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1. 发明授权

US08847135B2 Solid-state imaging device, driving method thereof and electronic apparatus 有权
标题翻译：固态成像装置，其驱动方法和电子装置
公开(公告)号：US08847135B2
公开(公告)日：2014-09-30
申请号：US13185170
申请日：2011-07-18
申请人： Kyoko Izuha , Kouichi Harada
发明人： Kyoko Izuha , Kouichi Harada
IPC分类号： H01L27/00 , H01L27/146
CPC分类号： H04N5/3698 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14625 , H01L27/14667
摘要： A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.
摘要翻译：一种固态成像装置，包括：半导体衬底，其包括根据以矩阵形状排列的像素分割并形成有光电转换部的受光面; 在从所述像素中选择的像素的一部分中，在与所述光电转换部对应的光入射路径上形成在所述半导体基板上的电致变色膜，并且根据施加到所述电致变色膜的电压具有从第一透射率向第二透射率变化的透光率 ; 形成在电致变色膜下面的下电极; 以及形成在电致变色膜上方的上电极。

2. 发明申请

US20120025061A1 SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF AND ELECTRONIC APPARATUS 有权
标题翻译：固态成像装置，其驱动方法和电子装置
公开(公告)号：US20120025061A1
公开(公告)日：2012-02-02
申请号：US13185170
申请日：2011-07-18
申请人： Kyoko Izuha , Kouichi Harada
发明人： Kyoko Izuha , Kouichi Harada
IPC分类号： H01L27/146 , H01L31/0232
CPC分类号： H04N5/3698 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14625 , H01L27/14667
摘要： A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.
摘要翻译：一种固态成像装置，包括：半导体衬底，其包括根据以矩阵形状排列的像素分割并形成有光电转换部的受光面; 在从所述像素中选择的像素的一部分中，在与所述光电转换部对应的光入射路径上形成在所述半导体基板上的电致变色膜，并且根据施加到所述电致变色膜的电压具有从第一透射率向第二透射率变化的透光率 ; 形成在电致变色膜下面的下电极; 以及形成在电致变色膜上方的上电极。

3. 发明授权

US08754968B2 Solid-state imaging device and electronic equipment 有权
标题翻译：固态成像装置和电子设备
公开(公告)号：US08754968B2
公开(公告)日：2014-06-17
申请号：US13089539
申请日：2011-04-19
申请人： Kyoko Izuha , Kouichi Harada
发明人： Kyoko Izuha , Kouichi Harada
IPC分类号： H04N9/083
CPC分类号： H01L31/02162 , H01L27/14625 , H04N5/2254 , H04N5/35563 , H04N9/045 , H04N2209/045
摘要： A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels.
摘要翻译：固态成像装置包括：半导体衬底，其具有以形成在其上的光电二极管以矩阵排列的红色，绿色，蓝色和白色像素的受光面; 形成在半导体衬底上的彩色滤光器，分别以红色，绿色和蓝色像素的各个形成区域的光电二极管的光入射路径分别形成在红色，绿色和蓝色波长区域中的光; 以及在至少一些白色像素的形成区域中的光入射路径中的光入射路径中形成的光致变色膜，并且含有具有根据预定波长区域中的入射光强度而变化的光透射率的光致变色材料，其中光致变色膜的透光率的一半周期短于一帧，作为相对于所有像素读出像素中获得的像素信号的周期。

