专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06653242B1 Solution to metal re-deposition during substrate planarization 失效
标题翻译：在衬底平面化期间金属再沉积的解决方案
公开(公告)号：US06653242B1
公开(公告)日：2003-11-25
申请号：US09608078
申请日：2000-06-30
申请人： Lizhong Sun , Stan D Tsai , Shijian Li , John M White
发明人： Lizhong Sun , Stan D Tsai , Shijian Li , John M White
IPC分类号： H01L21302
CPC分类号： H01L21/3212 , C09G1/04
摘要： A method and composition for planarizing a substrate. The composition includes one or more surfactants, including one or more anionic surfactants, Zweitter-ionic surfactants, dispersers, or combinations thereof, one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more surfactants of anionic surfactants, Zweitter-ionic surfactants, or combinations thereof.
摘要翻译：一种用于平坦化衬底的方法和组合物。组合物包括一种或多种表面活性剂，包括一种或多种阴离子表面活性剂，Zweitter离子表面活性剂，分散剂或其组合，一种或多种螯合剂，一种或多种氧化剂，一种或多种腐蚀抑制剂和去离子水。组合物还可以包含一种或多种调节pH和/或磨料颗粒的试剂。该方法包括使用包含一种或多种阴离子表面活性剂，Zweitter离子型表面活性剂或其组合的表面活性剂的组合物平面化底物。

2. 发明授权

US07060606B2 Method and apparatus for chemical mechanical polishing of semiconductor substrates 失效
公开(公告)号：US07060606B2
公开(公告)日：2006-06-13
申请号：US10972191
申请日：2004-10-22
申请人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
发明人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
IPC分类号： H01L21/4763
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

3. 发明授权

US06613200B2 Electro-chemical plating with reduced thickness and integration with chemical mechanical polisher into a single platform 失效
标题翻译：电化学镀层减薄，并与化学机械抛光机整合成单个平台
公开(公告)号：US06613200B2
公开(公告)日：2003-09-02
申请号：US09770559
申请日：2001-01-26
申请人： Shijian Li , Stan D. Tsai , Lizhong Sun
发明人： Shijian Li , Stan D. Tsai , Lizhong Sun
IPC分类号： C25D1700
CPC分类号： B24B37/32 , B24B37/046 , C25D17/001 , H01L21/2885 , H01L21/3212
摘要： An apparatus is provided for depositing and polishing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a basin, a cover, a permeable disc, an anode and a polishing head. The permeable disc is disposed in the basin between the cover and the basin's bottom. The cover has an aperture disposed therein that includes a plurality of pins. The pins extend radially into the aperture and are adapted to support the substrate. The anode is disposed in the basin between the disc and the bottom of the basin. The polishing head is adapted to retain the substrate during processing and includes a retaining ring. The retaining ring has a plurality of grooves disposed therein that mate with the pins when the polishing head is disposed in the aperture. When the substrate is biased via the pins, the potential between the substrate and the anode causes material to be deposited on the substrate's surface.
摘要翻译：提供了一种用于在衬底上沉积和抛光材料层的装置。在一个实施例中，提供了一种装置，其包括盆，盖，可渗透盘，阳极和抛光头。可渗透盘设置在盖和盆底之间的盆中。盖具有设置在其中的孔，其包括多个销。销钉径向延伸到孔中并且适于支撑基底。阳极设置在圆盘和盆底之间的盆中。抛光头适于在加工过程中保持基底并且包括保持环。保持环具有设置在其中的多个槽，当抛光头设置在孔中时与该销相配合。当衬底经由引脚偏置时，衬底和阳极之间的电势使材料沉积在衬底的表面上。

