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1. 发明申请

US20160358927A1 MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US20160358927A1
公开(公告)日：2016-12-08
申请号：US15049160
申请日：2016-02-22
申请人： Phil Ouk NAM , Yong Hoon SON , Kyung Hyun KIM , Byeong Ju KIM , Kwang Chul PARK , Yeon Sil SOHN , Jin I LEE , Jong Heun LIM , Won Bong JUNG
发明人： Phil Ouk NAM , Yong Hoon SON , Kyung Hyun KIM , Byeong Ju KIM , Kwang Chul PARK , Yeon Sil SOHN , Jin I LEE , Jong Heun LIM , Won Bong JUNG
IPC分类号： H01L27/115 , H01L21/02
CPC分类号： H01L27/1157 , H01L21/02667 , H01L21/02675 , H01L27/11573 , H01L27/11582
摘要： A memory device, including a first memory region including a first substrate, a plurality of first semiconductor devices on the first substrate, and a first interlayer insulating layer covering the plurality of first semiconductor devices; and a second memory region including a second substrate on the first interlayer insulating layer and a plurality of second semiconductor devices on the second substrate, the second substrate including a first region in a plurality of grooves in the first interlayer insulating layer and a second region including grains extending from the first region, the second region being on an upper surface of the first interlayer insulating layer.
摘要翻译：一种存储器件，包括第一存储区域，包括第一衬底，第一衬底上的多个第一半导体器件以及覆盖多个第一半导体器件的第一层间绝缘层; 以及第二存储区域，包括在所述第一层间绝缘层上的第二衬底和所述第二衬底上的多个第二半导体器件，所述第二衬底包括在所述第一层间绝缘层中的多个沟槽中的第一区域和包括晶粒从第一区域延伸，第二区域位于第一层间绝缘层的上表面上。

2. 发明申请

US20140048945A1 NONVOLATILE MEMORY DEVICE AND A METHOD FOR FABRICATING THE SAME 有权
标题翻译：非易失存储器件及其制造方法
公开(公告)号：US20140048945A1
公开(公告)日：2014-02-20
申请号：US13927914
申请日：2013-06-26
申请人： Jong-Heun LIM , Hyo-Jung KIM , Ji-Woon IM , Kyung-Hyun KIM
发明人： Jong-Heun LIM , Hyo-Jung KIM , Ji-Woon IM , Kyung-Hyun KIM
IPC分类号： H01L23/48
CPC分类号： H01L23/48 , H01L27/11575 , H01L27/11582 , H01L2924/0002 , H01L2924/00
摘要： A nonvolatile memory device including a substrate which includes a cell array region and a connection region, an electrode structure formed on the cell array region and the connection region and including a plurality of laminated electrodes, a first recess formed in the electrode structure on the connection region and disposed between the cell array region and a second recess formed in the electrode structure on the connection region, and a plurality of vertical wirings formed on the plurality of electrodes exposed by the first recess.
摘要翻译：一种非易失性存储器件，包括：包括单元阵列区域和连接区域的基板;形成在单元阵列区域上的电极结构和连接区域，并且包括多个层压电极;形成在电极结构中的第一凹部，并且布置在单元阵列区域和形成在连接区域上的电极结构中的第二凹槽之间，以及形成在由第一凹部暴露的多个电极上的多个垂直布线。

