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    • 10. 发明授权
    • Silicon based light emitting diode
    • 硅基发光二极管
    • US07671377B2
    • 2010-03-02
    • US11720987
    • 2005-11-14
    • Tae-Youb KimNae-Man ParkKyung-Hyun KimGun-Yong Sung
    • Tae-Youb KimNae-Man ParkKyung-Hyun KimGun-Yong Sung
    • H01L33/00H01L29/06
    • H01L33/465H01L33/34H01L33/38
    • Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.
    • 提供了包括分布式布拉格反射器(DBR),n型掺杂层和p型衬底结构的高效硅基发光二极管(LED)。 硅基LED包括:具有p型台面基板结构的基板; 活性层,其形成在所述基材上并具有与所述第一表面相对的第一表面和第二表面; 面向有源层的第一表面的第一反射层; 第二反射层,其位于p型衬底结构的任一侧并面向有源层的第二表面; 夹在有源层和第一反射层之间的n型掺杂层; 电连接到所述n型掺杂层的第一电极; 以及与p型基板结构电连接的第二电极。