4. 发明授权

US07012025B2 Tantalum removal during chemical mechanical polishing 失效
公开(公告)号：US07012025B2
公开(公告)日：2006-03-14
申请号：US09755717
申请日：2001-01-05
申请人： Lizhong Sun , Stan D. Tsai , Shijian Li , Feng Liu
发明人： Lizhong Sun , Stan D. Tsai , Shijian Li , Feng Liu
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： The invention relates generally to a composition and a method for selective removal of a barrier layer in chemical mechanical polishing. In one aspect, the composition for selective removal of a barrier layer includes at least one reducing agent, ions from at least one transitional metal, and water. The composition may further include at least one buffer for pH stability, at least one pH adjusting agent for providing an initial pH, a corrosion inhibitor, abrasive particles, and/or a metal chelating agent. In another embodiment, the invention relates generally to a composition and a method for removal of a conductive material layer and a barrier layer in chemical mechanical polishing. In one aspect, the method for removal of a conductive material layer and a barrier layer includes applying a conductive-material-layer-selective composition to a polishing pad, polishing the substrate in presence of the conductive-material-layer-selective composition, applying a barrier-layer-selective composition to a polishing pad, and polishing the substrate in presence of the barrier-layer-selective composition.

5. 发明授权

US07008554B2 Dual reduced agents for barrier removal in chemical mechanical polishing 失效
公开(公告)号：US07008554B2
公开(公告)日：2006-03-07
申请号：US10193810
申请日：2002-07-11
申请人： Stan D. Tsai , Shijian Li , Feng Q. Liu , Lizhong Sun , Liang-Yuh Chen
发明人： Stan D. Tsai , Shijian Li , Feng Q. Liu , Lizhong Sun , Liang-Yuh Chen
IPC分类号： C09K13/00
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.

6. 发明授权

US07375023B2 Method and apparatus for chemical mechanical polishing of semiconductor substrates 失效
标题翻译：半导体衬底的化学机械抛光方法和装置
公开(公告)号：US07375023B2
公开(公告)日：2008-05-20
申请号：US11393999
申请日：2006-03-30
申请人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
发明人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
IPC分类号： H01L21/4763
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.
摘要翻译：提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。在一个方面，提供了一种处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，其包括在约2psi或更小的抛光压力和约200cps或更大的压板旋转速度下抛光衬底。抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。磨料的百分比。抛光工艺可以集成到多步抛光工艺中。

7. 发明授权

US06821881B2 Method for chemical mechanical polishing of semiconductor substrates 失效
标题翻译：半导体衬底的化学机械抛光方法
公开(公告)号：US06821881B2
公开(公告)日：2004-11-23
申请号：US10199444
申请日：2002-07-19
申请人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
发明人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
IPC分类号： H01L214763
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.
摘要翻译：提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。在一个方面，提供了一种用于处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，其包括在约2psi或更小的抛光压力和约200cps或更高的压板旋转速度下抛光衬底。抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。磨料的百分比。抛光工艺可以集成到多步抛光工艺中。

8. 发明授权

US06739951B2 Method and apparatus for electrochemical-mechanical planarization 失效
标题翻译：电化学机械平面化方法和装置
公开(公告)号：US06739951B2
公开(公告)日：2004-05-25
申请号：US10097496
申请日：2002-03-14
申请人： Lizhong Sun , Stan D. Tsai , Fred C. Redeker
发明人： Lizhong Sun , Stan D. Tsai , Fred C. Redeker
IPC分类号： B24B100
CPC分类号： H01L21/32125 , B23H5/08 , B24B37/042
摘要： A method for performing electrochemical-mechanical planarization (EMP) of a workpiece surface including a pattern of electrical conductors comprises supplying a chemical-mechanical polishing (CMP)-type apparatus having an abrasive or non-abrasive polishing pad with an oxidizer-free, electrolytically conductive, abrasive or non-abrasive fluid and applying a time-varying anodic potential to the workpiece surface for controllably dissolving the material, e.g., metal, of the electrical conductors while simultaneously applying mechanical polishing action to the surface. The method advantageously reduces or substantially eliminates undesirable dishing characteristic of conventional CMP planarization processing utilizing chemical oxidizer agent(s). Apparatus for performing EMP are also disclosed.
摘要翻译：一种用于执行包括电导体图案的工件表面的电化学 - 机械平面化（EMP）的方法包括：将具有磨料或非研磨性抛光垫的化学机械抛光（CMP）型设备供给无氧化剂，电解导电的，研磨的或非研磨的流体，并且将时变的阳极电位施加到工件表面，以可控制地溶解电导体的材料，例如金属，同时对表面施加机械抛光作用。该方法有利地减少或基本消除利用化学氧化剂的常规CMP平坦化处理的不期望的凹陷特性。还公开了用于执行EMP的装置。