3. 发明授权

US08575753B2 Semiconductor device having a conductive structure including oxide and non oxide portions 有权
标题翻译：具有包括氧化物和非氧化物部分的导电结构的半导体器件
公开(公告)号：US08575753B2
公开(公告)日：2013-11-05
申请号：US12787056
申请日：2010-05-25
申请人： Suk-hun Choi , Ki-ho Bae , Yi-koan Hong , Kyung-hyun Kim , Tae-hyun Kim , Kyung-tae Nam , Jun-ho Jeong
发明人： Suk-hun Choi , Ki-ho Bae , Yi-koan Hong , Kyung-hyun Kim , Tae-hyun Kim , Kyung-tae Nam , Jun-ho Jeong
IPC分类号： H01L29/40
CPC分类号： H01L27/228 , H01L21/76831 , H01L21/76834 , H01L21/76856 , H01L21/76888 , H01L23/5228 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/126 , H01L45/144 , H01L45/1666 , H01L45/1683 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an interlayer insulating layer disposed on a substrate, the interlayer insulating layer comprising an opening exposing the substrate, a barrier layer pattern disposed within the opening, and a conductive pattern disposed on the barrier layer pattern, the conductive pattern having an oxidized portion extending out of the opening and a non-oxidized portion within the opening, wherein a width of the conductive pattern is determined by a thickness of the barrier layer pattern.
摘要翻译：半导体器件包括设置在衬底上的层间绝缘层，所述层间绝缘层包括露出衬底的开口，设置在所述开口内的阻挡层图案以及设置在所述阻挡层图案上的导电图案，所述导电图案具有氧化从开口延伸的部分和开口内的非氧化部分，其中导电图案的宽度由阻挡层图案的厚度确定。

4. 发明授权

US08321777B2 Cyclic redundancy check code generating circuit, semiconductor memory device, and method of driving semiconductor memory device 有权
标题翻译：循环冗余校验码产生电路，半导体存储器件以及驱动半导体存储器件的方法
公开(公告)号：US08321777B2
公开(公告)日：2012-11-27
申请号：US12002557
申请日：2007-12-18
申请人： Kyung-hyun Kim
发明人： Kyung-hyun Kim
IPC分类号： G06F11/00 , H03M13/00
CPC分类号： H03M13/09 , G06F11/1004 , H03M13/1102 , H03M13/136 , H03M13/1515 , H03M13/19 , H03M13/2957
摘要： Disclosed are a semiconductor memory device, and a method of driving the same, and a cyclic redundancy check code generating circuit capable of performing cyclic redundancy check. A semiconductor memory device according to an aspect of the present invention includes a memory cell array, a data processing unit receiving data that is read from the memory cell array and selectively outputting at least some of the data according to ordering information, bit structure information, and burst length information, and a check code generating unit generating a cyclic redundancy check code to detect an error in the data being output, the check code generating unit generating and outputting the cyclic redundancy check code by using the read data, the ordering information, the bit structure information, and the burst length information.
摘要翻译：公开了一种半导体存储器件及其驱动方法，以及能够执行循环冗余校验的循环冗余校验码产生电路。根据本发明的一个方面的半导体存储器件包括存储单元阵列，数据处理单元，接收从存储单元阵列读取的数据，并根据排序信息，比特结构信息选择性地输出数据中的至少一些，检测码生成部，生成循环冗余校验码，检测出正在输出的数据的错误;校验码生成部，使用读取的数据生成并输出循环冗余校验码，排序信息，比特结构信息和突发长度信息。

5. 发明授权

US08283248B2 Methods of manufacturing semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08283248B2
公开(公告)日：2012-10-09
申请号：US13234558
申请日：2011-09-16
申请人： Tae-Hyun Kim , Kyung-Hyun Kim , Jae-Hwang Sim , Jae-Jin Shin , Jong-Heun Lim , Hyun-Min Park
发明人： Tae-Hyun Kim , Kyung-Hyun Kim , Jae-Hwang Sim , Jae-Jin Shin , Jong-Heun Lim , Hyun-Min Park
IPC分类号： H01L21/4763
CPC分类号： H01L27/11526 , H01L21/764 , H01L21/7682 , H01L27/11529 , H01L27/11573
摘要： A method of manufacturing a semiconductor device includes forming a plurality of preliminary gate structures, forming a capping layer pattern on sidewalls of the plurality of preliminary gate structures, and forming a blocking layer on top surfaces of the plurality of preliminary gate structures and the capping layer pattern such that a void is formed therebetween. The method also includes removing the blocking layer and an upper portion of the capping layer pattern such that at least the upper sidewalls of the plurality of preliminary gate structures are exposed, and a lower portion of the capping layer pattern remains on lower sidewalls of the preliminary gate structures. The method further includes forming a conductive layer on at least the upper sidewalls of the plurality of preliminary gate structures, reacting the conductive layer with the preliminary gate structures, and forming an insulation layer having an air gap therein.
摘要翻译：一种制造半导体器件的方法包括：形成多个初步栅极结构，在多个预选栅极结构的侧壁上形成覆盖层图案，以及在多个预选栅极结构的顶表面上形成阻挡层，并且覆盖层使得它们之间形成空隙。该方法还包括去除阻挡层和覆盖层图案的上部，使得至少多个预选栅极结构的上侧壁被暴露，并且覆盖层图案的下部保留在预备的栅极结构的下侧壁上门结构。所述方法还包括在所述多个预选择门结构的至少上侧壁上形成导电层，使所述导电层与所述预选栅极结构反应，以及在其中形成具有气隙的绝缘层。

