专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5714405A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5714405A
公开(公告)日：1998-02-03
申请号：US721240
申请日：1996-09-26
申请人： Kunihiro Tsubosaki , Michio Tanimoto , Kunihiko Nishi , Masahiro Ichitani , Shunji Koike , Kazunari Suzuki , Ryosuke Kimoto , Ichiro Anjoh , Taisei Jin , Akihiko Iwaya , Gen Murakami , Masamichi Ishihara , Junichi Arita
发明人： Kunihiro Tsubosaki , Michio Tanimoto , Kunihiko Nishi , Masahiro Ichitani , Shunji Koike , Kazunari Suzuki , Ryosuke Kimoto , Ichiro Anjoh , Taisei Jin , Akihiko Iwaya , Gen Murakami , Masamichi Ishihara , Junichi Arita
IPC分类号： H01L23/31 , H01L23/495 , H01L25/10 , H01L21/60
CPC分类号： H01L24/06 , H01L23/3107 , H01L23/3121 , H01L23/4951 , H01L24/05 , H01L24/49 , H01L25/105 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/06136 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48253 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/48724 , H01L2224/49113 , H01L2224/49171 , H01L2224/73215 , H01L2224/85424 , H01L2225/1029 , H01L24/45 , H01L24/48 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/1305 , H01L2924/181 , H01L2924/351 , Y10T29/49121
摘要： A semiconductor device having inner leads secured via insulating adhesive films to the principal surface of a semiconductor chip and electrically connected to the respective external terminals of the semiconductor chip. The semiconductor device that can be about the size of the chip is so configured that an outer lead is continuously extended from each inner lead up to the rear surface opposite to the principal surface of the semiconductor chip in order to hold the leads and an external device in conduction.
摘要翻译：一种半导体器件，其具有通过绝缘粘合剂膜固定到半导体芯片的主表面并与半导体芯片的各个外部端子电连接的内部引线。可以关于芯片尺寸的半导体器件被配置为使得外引线从每个内引线连续地延伸到与半导体芯片的主表面相对的后表面，以便保持引线和外部器件导通。

2. 发明授权

US5869888A Semiconductor device with lead structure on principal surface of chip 失效
标题翻译：芯片主表面具有导线结构的半导体器件
公开(公告)号：US5869888A
公开(公告)日：1999-02-09
申请号：US721339
申请日：1996-09-26
申请人： Kunihiro Tsubosaki , Michio Tanimoto , Kunihiko Nishi , Masahiro Ichitani , Shunji Koike , Kazunari Suzuki , Ryosuke Kimoto , Ichiro Anjoh , Taisei Jin , Akihiko Iwaya , Gen Murakami , Masamichi Ishihara , Junichi Arita
发明人： Kunihiro Tsubosaki , Michio Tanimoto , Kunihiko Nishi , Masahiro Ichitani , Shunji Koike , Kazunari Suzuki , Ryosuke Kimoto , Ichiro Anjoh , Taisei Jin , Akihiko Iwaya , Gen Murakami , Masamichi Ishihara , Junichi Arita
IPC分类号： H01L23/31 , H01L23/495 , H01L25/10 , H01L23/48
CPC分类号： H01L24/06 , H01L23/3107 , H01L23/3121 , H01L23/4951 , H01L24/05 , H01L24/49 , H01L25/105 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/06136 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48253 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/48724 , H01L2224/49113 , H01L2224/49171 , H01L2224/73215 , H01L2224/85424 , H01L2225/1029 , H01L24/45 , H01L24/48 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/1305 , H01L2924/181 , H01L2924/351 , Y10T29/49121
摘要： A semiconductor device having inner leads secured via insulating adhesive films to the principal surface of a semiconductor chip and electrically connected to the respective external terminals of the semiconductor chip. The semiconductor device that can be about the size of the chip is so configured that an outer lead is continuously extended from each inner lead up to the rear surface opposite to the principal surface of the semiconductor chip in order to hold the leads and an external device in conduction.
摘要翻译：一种半导体器件，其具有通过绝缘粘合剂膜固定到半导体芯片的主表面并与半导体芯片的各个外部端子电连接的内部引线。可以关于芯片尺寸的半导体器件被配置为使得外引线从每个内引线连续地延伸到与半导体芯片的主表面相对的后表面，以便保持引线和外部器件导通。