9. 发明授权

US06962524B2 Conductive polishing article for electrochemical mechanical polishing 失效
标题翻译：电化学机械抛光用导电抛光制品
公开(公告)号：US06962524B2
公开(公告)日：2005-11-08
申请号：US10642128
申请日：2003-08-15
申请人： Paul D. Butterfield , Liang-Yuh Chen , Yonqi Hu , Antoine P. Manens , Rashid Mavliev , Stan D. Tsai , Feng Q. Liu , Ralph Wadensweiler , Lizhong Sun , Siew S. Neo , Alain Duboust
发明人： Paul D. Butterfield , Liang-Yuh Chen , Yonqi Hu , Antoine P. Manens , Rashid Mavliev , Stan D. Tsai , Feng Q. Liu , Ralph Wadensweiler , Lizhong Sun , Siew S. Neo , Alain Duboust
IPC分类号： B23H5/00 , B23H5/06 , B23H5/08 , B23H5/10 , B24B37/04 , B24B49/16 , B24B53/007 , B24D13/14 , C25D17/00 , C25D17/10 , H01L21/321 , B24D11/02
CPC分类号： B23H5/06 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/11 , B24B37/22 , B24B37/24 , B24B37/26 , B24B49/16 , B24B53/017 , C25D17/10 , H01L21/32125
摘要： Embodiments of a ball assembly are provided. In one embodiment, a ball assembly includes a housing, a ball, a conductive adapter and a contact element. The housing has an annular seat extending into a first end of an interior passage. The conductive adapter is coupled to a second end of the housing. The contact element electrically couples the adapter and the ball with is retained in the housing between seat and the adapter.
摘要翻译：提供球组件的实施例。在一个实施例中，球组件包括壳体，球，导电适配器和接触元件。壳体具有延伸到内部通道的第一端的环形座。导电适配器联接到壳体的第二端。接触元件将适配器和球电耦合并保持在座椅和适配器之间的壳体中。

10. 发明授权

US06379223B1 Method and apparatus for electrochemical-mechanical planarization 失效
标题翻译：电化学机械平面化方法和装置
公开(公告)号：US06379223B1
公开(公告)日：2002-04-30
申请号：US09450937
申请日：1999-11-29
申请人： Lizhong Sun , Stan D. Tsai , Fred C. Redeker
发明人： Lizhong Sun , Stan D. Tsai , Fred C. Redeker
IPC分类号： B24B100
CPC分类号： H01L21/32125 , B23H5/08 , B24B37/042
摘要： A method for performing electrochemical-mechanical planarization (EMP) of a workpiece surface including a pattern of electrical conductors comprises supplying a chemical-mechanical polishing (CMP)-type apparatus having an abrasive or non-abrasive polishing pad with an oxidizer-free, electrolytically conductive, abrasive or non-abrasive fluid and applying a time-varying anodic potential to the workpiece surface for controllably dissolving the material, e.g., metal, of the electrical conductors while simultaneously applying mechanical polishing action to the surface. The method advantageously reduces or substantially eliminates undesirable dishing characteristic of conventional CMP planarization processing utilizing chemical oxidizer agent(s). Apparatus for performing EMP are also disclosed.
摘要翻译：一种用于执行包括电导体图案的工件表面的电化学 - 机械平面化（EMP）的方法包括：将具有磨料或非研磨性抛光垫的化学机械抛光（CMP）型设备供给无氧化剂，电解导电的，研磨的或非磨蚀的流体，并且将时变的阳极电位施加到工件表面，以可控制地溶解电导体的材料，例如金属，同时对表面施加机械抛光作用。该方法有利地减少或基本消除利用化学氧化剂的常规CMP平坦化处理的不期望的凹陷特性。还公开了用于执行EMP的装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式