6. 发明授权

US08222055B2 Silicon nitride layer for light emitting device, light emitting device using the same, and method of forming silicon nitride layer for light emitting device 有权
标题翻译：用于发光器件的氮化硅层，使用该氮化硅的发光器件的发光器件以及用于形成发光器件的氮化硅层的方法
公开(公告)号：US08222055B2
公开(公告)日：2012-07-17
申请号：US12613869
申请日：2009-11-06
申请人： Tae Youb Kim , Nae Man Park , Kyung Hyun Kim , Gun Yong Sung
发明人： Tae Youb Kim , Nae Man Park , Kyung Hyun Kim , Gun Yong Sung
IPC分类号： H01L21/00
CPC分类号： H01L33/34 , C23C16/30 , C23C16/345 , H01L33/08 , H01L33/18 , Y10S977/773
摘要： Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.
摘要翻译：提供了一种用于发光器件的氮化硅层，使用该氮化硅的发光器件以及用于形成发光器件的氮化硅层的方法。发光器件的氮化硅层包括在氮化硅衬底中形成的氮化硅衬底和硅纳米晶体。由氮化硅层制造的发光器件具有良好的发光效率，并且在包括短波长蓝色/紫色区域和近红外区域的可见区域中发光。

7. 发明授权

US08053751B2 Phase-change semiconductor device and methods of manufacturing the same 有权
标题翻译：相变半导体器件及其制造方法
公开(公告)号：US08053751B2
公开(公告)日：2011-11-08
申请号：US12591531
申请日：2009-11-23
申请人： Tae-Won Kim , Yong-Sun Ko , Ki-Jong Park , Kyung-Hyun Kim
发明人： Tae-Won Kim , Yong-Sun Ko , Ki-Jong Park , Kyung-Hyun Kim
IPC分类号： H01L21/4763
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： In a phase-change semiconductor device and methods of manufacturing the same, an example method may include forming a metal layer pattern on a substrate, the metal layer pattern including an opening that exposes a portion of the substrate, forming an etch stop layer on the metal layer pattern, a sidewall of the opening and the exposed portion of the substrate, the etch stop layer formed with a thickness less than an upper thickness threshold, and reducing at least a portion of the etch stop layer, the reduced portion of the etch stop layer forming an electrical connection with the substrate.
摘要翻译：在相变半导体器件及其制造方法中，示例性方法可以包括在衬底上形成金属层图案，金属层图案包括露出衬底的一部分的开口，在其上形成蚀刻停止层金属层图案，开口的侧壁和衬底的暴露部分，蚀刻停止层形成为具有小于上部厚度阈值的厚度，以及减少至少一部分蚀刻停止层，蚀刻部分的蚀刻停止层与基底形成电连接。

8. 发明授权

US08048809B2 Polishing method using chemical mechanical slurry composition 有权
标题翻译：抛光方法采用化学机械浆料组成
公开(公告)号：US08048809B2
公开(公告)日：2011-11-01
申请号：US11898850
申请日：2007-09-17
申请人： Hyo-Jin Lee , Kyung-Hyun Kim , Yong-Sun Ko
发明人： Hyo-Jin Lee , Kyung-Hyun Kim , Yong-Sun Ko
IPC分类号： H01L21/302
CPC分类号： H01L21/7684 , C09G1/02 , C09K3/1463 , H01L21/28123 , H01L21/3212
摘要： A slurry composition includes about 4.25 to about 18.5 weight percent of an abrasive, about 80 to about 95 weight percent of deionized water, and about 0.05 to about 1.5 weight percent of an additive. The slurry composition may further include a surfactant. In a polishing method using the slurry composition, a polysilicon layer may be rapidly polished, and also dishing and erosion of the polysilicon layer may be suppressed.
摘要翻译：浆料组合物包括约4.25至约18.5重量％的研磨剂，约80至约95重量％的去离子水和约0.05至约1.5重量％的添加剂。浆料组合物还可以包括表面活性剂。在使用浆料组合物的抛光方法中，可以快速抛光多晶硅层，并且可以抑制多晶硅层的凹陷和侵蚀。

