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1. 发明申请

US20090242913A1 SILICON BASED LIGHT EMITTING DIODE 有权
标题翻译：硅基发光二极管
公开(公告)号：US20090242913A1
公开(公告)日：2009-10-01
申请号：US11720987
申请日：2005-11-14
申请人： Tae-Youb Kim , Nae-Man Park , Kyung-Hyun Kim , Gun-Yong Sung
发明人： Tae-Youb Kim , Nae-Man Park , Kyung-Hyun Kim , Gun-Yong Sung
IPC分类号： H01L33/00
CPC分类号： H01L33/465 , H01L33/34 , H01L33/38
摘要： Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.
摘要翻译：提供了包括分布式布拉格反射器（DBR），n型掺杂层和p型衬底结构的高效硅基发光二极管（LED）。硅基LED包括：具有p型台面基板结构的基板; 活性层，其形成在所述基材上并具有与所述第一表面相对的第一表面和第二表面; 面向有源层的第一表面的第一反射层; 第二反射层，其位于p型衬底结构的任一侧并面向有源层的第二表面; 夹在有源层和第一反射层之间的n型掺杂层; 电连接到所述n型掺杂层的第一电极; 以及与p型基板结构电连接的第二电极。

2. 发明授权

US07671377B2 Silicon based light emitting diode 有权
标题翻译：硅基发光二极管
公开(公告)号：US07671377B2
公开(公告)日：2010-03-02
申请号：US11720987
申请日：2005-11-14
申请人： Tae-Youb Kim , Nae-Man Park , Kyung-Hyun Kim , Gun-Yong Sung
发明人： Tae-Youb Kim , Nae-Man Park , Kyung-Hyun Kim , Gun-Yong Sung
IPC分类号： H01L33/00 , H01L29/06
CPC分类号： H01L33/465 , H01L33/34 , H01L33/38
摘要： Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.
摘要翻译：提供了包括分布式布拉格反射器（DBR），n型掺杂层和p型衬底结构的高效硅基发光二极管（LED）。硅基LED包括：具有p型台面基板结构的基板; 活性层，其形成在所述基材上并具有与所述第一表面相对的第一表面和第二表面; 面向有源层的第一表面的第一反射层; 第二反射层，其位于p型衬底结构的任一侧并面向有源层的第二表面; 夹在有源层和第一反射层之间的n型掺杂层; 电连接到所述n型掺杂层的第一电极; 以及与p型基板结构电连接的第二电极。

3. 发明申请

US20080290360A1 Silicon-Based Light Emitting Diode Using Side Reflecting Mirror 有权
标题翻译：使用侧反射镜的硅基发光二极管
公开(公告)号：US20080290360A1
公开(公告)日：2008-11-27
申请号：US12096751
申请日：2006-04-25
申请人： Tae-Youb Kim , Nae-Man Park , Gun-Yong Sung , Jong-Heon Yang
发明人： Tae-Youb Kim , Nae-Man Park , Gun-Yong Sung , Jong-Heon Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/06 , H01L33/10 , H01L33/18 , H01L33/34 , H01L33/60
摘要： A silicon light emitting diode capable of effectively utilizing light radiated toward the lateral side of a substrate by including a side reflecting mirror is provided. The silicon-based light emitting diode includes a p-type silicon substrate having a plurality of grooves, a light emitting diode layer formed on each of the grooves of the silicon substrate, the light emitting diode layer including an active layer, an n-type doped layer, and a transparent electrode layer, and a metal electrode including a lower metal electrode formed on the bottom surface of the p-type silicon substrate and an upper metal electrode formed on the top surface of the transparent electrode layer. The lateral surface of each of the grooves is separated from the light emitting diode layer and used as a reflecting mirror The lateral surface is referred to as the side reflecting mirror.
摘要翻译：提供能够有效地利用通过包括侧反射镜朝向衬底的侧面辐射的光的硅发光二极管。硅基发光二极管包括具有多个沟槽的p型硅衬底，形成在硅衬底的每个沟槽上的发光二极管层，发光二极管层包括有源层，n型掺杂层和透明电极层，以及包含形成在p型硅衬底的底表面上的下金属电极的金属电极和形成在透明电极层的顶表面上的上金属电极。每个凹槽的侧表面与发光二极管层分离并用作反射镜。该侧表面被称为侧反射镜。

4. 发明授权

US07982231B2 Silicon-based light emitting diode using side reflecting mirror 有权
标题翻译：硅基发光二极管采用侧面反射镜
公开(公告)号：US07982231B2
公开(公告)日：2011-07-19
申请号：US12096751
申请日：2006-04-25
申请人： Tae-Youb Kim , Nae-Man Park , Gun-Yong Sung , Jong-Heon Yang
发明人： Tae-Youb Kim , Nae-Man Park , Gun-Yong Sung , Jong-Heon Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/06 , H01L33/10 , H01L33/18 , H01L33/34 , H01L33/60
摘要： A silicon light emitting diode capable of effectively utilizing light radiated toward the lateral side of a substrate by including a side reflecting mirror is provided. The silicon-based light emitting diode includes a p-type silicon substrate having a plurality of grooves, a light emitting diode layer formed on each of the grooves of the silicon substrate, the light emitting diode layer including an active layer, an n-type doped layer, and a transparent electrode layer, and a metal electrode including a lower metal electrode formed on the bottom surface of the p-type silicon substrate and an upper metal electrode formed on the top surface of the transparent electrode layer. The lateral surface of each of the grooves is separated from the light emitting diode layer and used as a reflecting mirror. The lateral surface is referred to as the side reflecting mirror.
摘要翻译：提供能够有效地利用通过包括侧反射镜朝向衬底的侧面辐射的光的硅发光二极管。硅基发光二极管包括具有多个沟槽的p型硅衬底，形成在硅衬底的每个沟槽上的发光二极管层，发光二极管层包括有源层，n型掺杂层和透明电极层，以及包含形成在p型硅衬底的底表面上的下金属电极的金属电极和形成在透明电极层的顶表面上的上金属电极。每个凹槽的侧表面与发光二极管层分离并用作反射镜。侧面被称为侧面反射镜。

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