4. 发明申请

US20110285881A1 SOLID-STATE IMAGING DEVICE AND ELECTRONIC EQUIPMENT 有权
标题翻译：固态成像装置和电子设备
公开(公告)号：US20110285881A1
公开(公告)日：2011-11-24
申请号：US13089539
申请日：2011-04-19
申请人： Kyoko Izuha , Kouichi Harada
发明人： Kyoko Izuha , Kouichi Harada
IPC分类号： H04N9/07 , H01L31/0232 , H04N5/335
CPC分类号： H01L31/02162 , H01L27/14625 , H04N5/2254 , H04N5/35563 , H04N9/045 , H04N2209/045
摘要： A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels.
摘要翻译：固态成像装置包括：半导体衬底，其具有以形成在其上的光电二极管以矩阵排列的红色，绿色，蓝色和白色像素的受光面; 形成在半导体衬底上的彩色滤光器，分别以红色，绿色和蓝色像素的各个形成区域的光电二极管的光入射路径分别形成在红色，绿色和蓝色波长区域中的光; 以及在至少一些白色像素的形成区域中的光入射路径中的光入射路径中形成的光致变色膜，并且含有具有根据预定波长区域中的入射光强度而变化的光透射率的光致变色材料，其中光致变色膜的透光率的一半周期短于一帧，作为相对于所有像素读出像素中获得的像素信号的周期。

5. 发明申请

US20110242349A1 SOLID-STATE IMAGE CAPTURING DEVICE AND ELECTRONIC DEVICE 有权
标题翻译：固态图像捕获器件和电子器件
公开(公告)号：US20110242349A1
公开(公告)日：2011-10-06
申请号：US13049507
申请日：2011-03-16
申请人： Kyoko Izuha , Kouichi Harada
发明人： Kyoko Izuha , Kouichi Harada
IPC分类号： H04N5/228 , H04N5/335
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14685
摘要： A solid-state image capturing device includes: a semiconductor substrate having a photosensitive surface including a matrix of pixels as respective photoelectric converters; and a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance variable depending on the intensity of applied light in a predetermined wavelength range; wherein the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the pixels are read from all the pixels.
摘要翻译：固体摄像装置包括：具有包括作为各自的光电转换器的像素矩阵的光敏表面的半导体衬底; 以及光致变色膜，其配置在向各光电转换体施加光的光路上，所述光致变色膜由光致变色材料构成，所述光致变色材料的光透射率随所施加的光的强度在预定波长范围内变化; 其中所述透光率具有比从所述像素读取由所述像素产生的像素信号的一帧短的半值周期。

6. 发明授权

US08605175B2 Solid-state image capturing device including a photochromic film having a variable light transmittance, and electronic device including the solid-state image capturing device 有权
标题翻译：包括具有可变透光率的光致变色膜的固态图像捕获装置和包括固态图像捕获装置的电子装置
公开(公告)号：US08605175B2
公开(公告)日：2013-12-10
申请号：US13049507
申请日：2011-03-16
申请人： Kyoko Izuha , Kouichi Harada
发明人： Kyoko Izuha , Kouichi Harada
IPC分类号： H04N3/14 , H04N5/335 , H04N9/04 , H04N9/083
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14685
摘要： A solid-state image capturing device includes: a semiconductor substrate having a photosensitive surface including a matrix of pixels as respective photoelectric converters; and a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance variable depending on the intensity of applied light in a predetermined wavelength range; wherein the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the pixels are read from all the pixels.
摘要翻译：固体摄像装置包括：具有包括作为各自的光电转换器的像素矩阵的光敏表面的半导体衬底; 以及光致变色膜，其配置在向各光电转换体施加光的光路上，所述光致变色膜由光致变色材料构成，所述光致变色材料的光透射率随所施加的光的强度在预定波长范围内变化; 其中所述透光率具有比从所述像素读取由所述像素产生的像素信号的一帧短的半值周期。

