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1. 发明授权

US07205240B2 HDP-CVD multistep gapfill process 失效
标题翻译： HDP-CVD多步填缝工艺
公开(公告)号：US07205240B2
公开(公告)日：2007-04-17
申请号：US10456611
申请日：2003-06-04
申请人： M. Ziaul Karim , Bikram Kapoor , Anchuan Wang , Dong Qing Li , Katsunari Ozeki , Manoj Vellaikal , Zhuang Li
发明人： M. Ziaul Karim , Bikram Kapoor , Anchuan Wang , Dong Qing Li , Katsunari Ozeki , Manoj Vellaikal , Zhuang Li
IPC分类号： C23C16/00
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/31116 , H01L21/76837
摘要： A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.
摘要翻译：使用HDP-CVD沉积，蚀刻和沉积步骤的循环来提供间隙填充方法。第一沉积步骤期间的流动气体包括诸如He的惰性气体，但在剩余沉积步骤期间包括H 2 O 3。在第一沉积步骤期间流动气体的较高的平均分子量提供了一些限定在蚀刻步骤期间保护它们的间隙的结构。在剩余沉积步骤期间流动气体的较低平均分子量具有降低的溅射特性，并且在填充间隙的剩余部分时是有效的。

2. 发明申请

US20050282398A1 Oxygen plasma treatment for enhanced HDP-CVD gapfill 失效
标题翻译：氧等离子体处理用于增强HDP-CVD填隙
公开(公告)号：US20050282398A1
公开(公告)日：2005-12-22
申请号：US10870232
申请日：2004-06-16
申请人： Hemant Mungekar , Young Lee , Manoj Vellaikal , Karen Greig , Bikram Kapoor
发明人： Hemant Mungekar , Young Lee , Manoj Vellaikal , Karen Greig , Bikram Kapoor
IPC分类号： C23C16/40 , C23C16/455 , C23C16/505 , H01L21/00 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/469
CPC分类号： H01L21/02164 , C23C16/402 , C23C16/45523 , C23C16/505 , H01L21/02274 , H01L21/31612
摘要： Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 1011 ions/cm3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 1011 ions/cm3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.
摘要翻译：提供了用于在设置在基板处理室中的基板上沉积氧化硅膜的方法。基板在相邻的凸起表面之间形成间隙。具有含硅气体，含氧气体和流动气体的工艺气体流入基板处理室。将流体气体以至少500sccm的流量引入基板处理室。形成等离子体，其具有距工艺气体至少10×10 11 / cm 3以上的离子密度，以将氧化硅膜的第一部分沉积在衬底上并且进入差距。此后，将沉积的第一部分暴露于具有至少10×10 11 / cm 3以上的氧等离子体。此后，氧化硅膜的第二部分沉积在衬底上并进入间隙。

3. 发明授权

US07628897B2 Reactive ion etching for semiconductor device feature topography modification 失效
标题翻译：半导体器件的反应离子蚀刻特征地形修改
公开(公告)号：US07628897B2
公开(公告)日：2009-12-08
申请号：US10660813
申请日：2003-09-12
申请人： Hemant P. Mungekar , Anjana M. Patel , Manoj Vellaikal , Anchuan Wang , Bikram Kapoor
发明人： Hemant P. Mungekar , Anjana M. Patel , Manoj Vellaikal , Anchuan Wang , Bikram Kapoor
IPC分类号： C23C14/35 , C23C16/00 , H01L21/311
CPC分类号： C23C16/045 , C23C16/401 , C23C16/505 , H01L21/02129 , H01L21/02131 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/31625 , H01L21/31633
摘要： A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.
摘要翻译：将膜沉积在设置在基板处理室中的基板上。衬底具有形成在相邻的凸起表面之间的沟槽。膜的第一部分通过化学气相沉积从流入处理室的第一气态混合物沉积在衬底上。此后，通过使具有卤素前体，氢前体和氧前体的蚀刻剂气体流入处理室来蚀刻第一部分。此后，膜的第二部分通过化学气相沉积从流过处理室的第二气态混合物沉积在衬底上。

4. 发明授权

US06458722B1 Controlled method of silicon-rich oxide deposition using HDP-CVD 失效
标题翻译：使用HDP-CVD的富硅氧化物沉积的控制方法
公开(公告)号：US06458722B1
公开(公告)日：2002-10-01
申请号：US09697380
申请日：2000-10-25
申请人： Bikram Kapoor , Kent Rossman
发明人： Bikram Kapoor , Kent Rossman
IPC分类号： H01L2131
CPC分类号： C23C16/401 , C23C16/0209 , C23C16/402
摘要： A method and system for forming a layer on a substrate in a process chamber are provided. Deposition gases are provided to the process chamber and permitted to mix in the desired relative concentrations prior to the deposition step, resulting in improved composition uniformity of the layer. This may be accomplished by generating a heating plasma from a first gaseous mixture. The plasma is then terminated and a second gaseous mixture is provided to the process chamber such that the second gaseous mixture is substantially uniformly mixed. A second plasma is then generated from the second gaseous mixture to deposit the layer on the substrate.
摘要翻译：提供了一种用于在处理室中在基板上形成层的方法和系统。将沉积气体提供给处理室，并允许在沉积步骤之前以期望的相对浓度混合，从而改善层的组成均匀性。这可以通过从第一气体混合物产生加热等离子体来实现。然后等离子体被终止，并且向处理室提供第二气体混合物，使得第二气体混合物基本均匀地混合。然后从第二气体混合物产生第二等离子体以将该层沉积在衬底上。

