专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07671377B2 Silicon based light emitting diode 有权
标题翻译：硅基发光二极管
公开(公告)号：US07671377B2
公开(公告)日：2010-03-02
申请号：US11720987
申请日：2005-11-14
申请人： Tae-Youb Kim , Nae-Man Park , Kyung-Hyun Kim , Gun-Yong Sung
发明人： Tae-Youb Kim , Nae-Man Park , Kyung-Hyun Kim , Gun-Yong Sung
IPC分类号： H01L33/00 , H01L29/06
CPC分类号： H01L33/465 , H01L33/34 , H01L33/38
摘要： Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.
摘要翻译：提供了包括分布式布拉格反射器（DBR），n型掺杂层和p型衬底结构的高效硅基发光二极管（LED）。硅基LED包括：具有p型台面基板结构的基板; 活性层，其形成在所述基材上并具有与所述第一表面相对的第一表面和第二表面; 面向有源层的第一表面的第一反射层; 第二反射层，其位于p型衬底结构的任一侧并面向有源层的第二表面; 夹在有源层和第一反射层之间的n型掺杂层; 电连接到所述n型掺杂层的第一电极; 以及与p型基板结构电连接的第二电极。

2. 发明申请

US20090242913A1 SILICON BASED LIGHT EMITTING DIODE 有权
标题翻译：硅基发光二极管
公开(公告)号：US20090242913A1
公开(公告)日：2009-10-01
申请号：US11720987
申请日：2005-11-14
申请人： Tae-Youb Kim , Nae-Man Park , Kyung-Hyun Kim , Gun-Yong Sung
发明人： Tae-Youb Kim , Nae-Man Park , Kyung-Hyun Kim , Gun-Yong Sung
IPC分类号： H01L33/00
CPC分类号： H01L33/465 , H01L33/34 , H01L33/38
摘要： Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.
摘要翻译：提供了包括分布式布拉格反射器（DBR），n型掺杂层和p型衬底结构的高效硅基发光二极管（LED）。硅基LED包括：具有p型台面基板结构的基板; 活性层，其形成在所述基材上并具有与所述第一表面相对的第一表面和第二表面; 面向有源层的第一表面的第一反射层; 第二反射层，其位于p型衬底结构的任一侧并面向有源层的第二表面; 夹在有源层和第一反射层之间的n型掺杂层; 电连接到所述n型掺杂层的第一电极; 以及与p型基板结构电连接的第二电极。

3. 发明授权

US07982231B2 Silicon-based light emitting diode using side reflecting mirror 有权
标题翻译：硅基发光二极管采用侧面反射镜
公开(公告)号：US07982231B2
公开(公告)日：2011-07-19
申请号：US12096751
申请日：2006-04-25
申请人： Tae-Youb Kim , Nae-Man Park , Gun-Yong Sung , Jong-Heon Yang
发明人： Tae-Youb Kim , Nae-Man Park , Gun-Yong Sung , Jong-Heon Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/06 , H01L33/10 , H01L33/18 , H01L33/34 , H01L33/60
摘要： A silicon light emitting diode capable of effectively utilizing light radiated toward the lateral side of a substrate by including a side reflecting mirror is provided. The silicon-based light emitting diode includes a p-type silicon substrate having a plurality of grooves, a light emitting diode layer formed on each of the grooves of the silicon substrate, the light emitting diode layer including an active layer, an n-type doped layer, and a transparent electrode layer, and a metal electrode including a lower metal electrode formed on the bottom surface of the p-type silicon substrate and an upper metal electrode formed on the top surface of the transparent electrode layer. The lateral surface of each of the grooves is separated from the light emitting diode layer and used as a reflecting mirror. The lateral surface is referred to as the side reflecting mirror.
摘要翻译：提供能够有效地利用通过包括侧反射镜朝向衬底的侧面辐射的光的硅发光二极管。硅基发光二极管包括具有多个沟槽的p型硅衬底，形成在硅衬底的每个沟槽上的发光二极管层，发光二极管层包括有源层，n型掺杂层和透明电极层，以及包含形成在p型硅衬底的底表面上的下金属电极的金属电极和形成在透明电极层的顶表面上的上金属电极。每个凹槽的侧表面与发光二极管层分离并用作反射镜。侧面被称为侧面反射镜。