7. 发明授权

US07936310B2 High-impedance substrate 有权
标题翻译：高阻抗衬底
公开(公告)号：US07936310B2
公开(公告)日：2011-05-03
申请号：US12175854
申请日：2008-07-18
申请人： Fumihiko Aiga , Seiichi Suenaga , Kouichi Harada , Tomohiro Suetsuna , Maki Yonetsu , Naoyuki Nakagawa , Tomoko Eguchi
发明人： Fumihiko Aiga , Seiichi Suenaga , Kouichi Harada , Tomohiro Suetsuna , Maki Yonetsu , Naoyuki Nakagawa , Tomoko Eguchi
IPC分类号： H01Q1/38 , H01Q15/02
CPC分类号： H01Q15/008
摘要： A high-impedance substrate is provided, which includes a metallic plate employed as a ground plane, a resonance circuit layer spaced away from the metallic plate by a distance “t”, the resonance circuit layer being provided with at least two resonance circuits having the same height and disposed side by side with a distance “g”, a connecting component connecting the resonance circuit with the metallic plate, and a magnetic material layer interposed between the metallic plate and the resonance circuit layer. The distance “t” between the metallic plate and the resonance circuit layer is confined within the range of 0.1 to 10 mm, the distance “g” between neighboring resonance circuits is confined within the range of 0.01 to 5 mm, the distance “h” between the magnetic material layer and the resonance circuit layer is confined within the range represented by the following inequality 1: g/2≦h≦t/2 inequality 1.
摘要翻译：提供了一种高阻抗衬底，其包括用作接地面的金属板，与金属板隔开距离“t”的谐振电路层，谐振电路层设置有至少两个具有并列配置有距离“g”，将谐振电路与金属板连接起来的连接部件以及介于金属板和谐振电路层之间的磁性体层。金属板和谐振电路层之间的距离“t”限制在0.1至10mm的范围内，相邻谐振电路之间的距离“g”限制在0.01至5mm的范围内，距离“h” 在磁性材料层和谐振电路层之间限制在由以下不等式1表示的范围内：g / 2＆nlE; h＆nlE; t / 2不等式1。

8. 发明授权

US07740939B2 Insulating magnetic metal particles and method for manufacturing insulating magnetic material 有权
标题翻译：绝缘磁性金属颗粒及制造绝缘磁性材料的方法
公开(公告)号：US07740939B2
公开(公告)日：2010-06-22
申请号：US11880521
申请日：2007-07-23
申请人： Kouichi Harada , Tomohiro Suetsuna , Seiichi Suenaga , Maki Yonetsu
发明人： Kouichi Harada , Tomohiro Suetsuna , Seiichi Suenaga , Maki Yonetsu
IPC分类号： B32B5/16 , B28B1/00 , B28B3/00 , C04B35/01 , C04B35/14 , C04B35/26
CPC分类号： H01F1/24 , B22F1/02 , B22F2998/00 , C22C2202/02 , H01F41/0246 , Y10T428/12181 , Y10T428/2991 , B22F1/0018
摘要： An insulating magnetic metal particle includes a magnetic metal particle containing at least one metal selected from the group consisting of Co, Fe, and Ni and having a diameter of 5 to 500 nm, a first inorganic insulating layer made of an oxide that covers the surface of the magnetic metal particle, and a second inorganic insulating layer made of an oxide that produces a eutectic crystal by reacting together with the first inorganic insulating layer at the time of heating them, the second inorganic insulating layer being coated on the first inorganic insulating layer. A thickness ratio of the second inorganic insulating layer with respect to the first inorganic insulating layer is set so that the first inorganic insulating layer remains on the surface of the magnetic metal particle after producing the eutectic crystal.
摘要翻译：绝缘磁性金属颗粒包括含有选自Co，Fe和Ni中的至少一种金属并且具有5至500nm直径的磁性金属颗粒，由覆盖该表面的氧化物制成的第一无机绝缘层的第二无机绝缘层和由第一无机绝缘层在第一无机绝缘层上涂覆的第二无机绝缘层，所述第二无机绝缘层由通过与第一无机绝缘层一起反应而产生共晶晶体的氧化物构成，。设定第二无机绝缘层相对于第一无机绝缘层的厚度比，使得第一无机绝缘层在产生共晶晶体之后保留在磁性金属颗粒的表面上。