3. 发明授权

US5583375A Semiconductor device with lead structure within the planar area of the device 失效
标题翻译：具有引线结构的半导体器件在器件的平面区域内
公开(公告)号：US5583375A
公开(公告)日：1996-12-10
申请号：US990633
申请日：1992-12-14
申请人： Kunihiro Tsubosaki , Michio Tanimoto , Kunihiko Nishi , Masahiro Ichitani , Shunji Koike , Kazunari Suzuki , Ryosuke Kimoto , Ichiro Anjoh , Taisei Jin , Akihiko Iwaya , Gen Murakami , Masamichi Ishihara , Junichi Arita
发明人： Kunihiro Tsubosaki , Michio Tanimoto , Kunihiko Nishi , Masahiro Ichitani , Shunji Koike , Kazunari Suzuki , Ryosuke Kimoto , Ichiro Anjoh , Taisei Jin , Akihiko Iwaya , Gen Murakami , Masamichi Ishihara , Junichi Arita
IPC分类号： H01L23/31 , H01L23/495 , H01L25/10 , H01L23/48
CPC分类号： H01L24/06 , H01L23/3107 , H01L23/3121 , H01L23/4951 , H01L24/05 , H01L24/49 , H01L25/105 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/06136 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48253 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/48724 , H01L2224/49113 , H01L2224/49171 , H01L2224/73215 , H01L2224/85424 , H01L2225/1029 , H01L24/45 , H01L24/48 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/1305 , H01L2924/181 , H01L2924/351 , Y10T29/49121
摘要： A semiconductor device having inner leads secured via insulating adhesive films to the principal surface of a semiconductor chip and electrically connected to the respective external terminals of the semiconductor chip. The semiconductor device that can be about the size of the chip is so configured that an outer lead is continuously extended from each inner lead up to the rear surface opposite to the principal surface of the semiconductor chip in order to hold the leads and an external device in conduction.
摘要翻译：一种半导体器件，其具有通过绝缘粘合剂膜固定到半导体芯片的主表面并与半导体芯片的各个外部端子电连接的内部引线。可以关于芯片尺寸的半导体器件被配置为使得外引线从每个内引线连续地延伸到与半导体芯片的主表面相对的后表面，以便保持引线和外部器件导通。

4. 发明授权

US5198888A Semiconductor stacked device 失效
标题翻译：半导体堆叠器件
公开(公告)号：US5198888A
公开(公告)日：1993-03-30
申请号：US631154
申请日：1990-12-20
申请人： Toshio Sugano , Kohji Nagaoka , Seiichiro Tsukui , Yoshiaki Wakashima , Michio Tanimoto , Masayuki Watanabe , Suguru Sakaguchi , Kunihiko Nishi , Aizo Kaneda , Kohji Serizawa , Michiharu Honda , Tohru Yoshida , Takeshi Komaru , Atsushi Nakamura
发明人： Toshio Sugano , Kohji Nagaoka , Seiichiro Tsukui , Yoshiaki Wakashima , Michio Tanimoto , Masayuki Watanabe , Suguru Sakaguchi , Kunihiko Nishi , Aizo Kaneda , Kohji Serizawa , Michiharu Honda , Tohru Yoshida , Takeshi Komaru , Atsushi Nakamura
IPC分类号： G11C5/00 , H01L23/498 , H01L25/065 , H05K1/14 , H05K1/18 , H05K3/34 , H05K3/36
CPC分类号： G11C5/06 , G11C5/02 , H01L23/49805 , H01L25/0657 , H01L2224/16 , H01L2225/0651 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06579 , H01L2225/06596 , H01L2924/07811 , H01L2924/09701 , H05K1/144 , H05K1/182 , H05K3/3421 , H05K3/363
摘要： There is a trend to increase that area of a device requiring a memory of large capacity, which is occupied by a semiconductor memory. This trend obstructs reduction of the size of the device. The present invention contemplates to provide a memory which can have a high integration, a high density and a large capacity while minimizing the mounting area. In order to achieve this memory, the TAB (Tape Automated Bonding) of the prior art is mounted on an electrically conductive connector, and a plurality of structures composed of the TAB and the connector are stacked. Moreover, the connector mounting the TAB thereon is constructed such that the independent terminals of the stacked TABs may not be shorted.
摘要翻译：存在增加需要大容量存储器的器件的面积的趋势，其由半导体存储器占据。这种趋势阻碍了设备尺寸的减小。本发明旨在提供一种能够在最小化安装面积的同时具有高集成度，高密度和大容量的存储器。为了实现这种记忆，现有技术的TAB（磁带自动接合）被安装在导电连接器上，并且由TAB和连接器组成的多个结构被堆叠。此外，将TAB安装在其上的连接器构造成使得堆叠的TAB的独立端子可能不会短路。