9. 发明申请

US20110136691A1 GOLD-SILVER ALLOY NANOPARTICLE CHIP, METHOD OF FABRICATING THE SAME AND METHOD OF DETECTING MICROORGANISMS USING THE SAME 审中-公开
标题翻译：金银合金纳米线芯片，其制造方法和使用该方法检测微生物的方法
公开(公告)号：US20110136691A1
公开(公告)日：2011-06-09
申请号：US12878362
申请日：2010-09-09
申请人： Wan Joong KIM , Bong Kyu Kim , Gun Yong Sung , Chul Huh , Hyun Sung Ko , Jong Cheol Hong , Kyung Hyun Kim , Chil Seong Ah
发明人： Wan Joong KIM , Bong Kyu Kim , Gun Yong Sung , Chul Huh , Hyun Sung Ko , Jong Cheol Hong , Kyung Hyun Kim , Chil Seong Ah
IPC分类号： C40B30/10 , C40B40/18 , C40B50/14
CPC分类号： C12Q1/04 , B01J2219/00648 , B82Y30/00 , C02F2209/36
摘要： Provided are a gold-silver alloy nanoparticle chip, a method of fabricating the same and a method of detecting microorganisms using the same. The gold-silver alloy nanoparticle chip includes a hydrophilized glass substrate, a self-assembled monolayer formed on the glass substrate, and gold-silver alloy nanoparticles fixed on the self-assembled monolayer. The gold-silver alloy nanoparticle chip having such a structure enables microorganisms in a water purifier and tap water to be readily detected and enables detection efficiency to be enhanced.
摘要翻译：提供一种金 - 银合金纳米颗粒，其制造方法和使用其的微生物检测方法。金 - 银合金纳米颗粒芯片包括亲水化玻璃基板，在玻璃基板上形成的自组装单层和固定在自组装单层上的金 - 银合金纳米颗粒。具有这种结构的金 - 银合金纳米颗粒芯片能够容易地检测净水器和自来水中的微生物，并且能够提高检测效率。

10. 发明申请

US20110136216A1 DIAGNOSTIC KIT FOR RESPIRATORY DISEASE 审中-公开
标题翻译：用于呼吸道疾病的诊断用具
公开(公告)号：US20110136216A1
公开(公告)日：2011-06-09
申请号：US12902442
申请日：2010-10-12
申请人： Kyung-Hyun KIM , Chul Huh , Chil-Seong Ah , Gun-Yong Sung
发明人： Kyung-Hyun KIM , Chul Huh , Chil-Seong Ah , Gun-Yong Sung
IPC分类号： C12M1/34
CPC分类号： G01N33/54366 , B01L3/5027 , G01N33/56983 , G01N2800/12
摘要： The present invention relates to a diagnostic kit for a respiratory disease that enables a preprocessing process with respect to a sample to be performed within a diagnostic kit when diagnosing respiratory disease using the diagnostic kit, and thereby enables all the operations starting from collecting the sample to verifying a diagnosis result to be automatically performed within the diagnostic kit. The diagnostic kit for a respiratory disease may perform a field diagnosis at anywhere without being restricted to a specific location, and even a general user may also easily obtain an accurate diagnosis result.
摘要翻译：本发明涉及一种用于呼吸疾病的诊断试剂盒，其能够使用诊断试剂盒诊断呼吸系统疾病时能够在诊断试剂盒内进行关于样品的预处理过程，从而使从收集样品开始的所有操作验证诊断结果在诊断套件内自动执行。用于呼吸系统疾病的诊断套件可以在任何地方执行现场诊断，而不限于特定位置，甚至一般用户也可以容易地获得准确的诊断结果。

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