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1. 发明授权

US09691650B2 Substrate transfer robot with chamber and substrate monitoring capability 有权
公开(公告)号：US09691650B2
公开(公告)日：2017-06-27
申请号：US12890281
申请日：2010-09-24
申请人： Shinichi Kurita , Takayuki Matsumoto , Suhail Anwar , Makoto Inagawa
发明人： Shinichi Kurita , Takayuki Matsumoto , Suhail Anwar , Makoto Inagawa
IPC分类号： H01L21/677 , H01L21/67
CPC分类号： H01L21/67742 , H01L21/67259
摘要： A method and apparatus for a transfer robot that having at least one image sensor disposed thereon is provided. The transfer robot includes a lift assembly having a first drive assembly for moving a first platform relative to a second platform in a first linear direction, an end effector assembly disposed on the second platform and movable in a second linear direction by a second drive assembly, the second linear direction being orthogonal to the first linear direction, at least one image sensor, and a lighting device associated with the at least one image sensor.

2. 发明授权

US09324597B2 Vertical inline CVD system 有权
标题翻译：垂直在线CVD系统
公开(公告)号：US09324597B2
公开(公告)日：2016-04-26
申请号：US13098255
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： H01J37/32 , H01L21/67 , C23C16/458 , C23C16/46 , C23C16/511 , C23C16/54 , H01L21/677
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
摘要翻译：本发明一般涉及具有能够处理多个基板的处理室的垂直CVD系统。多个基板设置在处理室内的处理源的相对侧上，但处理环境彼此不隔离。处理源是水平居中的垂直等离子体发生器，其允许在等离子体发生器的任一侧上同时处理多个基板，但彼此独立。该系统被布置为双系统，由此两个相同的处理线各自具有它们自己的处理室，彼此相邻布置。多个机器人用于从处理系统装载和卸载基板。每个机器人可以访问系统内的两条处理线。

3. 发明申请

US20120031335A1 VERTICAL INLINE CVD SYSTEM 有权
标题翻译：立式CVD系统
公开(公告)号：US20120031335A1
公开(公告)日：2012-02-09
申请号：US13098255
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： C23C16/511 , C23C16/458 , C23C16/455
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
摘要翻译：本发明一般涉及具有能够处理多个基板的处理室的垂直CVD系统。多个基板设置在处理室内的处理源的相对侧上，但处理环境彼此不隔离。处理源是水平居中的垂直等离子体发生器，其允许在等离子体发生器的任一侧上同时处理多个基板，但彼此独立。该系统被布置为双系统，由此两个相同的处理线各自具有它们自己的处理室，彼此相邻布置。多个机器人用于从处理系统装载和卸载基板。每个机器人可以访问系统内的两条处理线。

4. 发明申请

US20100011785A1 TUBE DIFFUSER FOR LOAD LOCK CHAMBER 审中-公开
标题翻译：用于负载锁箱的管子扩散器
公开(公告)号：US20100011785A1
公开(公告)日：2010-01-21
申请号：US12501799
申请日：2009-07-13
申请人： Mehran Behdjat , Shinichi Kurita , Makoto Inagawa
发明人： Mehran Behdjat , Shinichi Kurita , Makoto Inagawa
IPC分类号： C23C16/00
CPC分类号： C23C16/54 , H01L21/67109 , H01L21/67201
摘要： Embodiments disclosed herein generally provide a load lock chamber capable of controlling the temperature of the substrate therein. The load lock chamber may have one or more cooling fluid introduction passages that extend across the chamber. Cooling fluid, such as nitrogen gas, may flow through the cooling fluid passage and enter the load lock chamber. The cooling fluid passages may have openings to permit the cooling fluid to exit the passages and enter the load lock chamber. The openings may be arranged to permit a greater amount of cooling fluid to enter the load lock at locations corresponding to the substrate positions that are in contact with an end effector that places the substrate into the load lock chamber. Additionally, the openings may be arranged to permit a greater amount if cooling fluid to enter the load lock chamber in the center of the chamber as compared to the edge of the chamber.
摘要翻译：本文公开的实施例通常提供能够控制其中的基板的温度的负载锁定室。加载锁定室可以具有延伸穿过该腔室的一个或多个冷却流体引入通道。诸如氮气的冷却流体可以流过冷却流体通道并进入负载锁定室。冷却流体通道可以具有允许冷却流体离开通道并进入负载锁定室的开口。开口可以被布置成允许更大量的冷却流体在对应于与将基板放置到负载锁定室中的端部执行器接触的基板位置的位置处进入负载锁定。此外，与腔室的边缘相比，如果冷却流体进入腔室中心的负载锁定室，则开口可以被布置为允许更大的量。

5. 发明授权

US09922854B2 Vertical inline CVD system 有权
公开(公告)号：US09922854B2
公开(公告)日：2018-03-20
申请号：US13098253
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： C23C16/458 , C23C16/46 , C23C16/511 , C23C16/54 , H01J37/32 , H01L21/67 , H01L21/677
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.