5. 发明授权

US5334875A Stacked semiconductor memory device and semiconductor memory module containing the same 失效
标题翻译：堆叠的半导体存储器件和包含其的半导体存储器模块
公开(公告)号：US5334875A
公开(公告)日：1994-08-02
申请号：US1649
申请日：1993-03-02
申请人： Toshio Sugano , Kohji Nagaoka , Seiichiro Tsukui , Yoshiaki Wakashima , Michio Tanimoto , Masayuki Watanabe , Suguru Sakaguchi , Kunihiko Nishi , Aizo Kaneda , Kohji Serizawa , Michiharu Honda , Tohru Yoshida , Takeshi Komaru , Atsushi Nakamura
发明人： Toshio Sugano , Kohji Nagaoka , Seiichiro Tsukui , Yoshiaki Wakashima , Michio Tanimoto , Masayuki Watanabe , Suguru Sakaguchi , Kunihiko Nishi , Aizo Kaneda , Kohji Serizawa , Michiharu Honda , Tohru Yoshida , Takeshi Komaru , Atsushi Nakamura
IPC分类号： G11C5/00 , H01L23/498 , H01L25/065 , H05K1/14 , H05K1/18 , H05K3/34 , H05K3/36 , H01L23/16
CPC分类号： G11C5/02 , G11C5/00 , G11C5/06 , H01L23/49805 , H01L25/0657 , H01L2224/16 , H01L2225/0651 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06579 , H01L2225/06596 , H01L2924/07811 , H01L2924/09701 , H05K1/144 , H05K1/182 , H05K3/3421 , H05K3/363
摘要： There is a trend to increase that area of a device requiring a memory of large capacity, which is occupied by a semiconductor memory. This trend obstructs reduction of the size of the device. The present invention contemplates to provide a memory which can have a high integration, a high density and a large capacity while minimizing the mounting area. In order to achieve this memory, the TAB (Tape Automated Bonding) of the prior art is mounted on an electrically conductive connector, and a plurality of structures composed of the TAB and the connector are stacked. Moreover, the connector mounting the TAB thereon is constructed such that the independent terminals of the stacked TABs may not be shorted.
摘要翻译：存在增加需要大容量存储器的器件的面积的趋势，其由半导体存储器占据。这种趋势阻碍了设备尺寸的减小。本发明旨在提供一种能够在最小化安装面积的同时具有高集成度，高密度和大容量的存储器。为了实现这种记忆，现有技术的TAB（磁带自动接合）被安装在导电连接器上，并且由TAB和连接器组成的多个结构被堆叠。此外，将TAB安装在其上的连接器构造成使得堆叠的TAB的独立端子可能不会短路。

6. 发明授权

US5266834A Semiconductor device and an electronic device with the semiconductor devices mounted thereon 失效
标题翻译：半导体器件和其上安装有半导体器件的电子器件
公开(公告)号：US5266834A
公开(公告)日：1993-11-30
申请号：US915761
申请日：1992-07-21
申请人： Kunihiko Nishi , Michio Tanimoto , Toshihiro Yasuhara , Katsuhiro Tabata , Yasuhiro Yoshikawa , Isao Akima , Souichi Kunito , Toshio Nosaka , Hideaki Nakamura
发明人： Kunihiko Nishi , Michio Tanimoto , Toshihiro Yasuhara , Katsuhiro Tabata , Yasuhiro Yoshikawa , Isao Akima , Souichi Kunito , Toshio Nosaka , Hideaki Nakamura
IPC分类号： H01L23/495 , H01L25/10 , H01L23/02
CPC分类号： H01L23/4951 , H01L23/49568 , H01L25/105 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48471 , H01L2224/73215 , H01L2225/1029 , H01L2225/1041 , H01L2225/107 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/07802 , H01L2924/1305 , H01L2924/1815 , H01L2924/19041 , H01L2924/3025 , H01L2924/3511
摘要： A package is provided for achieving higher packing density and higher circuit integration of memories, in particular, a structure is provided having a plurality of thin, surface mount packages which are stacked up. Each of the laminated packages includes a semiconductor pellet, leads fixed to the front surface of the pellet, a radiating plate fixed to the rear surface of the same, and a resin mold member. To achieve a stabilized laminated structure, the mold member is shaped into a convex form on the front side of the pellet and into a concave form on the rear side of the same, so that the concave portion of one package can engage with the convex portion of another package.
摘要翻译：提供了用于实现更高的堆积密度和更高的存储器电路集成的封装，特别地，提供了具有堆叠的多个薄的表面贴装封装的结构。每个层叠包装包括半导体颗粒，固定在颗粒的前表面的引线，固定到其后表面的散热板和树脂模制构件。为了实现稳定的层压结构，模具构件在颗粒的前侧成形为凸形，并且在其后侧成为凹形，使得一个包装的凹部能够与凸部接合的另一个包。

