05H1/24 , H01P5/12
CPC分类号： H05H1/46 , H01J37/321 , H01J37/3211 , H01J37/32174
摘要： Apparatus for plasma processing are provided. In some embodiments, an RF feed structure includes a first RF feed to couple RF power to a plurality of symmetrically arranged stacked first RF coil elements; a second RF feed coaxially disposed about the first RF feed and electrically insulated therefrom, the second RF feed to couple RF power to a plurality of symmetrically arranged stacked second RF coil elements coaxially disposed with respect to the first RF coil elements. In some embodiments, a plasma processing apparatus includes a first RF coil; a second RF coil coaxially disposed with respect to the first RF coil; a first RF feed coupled to the first RF coil to provide RF power thereto; and a second RF feed coaxially disposed with respect to the first RF feed and electrically insulated therefrom, the second RF feed coupled to the second RF coil to provide RF power thereto.
摘要翻译：提供等离子体处理装置。在一些实施例中，RF馈送结构包括用于将RF功率耦合到多个对称布置的堆叠的第一RF线圈元件的第一RF馈送; 第二RF馈送，其围绕第一RF馈电同轴设置并与其电绝缘，第二RF馈送将RF功率耦合到相对于第一RF线圈元件同轴设置的多个对称布置的堆叠的第二RF线圈元件。在一些实施例中，等离子体处理装置包括第一RF线圈; 相对于所述第一RF线圈同轴设置的第二RF线圈; 耦合到所述第一RF线圈以向其提供RF功率的第一RF馈送; 以及第二RF馈电，其相对于所述第一RF馈电同轴设置并与其电绝缘，所述第二RF馈电耦合到所述第二RF线圈以向其提供RF功率。

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