5. 发明授权

US07595088B2 Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology 失效
标题翻译：氢辅助HDP-CVD沉积工艺，用于积极的间隙填充技术
公开(公告)号：US07595088B2
公开(公告)日：2009-09-29
申请号：US10915781
申请日：2004-08-10
申请人： Bikram Kapoor , M. Ziaul Karim , Anchuan Wang
发明人： Bikram Kapoor , M. Ziaul Karim , Anchuan Wang
IPC分类号： C23C16/00 , C23C16/40 , H05H1/24
CPC分类号： C23C16/045 , C23C16/402 , C23C16/45523 , H01J37/321 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31612
摘要： A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with highD/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lowerD/S ratio of, for example, 3-10.
摘要翻译：一种在相邻的凸起表面之间形成有沟槽的衬底上沉积氧化硅层的方法。在一个实施例中，氧化硅层形成在多步骤工艺中，其包括通过形成高密度等离子体工艺在衬底上和沟槽内沉积第一部分层，该高密度等离子体工艺具有来自第一工艺气体的同时淀积和溅射组分，源，氧源和具有高D / S比的氦和/或分子氢，例如10-20，然后通过形成高密度等离子体在衬底上和沟槽内沉积氧化硅层的第二部分具有来自包含硅源，氧源和低D / S比例如3-10的分子氢的第二工艺气体的同时沉积和溅射组分的方法。

6. 发明申请

US20050260356A1 Microcontamination abatement in semiconductor processing 审中-公开
标题翻译：半导体加工微污染减排
公开(公告)号：US20050260356A1
公开(公告)日：2005-11-24
申请号：US10847922
申请日：2004-05-18
申请人： Hemant Mungekar , Bikram Kapoor , Zhuang Li
发明人： Hemant Mungekar , Bikram Kapoor , Zhuang Li
IPC分类号： C23C16/00 , C23C16/40 , C23C16/44 , H01L21/316
CPC分类号： H01L21/02274 , C23C16/402 , C23C16/4401 , H01L21/02164 , H01L21/02211
摘要： A film is deposited over a substrate by flowing a process gas to a process chamber and flowing a fluent gas to the process chamber. The process gas includes a silicon-containing gas and an oxygen-containing gas. The fluent gas includes a flow of helium and a flow of molecular hydrogen, the flow of molecular hydrogen being provided at a flow rate less than 20% of a flow rate of the helium. A plasma is formed in the process chamber with a density greater than 1011 ions/cm3. The film is deposited over the substrate with the plasma.
摘要翻译：通过将处理气体流动到处理室并将流动气体流动到处理室，将膜沉积在基板上。工艺气体包括含硅气体和含氧气体。流体气体包括氦气流和分子氢气流，分子氢的流量以小于氦气流速的20％的流量提供。在处理室中形成等离子体，其密度大于10 11离子/ cm 3。该膜用等离子体沉积在衬底上。

7. 发明授权

US06808748B2 Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology 有权
标题翻译：氢辅助HDP-CVD沉积工艺，用于积极的间隙填充技术
公开(公告)号：US06808748B2
公开(公告)日：2004-10-26
申请号：US10350445
申请日：2003-01-23
申请人： Bikram Kapoor , M. Ziaul Karim , Anchuan Wang
发明人： Bikram Kapoor , M. Ziaul Karim , Anchuan Wang
IPC分类号： C23C1640
CPC分类号： C23C16/045 , C23C16/402 , C23C16/45523 , H01J37/321 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31612
摘要： A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with high D/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lower D/S ratio of, for example, 3-10.
摘要翻译：一种在相邻的凸起表面之间形成有沟槽的衬底上沉积氧化硅层的方法。在一个实施例中，氧化硅层形成在多步骤工艺中，其包括通过形成高密度等离子体工艺在衬底上和沟槽内沉积第一部分层，该高密度等离子体工艺具有来自第一工艺气体的同时淀积和溅射组分，源，氧源和具有高D / S比的氦和/或分子氢，例如10-20，然后，通过形成高密度，在衬底上和沟槽内沉积氧化硅层的第二部分等离子体工艺，其具有来自第二工艺气体的同时沉积和溅射组分，所述第二工艺气体包括硅源，氧源和具有例如3-10的较低D / S比的分子氢。