7. 发明授权

US5028986A Semiconductor device and semiconductor module with a plurality of stacked semiconductor devices 失效
标题翻译：具有多个堆叠半导体器件的半导体器件和半导体模块
公开(公告)号：US5028986A
公开(公告)日：1991-07-02
申请号：US288955
申请日：1988-12-23
申请人： Toshio Sugano , Kohji Nagaoka , Seiichiro Tsukui , Yoshiaki Wakashima , Michio Tanimoto , Masayuki Watanabe , Suguru Sakaguchi , Kunihiko Nishi , Aizo Kaneda , Kohji Serizawa , Michiharu Honda , Tohru Yoshida , Takeshi Komaru , Atsushi Nakamura
发明人： Toshio Sugano , Kohji Nagaoka , Seiichiro Tsukui , Yoshiaki Wakashima , Michio Tanimoto , Masayuki Watanabe , Suguru Sakaguchi , Kunihiko Nishi , Aizo Kaneda , Kohji Serizawa , Michiharu Honda , Tohru Yoshida , Takeshi Komaru , Atsushi Nakamura
IPC分类号： G11C5/00 , H01L23/498 , H01L25/065 , H05K1/14 , H05K1/18 , H05K3/34 , H05K3/36
CPC分类号： G11C5/02 , G11C5/00 , G11C5/06 , H01L23/49805 , H01L25/0657 , H01L2224/16 , H01L2225/0651 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06579 , H01L2225/06596 , H01L2924/07811 , H01L2924/09701 , H05K1/144 , H05K1/182 , H05K3/3421 , H05K3/363
摘要： There is a trend to increase that area of a device requiring a memory of large capacity, which is occupied by a semiconductor memory. This trend obstructs reduction of the size of the device. The present invention contemplates to provide a memory which can have a high integration, a high density and a large capacity while minimizing the mounting area. In order to achieve this memory, the TAB (Tape Automated Bonding) of the prior art is mounted on an electrically conductive connector, and a plurality of structures composed of the TAB and the connector are stacked. Moreover, the connector mounting the TAB thereon is constructed such that the independent terminals of the stacked TABs may not be shorted.
摘要翻译：存在增加需要大容量存储器的器件的面积的趋势，其由半导体存储器占据。这种趋势阻碍了设备尺寸的减小。本发明旨在提供一种能够在最小化安装面积的同时具有高集成度，高密度和大容量的存储器。为了实现这种记忆，现有技术的TAB（磁带自动接合）被安装在导电连接器上，并且由TAB和连接器组成的多个结构被堆叠。此外，将TAB安装在其上的连接器构造成使得堆叠的TAB的独立端子可能不会短路。

8. 发明授权

US08962881B2 Oxidized organic compound manufacturing method 有权
标题翻译：氧化有机化合物的制造方法
公开(公告)号：US08962881B2
公开(公告)日：2015-02-24
申请号：US13203311
申请日：2009-03-09
申请人： Michio Tanimoto , Nobuyuki Hakozaki
发明人： Michio Tanimoto , Nobuyuki Hakozaki
IPC分类号： C07C45/35 , C07C47/22 , C07C51/235 , C07C51/25 , C07C57/05 , C07C57/055
CPC分类号： C07C51/235
摘要： The disclosed invention is a method for manufacturing an oxidized organic compound which includes a step of forming an oxidized organic compound, in use of a fixed-bed reactor having a reaction tube packed with an oxide catalyst, by supplying at least one type of organic compound as a reaction feedstock gas and using a molecular oxygen-containing gas to carry out a catalytic gas-phase oxidation reaction; and a step of stopping the catalytic gas-phase oxidation reaction. In the manufacturing method, when stopping the catalytic gas-phase oxidation reaction, the supply of the reaction feedstock gas is stopped, after which an inert gas is supplied to the reactor, then a molecular oxygen-containing gas is supplied, subsequent to which the supply of the molecular oxygen-containing gas to the reactor is stopped.
摘要翻译：所公开的发明是一种氧化有机化合物的制造方法，其包括形成氧化有机化合物的步骤，在使用具有填充有氧化物催化剂的反应管的固定床反应器的情况下，通过供给至少一种类型的有机化合物作为反应原料气体并使用含分子氧的气体进行催化气相氧化反应; 以及停止催化气相氧化反应的步骤。在制造方法中，停止催化气相氧化反应时，停止供给反应原料气体，之后向反应器供给惰性气体，然后供给含分子氧气体，接着，停止向反应器供应含分子氧的气体。

