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    • 2. 发明申请
    • SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD AND DESIGNING METHOD THEREOF, AND ELECTRONIC DEVICE
    • 固态成像装置,制造方法及其设计方法及电子装置
    • US20110108705A1
    • 2011-05-12
    • US12915638
    • 2010-10-29
    • Kyoko IzuhaHiromi OkazakiYoshiaki Kitano
    • Kyoko IzuhaHiromi OkazakiYoshiaki Kitano
    • H01L27/146H01L31/0232H01L31/18
    • H01L31/0232H01L27/14621H01L27/14632H01L27/14645H01L27/14685H01L27/14687H01L27/14689
    • A solid-state imaging device includes: a semiconductor substrate that includes a photodiode separately provided for each of pixels disposed in a matrix on a light-receiving surface; a first insulating film formed on the semiconductor substrate so as to cover multilayer wiring formed on and in contact with the semiconductor substrate, wherein the first insulating film is formed using material of a first refractive index lower than a refractive index of the semiconductor substrate for at least bottom surface and top surface portions of the first insulating film; a second insulating film of a second refractive index higher than the first refractive index formed on the first insulating film; a third insulating film of a third refractive index higher than the second refractive index formed on the second insulating film; and a color filter formed on the third insulating film in a corresponding manner with each pixel so as to transmit light in a wavelength region of red, green, or blue.
    • 一种固态成像装置,包括:半导体基板,包括:分别设置在光接收表面上的矩阵中设置的每个像素的光电二极管; 第一绝缘膜,形成在半导体衬底上,以便覆盖在半导体衬底上形成并与其接触的多层布线,其中第一绝缘膜使用低于半导体衬底的折射率的第一折射率的材料形成, 所述第一绝缘膜的最小底表面和顶表面部分; 第二绝缘膜,其具有高于形成在所述第一绝缘膜上的所述第一折射率的第二折射率; 第三绝缘膜,其具有高于形成在所述第二绝缘膜上的所述第二折射率的第三折射率; 以及以与每个像素相应的方式形成在第三绝缘膜上的滤色器,以便透射红色,绿色或蓝色的波长区域中的光。
    • 5. 发明授权
    • Method of determining photo mask, method of manufacturing semiconductor device, and computer program product
    • 确定光掩模的方法,制造半导体器件的方法以及计算机程序产品
    • US07925090B2
    • 2011-04-12
    • US11601797
    • 2006-11-20
    • Toshiya KotaniKazuya FukuharaKyoko Izuha
    • Toshiya KotaniKazuya FukuharaKyoko Izuha
    • G06K9/34
    • G03F7/70441
    • A method of determining a photo mask, includes specifying a mask pattern for a photo mask for a first exposure apparatus, specifying a plurality of exposure conditions allowed to be set for a second exposure apparatus, predicting a projection image of the mask pattern to be projected on a substrate by the second exposure apparatus, for each of the exposure conditions, predicting a processed pattern to be formed on a substrate surface on the basis of the projection image, for each of the exposure conditions, determining whether or not the processed pattern meets a predetermined condition for each of the exposure conditions, and determining that the photo mask is applicable to the second exposure apparatus if the processed pattern meets the predetermined condition for at least one of the exposure conditions.
    • 一种确定光掩模的方法包括:为第一曝光装置指定用于光掩模的掩模图案,指定允许为第二曝光装置设置的多个曝光条件,预测要投影的掩模图案的投影图像 在第二曝光装置的基板上,对于每个曝光条件,对于每个曝光条件,基于投影图像预测要在基板表面上形成的处理图案,确定处理图案是否满足 对于每个曝光条件的预定条件,并且如果处理的图案满足至少一个曝光条件的预定条件,则确定光掩模适用于第二曝光装置。
    • 7. 发明申请
    • Method of determining photo mask, method of manufacturing semiconductor device, and computer program product
    • 确定光掩模的方法,制造半导体器件的方法以及计算机程序产品
    • US20070130560A1
    • 2007-06-07
    • US11601797
    • 2006-11-20
    • Toshiya KotaniKazuya FukuharaKyoko Izuha
    • Toshiya KotaniKazuya FukuharaKyoko Izuha
    • G06F17/50
    • G03F7/70441
    • A method of determining a photo mask, includes specifying a mask pattern for a photo mask for a first exposure apparatus, specifying a plurality of exposure conditions allowed to be set for a second exposure apparatus, predicting a projection image of the mask pattern to be projected on a substrate by the second exposure apparatus, for each of the exposure conditions, predicting a processed pattern to be formed on a substrate surface on the basis of the projection image, for each of the exposure conditions, determining whether or not the processed pattern meets a predetermined condition for each of the exposure conditions, and determining that the photo mask is applicable to the second exposure apparatus if the processed pattern meets the predetermined condition for at least one of the exposure conditions.
    • 一种确定光掩模的方法包括:为第一曝光装置指定用于光掩模的掩模图案,指定允许为第二曝光装置设置的多个曝光条件,预测要投影的掩模图案的投影图像 在第二曝光装置的基板上,对于每个曝光条件,对于每个曝光条件,基于投影图像预测要在基板表面上形成的处理图案,确定处理图案是否满足 对于每个曝光条件的预定条件,并且如果处理的图案满足至少一个曝光条件的预定条件,则确定光掩模适用于第二曝光装置。