8. 发明授权

US07229931B2 Oxygen plasma treatment for enhanced HDP-CVD gapfill 失效
标题翻译：氧等离子体处理用于增强HDP-CVD填隙
公开(公告)号：US07229931B2
公开(公告)日：2007-06-12
申请号：US10870232
申请日：2004-06-16
申请人： Hemant P. Mungekar , Young S Lee , Manoj Vellaikal , Karen Greig , Bikram Kapoor
发明人： Hemant P. Mungekar , Young S Lee , Manoj Vellaikal , Karen Greig , Bikram Kapoor
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02164 , C23C16/402 , C23C16/45523 , C23C16/505 , H01L21/02274 , H01L21/31612
摘要： Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 1011 ions/cm3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 1011 ions/cm3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.
摘要翻译：提供了用于在设置在基板处理室中的基板上沉积氧化硅膜的方法。基板在相邻的凸起表面之间形成间隙。具有含硅气体，含氧气体和流动气体的工艺气体流入基板处理室。将流体气体以至少500sccm的流量引入基板处理室。形成等离子体，其具有距工艺气体至少10×10 11 / cm 3以上的离子密度，以将氧化硅膜的第一部分沉积在衬底上并且进入差距。此后，将沉积的第一部分暴露于具有至少10×10 11 / cm 3以上的氧等离子体。此后，氧化硅膜的第二部分沉积在衬底上并进入间隙。

9. 发明申请

US20050008790A1 Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology 失效
标题翻译：氢辅助HDP-CVD沉积工艺，用于积极的间隙填充技术
公开(公告)号：US20050008790A1
公开(公告)日：2005-01-13
申请号：US10915781
申请日：2004-08-10
申请人： Bikram Kapoor , M. Ziaul Karim , Anchuan Wang
发明人： Bikram Kapoor , M. Ziaul Karim , Anchuan Wang
IPC分类号： C23C16/04 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/316 , H05H1/24 , C23C16/00
CPC分类号： C23C16/045 , C23C16/402 , C23C16/45523 , H01J37/321 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31612
摘要： A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with highD/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lowerD/S ratio of, for example, 3-10.
摘要翻译：一种在相邻的凸起表面之间形成有沟槽的衬底上沉积氧化硅层的方法。在一个实施例中，氧化硅层形成在多步骤工艺中，其包括通过形成高密度等离子体工艺在衬底上和沟槽内沉积第一部分层，该高密度等离子体工艺具有来自第一工艺气体的同时淀积和溅射组分，源，氧源和具有高D / S比的氦和/或分子氢，例如10-20，然后通过形成高密度等离子体在衬底上和沟槽内沉积氧化硅层的第二部分具有来自包含硅源，氧源和低D / S比例如3-10的分子氢的第二工艺气体的同时沉积和溅射组分的方法。

10. 发明授权

US06802944B2 High density plasma CVD process for gapfill into high aspect ratio features 有权
标题翻译：高密度等离子体CVD工艺，用于间隙填充到高纵横比特征
公开(公告)号：US06802944B2
公开(公告)日：2004-10-12
申请号：US10279961
申请日：2002-10-23
申请人： Farhan Ahmad , Michael Awdshiew , Alok Jain , Bikram Kapoor
发明人： Farhan Ahmad , Michael Awdshiew , Alok Jain , Bikram Kapoor
IPC分类号： C23C1434
CPC分类号： H01L21/02129 , C23C16/045 , C23C16/401 , C23C16/505 , H01L21/02131 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/31625 , H01L21/31633 , H01L21/76837
摘要： A method of depositing a film on a substrate. In one embodiment, the method includes depositing a first portion of the film using a high density plasma to partially fill a gap formed between adjacent features formed on the substrate. The film deposition process is then stopped before or shortly after the entry of the gap pinches off and the film is etched to widen entry to the gap using a two step etching process that includes a first physical etch step that forms a plasma from a sputtering agent introduced into the processing chamber and biases the plasma towards the substrate and a subsequent chemical etch step that forms a plasma from a reactive etchant gas introduced into the processing chamber. After the etching sequence is complete, a second portion of the film is deposited over the first portion using a high density plasma to further fill the gap.
摘要翻译：一种在衬底上沉积膜的方法。在一个实施例中，该方法包括使用高密度等离子体沉积膜的第一部分以部分地填充形成在衬底上形成的相邻特征之间的间隙。然后在间隙夹紧进入之前或不久之后停止膜沉积工艺，并且使用包括从溅射剂形成等离子体的第一物理蚀刻步骤的两步蚀刻工艺来蚀刻膜以加宽到间隙的入口引入处理室并将等离子体偏压到衬底，以及随后的化学蚀刻步骤，其从引入处理室的反应性蚀刻剂气体形成等离子体。在蚀刻顺序完成之后，使用高密度等离子体在第一部分上沉积膜的第二部分以进一步填充间隙。

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