4. 发明申请

US20080290360A1 Silicon-Based Light Emitting Diode Using Side Reflecting Mirror 有权
标题翻译：使用侧反射镜的硅基发光二极管
公开(公告)号：US20080290360A1
公开(公告)日：2008-11-27
申请号：US12096751
申请日：2006-04-25
申请人： Tae-Youb Kim , Nae-Man Park , Gun-Yong Sung , Jong-Heon Yang
发明人： Tae-Youb Kim , Nae-Man Park , Gun-Yong Sung , Jong-Heon Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/06 , H01L33/10 , H01L33/18 , H01L33/34 , H01L33/60
摘要： A silicon light emitting diode capable of effectively utilizing light radiated toward the lateral side of a substrate by including a side reflecting mirror is provided. The silicon-based light emitting diode includes a p-type silicon substrate having a plurality of grooves, a light emitting diode layer formed on each of the grooves of the silicon substrate, the light emitting diode layer including an active layer, an n-type doped layer, and a transparent electrode layer, and a metal electrode including a lower metal electrode formed on the bottom surface of the p-type silicon substrate and an upper metal electrode formed on the top surface of the transparent electrode layer. The lateral surface of each of the grooves is separated from the light emitting diode layer and used as a reflecting mirror The lateral surface is referred to as the side reflecting mirror.
摘要翻译：提供能够有效地利用通过包括侧反射镜朝向衬底的侧面辐射的光的硅发光二极管。硅基发光二极管包括具有多个沟槽的p型硅衬底，形成在硅衬底的每个沟槽上的发光二极管层，发光二极管层包括有源层，n型掺杂层和透明电极层，以及包含形成在p型硅衬底的底表面上的下金属电极的金属电极和形成在透明电极层的顶表面上的上金属电极。每个凹槽的侧表面与发光二极管层分离并用作反射镜。该侧表面被称为侧反射镜。

5. 发明授权

US07608853B2 Semiconductor light emitting diode that uses silicon nano dot and method of manufacturing the same 有权
标题翻译：使用硅纳米点的半导体发光二极管及其制造方法
公开(公告)号：US07608853B2
公开(公告)日：2009-10-27
申请号：US12278331
申请日：2008-06-27
申请人： Chul Huh , Rae-Man Park , Jae-Heon Shin , Kyung-Hyun Kim , Tae-Youb Kim , Kwan-Sik Cho , Gun-Yong Sung
发明人： Chul Huh , Rae-Man Park , Jae-Heon Shin , Kyung-Hyun Kim , Tae-Youb Kim , Kwan-Sik Cho , Gun-Yong Sung
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/22 , H01L33/00 , H01L21/00 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： H01L33/34 , B82Y20/00 , H01L33/18 , Y10S438/962 , Y10S977/773 , Y10S977/774
摘要： Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that includes a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer.
摘要翻译：提供了使用硅纳米点的半导体发光二极管及其制造方法。半导体发光二极管包括发光的发光层; 形成在发光层上的空穴注入层; 形成在所述发光层上以与所述空穴注入层相对的电子注入层; 包含金属纳米点并形成在电子注入层上的金属层; 和形成在金属层上的透明导电电极。使用包含硅纳米点的无定形氮化硅作为发光层。