9. 发明申请

US20090043128A1 Catalyst and process for production of acrylic acid 有权
标题翻译：用于生产丙烯酸的催化剂和方法
公开(公告)号：US20090043128A1
公开(公告)日：2009-02-12
申请号：US12287082
申请日：2008-10-06
申请人： Hiromi Yunoki , Michio Tanimoto , Daisuke Nakamura
发明人： Hiromi Yunoki , Michio Tanimoto , Daisuke Nakamura
IPC分类号： C07C51/235 , B01J23/22 , B01J23/28
CPC分类号： C07C51/252 , B01J23/002 , B01J23/28 , B01J23/8885 , B01J37/0009 , B01J37/0223 , B01J37/0236 , B01J2523/00 , C07C57/04 , B01J2523/17 , B01J2523/55 , B01J2523/68 , B01J2523/69
摘要： An object of the present invention is to provide: a catalyst for production of acrylic acid which is a catalyst usable for production of acrylic acid and is excellent in the catalytic performances such as catalytic activity and in the physical properties such as physical strength of the catalyst itself; and a process for production of acrylic acid using this catalyst. As a means of achieving this object, a catalyst for production of acrylic acid according to the present invention is a catalyst obtained by drying a mixed liquid of starting materials including molybdenum and vanadium as essential components to give a dried material, molding the dried material with a liquid binder, and calcining the resultant molding, with the catalyst being characterized in that an ignition loss ratio of the dried material is from 5 to 40% by mass. A process for production of acrylic acid according to the present invention comprises the step of: subjecting acrolein to a catalytic gas phase oxidation in the presence of a molecular oxygen, with the process being characterized in that the above catalyst for production of acrylic acid according to the present invention is used.
摘要翻译：本发明的目的在于提供：丙烯酸的制造用催化剂，其为可用于生产丙烯酸的催化剂，催化性能如催化活性以及催化剂的物理性能如催化剂的物理性能优异本身; 以及使用该催化剂生产丙烯酸的方法。作为实现该目的的手段，本发明的丙烯酸的制造用催化剂是通过干燥含有钼和钒的起始材料的混合液作为必要成分而得到的催化剂，得到干燥后的材料，液体粘合剂，并煅烧所得到的模制品，催化剂的特征在于，干燥材料的灼烧损失率为5〜40质量％。根据本发明的制备丙烯酸的方法包括以下步骤：在分子氧存在下使丙烯醛进行催化气相氧化，其特征在于上述用于生产丙烯酸的催化剂根据使用本发明。

10. 发明授权

US07220698B2 Catalyst for catalytic gas phase oxidation of acrolein and process for producing acrylic acid by catalytic gas phase oxidation using said catalyst 失效
标题翻译：用于丙烯醛催化气相氧化的催化剂和使用所述催化剂通过催化气相氧化制备丙烯酸的方法
公开(公告)号：US07220698B2
公开(公告)日：2007-05-22
申请号：US11052897
申请日：2005-02-09
申请人： Hiromi Yunoki , Michio Tanimoto
发明人： Hiromi Yunoki , Michio Tanimoto
IPC分类号： B01J23/00 , C01C51/235
CPC分类号： C07C51/252 , B01J23/002 , B01J23/22 , B01J23/28 , B01J23/8876 , B01J23/8877 , B01J23/8885 , B01J37/0236 , B01J2523/00 , C07C57/04 , B01J2523/13 , B01J2523/17 , B01J2523/53 , B01J2523/55 , B01J2523/68 , B01J2523/69
摘要： There are provided a catalyst for catalytic gas phase oxidation of acrolein with molecular oxygen to produce acrylic acid, the catalyst including molybdenum and vanadium and further including at least one volatile catalyst poison ingredient in an amount of 10 to 100 ppb by mass as measured by ion chromatography; and a process for producing acrylic acid, including a step of carrying out catalytic gas phase oxidation of acrolein with molecular oxygen using the catalyst. The catalyst of the present invention can lower a hot spot temperature and suppress reduction in a reaction efficacy accompanied with thermal degradation, so that the acrolein conversion can stably be kept higher over a long term.
摘要翻译：提供了一种用分子氧催化气相氧化丙烯醛产生丙烯酸的催化剂，该催化剂包括钼和钒，还包括至少一种挥发性催化剂毒成分，其用量为离子浓度为10-100ppb 色谱以及丙烯酸的制造方法，包括使用催化剂进行丙烯醛与分子氧的催化气相氧化的工序。本发明的催化剂可以降低热点温度并抑制伴随热降解的反应效率的降低，使得丙烯醛转化率可以长期稳定地保持较高。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式