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1. 发明授权

US5811356A Reduction in mobile ion and metal contamination by varying season time and bias RF power during chamber cleaning 失效
标题翻译：通过不同的季节时间减少移动离子和金属污染，并在室清洁期间偏置RF功率
公开(公告)号：US5811356A
公开(公告)日：1998-09-22
申请号：US704428
申请日：1996-08-19
申请人： Laxman Murugesh , Pravin Narwankar , Turgut Sahin , Kent Rossman
发明人： Laxman Murugesh , Pravin Narwankar , Turgut Sahin , Kent Rossman
IPC分类号： C23C16/44 , C23C16/50 , C23C16/517 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/00
CPC分类号： H01J37/32862 , C23C16/4401 , C23C16/4404 , C23C16/517 , H01J37/321 , Y10S438/905
摘要： The present invention provides a method and apparatus for reducing the concentration of mobile ion and metal contaminants in a processing chamber by increasing the bias RF power density to greater than 0.051 W/mm.sup.2 and increasing the season time to greater than 30 seconds, during a chamber seasoning step. The method of performing a season step in a chamber by depositing a deposition material under the combined conditions of a bias RF power density of about 0.095 W/mm.sup.2 and a season time of from about 50 to about 70 seconds, reduces the mobile ion and metal contaminant concentrations within the chamber by about one order of magnitude.
摘要翻译：本发明提供了一种通过在室内增加偏压RF功率密度大于0.051W / mm 2并将季节时间增加到大于30秒来减少处理室中的移动离子和金属污染物的浓度的方法和装置调味步骤通过在约0.095W / mm 2的偏置RF功率密度和约50至约70秒的季节时间的组合条件下沉积沉积材料在室中进行季节步骤的方法减少了移动离子和金属室内的污染物浓度大约一个数量级。

2. 发明授权

US07294205B1 Method for reducing the intrinsic stress of high density plasma films 失效
标题翻译：降低高密度等离子体膜的固有应力的方法
公开(公告)号：US07294205B1
公开(公告)日：2007-11-13
申请号：US09362504
申请日：1999-07-27
申请人： K. V. Ravi , Kent Rossman , Turgut Sahin , Pravin Narwankar
发明人： K. V. Ravi , Kent Rossman , Turgut Sahin , Pravin Narwankar
IPC分类号： C23C16/50 , C23C16/503 , C23C16/515 , C23C16/40 , C23C16/24 , H01L21/306 , C23F1/00
CPC分类号： H01L21/02164 , C23C16/402 , C23C16/517 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/31612
摘要： A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.
摘要翻译：通过延迟或中断电容耦合RF能量的应用，使用HDP-CVD系统在衬底上形成一层减小的应力。通过将工艺气体引入HDP系统室并通过将RF功率施加到感应线圈从工艺气体形成等离子体而形成该层。在选定的时间段之后，通过维持电感耦合等离子体并且将等离子体偏压到衬底来沉积膜的第二层，以增强等离子体的溅射效应。在优选实施例中，沉积膜是氧化硅膜，并且通过将来自RF发生器的电容耦合的RF功率施加到顶板电极和晶片支撑电极来执行偏置。

3. 发明授权

US5976993A Method for reducing the intrinsic stress of high density plasma films 失效
标题翻译：降低高密度等离子体膜的固有应力的方法
公开(公告)号：US5976993A
公开(公告)日：1999-11-02
申请号：US623445
申请日：1996-03-28
申请人： K. V. Ravi , Kent Rossman , Turgut Sahin , Pravin Narwankar
发明人： K. V. Ravi , Kent Rossman , Turgut Sahin , Pravin Narwankar
IPC分类号： C23C16/40 , C23C16/517 , H01L21/316 , H01L21/02
CPC分类号： H01L21/02164 , C23C16/402 , C23C16/517 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/31612
摘要： A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.
摘要翻译：通过延迟或中断电容耦合RF能量的应用，使用HDP-CVD系统在衬底上形成一层减小的应力。通过将工艺气体引入HDP系统室并通过将RF功率施加到感应线圈从工艺气体形成等离子体而形成该层。在选定的时间段之后，通过维持电感耦合等离子体并且将等离子体偏压到衬底来沉积膜的第二层，以增强等离子体的溅射效应。在优选实施例中，沉积膜是氧化硅膜，并且通过将来自RF发生器的电容耦合的RF功率施加到顶板电极和晶片支撑电极来执行偏置。