6. 发明申请

US20090032836A1 SEMICONDUCTOR LIGHT EMITTING DIODE THAT USES SILICON NANO DOT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：使用硅纳米管的半导体发光二极管及其制造方法
公开(公告)号：US20090032836A1
公开(公告)日：2009-02-05
申请号：US12278331
申请日：2008-06-27
申请人： Chul Huh , Rae-Man Park , Jae-Heon Shin , Kyung-Hyun Kim , Tae-Youb Kim , Kwan-Sik Cho , Gun-Yong Sung
发明人： Chul Huh , Rae-Man Park , Jae-Heon Shin , Kyung-Hyun Kim , Tae-Youb Kim , Kwan-Sik Cho , Gun-Yong Sung
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/34 , B82Y20/00 , H01L33/18 , Y10S438/962 , Y10S977/773 , Y10S977/774
摘要： Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that comprises a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer.
摘要翻译：提供了使用硅纳米点的半导体发光二极管及其制造方法。半导体发光二极管包括发光的发光层; 形成在发光层上的空穴注入层; 形成在所述发光层上以与所述空穴注入层相对的电子注入层; 金属层，其包含金属纳米点，并形成在电子注入层上; 和形成在金属层上的透明导电电极。使用包含硅纳米点的无定形氮化硅作为发光层。

7. 发明授权

US08119430B2 Method of manufacturing semiconductor nanowire sensor device and semiconductor nanowire sensor device manufactured according to the method 有权
标题翻译：根据该方法制造半导体纳米线传感器器件和半导体纳米线传感器器件的方法
公开(公告)号：US08119430B2
公开(公告)日：2012-02-21
申请号：US12494846
申请日：2009-06-30
申请人： Chan-Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Chil-Seong Ah , An-Soon Kim , Tae-Youb Kim , Gun-Yong Sung , Seon-Hee Park
发明人： Chan-Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Chil-Seong Ah , An-Soon Kim , Tae-Youb Kim , Gun-Yong Sung , Seon-Hee Park
IPC分类号： H01L21/00
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y15/00 , G01N27/127 , H01L29/0673 , H01L29/66439 , H01L29/772 , Y10S977/959
摘要： Provided are a method of manufacturing a semiconductor nanowire sensor device and a semiconductor nanowire sensor device manufactured according to the method. The method includes preparing a first conductive type single crystal semiconductor substrate, forming a line-shaped first conductive type single crystal pattern from the first conductive type single crystal semiconductor substrate, forming second conductive type epitaxial patterns on both sidewalls of the first conductive type single crystal pattern, and forming source and drain electrodes at both ends of the second conductive type epitaxial patterns.
摘要翻译：提供一种制造根据该方法制造的半导体纳米线传感器装置和半导体纳米线传感器装置的方法。该方法包括：制备第一导电型单晶半导体衬底，从第一导电型单晶半导体衬底形成线状第一导电型单晶图案，在第一导电型单晶体的两个侧壁上形成第二导电型外延图案图案，并且在第二导电型外延图案的两端形成源电极和漏电极。

8. 发明申请

US20110136216A1 DIAGNOSTIC KIT FOR RESPIRATORY DISEASE 审中-公开
标题翻译：用于呼吸道疾病的诊断用具
公开(公告)号：US20110136216A1
公开(公告)日：2011-06-09
申请号：US12902442
申请日：2010-10-12
申请人： Kyung-Hyun KIM , Chul Huh , Chil-Seong Ah , Gun-Yong Sung
发明人： Kyung-Hyun KIM , Chul Huh , Chil-Seong Ah , Gun-Yong Sung
IPC分类号： C12M1/34
CPC分类号： G01N33/54366 , B01L3/5027 , G01N33/56983 , G01N2800/12
摘要： The present invention relates to a diagnostic kit for a respiratory disease that enables a preprocessing process with respect to a sample to be performed within a diagnostic kit when diagnosing respiratory disease using the diagnostic kit, and thereby enables all the operations starting from collecting the sample to verifying a diagnosis result to be automatically performed within the diagnostic kit. The diagnostic kit for a respiratory disease may perform a field diagnosis at anywhere without being restricted to a specific location, and even a general user may also easily obtain an accurate diagnosis result.
摘要翻译：本发明涉及一种用于呼吸疾病的诊断试剂盒，其能够使用诊断试剂盒诊断呼吸系统疾病时能够在诊断试剂盒内进行关于样品的预处理过程，从而使从收集样品开始的所有操作验证诊断结果在诊断套件内自动执行。用于呼吸系统疾病的诊断套件可以在任何地方执行现场诊断，而不限于特定位置，甚至一般用户也可以容易地获得准确的诊断结果。

