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1. 发明授权

US09617142B1 MEMS grid for manipulating structural parameters of MEMS devices 有权
公开(公告)号：US09617142B1
公开(公告)日：2017-04-11
申请号：US14872123
申请日：2015-09-30
申请人： MEMS DRIVE, INC.
发明人： Roman Gutierrez , Tony Tang , Xiaolei Liu , Guiqin Wang , Matthew Ng
IPC分类号： B81B7/00 , B81B7/02 , B81C1/00 , H01L23/00 , H01L23/31
CPC分类号： H01L21/76816 , B81B3/0045 , B81B7/0029 , B81B2203/0353 , B81C1/00674 , B81C1/00682 , B81C2201/0112 , B81C2201/0135 , H01L21/768 , H01L21/76898 , H01L23/485 , H01L2924/00 , H01L2924/00014 , H01L2924/0002 , H01L2924/1461 , H01L2924/181
摘要： A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

2. 发明授权

US09426362B2 Three-axis OIS for super-resolution imaging 有权
标题翻译：三轴OIS用于超分辨率成像
公开(公告)号：US09426362B2
公开(公告)日：2016-08-23
申请号：US14599380
申请日：2015-01-16
申请人： MEMS DRIVE, INC.
发明人： Tony Tang , Roman Gutierrez
IPC分类号： H04N5/228 , G06K9/40 , H04N5/232 , G02B26/08 , H04N5/225
CPC分类号： H04N5/23232 , G02B26/0875 , G02B27/646 , H04N5/2253 , H04N5/2257 , H04N5/23258 , H04N5/23287 , H04N5/349
摘要： Systems and methods are provided for super-resolution imaging using 3-axis OIS. A super-resolution image may be created by enabling optical image stabilization (OIS) in three axes using an OIS system on a camera of an image capturing device; capturing an image of a scene using an image sensor of the camera; shifting the image on the image sensor by a predetermined subpixel amount; capturing the subpixel shifted image; and constructing a super-resolution image of the scene using the image and the subpixel shifted image. In one particular implementation, a position sensor may measure a positional drift of the image sensor after capturing the image. Using this measured positional drift, a time sufficient to shift the image sensor by a predetermined subpixel amount may be determined. The OIS may subsequently be disabled in one or two axes for the determined time.
摘要翻译：提供了使用3轴OIS的超分辨率成像的系统和方法。可以通过使用图像捕获装置的相机上的OIS系统在三个轴上实现光学图像稳定（OIS）来创建超分辨率图像; 使用相机的图像传感器捕获场景的图像; 将图像传感器上的图像移动预定的子像素量; 捕获子像素位移图像; 以及使用图像和子像素位移图像构建场景的超分辨率图像。在一个具体实现中，位置传感器可以在捕获图像之后测量图像传感器的位置漂移。使用该测量的位置漂移，可以确定足以将图像传感器移动预定子像素量的时间。随后可以在一个或两个轴上禁用OIS确定的时间。

3. 发明授权

US10160641B2 Simplified MEMS device fabrication process 有权
公开(公告)号：US10160641B2
公开(公告)日：2018-12-25
申请号：US15468682
申请日：2017-03-24
申请人： MEMS DRIVE, INC.
发明人： Roman Gutierrez , Tony Tang , Xiaolei Liu , Matthew Ng , Guiqin Wang
IPC分类号： H01L21/00 , B81C1/00 , B81C99/00
摘要： A simplified MEMS fabrication process and MEMS device is provided that allows for cheaper and lighter-weight MEMS devices to be fabricated. The process comprises etching a plurality of holes or other feature patterns into a MEMS device, and then etching away the underlying wafer such that, after the etching process, the MEMS device is the required thickness and the individual die are separated, avoiding the extra steps of wafer thinning and die dicing. By etching trenches into the substrate wafer and filling them with a MEMS base material, sophisticated taller MEMS devices with larger force may be made.

4. 发明授权

US09630836B2 Simplified MEMS device fabrication process 有权
公开(公告)号：US09630836B2
公开(公告)日：2017-04-25
申请号：US14872094
申请日：2015-09-30
申请人： MEMS DRIVE, INC.
发明人： Roman Gutierrez , Tony Tang , Xiaolei Liu , Matthew Ng , Guiqin Wang
IPC分类号： H01L21/00 , B81C1/00
CPC分类号： B81C1/00476 , B81B2201/033 , B81C1/00619 , B81C99/0095 , B81C2201/0132 , B81C2201/056
摘要： A simplified MEMS fabrication process and MEMS device is provided that allows for cheaper and lighter-weight MEMS devices to be fabricated. The process comprises etching a plurality of holes or other feature patterns into a MEMS device, and then etching away the underlying wafer such that, after the etching process, the MEMS device is the required thickness and the individual die are separated, avoiding the extra steps of wafer thinning and die dicing. By etching trenches into the substrate wafer and filling them with a MEMS base material, sophisticated taller MEMS devices with larger force may be made.