6. 发明授权

US09382621B2 Ground return for plasma processes 有权
标题翻译：等离子体工艺的接地回路
公开(公告)号：US09382621B2
公开(公告)日：2016-07-05
申请号：US12700484
申请日：2010-02-04
申请人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
发明人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
IPC分类号： C23C16/509 , C23C16/458 , H01J37/32 , H01L21/67
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和电极或其组合。

7. 发明授权

US08528762B2 Electron beam welding of large vacuum chamber body having a high emissivity coating 有权
标题翻译：具有高发射率涂层的大型真空室体的电子束焊接
公开(公告)号：US08528762B2
公开(公告)日：2013-09-10
申请号：US12534534
申请日：2009-08-03
申请人： Shinichi Kurita , Mehran Behdjat , Makoto Inagawa
发明人： Shinichi Kurita , Mehran Behdjat , Makoto Inagawa
IPC分类号： B65D6/28
CPC分类号： B65D7/06 , B23K15/0006 , B65D7/38 , H01L21/67379
摘要： Embodiments disclosed herein relate to a large vacuum chamber body that has been welded together. The chamber body may have a high emissivity coating on at least one surface therein. Due to the large size of the chamber body, the chamber body may be formed by welding several pieces together rather than forging the body from a single piece of metal. The pieces may be welded together at a location spaced from the corner of the body, which may be under the greatest stress during evacuation, to ensure that the weld, which may be the weakest point in the body, does not fail. At least one surface of the chamber body may be coated with a high emissivity coating to aid in heat transfer from incoming, heated substrates. The high emissivity coating may increase substrate throughput by lowering the time that may be needed to reduce the substrate temperature.
摘要翻译：本文公开的实施例涉及已经焊接在一起的大型真空室主体。腔体可以在其中的至少一个表面上具有高发射率涂层。由于腔室主体的尺寸较大，可以通过将多个部件焊接在一起而不是从单个金属件锻造主体而形成腔体。这些部件可以在与身体的角部间隔开的位置处被焊接在一起，该位置在排空期间可能处于最大的应力下，以确保可能是身体中最弱点的焊缝不会失效。室主体的至少一个表面可以涂覆有高发射率涂层，以帮助来自加热的基底的热传递。高发射率涂层可以通过降低降低衬底温度所需的时间来增加衬底通量。

8. 外观设计

USD670372S1 Heater plate and heater element assembly 有权
标题翻译：加热板和加热器组件
公开(公告)号：USD670372S1
公开(公告)日：2012-11-06
申请号：US29403680
申请日：2011-10-10
申请人： Makoto Inagawa , Shinichi Kurita
设计人： Makoto Inagawa , Shinichi Kurita

9. 发明授权

US08070408B2 Load lock chamber for large area substrate processing system 有权
标题翻译：负载锁定室用于大面积基板处理系统
公开(公告)号：US08070408B2
公开(公告)日：2011-12-06
申请号：US12199341
申请日：2008-08-27
申请人： Mehran Behdjat , Shinichi Kurita , Makoto Inagawa , Suhail Anwar
发明人： Mehran Behdjat , Shinichi Kurita , Makoto Inagawa , Suhail Anwar
IPC分类号： H01L21/677
CPC分类号： H01L21/67201 , H01L21/67236
摘要： The present invention generally includes a load lock chamber for transferring large area substrates into a vacuum processing chamber. The load lock chamber may have one or more separate, environmentally isolated environments. Each processing environment may have a plurality exhaust ports for drawing a vacuum. The exhaust ports may be located at the corners of the processing environment. When a substrate is inserted into the load lock chamber from the factory interface, the environment may need to be evacuated. Due to the exhaust ports located at the corners of the environment, any particles or contaminants that may be present may be pulled to the closest corner and out of the load lock chamber without being pulled across the substrate. Thus, substrate contamination may be reduced.
摘要翻译：本发明通常包括用于将大面积基板输送到真空处理室中的负载锁定室。负载锁定室可以具有一个或多个单独的环境隔离环境。每个处理环境可以具有用于抽真空的多个排气口。排气口可以位于处理环境的拐角处。当基板从出厂界面插入加载锁定室时，环境可能需要抽真空。由于位于环境角落处的排气口，可能存在的任何颗粒或污染物可被拉到最靠近的角落并且不被拉过载体锁定室。因此，可能降低衬底污染。

10. 外观设计

USD687535S1 Heater plate and heater element assembly 有权
标题翻译：加热板和加热器组件
公开(公告)号：USD687535S1
公开(公告)日：2013-08-06
申请号：US29436342
申请日：2012-11-05
申请人： Makoto Inagawa , Shinichi Kurita
设计人： Makoto Inagawa , Shinichi Kurita

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