9. 发明申请

US20100328774A1 RESONANT REFLECTIVE FILTER AND BIOSENSOR INCLUDING THE SAME 审中-公开
标题翻译：共振反射滤光片和生物传感器，包括它们
公开(公告)号：US20100328774A1
公开(公告)日：2010-12-30
申请号：US12517773
申请日：2007-12-05
申请人： Jongcheol Hong , Jaeheon Shin , Kyung-Hyun Kim , Chul Huh , Gun-Yong Sung
发明人： Jongcheol Hong , Jaeheon Shin , Kyung-Hyun Kim , Chul Huh , Gun-Yong Sung
IPC分类号： G02B5/28 , G02B5/18
CPC分类号： G02B5/26 , G01N21/7743 , G02F2201/307
摘要： Provided is a resonant reflective filter including a substrate and a grating layer, wherein the substrate is formed of a material having a lower reflective index than that of a material forming the grating layer. Thus, the resonant reflective filter can form a resonant spectrum having good symmetry and a sharp shape. Accordingly, the resonant reflective filter can have improved sensitivity and can be applied to optical systems that require a small linewidth.
摘要翻译：提供了一种包括基板和光栅层的谐振反射滤光器，其中基板由具有比形成光栅层的材料的反射率低的材料形成。因此，谐振反射滤光器可以形成具有良好对称性和锐利形状的共振光谱。因此，谐振反射滤波器可以具有改进的灵敏度，并且可以应用于需要小线宽的光学系统。

10. 发明申请

US20110018006A1 MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE HAVING EMITTING LAYER INCLUDING SILICON NANO-DOT, SEMICONDUCTOR LIGHT-EMITTING DIODE ARRAY INCLUDING THE MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE, AND METHOD OF FABRICATING THE MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE 审中-公开
标题翻译：具有发射层的微尺寸半导体发光二极管，包括硅纳米管，半导体发光二极管阵列，包括微尺寸半导体发光二极管，以及制造微尺寸半导体发光二极管的方法
公开(公告)号：US20110018006A1
公开(公告)日：2011-01-27
申请号：US12514577
申请日：2007-10-31
申请人： Chul Huh , Jaeheon Shin , Kyung-Hyun Kim , JongCheol Hong , Gun-Yong Sung
发明人： Chul Huh , Jaeheon Shin , Kyung-Hyun Kim , JongCheol Hong , Gun-Yong Sung
IPC分类号： H01L33/08 , H01L33/42 , H01L33/00
CPC分类号： H01L33/34 , H01L25/0753 , H01L33/346 , H01L2224/18 , H01L2924/0002 , H01L2924/00
摘要： A micro-sized semiconductor light-emitting diode includes an emission material layer formed on a silicon substrate, and including a silicon nano-dot; a hole injecting layer and an electron injecting layer that face each other, wherein the hole injecting layer and an electron injecting layer are formed between the emission material layer; a transparent conductive electrode layer formed on the electron injecting layer; and a first electrode and a second electrode that respectively inject a current in the hole injecting layer and the transparent conductive electrode layer from the outside.
摘要翻译：微型半导体发光二极管包括形成在硅衬底上并包括硅纳米点的发射材料层; 空穴注入层和电子注入层，其中，空穴注入层和电子注入层形成在发光材料层之间; 形成在电子注入层上的透明导电电极层; 以及分别从外部向空穴注入层和透明导电电极层注入电流的第一电极和第二电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式