5. 发明授权

US10043704B2 MEMS grid for manipulating structural parameters of MEMS devices 有权
公开(公告)号：US10043704B2
公开(公告)日：2018-08-07
申请号：US15442085
申请日：2017-02-24
申请人： MEMS Drive, Inc.
发明人： Roman Gutierrez , Tony Tang , Xiaolei Liu , Guiqin Wang , Matthew Ng
IPC分类号： B81B7/00 , B81B7/02 , B81C1/00 , H01L23/00 , H01L23/31 , H01L21/768 , H01L23/485
摘要： A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

6. 发明申请

US20170197825A1 SIMPLIFIED MEMS DEVICE FABRICATION PROCESS 审中-公开
公开(公告)号：US20170197825A1
公开(公告)日：2017-07-13
申请号：US15468682
申请日：2017-03-24
申请人： MEMS DRIVE, INC.
发明人： Roman Gutierrez , Tony Tang , Xiaolei Liu , Matthew Ng , Guiqin Wang
IPC分类号： B81C1/00
CPC分类号： B81C1/00476 , B81B2201/033 , B81C1/00619 , B81C99/0095 , B81C2201/0132 , B81C2201/056
摘要： A simplified MEMS fabrication process and MEMS device is provided that allows for cheaper and lighter-weight MEMS devices to be fabricated. The process comprises etching a plurality of holes or other feature patterns into a MEMS device, and then etching away the underlying wafer such that, after the etching process, the MEMS device is the required thickness and the individual die are separated, avoiding the extra steps of wafer thinning and die dicing. By etching trenches into the substrate wafer and filling them with a MEMS base material, sophisticated taller MEMS devices with larger force may be made.

7. 发明申请

US20170170059A1 MEMS GRID FOR MANIPULATING STRUCTURAL PARAMETERS OF MEMS DEVICES 审中-公开
公开(公告)号：US20170170059A1
公开(公告)日：2017-06-15
申请号：US15442085
申请日：2017-02-24
申请人： MEMS Drive, Inc.
发明人： Roman Gutierrez , Tony Tang , Xiaolei Liu , Guiqin Wang , Matthew NG
IPC分类号： H01L21/768 , H01L23/485
CPC分类号： H01L21/76816 , B81B3/0045 , B81B7/0029 , B81B2203/0353 , B81C1/00674 , B81C1/00682 , B81C2201/0112 , B81C2201/0135 , H01L21/768 , H01L21/76898 , H01L23/485 , H01L2924/00 , H01L2924/00014 , H01L2924/0002 , H01L2924/1461 , H01L2924/181
摘要： A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

8. 发明授权

US10199262B2 MEMS grid for manipulating structural parameters of MEMS devices 有权
公开(公告)号：US10199262B2
公开(公告)日：2019-02-05
申请号：US15441887
申请日：2017-02-24
申请人： MEMS Drive, Inc.
发明人： Roman Gutierrez , Tony Tang , Xiaolei Liu , Guiqin Wang , Matthew Ng
IPC分类号： B81B7/00 , B81B7/02 , B81C1/00 , H01L23/00 , H01L23/31 , H01L21/768 , H01L23/485 , B81B3/00
摘要： A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

9. 发明申请

US20170320724A1 MEMS GRID FOR MANIPULATING STRUCTURAL PARAMETERS OF MEMS DEVICES 审中-公开
公开(公告)号：US20170320724A1
公开(公告)日：2017-11-09
申请号：US15441887
申请日：2017-02-24
申请人： MEMS Drive, Inc.
发明人： Roman Gutierrez , Tony Tang , Xiaolei Liu , Guiqin Wang , Matthew NG
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： H01L21/76816 , B81B3/0045 , B81B7/0029 , B81B2203/0353 , B81C1/00674 , B81C1/00682 , B81C2201/0112 , B81C2201/0135 , H01L21/768 , H01L21/76898 , H01L23/485 , H01L2924/00 , H01L2924/00014 , H01L2924/0002 , H01L2924/1461 , H01L2924/181
摘要： A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

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