4. 发明授权

US6121161A Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions 失效
标题翻译：使用室调节膜沉积减少HDP-CVD室中的移动离子和金属污染
公开(公告)号：US6121161A
公开(公告)日：2000-09-19
申请号：US233366
申请日：1999-01-19
申请人： Kent Rossman , Turgut Sahin , Hichem M'Saad , Romuald Nowak
发明人： Kent Rossman , Turgut Sahin , Hichem M'Saad , Romuald Nowak
IPC分类号： C23C14/56 , C23C16/44 , C23C16/50 , H01L21/205 , H01L21/31
CPC分类号： C23C16/4401 , C23C14/564 , C23C16/4404
摘要： A method and apparatus for controlling the introduction of contaminates into a deposition chamber that occur naturally within the chamber components. The CVD chamber is "seasoned" with a protective layer after a dry clean operation and before a substrate is introduced into the chamber. The deposited seasoning layer has a lower diffusion rate for typical contaminants in relation to the chamber component materials and covers the chamber component, reducing the likelihood that the naturally occurring contaminants will interfere with subsequent processing steps. After deposition of the seasoning layer is complete, the chamber is used for one to n substrate deposition steps before being cleaned by another clean operation as described above and then reseasoned.
摘要翻译：一种用于控制污染物引入到腔室部件内自然发生的沉积室的方法和装置。在干燥清洁操作之后并且在将基板引入室之前，CVD室被保护层“经过调节”。沉积的调味剂层对于典型的污染物相对于室组分材料具有较低的扩散速率并且覆盖室组分，降低了天然存在的污染物将干扰后续处理步骤的可能性。在调味层的沉积完成之后，将该室用于一至n个衬底沉积步骤，然后通过如上所述的另一个清洁操作进行清洁，然后再次进行处理。

5. 发明授权

US06821577B2 Staggered in-situ deposition and etching of a dielectric layer for HDP CVD 失效
标题翻译：用于HDP CVD的电介质层的交错原位沉积和蚀刻
公开(公告)号：US06821577B2
公开(公告)日：2004-11-23
申请号：US10234988
申请日：2002-09-04
申请人： Kent Rossman
发明人： Kent Rossman
IPC分类号： H05H124
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/402 , C23C16/4482 , C23C16/45561 , C23C16/507 , H01J37/321 , H01J37/32302 , H01J37/32449 , H01J37/32862 , H01J37/3299 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31051 , H01L21/31608 , H01L21/31612 , H01L21/76837
摘要： A method for depositing a conformal dielectric layer employing a dep-etch technique features selectively decreasing the deposition gas present in a process chamber where a substrate to be covered by the conformal dielectric layer is disposed. By selectively decreasing the deposition gas present in the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.
摘要翻译：使用去蚀刻技术沉积共形介电层的方法特征在于选择性地降低存在于处理室中的沉积气体，其中设置由保形介电层覆盖的衬底。通过选择性地减少存在于处理室中的沉积气体，处理室中的形成等离子体的溅射气体的浓度增加。沉积气体的流动优选地周期性地终止，以提供接近100％的溅射气体浓度。以这种方式，可以大大增加具有足够的间隙填充特性的保形介电层的蚀刻速率，同时允许其沉积速率的增加。

6. 发明授权

US06696362B2 Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes 失效
标题翻译：使用原位粒子传感器监测等离子体沉积过程中的粒子性能的方法
公开(公告)号：US06696362B2
公开(公告)日：2004-02-24
申请号：US10122058
申请日：2002-04-12
申请人： Kent Rossman , Leonard Jay Olmer , Phillip Nguyen
发明人： Kent Rossman , Leonard Jay Olmer , Phillip Nguyen
IPC分类号： H01L2131
CPC分类号： C23C16/4404 , C23C30/00 , H01J37/32477 , H01L21/02131 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76801
摘要： Methods are provided for identifying root causes of particle issues and for developing particle-robust process recipes in plasma deposition processes. The presence of in situ particles within the substrate processing system is detected over a period of time that spans multiple distinct processing steps in the recipe. The time dependence of in situ particle levels is determined from these results. Then, the processing steps are correlated with the time dependence to identify relative particle levels with the processing steps. This information provides a direct indication of which steps result in the production of particle contaminants so that those steps may be targeted for modification in the development of particle recipes.
摘要翻译：提供了用于确定颗粒问题的根本原因并开发等离子体沉积工艺中的粒子稳定工艺配方的方法。在一段时间内检测基底处理系统内原位颗粒的存在，跨越食谱中的多个不同的处理步骤。从这些结果确定原位颗粒水平的时间依赖性。然后，处理步骤与时间依赖相关，以利用处理步骤来识别相对颗粒水平。该信息提供了哪些步骤导致颗粒污染物的产生的直接指示，使得可以将这些步骤用于改进颗粒配方的开发。