9. 发明授权

US07719573B2 Device and method for processing photographic image data 有权
标题翻译：用于处理摄影图像数据的装置和方法
公开(公告)号：US07719573B2
公开(公告)日：2010-05-18
申请号：US10148838
申请日：2001-10-03
申请人： Kouichi Harada , Tomoo Mitsunaga , Seiji Kobayashi
发明人： Kouichi Harada , Tomoo Mitsunaga , Seiji Kobayashi
IPC分类号： H04N5/235 , G03B7/00
CPC分类号： H01L27/1485 , H01L27/1462 , H01L27/14812 , H04N5/235 , H04N5/35554 , H04N5/3728
摘要： Disclosed herein is a photographing device that includes a number of light-receiving elements, a number of vertical transfer registers, a first drive-voltage applying electrode, and a second drive-voltage applying electrode. The light-receiving elements are arranged in a horizontal direction and a vertical direction. The vertical transfer registers transfers the electric charges accumulated in the light-receiving elements in the vertical direction. The first drive-voltage applying electrode is arranged parallel to the vertical transfer registers, for applying a drive voltage to a specific one of the vertical transfer registers. The second drive-voltage applying electrode is arranged perpendicular to the vertical transfer registers, for applying a second drive voltage to the vertical transfer registers at the same time. The electric charges accumulated in the light-receiving elements are transferred to the vertical transfer registers, due to the voltage output from the first drive-voltage applying electrode or the second drive-voltage applying electrode, or the voltages output from both electrodes. Therefore, the light-receiving elements can have different sensitivities, and the photographing device can photograph dynamic scenes in a broad dynamic range.
摘要翻译：本文公开了一种拍摄装置，其包括多个光接收元件，多个垂直传送寄存器，第一驱动电压施加电极和第二驱动电压施加电极。光接收元件沿水平方向和垂直方向排列。垂直传送寄存器在垂直方向上传送累积在光接收元件中的电荷。第一驱动电压施加电极平行于垂直传送寄存器布置，用于将驱动电压施加到特定的一个垂直传送寄存器。第二驱动电压施加电极垂直于垂直传送寄存器布置，用于将第二驱动电压同时施加到垂直传送寄存器。由于从第一驱动电压施加电极或第二驱动电压施加电极输出的电压或从两个电极输出的电压，累积在光接收元件中的电荷被传送到垂直传送寄存器。因此，光接收元件可以具有不同的灵敏度，并且拍摄装置可以在宽动态范围内拍摄动态场景。

10. 发明申请

US20090242826A1 HIGH-FREQUENCY MAGNETIC MATERIAL AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：高频磁性材料及其制造方法
公开(公告)号：US20090242826A1
公开(公告)日：2009-10-01
申请号：US12406575
申请日：2009-03-18
申请人： Kouichi Harada , Tomohiro Suetsuna , Seiichi Suenaga
发明人： Kouichi Harada , Tomohiro Suetsuna , Seiichi Suenaga
IPC分类号： B32B5/16 , B22F3/02 , B22F1/00 , B22F1/02
CPC分类号： B22F1/02 , B22F1/0018 , B82Y30/00 , C22C2202/02 , H01F1/24 , H01F1/26 , H01F1/33 , H05K9/0083 , Y10T428/12007
摘要： To provide a high-frequency magnetic material having a superior radio wave absorption property in a high frequency region and a method of manufacturing the same. The high-frequency magnetic material and the method of manufacturing the same includes a magnetic substance containing metal nanoparticles, the metal nanoparticles are magnetic metals containing at least one kind of Fe, Co, and Ni, an average particle diameter of the metal nanoparticles is equal to or less than 200 nm, first clusters having network-like structures with continuous metal nanoparticles and the average diameter equal to or less than 10 μm are formed, second clusters having network-like structures with the continuous first clusters and the average diameter equal to or less than 100 μm are formed, and the entire magnetic substance has a network-like structure with the continuous second clusters.
摘要翻译：为了提供在高频区域具有优异的电波吸收特性的高频磁性材料及其制造方法。高频磁性材料及其制造方法包括含有金属纳米颗粒的磁性物质，金属纳米粒子是含有至少一种Fe，Co和Ni的磁性金属，金属纳米粒子的平均粒径相等形成具有连续金属纳米粒子的网状结构且平均直径等于或小于10μm的第一簇，具有连续第一簇的网状结构的第二簇和平均直径等于或小于100μm，并且整个磁性物质具有连续的第二簇的网状结构。

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