7. 发明授权

US07455893B2 Staggered in-situ deposition and etching of a dielectric layer for HDP-CVD 失效
标题翻译：用于HDP-CVD的电介质层的交错原位沉积和蚀刻
公开(公告)号：US07455893B2
公开(公告)日：2008-11-25
申请号：US11580271
申请日：2006-10-11
申请人： Kent Rossman
发明人： Kent Rossman
IPC分类号： H05H1/24
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/402 , C23C16/4482 , C23C16/45561 , C23C16/507 , H01J37/321 , H01J37/32302 , H01J37/32449 , H01J37/32862 , H01J37/3299 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31051 , H01L21/31608 , H01L21/31612 , H01L21/76837
摘要： A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.
摘要翻译：使用去蚀刻技术沉积保形介电层的方法和装置特征在于选择性地减少沉积气体流入处理室，其中设置具有被保形电介质层覆盖的台阶表面的基板。通过选择性地减少沉积气体进入处理室的流量，在处理室中从其中形成等离子体的溅射气体的浓度增加而不增加其中的压力。沉积气体的流动优选地周期性地终止，以提供接近100％的溅射气体浓度。以这种方式，可以大大增加具有足够的间隙填充特性的保形介电层的蚀刻速率，同时允许其沉积速率的增加。

8. 发明授权

US06458722B1 Controlled method of silicon-rich oxide deposition using HDP-CVD 失效
标题翻译：使用HDP-CVD的富硅氧化物沉积的控制方法
公开(公告)号：US06458722B1
公开(公告)日：2002-10-01
申请号：US09697380
申请日：2000-10-25
申请人： Bikram Kapoor , Kent Rossman
发明人： Bikram Kapoor , Kent Rossman
IPC分类号： H01L2131
CPC分类号： C23C16/401 , C23C16/0209 , C23C16/402
摘要： A method and system for forming a layer on a substrate in a process chamber are provided. Deposition gases are provided to the process chamber and permitted to mix in the desired relative concentrations prior to the deposition step, resulting in improved composition uniformity of the layer. This may be accomplished by generating a heating plasma from a first gaseous mixture. The plasma is then terminated and a second gaseous mixture is provided to the process chamber such that the second gaseous mixture is substantially uniformly mixed. A second plasma is then generated from the second gaseous mixture to deposit the layer on the substrate.
摘要翻译：提供了一种用于在处理室中在基板上形成层的方法和系统。将沉积气体提供给处理室，并允许在沉积步骤之前以期望的相对浓度混合，从而改善层的组成均匀性。这可以通过从第一气体混合物产生加热等离子体来实现。然后等离子体被终止，并且向处理室提供第二气体混合物，使得第二气体混合物基本均匀地混合。然后从第二气体混合物产生第二等离子体以将该层沉积在衬底上。

9. 发明授权

US07132134B2 Staggered in-situ deposition and etching of a dielectric layer for HDP CVD 失效
公开(公告)号：US07132134B2
公开(公告)日：2006-11-07
申请号：US10938174
申请日：2004-09-10
申请人： Kent Rossman
发明人： Kent Rossman
IPC分类号： H05H1/24
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/402 , C23C16/4482 , C23C16/45561 , C23C16/507 , H01J37/321 , H01J37/32302 , H01J37/32449 , H01J37/32862 , H01J37/3299 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31051 , H01L21/31608 , H01L21/31612 , H01L21/76837
摘要： A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

10. 发明授权

US06846742B2 Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput 失效
标题翻译： Si调味剂减少颗粒，延长清洁频率，阻止移动离子并增加室内产量
公开(公告)号：US06846742B2
公开(公告)日：2005-01-25
申请号：US10463703
申请日：2003-06-16
申请人： Kent Rossman
发明人： Kent Rossman
IPC分类号： C23C16/44 , C23C30/00 , G01Q30/16 , G01Q30/20 , H01J37/32 , H01L21/316 , H01L21/768 , H01L21/44
CPC分类号： H01J37/32477 , C23C16/4404 , C23C30/00 , H01L21/02131 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76801 , Y10S438/905 , Y10S438/913
摘要： Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (SinH2n+2) process gas and/or is deposited from a plasma having a density of at least 1×1011 ions/cm3.
摘要翻译：本发明的实施例包括沉积改进的调味膜的方法。在一个实施例中，该方法包括在执行基板处理操作之前，在与氧化硅层相反的基板处理室的内表面上形成硅层。在某些实施方案中，硅层包含至少70％的原子硅，由高密度硅烷（SinH2n + 2）工艺气体沉积和/或从密度为至少1×10 11个/ cm 3。

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